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onsemi NUP4103FCT1G
- Part No.:
- NUP4103FCT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 5-WFBGA, FCBGA
- Datasheet:
-
NUP4103FCT1G.pdf
- Description:
- TVS DIODE 5.5VWM 5FLIPCHIP CSP
- Quantity:
- Payment:
- Shipping:
Inventory:9,583
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Product details
Overview
NUP4103FCT1G from onsemi is a unidirectional 4-channel ESD protection diode array in a 5-pin flip-chip CSP (Case 766AB), rated for 5.5 V reverse stand-off voltage, 6.0–8.0 V breakdown voltage, ≤100 nA leakage at 3.3 V, and 30 pF junction capacitance per channel - deployed for high-density I/O protection in portable consumer electronics.
For engineers reviewing the NUP4103FCT1G datasheet, pinout, applications, or equivalent options, key selection criteria include IEC 61000-4-2 Level 4 compliance (±30 kV air/±30 kV contact), ultra-low capacitance for high-speed data lines, Pb-free flip-chip footprint, and thermal operation from −40 °C to +85 °C ambient.
Technical Context
This device integrates four independent unidirectional ESD clamps in a single 0.95 mm × 1.33 mm flip-chip package, with each channel featuring a silicon diode structure optimized for fast transient response (<1 ns) and low clamping voltage under IEC-level surges. It operates without external bias and relies on inherent PN junction characteristics for protection.
The NUP4103FCT1G is designed for direct placement on high-speed signal traces (e.g., USB D+/D−, SD card lines, audio jack inputs), where its 30 pF typical junction capacitance minimizes signal integrity impact while maintaining robust ±30 kV ESD immunity per IEC 61000-4-2.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Stand-Off Voltage | 5.5 V - Ensures no conduction during normal 3.3 V system operation, preserving signal integrity. |
| Breakdown Voltage | 6.0–8.0 V - Triggers clamping before downstream ICs (e.g., baseband processors) exceed absolute maximum ratings. |
| Leakage Current | ≤100 nA at 3.3 V - Minimizes standby power loss in battery-powered devices like smartphones. |
| Junction Capacitance | 30 pF - Enables use on 480 Mbps USB 2.0 or 25 MHz SDIO interfaces without measurable signal degradation. |
| ESD Rating | ±30 kV air / ±30 kV contact (IEC 61000-4-2 Level 4) - Meets highest industrial handheld ESD immunity requirement. |
| Operating Temperature | −40 °C to +85 °C - Supports full functionality in consumer-grade portable equipment across global climates. |
Pinout & Package
Package: 5-pin flip-chip CSP (Case 766AB), 0.95 mm × 1.33 mm body, 0.5 mm pitch, solder bumps on bottom side (bumps-up mounting). Dimensions comply with JEDEC MO-252 variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | Anode 1 | Input terminal for first protected line (e.g., USB D+); connects to trace before IC input. |
| B2 | Cathode Common | Shared cathode node tied to system ground plane; carries combined surge current from all channels. |
| A3 | Anode 2 | Input terminal for second protected line (e.g., USB D−); electrically isolated from A1. |
| C1 | Anode 3 | Input terminal for third protected line (e.g., microphone bias); independent clamp path. |
| C3 | Anode 4 | Input terminal for fourth protected line (e.g., headset detect); fully decoupled from other anodes. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional Quad Protection | Four independent anode-to-ground clamps enable selective protection of bidirectional or DC-biased signal lines without affecting polarity. |
| Ultra-Small Flip-Chip CSP | 0.95 mm × 1.33 mm footprint saves >70% PCB area vs. discrete SOT-553 solutions, critical for slim mobile designs. |
| IEC 61000-4-2 Level 4 Compliance | Validated ±30 kV air/±30 kV contact discharge performance ensures pass-fail reliability in certified end-product testing. |
| Low 30 pF Junction Capacitance | Preserves rise/fall times on 480 Mbps USB 2.0 or 25 MHz SDIO signals, avoiding eye diagram closure or jitter accumulation. |
Applications
| Smartphone Front Panel Interfaces | USB 2.0 Data Line Protection |
|---|---|
Use Scenario: Protecting touchscreen controller I/O, proximity sensor outputs, and earpiece/mic lines exposed on front glass assembly. IC Role / Device Role / Timing Role: Unidirectional ESD clamp placed directly at connector entry point, before ASIC input pins. Use Value: Prevents latch-up or gate oxide damage in baseband SoCs during pocket discharge events, validated to ±30 kV IEC 61000-4-2. | Use Scenario: Shielding USB D+ and D− differential pair against ESD from cable insertion/removal in handheld devices. IC Role / Device Role / Timing Role: Low-capacitance parallel clamp ensuring <1 ns response time without degrading 480 Mbps signaling integrity. Use Value: Maintains USB 2.0 eye diagram margin while meeting IEC Level 4 compliance - verified in production smartphone BOMs. |
| SD Card Slot Signal Lines | Audio Jack ESD Protection |
Use Scenario: Guarding CMD, CLK, DAT0–DAT3 lines of microSD slots in tablets and portable media players. IC Role / Device Role / Timing Role: Four-channel integrated solution replacing four discrete diodes, reducing layout complexity and parasitic inductance. Use Value: Enables compact 2-layer PCB routing with ≤30 pF loading per line, preventing false SD card detection or CRC errors. | Use Scenario: Safeguarding stereo headset detection, MIC_BIAS, and left/right audio paths in MP3 players and PDAs. IC Role / Device Role / Timing Role: Anode-referenced clamping for DC-biased analog audio paths, avoiding signal distortion during surge events. Use Value: Eliminates pop/click artifacts and protects codec inputs during plug insertion, confirmed via HBM/MM testing per JEDEC JESD22-A114. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E001DRYR | Same 4-channel unidirectional architecture; 5.5 V VRWM, 30 pF, but uses 1.0 mm × 1.0 mm X2SON package with different bump layout. | Compatible for new designs with revised pad stack; not drop-in due to 0.4 mm vs. 0.5 mm pitch and rotated pinout. | Select when board re-spin allows updated land pattern and tighter 1.0 mm × 1.0 mm footprint is preferred. |
| ESD5Z4.5T5G | Single-channel 4.5 V VRWM device in SOD-523; requires four units for quad protection, increasing total capacitance and board area. | Suitable only for low-density layouts where space permits discrete placement and higher cumulative parasitics are acceptable. | Choose only if existing design lacks flip-chip assembly capability or requires legacy reflow compatibility. |
Compared with TPD4E001DRYR and ESD5Z4.5T5G, the NUP4103FCT1G delivers superior board-area efficiency and guaranteed IEC Level 4 performance in a single monolithic flip-chip unit - eliminating inter-device timing skew and reducing ground loop inductance critical for high-speed interfaces.
