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NXP Semiconductors NT3H1101W0FTTJ

Part No.:
NT3H1101W0FTTJ
Manufacturer:
NXP Semiconductors
Category:
RFID, RF Access, Monitoring ICs
Package:
-
Datasheet:
AetrixNT3H1101W0FTTJ.pdf
Description:
IC RFID TRANSP 13.56MHZ 8TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:14,517

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Product details

Overview

NT3H1101W0FTTJ from NXP Semiconductors is an NFC Forum Type 2 Tag IC with integrated I²C interface, 888-byte user EEPROM, 64-byte SRAM buffer, energy harvesting output (VOUT), and configurable field detection (FD) pin. It operates at 13.56 MHz, supports 106 kbit/s RF data transfer, and enables zero-power configuration in smart home appliances and healthcare devices.

For engineers reviewing the NT3H1101W0FTTJ datasheet, NT3H1101W0FTTJ pinout, NT3H1101W0FTTJ application, or NT3H1101W0FTTJ equivalent, this page delivers verified technical context, real-world interface arbitration behavior, memory mapping constraints, and validated alternative options for NFC-I²C bridge designs requiring field-triggered wake-up and external microcontroller power supply.

Technical Context

The NT3H1101W0FTTJ implements dual-interface arbitration using a first-come, first-serve policy with status flag bits indicating EEPROM read/write bus occupancy by either RF or I²C. Its digital control unit enforces ISO/IEC 14443-3A anticollision and processes FAST_READ commands with variable frame lengths up to 595 bits for full SRAM access.

Energy harvesting is implemented via an on-chip rectifier and voltage regulator delivering up to 3.3 V at 5 mA to external loads; the FD pin provides open-drain wake-up signaling triggered by RF field presence, first communication start, or tag selection only - all configurable via register writes over I²C or RF.

Key Specifications

Parameter Value and Actual Design Meaning
RF Standard NFC Forum Type 2 Tag compliant per ISO/IEC 14443-3A; enables interoperability with all standard NFC readers and smartphones.
Memory Capacity 888 bytes user EEPROM (222 pages × 4 bytes); sufficient for full NDEF messages in consumer electronics configuration use cases.
SRAM Buffer 64 bytes volatile memory mapped at I²C addresses F8h–FBh; enables unlimited write cycles and fast pass-through data exchange between RF and I²C interfaces.
I²C Speed Supports Standard (100 kHz) and Fast (400 kHz) modes; allows efficient host-side firmware updates without EEPROM endurance limitations.
Energy Harvesting VOUT supplies up to 3.3 V / 5 mA; powers low-power MCUs or sensors directly, eliminating need for separate bias rails in battery-free designs.
Field Detection FD pin provides open-drain wake-up signal on RF field presence, first communication, or selection-only events; reduces system standby current.
Data Integrity 16-bit CRC per block, odd parity per byte, bit counting, and bit coding ensure robust operation in noisy RF environments.

Pinout & Package

NT3H1101W0FTTJ uses the TSSOP8 package (SOT505-1): plastic thin shrink small outline, 8 leads, body width 3 mm, 1k-byte memory variant, 50 pF input capacitance.

Pin/Terminal Circuit Role Design Meaning
1 (SDA) I²C serial data line Open-drain bidirectional interface for EEPROM/SRAM read/write; requires external pull-up resistor.
2 (VCC) External power supply input Enables I²C operation and SRAM access; must be present for VOUT energy harvesting and FD pin functionality.
3 (VOUT) Energy harvesting output Delivers regulated DC voltage (up to 3.3 V / 5 mA) to external microcontrollers or sensors when powered by RF field.
4 (LB) Antenna connection (low side) Completes resonant LC tank with LA; impedance-matched to 50 Ω for optimal 13.56 MHz coupling.
5 (FD) Configurable field detection output Open-drain trigger pin asserting low on RF field presence, first communication, or selection - configurable via register.
6 (SCL) I²C serial clock input Master-generated clock synchronizing I²C transactions; supports 100 kHz and 400 kHz timing budgets.
7 (VSS) Ground reference Common return path for RF rectifier, I²C logic, and energy harvesting circuitry; must be low-impedance.
8 (LA) Antenna connection (high side) Primary RF input node; connects to antenna coil; forms resonant circuit with LB and internal capacitance.

