NXP Semiconductors NT2H1311G0DUFZ

Overview

NT2H1311G0DUFZ from NXP Semiconductors is an NFC Forum Type 2 Tag compliant contactless IC designed for mass-market smart labeling and authentication applications. It features 144 bytes of user memory, 50 pF input capacitance, 13.56 MHz operating frequency, and supports FAST_READ command for single-frame NDEF message retrieval - enabling use in electronic shelf labels, mobile companion tags, and product authentication systems.

For engineers reviewing the NT2H1311G0DUFZ datasheet, NT2H1311G0DUFZ pinout, NT2H1311G0DUFZ application, or NT2H1311G0DUFZ equivalent, key selection considerations include its ultrathin 75 µm wafer form factor, field-programmable page locking, ECC-based originality signature, and ISO/IEC 14443 Type A compliance for interoperability with NFC-enabled smartphones and readers.

Technical Context

The NT2H1311G0DUFZ implements a fully integrated RF interface per ISO/IEC 14443 Type A, including rectifier, clock regenerator, and Power-On Reset circuitry - requiring no external components beyond an antenna coil. Its digital control unit handles anticollision, command interpretation (READ, FAST_READ, WRITE, PWD_AUTH), and EEPROM interface management for 45-page (4-byte/page) memory organization.

Memory architecture includes manufacturer-programmed 7-byte UID with BCC0/BCC1 checksums, static lock bytes (page 02h) for per-page read-only protection of pages 03h–0Fh, and dynamic lock bytes (page 28h) for double-page locking of user memory starting at page 10h. Security is enforced via 32-bit password protection, one-time programmable capability container, and ECC-based originality signature verification.

Key Specifications

Pinout & Package

NT2H1311G0DUFZ is supplied as a bare die on film frame carrier (FFC Bump), 75 µm thick, with gold bumps and electronic fail die marking per SECS-II format. It has two terminals for direct connection to an external antenna coil.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NFC tag IC applications.

Compared with NT2H1311G0DA8, NT2H1311G0DUFZ offers superior mechanical flexibility for ultrathin inlays, while NT3H1201W0FHK introduces active power requirements and interface complexity unsuitable for passive-only deployments - making NT2H1311G0DUFZ the optimal choice for cost-sensitive, battery-free NFC labeling.

Availability

NT2H1311G0DUFZ is available at Aetrix Electronics and suitable for electronic shelf labels, product authentication systems, mobile companion tags, and NFC-based pairing applications requiring stable component supply across high-volume consumer electronics manufacturing.

Supply support for NT2H1311G0DUFZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The NTAG21x family, including NT2H1311G0DUFZ, was engineered specifically for high-volume NFC tag applications - emphasizing small footprint, robust RF performance, and built-in security primitives for mass-market smart labeling and authentication.

FAQ

What is the exact user memory capacity of NT2H1311G0DUFZ?

The NT2H1311G0DUFZ provides 144 bytes of freely available user Read/Write memory, organized across 36 pages of 4 bytes each. This capacity is dedicated to NDEF message storage and is distinct from reserved areas for UID, capability container, lock bits, and configuration data - all confirmed in the official NXP datasheet Rev. 3.2.

Does NT2H1311G0DUFZ require external components to operate?

No, NT2H1311G0DUFZ operates as a fully self-contained NFC tag IC - it needs only an external antenna coil connected between LA and LB terminals. No external capacitors, resistors, or voltage regulators are required, as the internal RF interface includes rectifier, voltage regulator, and clock regeneration circuitry per ISO/IEC 14443 Type A.

How is security implemented in NT2H1311G0DUFZ?

NT2H1311G0DUFZ implements layered security: manufacturer-programmed 7-byte UID, ECC-based originality signature for anti-cloning, one-time programmable capability container, field-programmable read-only locking per page (pages 03h–0Fh) or double-page block (pages 10h+), and optional 32-bit password protection with configurable failure attempt limits - all verified in NXP's NTAG213/215/216 product data sheet.

What package form does NT2H1311G0DUFZ ship in?

NT2H1311G0DUFZ is delivered as a bare die on film frame carrier (FFC Bump), with 75 µm thickness, gold bumps, and electronic fail die marking per SECS-II format. It is not housed in a molded package - this wafer-level form enables direct bonding to flexible substrates or inlay antennas in high-volume smart label production.

Is NT2H1311G0DUFZ compatible with NFC smartphones?

Yes, NT2H1311G0DUFZ is fully compliant with NFC Forum Type 2 Tag specification and ISO/IEC 14443 Type A, ensuring interoperability with all NFC-enabled Android and iOS devices. Its 13.56 MHz operation, 106 kbit/s data rate, and standardized NDEF messaging structure guarantee reliable read/write functionality across certified NFC hosts.