onsemi NUP4105MUTAG

Overview

NUP4105MUTAG from onsemi is a low-capacitance ESD protection array designed for high-speed data lines, featuring 5 pF max capacitance between I/O and GND, 3.3 V reverse working voltage, 5.3 V typical breakdown voltage, 14 V clamping voltage at 25 A, and compliance with IEC 61000−4−2 Level 4 (18 kV contact). It protects USB 2.0, DVI, and T1/E1 interfaces.

For engineers reviewing the NUP4105MUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include its 3.3 V VRWM, sub-5 pF I/O-to-GND capacitance, 26 A peak pulse current rating, 18 kV IEC ESD robustness, and UDFN10 (2.6×2.6 mm) package suitability for space-constrained high-speed layouts.

Technical Context

The NUP4105MUTAG integrates five bidirectional TVS diodes in a single UDFN10 package, with four I/O channels referenced to a common GND pad (Pin 5). Each channel provides symmetric clamping for ±ESD transients while maintaining signal integrity via ultra-low junction capacitance.

Its architecture supports transient suppression per IEC 61000−4−2 (18 kV contact), HBM (16 kV), and MM (400 V), with clamping performance validated at 1 A, 10 A, and 25 A pulse currents - critical for preserving eye diagram margins in USB 2.0 and DVI links.

Key Specifications

Pinout & Package

Package: UDFN10 (2.6 mm × 2.6 mm, 0.5 mm pitch), exposed thermal pad (Pin 5 = GND), Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with SZESD7371MUTAG and TPD4E001DQAR, the NUP4105MUTAG delivers optimal balance of 3.3 V compatibility, 5 pF capacitance, and 26 A surge capacity - making it the preferred choice for USB 2.0 and DVI designs requiring minimal signal loading and certified 18 kV ESD resilience.

Availability

NUP4105MUTAG is available at Aetrix Electronics and suitable for USB 2.0 interface protection, DVI link hardening, and T1/E1 telecom line safeguarding requiring stable component supply and long-term production continuity.

Supply support for NUP4105MUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NUP4105MUTAG belongs to onsemi's low-capacitance ESD protection array product line, engineered specifically for high-speed serial interfaces where signal fidelity and system-level ESD compliance are co-critical design constraints.

FAQ

What is the maximum operating junction temperature for the NUP4105MUTAG?

The NUP4105MUTAG has an operating junction temperature range of −40°C to +125°C. This rating ensures reliable transient suppression in industrial and automotive environments where ambient temperatures may exceed 85°C. The UDFN10 package's exposed GND pad aids thermal dissipation, helping maintain safe TJ during repetitive ESD events. Always verify PCB copper area and airflow in final layout to sustain this rating for NUP4105MUTAG.

Does the NUP4105MUTAG support bidirectional ESD protection on all channels?

Yes, the NUP4105MUTAG provides bidirectional ESD protection across all four I/O channels (Pins 1/2, 3/4, 7/8, 9/10). Each channel consists of back-to-back diodes referenced to Pin 5 (GND), enabling symmetric clamping of both positive and negative transients. This architecture is essential for protecting AC-coupled high-speed signals like USB D+ and D− without DC bias concerns. The NUP4105MUTAG datasheet confirms this behavior under IEC 61000−4−2 testing.

What is the significance of the "T" and "AG" suffixes in NUP4105MUTAG?

The "T" denotes tape-and-reel packaging (3000 units per reel), and "AG" indicates Pb-free (RoHS-compliant) construction with standard onsemi green mold compound. These suffixes confirm that the NUP4105MUTAG meets environmental compliance requirements and is optimized for automated SMT assembly. The UDFN10 footprint and solder profile align with IPC-J-STD-020 moisture sensitivity level 1, making NUP4105MUTAG suitable for high-volume manufacturing without baking.

Can the NUP4105MUTAG be used for HDMI interface protection?

The NUP4105MUTAG is not recommended for HDMI 1.4 or later interfaces due to its 5 pF max I/O–GND capacitance, which may degrade 3.4 Gbps+ eye diagrams. While it meets HDMI's basic ESD requirement (IEC 61000−4−2 Level 4), its capacitance exceeds typical HDMI design targets (<1.5 pF). For HDMI, consider dedicated low-capacitance arrays like NUP4201MR6T1G. The NUP4105MUTAG remains ideal for USB 2.0 and DVI where 5 pF is within spec.

How does the clamping voltage of the NUP4105MUTAG vary with surge current?

The NUP4105MUTAG exhibits progressive clamping: 6.2 V at 1 A, 10 V at 10 A, and 14 V at 25 A (8×20 µs waveform). This behavior reflects its silicon avalanche structure - higher currents induce greater voltage drop across internal dynamic resistance. Designers must ensure downstream ICs tolerate up to 14 V during worst-case surges. The NUP4105MUTAG's specified VC values are measured per Figure 1 in the datasheet, with Pin 5 as the reference GND node.