NXP Semiconductors NT3H2111W0FT1X

Overview

NT3H2111W0FT1X from NXP Semiconductors is a second-generation connected NFC tag IC integrating ISO/IEC 14443A-compliant passive NFC interface and I2C slave interface, featuring 1 kbyte EEPROM, 64-byte SRAM buffer, password-protected memory access, ECC-based originality signature, and energy harvesting output (VOUT) delivering up to 15 mW - deployed in smart printers, electronic shelf labels, and home-automation nodes for tap-and-go configuration and secure device pairing.

For engineers reviewing the NT3H2111W0FT1X datasheet, NT3H2111W0FT1X pinout, NT3H2111W0FT1X application, or NT3H2111W0FT1X equivalent, this page delivers verified technical context on dual-interface arbitration, field-detection synchronization, pass-through mode timing, energy harvesting load capability, and SO8-package I2C address mapping (AAh write / ABh read).

Technical Context

The NT3H2111W0FT1X implements a dual-interface arbiter that enforces exclusive memory access between NFC and I2C interfaces, with configurable FD pin signaling NFC field presence to trigger host wake-up or synchronize pass-through data transfer. Its digital control unit executes ISO/IEC 14443-3A anticollision, FAST_READ/FAST_WRITE commands, and GET_VERSION identification.

Memory architecture includes 1 kbyte EEPROM (500,000 write cycles, 20-year retention) and 64-byte SRAM (unlimited endurance, volatile, accessible only when VCC is powered), both mapped via NFC (4-byte pages) and I2C (16-byte blocks); ECC-based originality signature and 32-bit password protection apply independently per interface.

Key Specifications

Pinout & Package

NT3H2111W0FT1X uses SO8 package (SOT96-1): plastic small outline, 8 leads, body width 3.9 mm, 1 kbyte memory variant, 50 pF input capacitance, supplied in 1000-piece 7″ reels.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar connected NFC tag applications.

Compared with NT3H2211W0FT1X, NT3H2111W0FT1X reduces EEPROM capacity but maintains identical security, energy harvesting, and timing performance-ideal for cost-sensitive, memory-efficient deployments. Against NT3H2111W0FHKH, it trades miniaturization for easier assembly and thermal dissipation in SO8 form factor.

Availability

NT3H2111W0FT1X is available at Aetrix Electronics and suitable for smart printers, electronic shelf labels, and home-automation nodes requiring stable component supply, long-lifecycle support, and guaranteed traceability across production batches.

Supply support for NT3H2111W0FT1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT markets, with core expertise in NFC, RFID, and secure element technologies.

The NTAG I2C plus product line was designed specifically to enable low-cost, secure, dual-interface NFC integration in resource-constrained consumer and industrial edge devices - emphasizing zero-power operation, energy harvesting, and seamless smartphone interoperability.

FAQ

What is the memory configuration of NT3H2111W0FT1X?

NT3H2111W0FT1X integrates 1 kbyte of EEPROM (500,000 write cycles, 20-year data retention) and 64 bytes of volatile SRAM (unlimited write endurance). The SRAM is only accessible when VCC is applied, while EEPROM remains functional in passive NFC-only mode. Memory is organized into 4-byte NFC pages and 16-byte I2C blocks, with independent password protection and lock bit control per interface.

How does the energy harvesting function work on NT3H2111W0FT1X?

The NT3H2111W0FT1X harvests energy from the NFC reader's RF field via its LA/LB antenna terminals and delivers up to 15 mW on the VOUT pin. This regulated output can power external circuitry such as a microcontroller's wake-up circuit or sensor biasing network. VOUT activates only during NFC field presence and requires no external components - enabling true zero-power system initialization.

Is NT3H2111W0FT1X pin-compatible with other NTAG I2C plus variants?

Yes - NT3H2111W0FT1X shares identical pinout, electrical characteristics, and register mapping with all SO8-packaged NTAG I2C plus variants (e.g., NT3H2211W0FT1X) and maintains full backward compatibility with first-generation NTAG I2C devices. The SO8 footprint (SOT96-1) and terminal functions (LA, LB, SCL, SDA, FD, VSS, VCC, VOUT) are consistent across this package family.

What security features does NT3H2111W0FT1X provide?

NT3H2111W0FT1X provides layered security: factory-programmed 7-byte UID, 32-bit password protection configurable per interface (NFC/I2C), ECC-based originality signature for anti-cloning, NFC silence mode to disable contactless interface, and dynamic/static lock bits per memory page. Password attempts are limited to prevent brute-force attacks, and protected memory regions enforce strict access conditions in ACTIVE or AUTHENTICATED states.

Can NT3H2111W0FT1X operate without external power (VCC)?

Yes - NT3H2111W0FT1X operates fully in passive NFC mode without VCC: NFC interface reads/writes EEPROM, executes GET_VERSION, and delivers energy via VOUT. However, SRAM access, I2C communication, and FD pin assertion require VCC. In pure NFC mode, the device draws power solely from the reader's RF field and retains EEPROM data indefinitely.