NXP Semiconductors NT2L1011G0DUDV

Overview

NT2L1011G0DUDV from NXP Semiconductors is an NFC Forum Type 2 Tag compliant contactless IC designed for mass-market smart labeling and authentication applications. It operates at 13.56 MHz, provides 48 bytes of user memory, supports 106 kbit/s data transfer, and features a manufacturer-programmed 7-byte UID - enabling secure, low-power integration into retail smart posters, product authentication tags, and NFC shelf labels.

For engineers reviewing the NT2L1011G0DUDV datasheet, NT2L1011G0DUDV pinout, NT2L1011G0DUDV application, or NT2L1011G0DUDV equivalent, key selection considerations include its FFC bump wafer form factor (120 µm thickness), field-programmable page locking, ECC-based originality signature, and compatibility with ISO/IEC 14443 Type A and NFC Forum Tag 2 specifications.

Technical Context

The NT2L1011G0DUDV implements a fully integrated RF interface with rectifier, clock regenerator, and voltage regulator - requiring no external components beyond an antenna coil. Its Digital Control Unit handles anticollision, command interpretation (WUPA, REQA, READ, FAST_READ, PWD_AUTH), and state management across IDLE, READY1, READY2, ACTIVE, AUTHENTICATED, and HALT states.

Memory organization comprises 20 pages × 4 bytes (80-byte EEPROM), with 48 bytes allocated as user Read/Write area (pages 04h–0Fh), 4-byte capability container (page 03h), and static lock bytes (page 02h) enabling per-page or block-level write protection - all supporting tear-resistant programming and 10-year data retention.

Key Specifications

Pinout & Package

NT2L1011G0DUDV is supplied as a bare die in FFC Bump format on an 8-inch film frame carrier, with 120 µm thickness and gold bumps. It has two terminals for direct antenna connection only - no conventional package or power supply pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NFC tag IC applications.

Compared with NT2L1011G0DUDV, NT2L1011G0DUF offers thinner profile for premium print integration, while NT2L1211G0DUD delivers double user memory for richer NDEF payloads - both share identical command set, security features, and RF performance, making them functionally aligned alternatives rather than drop-in replacements.

Availability

NT2L1011G0DUDV is available at Aetrix Electronics and suitable for smart advertisement, product authentication, and NFC shelf label applications requiring stable component supply, wafer-level traceability, and long-term lifecycle support.

Supply support for NT2L1011G0DUDV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and consumer markets - with deep expertise in RFID, NFC, and contactless interface technologies.

The NTAG21x family, including NT2L1011G0DUDV, was engineered specifically for high-volume, cost-sensitive NFC tag inlays - balancing robust security (ECC signature, password protection), manufacturing flexibility (ultrathin die options), and NFC Forum certification compliance.

FAQ

What is the primary function of NT2L1011G0DUDV in an NFC system?

NT2L1011G0DUDV functions as a passive NFC Forum Type 2 Tag IC that harvests energy from an RF field to power its internal circuitry and exchange data at 13.56 MHz. It stores and serves NDEF-formatted data (e.g., URLs, text) via standardized commands like READ and FAST_READ, and supports security features including UID-based identification and ECC originality verification - all without requiring an external power source.

Does NT2L1011G0DUDV require external components for operation?

No, NT2L1011G0DUDV requires only an external antenna coil connected between LA and LB terminals. Its integrated RF interface includes a rectifier, voltage regulator, clock regenerator, and POR circuit - eliminating the need for discrete capacitors, resistors, or power management ICs. This simplifies inlay design and reduces bill-of-materials cost for NFC tag manufacturers.

How does the page locking mechanism work on NT2L1011G0DUDV?

NT2L1011G0DUDV implements static lock bits in page 02h to enable irreversible, field-programmable write protection. Bits L0–L15 individually lock pages 03h–0Fh; block-locking bits (BL0–BL2) freeze locking configuration for memory ranges. Once a lock bit is set to '1' via WRITE or COMPATIBILITY_WRITE, it cannot be reset - ensuring permanent read-only status for configuration or user data sections.

What memory organization does NT2L1011G0DUDV use?

NT2L1011G0DUDV uses an 80-byte EEPROM organized into 20 pages of 4 bytes each. Of these, 48 bytes (pages 04h–0Fh) are user-programmable Read/Write memory; 4 bytes (page 03h) serve as the capability container; and 26 bytes (pages 00h–02h, 10h–13h) hold UID, lock bytes, configuration, and manufacturer data - all compliant with NFC Forum Type 2 Tag and ISO/IEC 14443 Type A standards.

Can NT2L1011G0DUDV be used for secure authentication applications?

Yes, NT2L1011G0DUDV supports multiple security layers for authentication: a factory-programmed 7-byte UID, ECC-based originality signature verification, 32-bit password protection with optional attempt limiting, and field-programmable page locking. These features collectively enable tamper-resistant device identity binding and controlled memory access - validated in applications like pharmaceutical anti-counterfeiting and luxury goods verification.