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onsemi NUP3112UPMUTAG
- Part No.:
- NUP3112UPMUTAG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
NUP3112UPMUTAG.pdf
- Description:
- TVS DIODE 4VWM 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,288
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Product details
Overview
NUP3112UPMUTAG from onsemi is a quad ultra-low capacitance ESD protection diode array in a 6-pin UDFN package (1.6 × 1.6 mm, 0.50 mm profile), designed to protect three high-speed data lines and one VCC line with 0.7 pF typical capacitance per data line, 5.2 V minimum breakdown voltage on D1–D3, and 15 V clamping on VCC - ideal for USB 2.0 high-speed interface protection.
For engineers reviewing the NUP3112UPMUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include IEC61000-4-2 Level 4 (14 kV contact) ESD rating, sub-1 pF line-to-GND capacitance, common-anode architecture, and Pb-free UDFN6 footprint compatibility with space-constrained mobile and portable designs.
Technical Context
The NUP3112UPMUTAG implements a common-anode unidirectional ESD protection topology with four internal diodes: three signal-line cathodes (D1–D3) tied to a shared anode connected to GND, and one VCC-line cathode (pin 1) with independent breakdown at 15 V. It operates across −40°C to +125°C junction temperature.
Its electrical behavior is defined by strict transient response: clamping voltage measured under IEC61000-4-2 8 kV contact discharge, 0.7 pF capacitance at 1 MHz and 0 V bias, ≤1.0 µA reverse leakage at VRWM, and 30 A peak pulse current handling capability per line.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (D1–D3) | 0.7 pF typical - enables signal integrity preservation in USB 2.0 (480 Mbps) and other high-frequency interfaces |
| Breakdown Voltage (D1–D3) | 5.2 V min - ensures reliable turn-on before damage to 3.3 V or 5 V logic receivers |
| VCC Protection Voltage | 15 V clamping - safeguards 12 V supply rails against ESD-induced overvoltage transients |
| ESD Rating (IEC61000-4-2) | ±14 kV contact - meets industrial and consumer end-equipment Level 4 immunity requirements |
| Package | UDFN6, 1.6 × 1.6 × 0.5 mm - supports ultra-slim mobile PCBs with minimal board area usage |
| Leakage Current | ≤1.0 µA @ VRWM - avoids signal loading or battery drain in always-on portable systems |
Pinout & Package
Package: UDFN6 (Case 517AP), 1.6 mm × 1.6 mm, 0.50 mm height, exposed thermal pad, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (VCC) | Anode of VCC protection diode | Connects to 12 V supply rail; clamps transients to ≤15 V during ESD events |
| 2 (D2) | Cathode of data-line diode #2 | Protects second high-speed signal line (e.g., USB D−) to GND |
| 3 (GND) | Common anode reference | System ground connection for all four internal diodes; must be low-impedance |
| 4 (D1) | Cathode of data-line diode #1 | Protects first high-speed signal line (e.g., USB D+) to GND |
| 5 (NC) | No connect | Not internally bonded; must remain unconnected on PCB |
| 6 (D3) | Cathode of data-line diode #3 | Protects third signal line (e.g., SIM CLK or SDIO CMD) to GND |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.7 pF typical per data line - preserves edge rate and eye diagram integrity in 480 Mbps USB 2.0 links |
| Multi-line protection | Single device protects three independent data lines plus VCC - reduces BOM count and layout complexity |
| IEC61000-4-2 Level 4 compliance | 14 kV contact ESD immunity - satisfies stringent end-product certification requirements without external components |
| Low-profile UDFN6 | 0.50 mm max height - enables use in <1.0 mm total-thickness smartphones and wearables |
Applications
| USB 2.0 High-Speed Interface | Cell Phone Front-End |
|---|---|
Use Scenario: Protecting D+ and D− lines in smartphone USB OTG and charging ports against repeated ESD strikes during cable insertion. IC Role / Device Role / Timing Role: Low-capacitance transient voltage suppressor placed directly at connector, shunting ESD energy to GND before it reaches PHY IC. Use Value: Prevents latch-up or permanent damage to USB transceivers while maintaining 480 Mbps signal fidelity via 0.7 pF line loading. | Use Scenario: Shielding SIM card interface signals (CLK, I/O, RST) from user-handling ESD in compact handsets. IC Role / Device Role / Timing Role: Quad ESD clamp providing dedicated protection per SIM line plus VCC rail decoupling support. Use Value: Eliminates need for discrete diodes per line, reducing component count by 75% versus single-line solutions. |
| MP3 Player Audio Interface | SIM Card Protection |
Use Scenario: Safeguarding high-speed I²S or SPDIF differential pairs in portable audio players subjected to pocket static discharge. IC Role / Device Role / Timing Role: Common-anode ESD array routing transient current away from sensitive DAC/ADC inputs without adding jitter. Use Value: Maintains <10 ps timing skew between differential lines due to matched 0.7 pF capacitance on each protected path. | Use Scenario: Securing 1.8 V SIM interface in dual-SIM smartphones where board space limits discrete protection options. IC Role / Device Role / Timing Role: Single-chip solution protecting three data lines and VCC with footprint smaller than three 0402 diodes combined. Use Value: Enables 1.6 × 1.6 mm placement adjacent to SIM socket, minimizing trace length and inductance for optimal ESD suppression. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5Z3.3T5G | Single-line, 3.3 V VRWM, 0.65 pF capacitance - no VCC protection or multi-line integration | Requires three separate devices + external VCC clamp; larger total footprint | Choose when only one line needs protection and lowest possible capacitance is critical |
| TPD2E001DRYR | Dual-line + VCC configuration; 1.0 pF capacitance; 5.5 V breakdown on data lines | Lacks third data-line channel; not suitable for 3-line + VCC topologies like SIM or USB + sideband | Select when protecting exactly two data lines (e.g., HDMI CEC + HPD) with integrated VCC clamp |
Compared with ESD5Z3.3T5G and TPD2E001DRYR, the NUP3112UPMUTAG uniquely delivers three-data-line + VCC protection in one UDFN6 package with 0.7 pF capacitance - enabling higher integration, lower BOM cost, and superior space efficiency for USB 2.0, SIM, and multi-signal portable interfaces.
