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onsemi NUP3115UPMUTAG
- Part No.:
- NUP3115UPMUTAG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
NUP3115UPMUTAG.pdf
- Description:
- TVS DIODE 5.5VWM 9.4VC 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:10,495
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Product details
Overview
NUP3115UPMUTAG from onsemi is a unidirectional ESD protection diode array in a 6-pin UDFN package, designed to protect three high-speed data lines and a VCC power line. It delivers 0.8 pF capacitance, 5.5 V stand-off voltage for data lines, 12 V for VCC, and IEC 61000−4−2 Level 4 (±8 kV contact) ESD protection-ideal for USB 2.0 high-speed interfaces where board space and signal integrity are critical.
For engineers reviewing the NUP3115UPMUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance (0.8 pF typ), common-anode architecture supporting independent clamping per line, VCC-rated 15 V breakdown, and verified 9.4 V clamping at 1 A for data pins-critical for preserving signal fidelity in compact portable electronics.
Technical Context
The NUP3115UPMUTAG implements a common-anode, six-terminal unidirectional TVS array with three dedicated data-line diodes (D1–D3) and one VCC-supply diode. Each data diode has a 5.5 V working peak reverse voltage and 6.8 V typical breakdown; the VCC diode features 12 V VRWM and 16 V typical breakdown.
Clamping performance is validated per IEC 61000−4−2: D1–D3 clamp to ≤9.4 V at 1 A IPP, while VCC clamps to ≤18.5 V at 1 A and ≤22 V at 3 A. Junction capacitance is measured at 0.8 pF (typ) between each data line and GND at 0 V bias and 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance | 0.8 pF typical - preserves signal integrity in USB 2.0 (480 Mbps) and other high-frequency data paths |
| Stand-off Voltage (D1–D3) | 5.5 V - ensures no conduction during normal 3.3 V or 5 V logic operation |
| Stand-off Voltage (VCC) | 12 V - supports protection of 5 V or 12 V supply rails without leakage activation |
| Breakdown Voltage (D1–D3) | 6.8 V typical - triggers clamping before downstream IC damage thresholds (~7–10 V) |
| Breakdown Voltage (VCC) | 16 V typical - enables robust 15 V protection margin for power rail transients |
| ESD Rating | IEC 61000−4−2 Level 4 (±8 kV contact) - meets industrial and consumer immunity requirements |
| Clamping Voltage (D1–D3 @ 1 A) | 9.4 V maximum - limits transient overvoltage seen by protected IC I/O pins |
Pinout & Package
Package: UDFN-6 (1.6 mm × 1.6 mm, 0.50 mm profile, Case 517AP), Pb-free, tape-and-reel (3000 units).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | D1 cathode | Protected data line 1 output; connects to system I/O trace |
| 2 | D2 cathode | Protected data line 2 output; isolated clamping path |
| 3 | VCC anode | Common anode node tied to power rail; provides VCC-side transient shunting |
| 4 | D3 cathode | Protected data line 3 output; third independent high-speed channel |
| 5 | NC | No internal connection - must be left floating or grounded per layout best practice |
| 6 | NC | No internal connection - must be left floating or grounded per layout best practice |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.8 pF typical enables use in USB 2.0, HDMI, and other >100 MHz interfaces without signal degradation |
| Common-anode architecture | Single VCC pin protects three data lines independently while minimizing footprint and routing complexity |
| Dedicated VCC clamping | 15 V minimum breakdown and 18.5 V clamping at 1 A provide robust power-rail surge suppression |
| Low leakage current | <1.0 µA at VRWM ensures minimal standby power impact on battery-powered devices |
| Pb-free UDFN package | 1.6 × 1.6 mm, 0.5 mm height supports ultra-slim mobile designs and automated SMT assembly |
Applications
| USB 2.0 High-Speed Interface | Cell Phone Front-End Protection |
|---|---|
Use Scenario: Protecting D+ and D− lines plus VBUS in smartphone USB ports against ESD events during cable insertion/removal. IC Role / Device Role: Primary ESD clamp placed directly at connector, shunting transients to GND/VCC before reaching USB PHY. Use Value: 0.8 pF capacitance avoids signal rise-time degradation; 9.4 V clamping prevents PHY latch-up or oxide damage. | Use Scenario: Safeguarding SIM card interface signals (CLK, I/O, RST) and VCC in mobile handsets exposed to frequent handling. IC Role / Device Role: Single-device solution protecting three bidirectional data lines and supply rail with shared ground return. Use Value: Common-anode design reduces component count vs. discrete diodes; 5.5 V VRWM matches 3 V SIM logic levels. |
| MP3 Player Audio/Control Bus | Portable GPS Receiver Data Lines |
Use Scenario: Shielding I²C control bus (SDA, SCL) and AVDD supply in flash-based audio players from user-touch ESD. IC Role / Device Role: Low-capacitance transient suppressor co-located with codec or flash memory controller. Use Value: Sub-1 pF capacitance prevents I²C timing violations; 6.8 V breakdown aligns with 5 V tolerant I/O domains. | Use Scenario: Protecting UART TX/RX and VDD_IO lines in compact GPS modules operating in automotive or outdoor environments. IC Role / Device Role: First-line defense against ESD coupling via antenna or button traces into baseband processor interfaces. Use Value: IEC 61000−4−2 Level 4 rating ensures compliance in harsh ESD-prone settings; 1.6 × 1.6 mm footprint saves PCB area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.85 pF capacitance; 5.5 V VRWM; dual-channel only; no VCC pin | Lacks integrated VCC protection - requires separate TVS for power rail | Choose when only two data lines need protection and board space allows discrete VCC clamp |
| ESD7L5.0DT5G | 0.55 pF capacitance; single-channel; 5.0 V VRWM; SOD-523 package | Requires three discrete devices + external VCC TVS; larger total footprint than NUP3115UPMUTAG | Prefer when lowest possible capacitance is mandatory and layout permits multi-component solution |
Compared with TPD2E001DRYR and ESD7L5.0DT5G, the NUP3115UPMUTAG uniquely integrates three data-line and one VCC protection paths in a single 1.6×1.6 mm UDFN, eliminating inter-device timing skew and reducing BOM count-critical for space-constrained USB and SIM applications.
