onsemi NUP2114UPXV5T1G

Overview

NUP2114UPXV5T1G from onsemi is a unidirectional ESD protection diode designed for high-speed data line protection in USB 2.0 interfaces. It features 0.8 pF typical junction capacitance, 5.0 V working peak reverse voltage (VRWM), and clamps to 9.0 V at 5 A peak pulse current - enabling signal integrity preservation in 480 Mbps data paths while meeting IEC 61000-4-2 Level 4 (±15 kV air/±13 kV contact) requirements.

For engineers reviewing the NUP2114UPXV5T1G datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for high-speed signaling, low clamping voltage under IEC-compliant ESD stress, unidirectional configuration for DC-biased lines, and SOT-553 packaging for space-constrained PCB layouts in portable electronics.

Technical Context

The NUP2114UPXV5T1G implements a single-channel unidirectional TVS structure optimized for bidirectional signal lines with DC bias, where the cathode connects to the protected I/O and anode to ground. Its low-leakage design (<1.0 µA at VRWM) minimizes standby power impact on host controllers.

Clamping behavior is characterized using the IEC 61000-4-2 8-kV contact discharge waveform, with verified clamping voltages of 9.0 V at 5 A and 10 V at 8 A - critical for safeguarding 3.3 V or 5 V logic-level transceivers without overvoltage damage.

Key Specifications

Pinout & Package

SOT-553 package (Case 463B), 5-pin, Pb-free, surface-mount. Dimensions: 1.60 mm × 1.20 mm × 0.55 mm, pitch 0.50 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD5Z5.0T1G and TPD2E001DRYR, the NUP2114UPXV5T1G offers superior clamping performance (9.0 V vs. 12 V) at 5 V operating voltage and lower leakage, making it the preferred choice for 5 V-tolerant high-speed interfaces requiring robust IEC-level protection without compromising signal fidelity.

Availability

NUP2114UPXV5T1G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI/DVI data lane hardening, and notebook computer I/O safeguarding requiring stable component supply across production lifecycles.

Supply support for NUP2114UPXV5T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and ESD protection solutions for automotive, industrial, and computing markets.

The NUP2114UPXV5T1G belongs to onsemi's NUP2114 series of ultra-low-capacitance ESD protection diodes, engineered specifically for high-speed digital interfaces where signal integrity and IEC 61000-4-2 compliance are co-primary design constraints.

FAQ

What is the primary circuit role of the NUP2114UPXV5T1G in a USB 2.0 design?

The NUP2114UPXV5T1G serves as a unidirectional ESD transient voltage suppressor placed between each USB 2.0 data line (D+, D−) and ground. Its role is to clamp electrostatic discharge events to ≤9.0 V at 5 A, preventing damage to the USB transceiver PHY while adding only 0.8 pF parasitic capacitance - ensuring full-speed 480 Mbps operation remains unaffected. The NUP2114UPXV5T1G achieves this via a low-inductance SOT-553 package with dual cathode terminals for symmetrical layout routing.

Does the NUP2114UPXV5T1G meet IEC 61000-4-2 Level 4 requirements?

Yes, the NUP2114UPXV5T1G is rated for ±15 kV air discharge and ±13 kV contact discharge per IEC 61000-4-2 Level 4, as confirmed in the official onsemi datasheet (NUP2114/D, Rev. 4). This performance is validated using the standard 150 pF/330 Ω test network and correlates directly to real-world handling ESD events in consumer and industrial environments. The NUP2114UPXV5T1G achieves this while maintaining clamping voltage below 10 V at 8 A, ensuring downstream 3.3 V ICs remain within safe operating limits.

Can the NUP2114UPXV5T1G be used for bidirectional signal lines like USB differential pairs?

Yes - although unidirectional in device architecture, the NUP2114UPXV5T1G is routinely applied to USB 2.0 D+/D− differential pairs by connecting both cathodes to their respective data lines and the anodes to ground. Its 5 V VRWM and low leakage (<1 µA) ensure no DC loading, while its symmetric clamping response (verified for ±8 kV HBM and ±15 kV IEC) provides balanced protection. The NUP2114UPXV5T1G's dual-cathode SOT-553 pinout simplifies layout for such dual-line configurations without requiring separate devices per line.

What is the thermal limit for reflow soldering of the NUP2114UPXV5T1G?

The NUP2114UPXV5T1G supports lead-free reflow soldering with a maximum peak temperature of 260 °C for 10 seconds, as specified in the Absolute Maximum Ratings table of the onsemi datasheet. This aligns with IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) 1 handling and permits compatibility with standard Class 3 electronics assembly processes. The NUP2114UPXV5T1G's SOT-553 package has been qualified for repeated thermal cycling without parameter drift or bond wire failure.

How does the NUP2114UPXV5T1G compare to bidirectional ESD diodes in HDMI applications?

In HDMI TMDS lanes, the NUP2114UPXV5T1G provides lower capacitance (0.8 pF vs. typical 1.2–1.5 pF for bidirectional variants) and tighter clamping (9.0 V @ 5 A vs. 11–13 V), which better preserves high-frequency signal integrity above 100 MHz. Its unidirectional nature suits DC-biased HDMI signals, whereas bidirectional diodes may introduce higher leakage or capacitance asymmetry. The NUP2114UPXV5T1G thus delivers superior eye diagram margin and jitter performance in 165 MHz pixel clock applications compared to generic bidirectional alternatives.