onsemi NUP4302MR6T1G
- Part No.:
- NUP4302MR6T1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
NUP4302MR6T1G.pdf
- Description:
- TVS DIODE 25VWM 6TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:22,490
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NUP4302MR6T1G from onsemi is a quad-channel Schottky diode array designed for ESD protection of high-speed data lines, featuring 30 V reverse breakdown voltage, ≤1.00 V forward voltage at 100 mA, 28 pF I/O-to-GND capacitance, 5.0 ns reverse recovery time, and IEC 61000-4-2 Level 4 compliance - deployed in USB 2.0 data line protection.
For engineers reviewing the NUP4302MR6T1G datasheet, pinout, applications, or equivalent options, key selection criteria include low-capacitance ESD clamping (28 pF), fast transient response (5.0 ns trr), TSOP-6 package compatibility with high-density PCB layouts, and Class 3B HBM ESD rating (>16 kV).
Technical Context
The NUP4302MR6T1G integrates four independent Schottky diodes in a single TSOP-6 package, each configured as an anode-to-I/O cathode-to-VCC or cathode-to-GND clamp path. It uses PN junction guard ring structure to enhance ESD robustness without compromising switching speed.
Its electrical behavior is defined by low VF (0.28 V typ. at 0.1 mA), tight CT matching across channels (28 pF I/O-to-GND, 18 pF I/O-to-I/O), and stable operation from −55 °C to +125 °C junction temperature - enabling reliable use in portable and display interface environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Breakdown Voltage | 30 V - sets maximum allowable signal swing before clamping activation in USB/DVI data lines |
| Forward Voltage (IF = 100 mA) | 1.00 V - ensures minimal voltage drop during fault current conduction, preserving signal integrity |
| Total Capacitance (I/O to GND) | 28 pF - enables <100 Mbps data rates in USB 2.0 without excessive signal distortion |
| Reverse Recovery Time | 5.0 ns - supports fast transient suppression for ESD pulses with sub-ns rise times |
| ESD Rating (HBM) | Class 3B (>16 kV) - exceeds IEC 61000-4-2 Level 4 requirements for system-level ESD immunity |
| Junction Temperature Range | −55 °C to +125 °C - qualified for industrial and automotive display module environments |
Pinout & Package
Package: TSOP-6 (Case 318G, 3.00 × 1.50 × 0.90 mm, 0.95 mm pitch), Pb-free, surface-mount.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (I/O) | Anode of Diode 1 | Connects to protected data line (e.g., USB D+); clamps to VCC or GND during overvoltage |
| 2 (GND) | Common Cathode Reference | Provides low-inductance return path for all four diodes' cathode connections |
| 3 (I/O) | Anode of Diode 2 | Second protected data line (e.g., USB D−); shares same VCC/GND clamping architecture |
| 4 (I/O) | Anode of Diode 3 | Third I/O channel - supports multi-lane interfaces like DVI or parallel display buses |
| 5 (VCC) | Positive Clamp Rail | Bias rail for positive-going ESD transients; must be decoupled near device |
| 6 (I/O) | Anode of Diode 4 | Fourth protected line; completes quad-channel configuration for full differential pair + aux line coverage |
Key Features
| Feature | Design Value |
|---|---|
| Quad Schottky Diode Array | Four independent low-VF diodes in one TSOP-6 footprint - reduces board area vs. discrete solutions |
| IEC 61000-4-2 Level 4 Compliance | Withstands ±8 kV contact / ±15 kV air discharge - meets end-equipment certification requirements |
| Low I/O-to-GND Capacitance | 28 pF typical - preserves signal edge rate in USB 2.0 (480 Mbps) and DVI-TMDS links |
| Pb-Free TSOP-6 Package | RoHS-compliant, reflow-solderable, JEDEC-standard footprint - supports automated SMT assembly |
| PN Junction Guard Ring | Enhances ESD robustness without increasing leakage - maintains <30 nA IR at 25 V reverse bias |
Applications
| USB 2.0 Interface Protection | DVI Signal Line Protection |
|---|---|
Use Scenario: Protecting bidirectional D+ and D− data lines in host/peripheral USB 2.0 ports against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Low-capacitance bidirectional ESD clamp that activates within nanoseconds to shunt transient energy to VCC or GND rails. Use Value: Prevents damage to USB transceivers while maintaining eye diagram integrity at 480 Mbps due to 28 pF capacitance and 5.0 ns trr. | Use Scenario: Safeguarding TMDS clock and data channels in digital video interface connections between GPUs and flat-panel displays. IC Role / Device Role / Timing Role: Four-channel ESD suppressor placed at display connector to absorb fast-rising ESD pulses before reaching timing-critical receiver inputs. Use Value: Enables compliance with IEC 61000-4-2 Level 4 without degrading TMDS signal rise/fall times (<300 ps) thanks to matched 18–28 pF inter-channel capacitance. |
| Monitor Power/Data Port | Industrial Touchscreen Interface |
Use Scenario: Securing auxiliary control lines (DDC, HPD, power detect) alongside main video lanes in monitor backplane designs. IC Role / Device Role / Timing Role: Multi-function ESD protector handling mixed-signal paths - analog HPD detection, I²C DDC bus, and 5 V power sense lines. Use Value: Single-device solution eliminates need for separate TVS arrays, reducing BOM count and layout complexity while meeting UL 94 V-0 flammability standard. | Use Scenario: Hardening resistive or capacitive touchscreen controller I/O pins exposed on front-panel connectors in factory HMIs. IC Role / Device Role / Timing Role: Quad-channel transient suppressor placed at connector entry point to divert ESD from microcontroller GPIOs and ADC reference inputs. Use Value: Maintains signal fidelity for touch coordinate sampling (≤10 kSPS) with <30 nA reverse leakage, ensuring stable baseline readings under repeated ESD stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5Z3.3T5G | Single-channel, 3.3 V working voltage, 12 pF capacitance, SOD-523 package | Lower clamping voltage but requires four discrete placements; unsuitable for space-constrained multi-line routing | Select when ultra-low capacitance (<15 pF) is prioritized over integration density and board area |
| CM1213A-04SO | Quad-channel, 5.5 V working voltage, 30 pF capacitance, SOIC-8 package | Larger footprint (4.9 × 6.0 mm), higher parasitic inductance - limits effectiveness above 200 MHz | Prefer when existing SOIC-8 footprints exist and thermal dissipation >225 mW is required |
Compared with ESD5Z3.3T5G and CM1213A-04SO, the NUP4302MR6T1G delivers optimal balance of integration (quad-channel in 3.0 × 1.5 mm), bandwidth (28 pF + 5.0 ns trr), and system-level ESD margin (16 kV HBM), making it ideal for compact high-speed interface protection where layout area and signal fidelity are critical.