Key Features

Feature Design Value
Pass-through mode Maps SRAM into EEPROM address space for direct RF access to volatile data - eliminates EEPROM write-cycle delays during dynamic NDEF updates.
FAST READ command Reads up to 64 bytes from SRAM in one RF frame (595-bit response); cuts NDEF payload read time vs. standard READ by >80%.
Dual-interface arbitration Status flags (BUSY_RF/BUSY_I2C) prevent simultaneous EEPROM access; ensures deterministic behavior in mixed-mode systems.
Dynamic page locking Three dynamic lock bytes protect 830 bytes of extended memory (pages 10h–E1h) in 16-page granularity; irreversible via RF, resettable via I²C.
Manufacturer UID 7-byte factory-programmed serial number (including NXP's 04h manufacturer ID) - enables secure device identity and anti-cloning in OEM deployments.

Applications

Home Automation Smart Meters

Use Scenario: NFC-enabled thermostat reads configuration parameters (setpoints, schedules) from NT3H1101W0FTTJ embedded in HVAC control board during commissioning.

IC Role / Device Role / Timing Role: Dual-interface bridge storing NDEF-configured parameters; FD pin wakes MCU only when field is active, minimizing power draw.

Use Value: Eliminates manual dip-switch or Bluetooth pairing; enables field technicians to reconfigure devices in <5 seconds using any NFC smartphone.

Use Scenario: Utility meter uses NT3H1101W0FTTJ to store tariff tables, firmware version, and calibration data accessible via handheld NFC reader during maintenance.

IC Role / Device Role / Timing Role: Secure, field-updatable memory with static/dynamic lock bits preventing unauthorized parameter modification.

Use Value: Reduces service truck dispatches by enabling remote firmware patching and tariff updates without physical access to meter internals.

Healthcare Sensors Consumer Printers

Use Scenario: Wearable glucose monitor stores patient ID, calibration history, and last reading on NT3H1101W0FTTJ; synced to clinician's tablet via NFC tap.

IC Role / Device Role / Timing Role: Zero-power NDEF container with UID-based authentication; SRAM holds latest sensor reading for instant RF readout.

Use Value: Enables HIPAA-compliant, offline data exchange without Bluetooth pairing latency or cloud dependency.

Use Scenario: Inkjet printer embeds NT3H1101W0FTTJ to store ink cartridge model, remaining page count, and counterfeit detection keys.

IC Role / Device Role / Timing Role: Read-only locked memory section (pages 03h–0Fh) prevents tampering with cartridge authentication data.

Use Value: Blocks third-party cartridges by validating cryptographic signatures stored in capability container and UID-locked registers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NFC-I²C bridge applications.

Alternative Part Technical Difference Application Difference Selection Advice
NT3H1201W0FTT 2k-byte EEPROM (1904 bytes), larger dynamic lock coverage (1846 bytes), same TSSOP8 package and pinout. Required when NDEF payloads exceed 888 bytes or extended memory locking granularity (32-page blocks) is needed. Select NT3H1201W0FTT if future firmware expansion or multi-language UI strings demand >1 kB of secure NDEF storage.
ST25DV02K 2-kbit EEPROM, I²C-compatible, supports RF/I²C dual interface but lacks energy harvesting (no VOUT) and field detection (no FD pin). Suitable for passive NFC tag + MCU coexistence where external power is always available and wake-on-field is not required. Choose ST25DV02K only when energy harvesting and FD-triggered wake-up are unnecessary - avoids over-specifying for simple data logging.

Compared with NT3H1101W0FTTJ, NT3H1201W0FTT offers double EEPROM capacity and finer-grained dynamic locking for scalable NDEF deployment, while ST25DV02K reduces BOM cost by omitting VOUT/FD circuitry - making it viable only in externally powered, non-wake-up-sensitive systems.

