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onsemi NUP4212UPMUTAG
- Part No.:
- NUP4212UPMUTAG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
NUP4212UPMUTAG.pdf
- Description:
- TVS DIODE 4VWM 14.3VC 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,512
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Product details
Overview
NUP4212UPMUTAG from onsemi is a quad-channel ESD protection diode array in a 6-pin UDFN package, featuring 0.7 pF typical capacitance per data line, 5.2 V minimum breakdown voltage for D1–D4 pins, and 15 V clamping capability for V1/V2 pins-designed to safeguard high-speed USB 2.0 interfaces against IEC61000-4-2 Level 4 (±14 kV contact) ESD events.
For engineers reviewing the NUP4212UPMUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity, common-anode quad-diode topology for compact multi-line protection, and verified 15 V surge rating on dedicated VCC-protection pins.
Technical Context
The NUP4212UPMUTAG implements a unidirectional common-anode ESD protection architecture with four independent 5.2 V-rated data-line diodes (D1–D4) and two 15 V-rated VCC-protection diodes (V1, V2), all sharing a single GND terminal. Its low-leakage design (<1.0 µA at VRWM) and fast response ensure minimal interference with high-frequency signaling.
Clamping performance is validated per IEC61000-4-2 waveform: VC ≤14.3 V at IPP = 1 A, with full ESD suppression captured in oscilloscope screenshots across ±8 kV contact discharge. The device operates from −40°C to +125°C and supports Pb-free reflow up to 260°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance (D1–D4) | 0.7 pF typical - preserves signal integrity on USB 2.0 high-speed (480 Mbps) lines |
| Breakdown Voltage (D1–D4) | 5.2 V min - ensures reliable turn-on before damage to 3.3 V/5 V interface ICs |
| Breakdown Voltage (V1, V2) | 13.5–15.8 V - protects 12–15 V supply rails without false triggering |
| ESD Rating | IEC61000-4-2 Level 4, ±14 kV contact - meets industrial and mobile end-equipment compliance |
| Clamping Voltage | ≤14.3 V @ 1 A IPP - limits transient overvoltage seen by downstream PHY or controller |
| Leakage Current | <1.0 µA @ VRWM - avoids DC loading of sensitive analog or reference circuits |
| Package | UDFN6, 1.6 × 1.6 × 0.5 mm - enables placement adjacent to USB connectors in space-constrained layouts |
Pinout & Package
UDFN6 package (Case 517AP), 1.6 mm × 1.6 mm footprint, 0.5 mm profile, with exposed thermal pad and solderable terminals. Pin 1 marked via microdot or laser etch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | D1 Cathode | Protected data line 1 (e.g., USB D+) |
| 2 | D2 Cathode | Protected data line 2 (e.g., USB D−) |
| 3 | V2 Anode | 15 V surge protection for second VCC rail or auxiliary supply |
| 4 | D3 Cathode | Protected data line 3 (e.g., SIM CLK) |
| 5 | D4 Cathode | Protected data line 4 (e.g., SIM I/O) |
| 6 | V1 Anode | 15 V surge protection for primary VCC rail (e.g., USB VBUS) |
Key Features
| Feature | Design Value |
|---|---|
| Quad data-line protection + dual VCC protection | Single-device solution for full USB 2.0 port (D+, D−, VBUS, ID/GND) plus one extra data line |
| 0.7 pF typical line-to-GND capacitance | Enables use in >480 Mbps differential signaling without measurable eye diagram degradation |
| Common-anode configuration | Reduces PCB trace length and parasitic inductance between protected lines and shared GND |
| IEC61000-4-2 Level 4 certified | Validated clamping behavior under real-world ±14 kV contact discharge per international standard |
| Pb-free UDFN6 package | Complies with RoHS and JEDEC J-STD-020 reflow profiles up to 260°C |
Applications
| USB 2.0 High-Speed Interface | Cell Phone Front-End Protection |
|---|---|
Use Scenario: Protecting D+ and D− lines of a smartphone USB OTG port during hot-plug and cable discharge events. IC Role / Device Role / Timing Role: ESD transient suppressor placed directly at USB connector, clamping surges before they reach the USB transceiver PHY. Use Value: 0.7 pF capacitance prevents signal rise-time degradation; 14.3 V clamping ensures PHY I/O stays within absolute maximum ratings. | Use Scenario: Safeguarding SIM card interface signals (CLK, I/O, RST, VCC) against user-handling ESD in slim-profile handsets. IC Role / Device Role / Timing Role: Multi-line protector with dedicated V1/V2 pins assigned to SIM VCC and backup power rails. Use Value: Dual 15 V-rated anodes allow independent surge protection for primary and auxiliary SIM supplies without external components. |
| MP3 Player Audio/Data Port | SIM Card Protection |
Use Scenario: Shielding mini-USB or micro-USB ports on portable audio players from repeated insertion/removal ESD stress. IC Role / Device Role / Timing Role: Low-capacitance shunt diode array connected line-to-GND, operating passively with no bias required. Use Value: Sub-1 pF capacitance maintains audio DAC output fidelity and digital data timing margins across temperature. | Use Scenario: Providing robust ESD immunity for SIM card slots in LTE modules where board space prohibits discrete diode arrays. IC Role / Device Role / Timing Role: Quad-channel clamp with shared GND and two dedicated VCC protection paths for SIM VCC and antenna switch control lines. Use Value: Integrated 15 V V1/V2 pins eliminate need for separate TVS devices on SIM power rails, reducing BOM count by two parts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E001DRYR | 0.5 pF typical capacitance; 5.5 V breakdown; no dedicated VCC-protection pins | Lacks dual 15 V VCC clamping; requires external TVS for supply rail protection | Preferred when only data-line protection is needed and lowest possible capacitance is critical |
| ESD5451N-2/TR | 0.8 pF typical capacitance; 5.0 V breakdown; 12 V VCC rating (vs. 15 V) | Lower VCC clamping threshold may trigger prematurely on noisy 12 V rails | Selected for cost-sensitive designs where 12 V VCC tolerance suffices and footprint compatibility exists |
Compared with TPD4E001DRYR and ESD5451N-2/TR, the NUP4212UPMUTAG uniquely integrates dual 15 V-rated VCC protection into a quad-data-line array-enabling complete USB port protection with one device while maintaining sub-1 pF signal path loading.