Availability
NUP3115UPMUTAG is available at Aetrix Electronics and suitable for USB 2.0 high-speed interfaces, cell phone SIM card protection, and MP3 player control bus designs requiring stable component supply, RoHS-compliant packaging, and consistent lead-time performance.
Supply support for NUP3115UPMUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, computing, and consumer markets.
The NUP3115UPMUTAG belongs to onsemi's low-capacitance ESD protection diode family, engineered specifically for high-speed digital interfaces where signal integrity, miniaturization, and IEC-compliant transient immunity are jointly required.
FAQ
What is the primary circuit role of the NUP3115UPMUTAG in a USB 2.0 design?
The NUP3115UPMUTAG serves as a front-end ESD transient suppressor for USB 2.0 D+, D−, and VBUS lines. Its common-anode configuration allows independent clamping of all three nodes to GND while maintaining ultra-low 0.8 pF capacitance-ensuring signal integrity up to 480 Mbps without compromising IEC 61000−4−2 Level 4 (±8 kV contact) protection. The NUP3115UPMUTAG is placed directly at the USB connector to divert ESD energy before it reaches the USB transceiver.
Does the NUP3115UPMUTAG support bidirectional signal lines like USB D+ and D−?
Yes-the NUP3115UPMUTAG is a unidirectional device but configured in a common-anode topology that enables effective protection of bidirectional data lines such as USB D+ and D−. Each cathode (Pins 1, 2, 4) connects to a separate data line, while the anode (Pin 3) ties to VCC or GND depending on system grounding strategy. This arrangement clamps positive transients to VCC and negative transients to GND, making the NUP3115UPMUTAG suitable for full-duplex high-speed interfaces.
What is the maximum clamping voltage of the NUP3115UPMUTAG on its data-line pins under 1 A ESD current?
The NUP3115UPMUTAG clamps data-line pins (D1–D3) to a maximum of 9.4 V when subjected to a 1 A peak pulse current (8/20 µs waveform), as specified in the Electrical Characteristics table. This value is measured with 0 V DC bias and reflects worst-case transient suppression performance. The NUP3115UPMUTAG maintains this clamping level across temperature (−40°C to 125°C) and ensures downstream ICs remain below their absolute maximum voltage ratings during ESD events.
Can the NUP3115UPMUTAG be used to protect a 12 V power rail?
Yes-the VCC pin (Pin 3) of the NUP3115UPMUTAG has a 12 V working peak reverse voltage (VRWM2) and a 15 V minimum breakdown voltage, making it suitable for clamping transients on 12 V supply rails. At 1 A IPP, it clamps to ≤18.5 V; at 3 A IPP, clamping rises to ≤22 V. For sustained overvoltage conditions beyond ESD, external circuitry (e.g., fuse, current limiter) should be used-since the NUP3115UPMUTAG is rated for transient suppression only, not continuous overvoltage regulation.
How does the NUP3115UPMUTAG differ from discrete ESD diodes in terms of PCB layout efficiency?
The NUP3115UPMUTAG consolidates protection for three data lines and one VCC line into a single 1.6 × 1.6 mm UDFN-6 package, reducing PCB area by ~60% versus three discrete 0402 diodes plus a separate VCC TVS. Its common-anode structure eliminates redundant anode routing, minimizes ground loop inductance, and avoids timing skew between channels-key advantages in high-speed layouts. The NUP3115UPMUTAG also simplifies BOM management and reflow consistency compared to multi-part solutions.
NUP3115UPMUTAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-UFDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Steering (Rail to Rail)
- Unidirectional Channels:
- 3
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 6V
- Voltage - Clamping (Max) @ Ipp:
- 9.4V (Typ)
- Current - Peak Pulse (10/1000µs):
- 5A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- Yes
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.8pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-UDFN (1.6x1.6)
NUP3115UPMUTAG FAQ
1.How can I place an order for NUP3115UPMUTAG through Aetrix?
Please submit a Request for Quotation (RFQ) for NUP3115UPMUTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NUP3115UPMUTAG reliable?
The price and inventory of NUP3115UPMUTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NUP3115UPMUTAG is usually 5 days.
3.What payment methods are accepted for NUP3115UPMUTAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NUP3115UPMUTAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NUP3115UPMUTAG?
NUP3115UPMUTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NUP3115UPMUTAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NUP3115UPMUTAG?
For technical support, including NUP3115UPMUTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NUP3115UPMUTAG requirements.
6.How does Aetrix verify that NUP3115UPMUTAG is sourced from the original manufacturer or authorized distributors?
All NUP3115UPMUTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NUP3115UPMUTAG meets industry standards.
7.What is the process for return or replacement of NUP3115UPMUTAG?
All NUP3115UPMUTAG units undergo pre-shipment inspection (PSI). If there is an issue with NUP3115UPMUTAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NUP3115UPMUTAG part is unused and in its original packaging.
Return procedure for NUP3115UPMUTAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NUP3115UPMUTAG Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
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D5V0L1B2WS-7
Diodes Incorporated
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