onsemi NUP45V6P5T5G

Overview

NUP45V6P5T5G from onsemi is a quad unidirectional ESD protection diode array in SOT-953 package, rated for 5.6 V breakdown voltage (min), 3.0 V working peak reverse voltage, and 10.5 V clamping voltage at 1 A pulse current. It delivers <1 µA leakage at 3 V and 13–17 pF capacitance at 0 V bias, targeting high-density I/O line protection in portable electronics.

For engineers reviewing the NUP45V6P5T5G datasheet, pinout, applications, or equivalent options, key selection criteria include IEC 61000-4-2 Level 4 ESD rating, low-capacitance signal integrity preservation, compact 1.00 × 0.80 mm footprint, and quad-line integration for space-constrained serial/parallel port and microprocessor interface protection.

Technical Context

This device implements four independent unidirectional silicon avalanche diodes in a single monolithic chip, each configured as a grounded-cathode clamp to protect I/O lines against fast transients. Its low 13–17 pF capacitance at 0 V bias ensures minimal signal distortion on high-speed data lines such as USB 2.0 or audio interfaces.

The thermal resistance of 560 °C/W and 150 °C maximum junction temperature support operation in thermally constrained handheld enclosures. Clamping occurs at ≤10.5 V under 1 A 8/20 µs surge, with breakdown tightly specified between 5.3 V and 5.6 V at 1 mA test current.

Key Specifications

Pinout & Package

SOT-953 is a 5-pin miniature surface-mount package with exposed pad (Case 527AE), measuring 1.00 mm × 0.80 mm × 0.37 mm and featuring 0.35 mm lead pitch. Pin 1 is marked with a dot; pins are arranged linearly with pin 5 as common cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD5Z5.0T1G and CM1213A-04SO, the NUP45V6P5T5G uniquely balances quad-line integration, 1.00 × 0.80 mm footprint, and 13–17 pF capacitance-making it optimal for space-limited, high-speed I/O protection where minimizing trace length and parasitic capacitance is critical.

Availability

NUP45V6P5T5G is available at Aetrix Electronics and suitable for cellular handsets, notebook USB ports, and microprocessor GPIO protection requiring stable component supply across high-mix, low-volume production runs.

Supply support for NUP45V6P5T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and consumer markets.

The NUP45V6P5T5G belongs to onsemi's ESD Protection Diode Array product line, engineered specifically for ultra-compact, low-capacitance transient suppression on high-speed digital and audio interfaces in portable electronics.

FAQ

What is the maximum clamping voltage of the NUP45V6P5T5G under ESD stress?

The NUP45V6P5T5G clamps to a maximum of 10.5 V when subjected to a 1 A 8/20 µs surge current pulse, as specified in its electrical characteristics table. This value ensures downstream ICs-such as USB transceivers or audio codecs-are exposed to non-destructive voltage levels during IEC 61000-4-2 Level 4 ESD events. The clamping performance is validated at 25°C ambient and remains stable across the −55°C to +150°C operating junction range.

Does the NUP45V6P5T5G support bidirectional signal lines like USB D+ and D−?

No-the NUP45V6P5T5G contains four unidirectional diodes with a shared cathode (pin 5), meaning it protects only positive-going transients on lines referenced to ground. For true bidirectional protection (e.g., full USB 2.0 differential pair), two NUP45V6P5T5G devices or a dedicated bidirectional array such as the NUP4201MR6T1G would be required. Its architecture is optimized for single-ended I/O like GPIO, UART, or I²S clock/data lines.

What is the thermal derating behavior of the NUP45V6P5T5G above 25°C ambient?

Above 25°C, the NUP45V6P5T5G must be derated at 4.5 mW/°C due to its 560 °C/W junction-to-ambient thermal resistance. Its maximum power dissipation drops linearly from the rated value, ensuring safe operation up to 150°C junction temperature. This derating applies during sustained surge conditions-not transient ESD pulses-and is critical when integrating the NUP45V6P5T5G near heat-generating components like PMICs or RF power amplifiers in compact handheld designs.

Can the NUP45V6P5T5G replace the older NUP45V6P5T1G in existing designs?

Yes-the NUP45V6P5T5G is a direct tape-and-reel packaging variant of the same die and specifications as the NUP45V6P5T1G, differing only in reel quantity (8,000 vs. 3,000 units) and Pb-free marking. Electrical parameters, thermal ratings, pinout, and SOT-953 mechanical dimensions are identical. No layout or schematic changes are needed when migrating from NUP45V6P5T1G to NUP45V6P5T5G, and both share the same onsemi datasheet (NUP45V6P5/D, Rev. 5).

How does the 13–17 pF capacitance of the NUP45V6P5T5G impact high-speed signal integrity?

The NUP45V6P5T5G's typical 13–17 pF capacitance at 0 V bias introduces negligible loading on signals up to 480 Mbps (USB 2.0), with measured eye diagram degradation <5% in controlled impedance traces. At 3 V bias, capacitance drops further-ensuring minimal rise-time slowdown on 24 MHz SPI or I²S interfaces. This low-C design prevents intersymbol interference and maintains timing margins essential for error-free communication in portable electronics.