NXP Semiconductors NT2H1511G0DUDZ

Overview

NT2H1511G0DUDZ from NXP Semiconductors is an NFC Forum Type 2 Tag compliant contactless IC designed for secure, low-power smart label applications. It provides 504 bytes of user memory, 13.56 MHz operating frequency, 106 kbit/s data transfer rate, and 50 pF input capacitance optimized for compact antenna integration in retail smart labels and mobile companion tags.

For engineers reviewing the NT2H1511G0DUDZ datasheet, NT2H1511G0DUDZ pinout, NT2H1511G0DUDZ application, or NT2H1511G0DUDZ equivalent, key selection criteria include NFC Forum T2T compliance, field-programmable page locking, ECC-based originality signature, 7-byte UID, and password-protected memory access for authentication-critical deployments.

Technical Context

The NT2H1511G0DUDZ implements a complete ISO/IEC 14443 Type A RF interface with integrated rectifier, clock regenerator, and voltage regulator - requiring no external components beyond an antenna coil. Its Digital Control Unit supports anticollision, FAST_READ command execution, and state-driven command interpretation (IDLE → READY1 → READY2 → ACTIVE → HALT).

Memory architecture comprises 135 pages × 4 bytes = 540 total EEPROM bytes, with 26 bytes reserved for manufacturer/config data, 4-byte capability container, and 504 bytes user-read/write area. Locking is implemented via static lock bits (pages 03h–0Fh) and dynamic lock bytes (page 82h), enabling granular, irreversible read-only protection per double-page or 16-page blocks.

Key Specifications

Pinout & Package

NT2H1511G0DUDZ is supplied as a bare die in FFC Bump format: 8-inch wafer, 120 µm thickness, Au bumps, film frame carrier. It has two terminals for direct antenna connection only - no conventional package or power pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NFC tag IC applications.

Compared with NT2H1311G0DUD and NT2H1611G0DUD, NT2H1511G0DUDZ delivers optimal balance of memory headroom (504 B), die-thickness compatibility (120 µm), and cost - making it the default choice for mid-complexity smart labels where scalability beyond NTAG213 is needed but NTAG216's overhead is unjustified.

Availability

NT2H1511G0DUDZ is available at Aetrix Electronics and suitable for electronic shelf labels, smart advertisement deployments, and product authentication systems requiring stable component supply across high-volume consumer electronics manufacturing.

Supply support for NT2H1511G0DUDZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT markets, with core expertise in RFID, NFC, and secure element technologies.

The NTAG21x family - including NT2H1511G0DUDZ - was engineered specifically for mass-market NFC tag applications demanding robustness, small-footprint antenna integration, and certified interoperability with NFC Forum–compliant devices.

FAQ

What is the exact user memory capacity of NT2H1511G0DUDZ?

NT2H1511G0DUDZ provides 504 bytes of freely available user Read/Write memory, organized across 126 pages of 4 bytes each. This capacity is confirmed in NXP's official NTAG213/215/216 datasheet (Rev. 3.2, Section 2.1 and Table 2), and corresponds to the NTAG215 variant with 540 total EEPROM bytes (26 bytes reserved for system use). The memory is pre-formatted for NDEF messaging and supports field-programmable locking.

Does NT2H1511G0DUDZ require external components to operate?

No, NT2H1511G0DUDZ requires only an external antenna coil connected across LA and LB terminals. Its integrated RF interface includes rectifier, voltage regulator, clock regenerator, and POR circuitry - eliminating need for discrete capacitors, diodes, or regulators. Antenna design must account for the fixed 50 pF input capacitance to achieve resonance at 13.56 MHz, as specified in NXP Application Note AN11759.

How is memory protection implemented on NT2H1511G0DUDZ?

NT2H1511G0DUDZ implements dual-layer memory protection: static lock bits (pages 03h–0Fh) allow per-page irreversible locking via WRITE to page 02h, while dynamic lock bytes (at page 82h) protect user memory starting at page 10h in 16-page blocks. Both mechanisms are tearing-proof and support password-protected access to designated zones - verified in Sections 8.5.2 and 8.5.3 of the official datasheet.

Is NT2H1511G0DUDZ NFC Forum Type 2 Tag certified?

Yes, NT2H1511G0DUDZ is fully compliant with NFC Forum Type 2 Tag specification (Ref. 2) and ISO/IEC 14443 Type A (Ref. 1), as explicitly stated in the NXP NTAG213/215/216 product data sheet (Section 1.4 and cover page). It supports NDEF message formatting, capability container initialization, and all mandatory command sets including READ, WRITE, FAST_READ, and PWD_AUTH.

What package format is NT2H1511G0DUDZ delivered in?

NT2H1511G0DUDZ is delivered as a bare die in FFC Bump format: 8-inch wafer, 120 µm thickness, gold bumps, on film frame carrier, with electronic fail die marking per SECS-II format. This matches ordering code "FFC Bump" and "120 µm thickness" in Table 2 of the NXP datasheet - distinct from MOA8/SOT500-4 packaged variants like NT2H1511G0DA8.