Availability
NUP4212UPMUTAG is available at Aetrix Electronics and suitable for USB 2.0 interface protection, mobile handset front-end hardening, and SIM card slot ESD mitigation requiring stable component supply and consistent Pb-free manufacturing.
Supply support for NUP4212UPMUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and mobile applications.
The NUP4212UPMUTAG belongs to onsemi's ESD protection diode array product line, engineered specifically for ultra-low-capacitance, multi-line transient suppression in high-speed consumer and portable electronics interfaces.
FAQ
What is the maximum clamping voltage of the NUP4212UPMUTAG during an ESD event?
The NUP4212UPMUTAG exhibits a maximum clamping voltage of 14.3 V when subjected to a 1 A peak pulse current (IPP), as specified in its electrical characteristics table. This value is measured under standardized 8/20 µs surge conditions and ensures downstream ICs remain within safe operating voltage limits during IEC61000-4-2 Level 4 ESD events. Real-world clamping waveforms are documented in the NUP4212UPMUTAG datasheet figures.
Can the NUP4212UPMUTAG be used to protect both data lines and a VCC rail simultaneously?
Yes-the NUP4212UPMUTAG is explicitly designed for simultaneous protection: pins D1–D4 provide ultra-low-capacitance ESD suppression for four independent data lines (e.g., USB D+, D−, SIM CLK, SIM I/O), while pins V1 and V2 deliver dedicated 15 V-rated clamping for two separate VCC rails. Its common-anode architecture allows shared GND connection without compromising isolation between protected domains.
Is the NUP4212UPMUTAG compatible with automated optical inspection (AOI) after reflow?
Yes-the NUP4212UPMUTAG's UDFN6 package features a visible top-side marking (NUP4212UPMU) and coplanar terminals conforming to JEDEC standards. Its 1.6 × 1.6 mm footprint, 0.5 mm profile, and defined solder mask openings support reliable AOI detection of solder joint quality, bridging, and component placement accuracy in high-volume SMT lines.
Does the NUP4212UPMUTAG require external biasing or control signals to operate?
No-the NUP4212UPMUTAG is a passive, unidirectional ESD protection diode array that functions without any external power, bias, or control circuitry. It relies solely on its internal PN junction characteristics to clamp transients when voltage exceeds the breakdown threshold. This zero-bias operation simplifies integration and eliminates standby current draw in battery-powered devices using the NUP4212UPMUTAG.
What is the thermal performance limit for continuous operation of the NUP4212UPMUTAG?
The NUP4212UPMUTAG supports continuous operation across an ambient temperature range of −40°C to +125°C, with a maximum junction temperature (TJ) rating of 125°C. Its UDFN6 package includes an exposed copper thermal pad that enhances heat dissipation when properly soldered to a PCB thermal plane-critical for sustained reliability in thermally dense mobile and automotive applications using the NUP4212UPMUTAG.
NUP4212UPMUTAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-UFDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 4V (Max)
- Voltage - Breakdown (Min):
- 5.2V
- Voltage - Clamping (Max) @ Ipp:
- 14.3V
- Current - Peak Pulse (10/1000µs):
- 1A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- Yes
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.7pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-UDFN (1.6x1.6)
NUP4212UPMUTAG FAQ
1.How can I place an order for NUP4212UPMUTAG through Aetrix?
Please submit a Request for Quotation (RFQ) for NUP4212UPMUTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NUP4212UPMUTAG reliable?
The price and inventory of NUP4212UPMUTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NUP4212UPMUTAG is usually 5 days.
3.What payment methods are accepted for NUP4212UPMUTAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NUP4212UPMUTAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NUP4212UPMUTAG?
NUP4212UPMUTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NUP4212UPMUTAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NUP4212UPMUTAG?
For technical support, including NUP4212UPMUTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NUP4212UPMUTAG requirements.
6.How does Aetrix verify that NUP4212UPMUTAG is sourced from the original manufacturer or authorized distributors?
All NUP4212UPMUTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NUP4212UPMUTAG meets industry standards.
7.What is the process for return or replacement of NUP4212UPMUTAG?
All NUP4212UPMUTAG units undergo pre-shipment inspection (PSI). If there is an issue with NUP4212UPMUTAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NUP4212UPMUTAG part is unused and in its original packaging.
Return procedure for NUP4212UPMUTAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NUP4212UPMUTAG Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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