Availability
NUP4302MR6T1G is available at Aetrix Electronics and suitable for USB 2.0 port hardening, DVI video interface protection, and industrial touchscreen I/O safeguarding requiring stable component supply and long-term production continuity.
Supply support for NUP4302MR6T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud, and consumer markets.
The NUP4302MR6T1G belongs to onsemi's ESD protection portfolio, engineered specifically for high-speed digital interface hardening - emphasizing low capacitance, fast response, and compact packaging for space-constrained portable and display systems.
FAQ
What is the primary function of the NUP4302MR6T1G in circuit design?
The NUP4302MR6T1G serves as a quad-channel ESD protection device for high-speed data lines, using Schottky diodes to clamp transient voltages to VCC or GND. Its 28 pF I/O-to-GND capacitance and 5.0 ns reverse recovery time make it suitable for USB 2.0 and DVI interfaces. The NUP4302MR6T1G is not a voltage regulator or signal conditioner - it operates exclusively as a passive transient suppressor activated only during overvoltage events.
Does the NUP4302MR6T1G require external biasing or control signals to operate?
No, the NUP4302MR6T1G is a passive ESD protection device requiring no external power, enable signals, or configuration. It functions automatically via internal Schottky junctions: anodes connect to protected I/O lines, cathodes tie to VCC (pin 5) and GND (pin 2). The NUP4302MR6T1G activates only during overvoltage transients - no standby current or active mode is involved.
Can the NUP4302MR6T1G be used for DC power line protection?
The NUP4302MR6T1G is not rated for continuous DC power line protection. Its 200 mA forward current rating and 225 mW power dissipation are intended for short-duration ESD pulse absorption, not steady-state overcurrent or surge suppression. For 5 V power rail protection, dedicated TVS diodes like SMAJ5.0A are recommended. The NUP4302MR6T1G should only be applied to signal lines with peak transient energy below its specified clamping capability.
How does the NUP4302MR6T1G compare to standard TVS diodes in high-speed applications?
Unlike avalanche-based TVS diodes, the NUP4302MR6T1G uses Schottky junctions to achieve lower clamping voltage (VF ≈ 0.45 V at 10 mA) and faster response (5.0 ns trr), minimizing signal distortion in USB/DVI links. Standard TVS devices typically exhibit >100 pF capacitance and slower turn-on - making the NUP4302MR6T1G preferable where signal integrity at >100 Mbps is critical. Its 28 pF capacitance is measured per I/O-to-GND path, not total device capacitance.
Is the NUP4302MR6T1G compatible with lead-free reflow soldering processes?
Yes, the NUP4302MR6T1G is supplied in a Pb-free TSOP-6 package (marked "G" suffix) and qualified for standard lead-free reflow profiles, including peak temperatures up to 260 °C. Its moisture sensitivity level (MSL) is consistent with JEDEC J-STD-020 requirements for small-outline packages. The NUP4302MR6T1G's thermal performance remains stable across reflow cycles, with no degradation in ESD rating or forward voltage characteristics post-assembly.
NUP4302MR6T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Steering (Rail to Rail)
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25V (Max)
- Voltage - Breakdown (Min):
- 30V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 28pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
NUP4302MR6T1G FAQ
1.How can I place an order for NUP4302MR6T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NUP4302MR6T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NUP4302MR6T1G reliable?
The price and inventory of NUP4302MR6T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NUP4302MR6T1G is usually 5 days.
3.What payment methods are accepted for NUP4302MR6T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NUP4302MR6T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NUP4302MR6T1G?
NUP4302MR6T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NUP4302MR6T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NUP4302MR6T1G?
For technical support, including NUP4302MR6T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NUP4302MR6T1G requirements.
6.How does Aetrix verify that NUP4302MR6T1G is sourced from the original manufacturer or authorized distributors?
All NUP4302MR6T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NUP4302MR6T1G meets industry standards.
7.What is the process for return or replacement of NUP4302MR6T1G?
All NUP4302MR6T1G units undergo pre-shipment inspection (PSI). If there is an issue with NUP4302MR6T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NUP4302MR6T1G part is unused and in its original packaging.
Return procedure for NUP4302MR6T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NUP4302MR6T1G Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