Availability

NT3H1101W0FTTJ is available at Aetrix Electronics and suitable for home automation, smart metering, and healthcare sensor applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for NT3H1101W0FTTJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT markets, with core expertise in NFC, RFID, and secure element technologies.

The NTAG I²C product line - including NT3H1101W0FTTJ - was designed specifically to bridge contactless NFC interaction with embedded microcontrollers via I²C, enabling zero-power configuration and energy-harvesting-powered peripherals in resource-constrained edge devices.

FAQ

What is the memory configuration of NT3H1101W0FTTJ?

NT3H1101W0FTTJ contains 888 bytes of user-accessible EEPROM organized in 222 pages of 4 bytes each, plus 64 bytes of SRAM mapped at I²C addresses F8h–FBh. The EEPROM retains data for 20 years with 500,000 write cycles; SRAM has unlimited endurance but is volatile and only accessible when VCC is applied.

Does NT3H1101W0FTTJ support energy harvesting, and what is its output capability?

Yes, NT3H1101W0FTTJ integrates energy harvesting circuitry delivering regulated DC voltage on the VOUT pin. It supplies up to 3.3 V at 5 mA when powered by an NFC field - sufficient to operate low-power microcontrollers like ARM Cortex-M0+ or sensors such as temperature/humidity ICs without external bias rails.

How does the field detection (FD) pin function on NT3H1101W0FTTJ?

The FD pin on NT3H1101W0FTTJ is an open-drain output that asserts low upon configurable RF events: field presence, first communication start, or tag selection only. Its behavior is set via configuration registers accessible over I²C or RF, and it requires an external pull-up resistor to function as a wake-up signal for host MCUs.

Can NT3H1101W0FTTJ be used as a standard I²C EEPROM without NFC involvement?

Yes, NT3H1101W0FTTJ operates as a fully functional I²C slave device supporting Standard (100 kHz) and Fast (400 kHz) modes. When VCC is applied and no RF field is present, it behaves identically to a standard 1k-byte I²C EEPROM - allowing firmware updates, parameter storage, and NDEF message assembly independent of NFC activity.

What security features does NT3H1101W0FTTJ provide for protecting stored data?

NT3H1101W0FTTJ provides static lock bits (pages 03h–0Fh), dynamic lock bytes (pages E2h sector 0), UID-based authentication, and a programmable capability container. Lock bits are irreversible via RF but resettable via I²C; UID is factory-programmed and read-only; all locks enforce read-only access to protected memory regions.

NT3H1101W0FTTJ Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
RFID Transponder
Frequency:
13.56MHz
Standards:
ISO 14443
Interface:
I2C
Voltage - Supply:
1.7V ~ 3.6V
Operating Temperature:
-40°C ~ 95°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
-

NT3H1101W0FTTJ FAQ

1.How can I place an order for NT3H1101W0FTTJ through Aetrix?

Please submit a Request for Quotation (RFQ) for NT3H1101W0FTTJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NT3H1101W0FTTJ reliable?

The price and inventory of NT3H1101W0FTTJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NT3H1101W0FTTJ is usually 5 days.

3.What payment methods are accepted for NT3H1101W0FTTJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NT3H1101W0FTTJ transactions.

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4.How is shipping managed for NT3H1101W0FTTJ?

NT3H1101W0FTTJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NT3H1101W0FTTJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NT3H1101W0FTTJ?

For technical support, including NT3H1101W0FTTJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NT3H1101W0FTTJ requirements.

6.How does Aetrix verify that NT3H1101W0FTTJ is sourced from the original manufacturer or authorized distributors?

All NT3H1101W0FTTJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NT3H1101W0FTTJ meets industry standards.

7.What is the process for return or replacement of NT3H1101W0FTTJ?

All NT3H1101W0FTTJ units undergo pre-shipment inspection (PSI). If there is an issue with NT3H1101W0FTTJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NT3H1101W0FTTJ part is unused and in its original packaging.

Return procedure for NT3H1101W0FTTJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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