onsemi NUP46V8P5T5G

Overview

NUP46V8P5T5G from onsemi is a quad unidirectional ESD protection diode array in SOT-953 package, rated for 4.3 V working peak reverse voltage, 6.47–6.8 V breakdown voltage at 1 mA, and 10 W peak pulse power (8/20 µs). It delivers low capacitance (12 pF typical @ 0 V), <1 µA leakage @ 3 V, and IEC 61000-4-2 Level 4 ESD protection for high-speed data lines in space-constrained portable electronics.

For engineers reviewing the NUP46V8P5T5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 12 V at 1 A IPP, sub-15 pF capacitance at 3 V bias, unidirectional configuration per channel, SOT-953 footprint compatibility, and compliance with IEC 61000-4-2 Class 4 (±15 kV air / ±8 kV contact).

Technical Context

The NUP46V8P5T5G integrates four independent unidirectional Zener-based ESD clamps in a single monolithic silicon die, each configured as a cathode-anode pair to ground. Its architecture enables fast transient response (<1 ns typical turn-on) and low clamping voltage (VC ≤ 12 V @ IPP = 1 A) while maintaining <1 µA reverse leakage at VRWM = 4.3 V.

Designed for bidirectional signal line protection without series resistance, it operates within −55 °C to +150 °C junction temperature range and supports reflow soldering up to 260 °C for 10 seconds. Thermal resistance R_JA is 560 °C/W, limiting continuous power dissipation to <18 mW at TA = 25 °C.

Key Specifications

Pinout & Package

SOT-953 is a 5-pin, 1.00 mm × 0.80 mm surface-mount plastic package with exposed pad (no thermal pad connection required), optimized for automated placement and reflow. Pin 1 is marked with dot; device orientation follows JEDEC MO-252 standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD5Z3.3T5G and CM1224-04SO, the NUP46V8P5T5G uniquely balances ultra-compact SOT-953 size, 4.3 V VRWM for 3.3 V rail compatibility, and 12 pF capacitance-making it optimal for high-density USB/microSD layouts where both space and signal integrity are critical.

Availability

NUP46V8P5T5G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, microSD card slot hardening, and UART/I²C debug port safeguarding requiring stable component supply across consumer electronics, industrial handhelds, and medical portable devices.

Supply support for NUP46V8P5T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NUP46V8P5T5G belongs to onsemi's ESD protection portfolio designed specifically for high-speed, low-voltage I/O line hardening in space-constrained portable electronics with strict EMI and signal integrity requirements.

FAQ

What is the maximum clamping voltage of the NUP46V8P5T5G under IEC 61000-4-2 surge conditions?

The NUP46V8P5T5G clamps to ≤12 V at 1 A peak pulse current (I_PP), measured per IEC 61000-4-2 8/20 µs waveform. This value is guaranteed across −55 °C to +125 °C operating temperature and ensures protected ICs (e.g., USB PHYs) remain within safe absolute maximum ratings during ±8 kV contact discharge events. The NUP46V8P5T5G achieves this via low-impedance Zener avalanche structure with minimal parasitic inductance.

Can the NUP46V8P5T5G protect bidirectional data lines like I²C without additional components?

No-the NUP46V8P5T5G is unidirectional and only protects signals referenced to ground. For true bidirectional lines such as I²C SDA/SCL, two NUP46V8P5T5G devices per line (anode-to-signal and cathode-to-signal) or a dedicated bidirectional array like ESD7L5.0DT5G is required. Using NUP46V8P5T5G alone on I²C would block negative-going pulses and distort logic-low levels below 0 V.

What is the thermal derating behavior of the NUP46V8P5T5G above 25 °C ambient?

The NUP46V8P5T5G has a thermal resistance R_JA of 560 °C/W and requires linear derating above 25 °C: power dissipation must decrease by 4.5 mW per °C rise. At 70 °C ambient, maximum continuous power drops to ~18 mW. This derating applies only to steady-state conditions-not transient surges, which are limited by junction temperature (T_Jmax = 150 °C) and pulse duration.

How does the capacitance of the NUP46V8P5T5G change with applied bias voltage?

Capacitance decreases with increasing reverse bias: 12 pF typical at 0 V, dropping to 6.7 pF typical at 3 V (per datasheet Table on page 2). This voltage-dependent behavior results from depletion region widening in the Zener junction. Designers must use the 3 V bias value when evaluating high-speed signal integrity for 3.3 V I/O rails, as it reflects real operating conditions more accurately than 0 V measurements.

Is the NUP46V8P5T5G compatible with lead-free reflow profiles per JEDEC J-STD-020?

Yes-the NUP46V8P5T5G is qualified for Pb-free reflow with peak temperature up to 260 °C for 10 seconds, meeting JEDEC J-STD-020 MSL Level 1 (unlimited floor life at ≤30 °C/85% RH). Its SOT-953 package uses matte tin plating and passes thermal cycling (−65 °C to +150 °C, 1000 cycles) and drop testing per IPC-9701, confirming robustness in automated assembly.