NXP Semiconductors NT2L1211G0DUDV

Overview

NT2L1211G0DUDV from NXP Semiconductors is an NFC Forum Type 2 Tag compliant contactless IC with 128 bytes of user memory, 13.56 MHz operating frequency, 106 kbit/s data transfer rate, and ECC-based originality signature - designed for smart advertisement, product authentication, and NFC shelf labels.

For engineers reviewing the NT2L1211G0DUDV datasheet, NT2L1211G0DUDV pinout, NT2L1211G0DUDV application, or NT2L1211G0DUDV equivalent, key selection considerations include UID ASCII mirroring capability, field-programmable per-page locking (first 16 pages) and per-double-page locking (pages ≥16), 32-bit password protection, and 75 µm wafer thickness for ultrathin inlay integration.

Technical Context

The NT2L1211G0DUDV implements a fully ISO/IEC 14443 Type A–compliant RF interface with integrated rectifier, clock regenerator, POR, and voltage regulator - requiring no external components beyond an antenna coil. Its Digital Control Unit executes anticollision, command interpretation, and EEPROM interface control.

Memory organization comprises 41 pages × 4 bytes = 164 bytes total EEPROM, with 128 bytes user memory (pages 04h–23h), 4-byte capability container (page 03h), static lock bytes (page 02h), and dynamic lock bytes (page 24h) - supporting irreversible field-programmable read-only locking and anti-tearing for CC and lock bits.

Key Specifications

Pinout & Package

NT2L1211G0DUDV is supplied as a bare die in FFC Bump package on 8-inch wafer, with 75 µm thickness optimized for ultrathin inlays. It features two antenna terminals only - no power or signal pins - and requires direct bonding to an external coil.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NFC tag IC applications.

Compared with NT2L1211G0DUF, NT2L1211G0DUDV offers identical functionality with verified 75 µm thickness for thinner inlays; compared with NT3H2111W0FHK, it provides lower-cost, purely contactless operation without I²C overhead or sensor integration - making it optimal for high-volume retail and publishing applications.

Availability

NT2L1211G0DUDV is available at Aetrix Electronics and suitable for smart advertisement, product authentication, and NFC shelf labels requiring stable component supply across global manufacturing programs.

Supply support for NT2L1211G0DUDV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and consumer markets, with core expertise in RFID, NFC, and secure element technologies.

The NTAG21x family - including NT2L1211G0DUDV - was engineered specifically for high-volume, cost-sensitive NFC tag applications in retail, publishing, and authentication, balancing security, standards compliance, and manufacturability.

FAQ

What is the exact memory configuration of NT2L1211G0DUDV?

NT2L1211G0DUDV contains 164 bytes of EEPROM organized in 41 pages of 4 bytes each. Of these, 128 bytes (pages 04h–23h) are user-programmable read/write memory. The remaining space includes 4-byte capability container (page 03h), static lock bytes (page 02h), dynamic lock bytes (page 24h), manufacturer data, and configuration pages (pages 25h–28h). This matches the NTAG212 variant specification.

Does NT2L1211G0DUDV support password protection and how is it implemented?

Yes, NT2L1211G0DUDV supports 32-bit password protection using PWD_AUTH command. Password (PWD) and acknowledge (PACK) values are stored in configuration pages 27h and 28h. Access protection is controlled by AUTH0 (page 25h) and PROT bit (page 26h), enabling selective read/write restriction starting from any defined page address - with optional negative attempt limiting via AUTHLIM bits.

How does the UID ASCII mirror function work in NT2L1211G0DUDV?

The UID ASCII mirror in NT2L1211G0DUDV maps the 7-byte UID into a 14-character ASCII string stored virtually in user memory. Enabled by setting MIRROR_PAGE > 03h (e.g., 0Bh) and MIRROR_BYTE (e.g., 00b), it responds to READ/FAST_READ commands with ASCII-encoded UID instead of physical memory contents - allowing offline serialization without cloud dependency.

What is the significance of the 'DUDV' suffix in NT2L1211G0DUDV?

The 'DUDV' suffix in NT2L1211G0DUDV indicates a specific wafer-level delivery variant: 'DU' denotes 120 µm thickness and 'DV' specifies electronic fail die marking per SECS-II format on film frame carrier. However, per Table 2 in the datasheet, NT2L1211G0DUD corresponds to 120 µm, while NT2L1211G0DUF is 75 µm - confirming NT2L1211G0DUDV aligns with the 75 µm variant despite 'DU' prefix, validated by its documented 75 µm thickness and 128-byte memory.

Is NT2L1211G0DUDV NFC Forum Type 2 Tag certified and what does that ensure?

Yes, NT2L1211G0DUDV is fully compliant with NFC Forum Type 2 Tag technical specification and ISO/IEC 14443 Type A. This certification ensures interoperability with all NFC-enabled smartphones and readers, standardized NDEF message formatting, predictable anticollision behavior, and guaranteed support for mandatory commands including REQA, WUPA, READ, WRITE, FAST_READ, and PWD_AUTH.