onsemi NUP4012PMUTAG

Overview

NUP4012PMUTAG from onsemi is a quad unidirectional transient voltage suppressor array designed for ESD protection of high-speed data lines, featuring 0.7 pF typical capacitance, 4.0 V working peak reverse voltage (VRWM), and IEC 61000−4−2 Level 4 (±14 kV contact) ESD rating in a 1.6 × 1.6 mm UDFN6 package - deployed in USB 2.0 interfaces and SIM card circuits.

For engineers reviewing the NUP4012PMUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity, common-anode four-line protection topology, clamping voltage under 12 V at 1 A IPP, and RoHS-compliant Pb-free UDFN packaging suitable for space-constrained mobile designs.

Technical Context

This device implements a common-anode quad TVS architecture with four independent unidirectional ESD protection diodes (D1–D4) sharing a single GND terminal. Each channel provides 5.2 V minimum breakdown voltage at 1 mA and clamps transients to ≤12 V at 1 A peak pulse current.

Its 0.7 pF line-to-GND capacitance at 1 MHz and <1.0 µA reverse leakage at 4.0 V VRWM enable minimal signal distortion in high-frequency interfaces such as USB 2.0 (480 Mbps), while the UDFN6 package supports automated placement and thermal dissipation via exposed pad.

Key Specifications

Pinout & Package

UDFN6 package (Case 517AP), 1.6 mm × 1.6 mm footprint, 0.5 mm profile, with exposed thermal pad. Pin 1 marked by microdot; pins 2 and 5 are NC (no connect); pins 1, 3, 4, 6 correspond to D1, D2, D3, D4 cathodes; pin 6 also serves as common anode/GND connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with NUP4012PMUTAG, TPD4E001DRYR offers lower capacitance and clamping but reduced VRWM headroom, while ESD5V3U4-2/TR trades compactness for higher voltage tolerance and larger footprint - making NUP4012PMUTAG optimal for space-constrained 3.3 V USB/SIM designs requiring balanced ESD robustness and signal fidelity.

Availability

NUP4012PMUTAG is available at Aetrix Electronics and suitable for USB 2.0 interface protection, SIM card circuit hardening, and MP3 player audio line safeguarding requiring stable component supply across high-volume consumer electronics production.

Supply support for NUP4012PMUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient power and sensing solutions for automotive, industrial, cloud, medical, and consumer electronics.

The NUP4012PMUTAG belongs to onsemi's ESD protection portfolio, engineered specifically for ultra-low-capacitance, multi-line transient suppression in high-speed portable interfaces where board space and signal integrity are critical constraints.

FAQ

What is the maximum clamping voltage of the NUP4012PMUTAG at 1 A peak pulse current?

The NUP4012PMUTAG clamps to ≤12 V at 1 A peak pulse current (IPP), as specified in its electrical characteristics table. This value ensures protected downstream ICs experience limited voltage stress during ESD events. The clamping behavior is validated per IEC 61000−4−2 test waveforms, and the NUP4012PMUTAG maintains this performance across its −40°C to 125°C operating junction temperature range.

Does the NUP4012PMUTAG support bidirectional ESD protection?

No, the NUP4012PMUTAG is a unidirectional TVS array with common-anode configuration, designed exclusively for positive-going transients on data lines referenced to GND. It does not provide symmetrical clamping for negative excursions beyond VRWM. For bidirectional protection, a separate dual-rail design or alternative part such as NUP4105MR6T1G would be required - the NUP4012PMUTAG is optimized for 3.3 V single-supply interfaces like USB 2.0 and SIM cards.

How is the ground connection implemented in the NUP4012PMUTAG UDFN6 package?

The NUP4012PMUTAG uses pin 6 as the common anode terminal, which functions as the GND reference for all four protection channels. This pin must be connected directly to the system ground plane using low-inductance routing and thermal via stitching to the internal ground layer. The exposed copper pad beneath the UDFN6 package (Case 517AP) is electrically tied to pin 6 and must also be soldered to the same ground net to ensure effective ESD current shunting and thermal dissipation.

Can the NUP4012PMUTAG be used for HDMI or MIPI D-PHY interfaces?

The NUP4012PMUTAG is not recommended for HDMI or MIPI D-PHY due to its 0.7 pF capacitance being insufficiently low for >1 Gbps differential signaling - those interfaces typically require ≤0.3 pF devices. While the NUP4012PMUTAG's 0.7 pF is ideal for USB 2.0 (480 Mbps), HDMI 1.4+ and MIPI D-PHY v2.0 demand tighter capacitance control and differential pair matching. Use dedicated high-speed ESD arrays like ESD7L5.0D or USB3XXX series instead of the NUP4012PMUTAG for such applications.

What is the meaning of "MU" and "TAG" in the NUP4012PMUTAG orderable part number?

In NUP4012PMUTAG, "MU" denotes the UDFN6 package variant (Case 517AP), "T" indicates tape-and-reel packaging, "A" specifies Pb-free (RoHS-compliant) construction, and "G" signifies green (halogen-free) material content. The "P" reflects the base product family, and "NUP4012" identifies the quad ESD suppressor function. Thus, NUP4012PMUTAG fully describes a Pb-free, halogen-free, tape-and-reel UDFN6-packaged version of the NUP4012PMU device.