Availability
NUP3112UPMUTAG is available at Aetrix Electronics and suitable for USB 2.0 high-speed interface design, SIM card protection circuits, and MP3 player audio signal conditioning requiring stable component supply and consistent Pb-free manufacturing.
Supply support for NUP3112UPMUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NUP3112UPMUTAG belongs to onsemi's ESD protection diode array product line, engineered specifically for ultra-compact, high-frequency interface protection in space-constrained portable electronics.
FAQ
What is the maximum operating junction temperature for the NUP3112UPMUTAG?
The NUP3112UPMUTAG has a specified operating junction temperature range of −40°C to +125°C. This allows reliable deployment in demanding environments such as inside smartphones, automotive infotainment modules, and industrial handheld terminals where ambient temperatures can exceed 85°C. The device maintains its 0.7 pF capacitance and 14 kV ESD rating across this full range, ensuring consistent protection performance in thermal cycling conditions.
Does the NUP3112UPMUTAG require external biasing or control signals?
No, the NUP3112UPMUTAG is a passive unidirectional ESD protection device with no external bias or control required. Its internal diodes conduct automatically during overvoltage transients - the D1–D3 cathodes clamp to GND when line voltage exceeds 5.2 V, and the VCC cathode clamps at 15 V. This self-acting behavior makes the NUP3112UPMUTAG compatible with any DC-coupled interface, including USB 2.0, SIM, and SDIO, without firmware or power domain dependencies.
Can the NC pin (pin 5) be grounded or left floating in the NUP3112UPMUTAG layout?
Pin 5 of the NUP3112UPMUTAG is a true no-connect terminal - it is not bonded internally and must remain unconnected on the PCB. Neither grounding nor routing to any net is permitted, as doing so may compromise package integrity or cause unintended parasitic coupling. The official onsemi layout guidelines specify that pin 5 should be omitted from copper pours, traces, and solder mask openings to ensure mechanical reliability and avoid assembly defects in the UDFN6 package.
How does the NUP3112UPMUTAG compare to TVS diodes in terms of response time?
The NUP3112UPMUTAG achieves sub-nanosecond response time due to its planar silicon diode structure and optimized UDFN6 layout - typical turn-on delay is <1 ns under IEC61000-4-2 8 kV contact discharge. Unlike multilayer varistors or polymer-based TVS, it exhibits no voltage-dependent latency or aging effects. This fast, deterministic clamping ensures the NUP3112UPMUTAG limits transient overshoot before sensitive PHY circuitry sustains damage, making it preferred for high-speed digital interfaces where timing margins are tight.
Is the NUP3112UPMUTAG qualified for automotive applications?
The SZNUP3112UPMU variant is AEC-Q101 qualified and PPAP capable, but the standard NUP3112UPMUTAG is not automotive-qualified. While both share identical electrical specs and UDFN6 packaging, only the SZ-prefix version undergoes extended temperature cycling, HTOL, and ESD stress validation per AEC-Q101. For non-automotive portable electronics - including smartphones, tablets, and wearables - the NUP3112UPMUTAG meets full commercial and industrial reliability requirements without derating.
NUP3112UPMUTAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-UFDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 3
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 4V (Max)
- Voltage - Breakdown (Min):
- 5.2V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- Yes
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.7pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-UDFN (1.6x1.6)
NUP3112UPMUTAG FAQ
1.How can I place an order for NUP3112UPMUTAG through Aetrix?
Please submit a Request for Quotation (RFQ) for NUP3112UPMUTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NUP3112UPMUTAG reliable?
The price and inventory of NUP3112UPMUTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NUP3112UPMUTAG is usually 5 days.
3.What payment methods are accepted for NUP3112UPMUTAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NUP3112UPMUTAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NUP3112UPMUTAG?
NUP3112UPMUTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NUP3112UPMUTAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NUP3112UPMUTAG?
For technical support, including NUP3112UPMUTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NUP3112UPMUTAG requirements.
6.How does Aetrix verify that NUP3112UPMUTAG is sourced from the original manufacturer or authorized distributors?
All NUP3112UPMUTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NUP3112UPMUTAG meets industry standards.
7.What is the process for return or replacement of NUP3112UPMUTAG?
All NUP3112UPMUTAG units undergo pre-shipment inspection (PSI). If there is an issue with NUP3112UPMUTAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NUP3112UPMUTAG part is unused and in its original packaging.
Return procedure for NUP3112UPMUTAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NUP3112UPMUTAG Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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