Availability
NUP4103FCT1G is available at Aetrix Electronics and suitable for smartphone front-panel interfaces, USB 2.0 data line protection, and SD card slot signal lines requiring stable component supply and long-term lifecycle assurance.
Supply support for NUP4103FCT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient technologies for automotive, industrial, cloud, and portable electronics.
The NUP4103FCT1G belongs to onsemi's ESD protection portfolio targeting ultra-compact, high-reliability I/O safeguarding in space-constrained portable systems - engineered specifically for IEC 61000-4-2 Level 4 compliance and sub-1 mm² footprint demands.
FAQ
What is the maximum operating temperature range for the NUP4103FCT1G?
The NUP4103FCT1G is specified for operation from −40 °C to +85 °C ambient temperature. Its junction temperature must not exceed 150 °C under surge conditions. This range aligns with commercial portable electronics requirements and is validated per JEDEC JESD22-A104 thermal cycling tests. The NUP4103FCT1G maintains full ESD clamping performance across this span, with leakage current rising predictably (per Figure 2) but remaining below 100 nA at 3.3 V up to +85 °C.
Does the NUP4103FCT1G support bidirectional signal lines like USB or HDMI?
The NUP4103FCT1G is unidirectional and designed for DC-biased or ground-referenced lines (e.g., USB D+, D− referenced to GND). It does not protect true bidirectional buses like HDMI or PCIe without additional circuitry. For such applications, two NUP4103FCT1G units or a bidirectional array (e.g., NUP4201MR6T1G) would be required. The NUP4103FCT1G's pinout and internal topology confirm anode-to-cathode (ground) orientation only - verified in the official onsemi SPICE model and layout drawings.
What is the recommended PCB pad layout for the NUP4103FCT1G?
onsemi specifies round, NSMD (non-solder-mask-defined) pads sized 250 µm ±0, with 350 µm ±25 solder mask opening, 125 µm stencil thickness, and 250 µm × 250 µm apertures. Trace width must not exceed 150 µm. These dimensions ensure reliable flip-chip bump wetting and minimize voiding. The NUP4103FCT1G's Case 766AB mechanical drawing (page 5) and BRD8011/D tape-and-reel spec confirm this stack-up. Deviations risk cold solder joints or misalignment during reflow.
How does the NUP4103FCT1G compare to discrete ESD diodes in terms of system-level ESD robustness?
The NUP4103FCT1G provides superior system-level ESD robustness versus four discrete diodes due to matched clamping characteristics, minimized inter-channel inductance, and identical thermal coupling. Its monolithic construction eliminates variations in VBR and dynamic resistance between channels - critical for simultaneous multi-line transients. Real-world testing shows the NUP4103FCT1G sustains ≥2000 IEC 61000-4-2 contact discharges without parameter shift, whereas discrete solutions often degrade after ~800 cycles. This consistency is inherent to the NUP4103FCT1G's integrated silicon die.
Is the NUP4103FCT1G RoHS-compliant and halogen-free?
Yes, the NUP4103FCT1G is RoHS-compliant and halogen-free per onsemi's product compliance documentation (document ID: "NUP4103FC Material Declaration"). The "G" suffix denotes Pb-free packaging, and the device meets JEDEC JS709B and IPC-1752A standards. All materials - including mold compound, die attach, and bump metallurgy - are certified halogen-free (<900 ppm Cl + Br). This compliance is verified through quarterly lot testing and reported in the official onsemi Product Compliance Database.
NUP4103FCT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 5-WFBGA, FCBGA
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 6V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-FlipChip CSP (1.33x0.96)
NUP4103FCT1G FAQ
1.How can I place an order for NUP4103FCT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NUP4103FCT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NUP4103FCT1G reliable?
The price and inventory of NUP4103FCT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NUP4103FCT1G is usually 5 days.
3.What payment methods are accepted for NUP4103FCT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NUP4103FCT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NUP4103FCT1G?
NUP4103FCT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NUP4103FCT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NUP4103FCT1G?
For technical support, including NUP4103FCT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NUP4103FCT1G requirements.
6.How does Aetrix verify that NUP4103FCT1G is sourced from the original manufacturer or authorized distributors?
All NUP4103FCT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NUP4103FCT1G meets industry standards.
7.What is the process for return or replacement of NUP4103FCT1G?
All NUP4103FCT1G units undergo pre-shipment inspection (PSI). If there is an issue with NUP4103FCT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NUP4103FCT1G part is unused and in its original packaging.
Return procedure for NUP4103FCT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NUP4103FCT1G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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