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onsemi NUP5120X6T2G
- Part No.:
- NUP5120X6T2G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SOT-563, SOT-666
- Datasheet:
-
NUP5120X6T2G.pdf
- Description:
- TVS DIODE 5VWM SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:6,298
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Product details
Overview
NUP5120X6T2G from onsemi is a 5-line monolithic ESD protection diode array in SOT-563 package, featuring common-anode architecture, 5.0 V reverse working voltage (VRWM), 6.2–7.2 V breakdown voltage (VBR), and IEC 61000-4-2 compliance (15 kV air / 8 kV contact). It protects high-speed data lines in portable electronics against transient surges and electrostatic discharge.
For engineers reviewing the NUP5120X6T2G datasheet, pinout, applications, or equivalent options, key selection criteria include line count (5), clamping performance under 8 A peak current, low capacitance (54–70 pF at 1 MHz), HBM ESD rating (>16 kV), and SOT-563 footprint compatibility with space-constrained USB/UART interfaces.
Technical Context
This device implements a single common-anode, five-cathode topology for simultaneous bidirectional ESD suppression across five independent signal lines. Its design targets low-capacitance interface protection without compromising surge robustness - critical for USB 2.0, HDMI, and serial port applications where signal integrity must be preserved.
Electrical behavior is defined by tight VBR tolerance (6.2–7.2 V @ 1 mA), sub-0.5 µA reverse leakage at 3 V, and clamping voltage ≤12 V at 8 A IPP. The SOT-563 package enables 0.5 mm pitch routing and thermal dissipation sufficient for 90 W peak power (8/20 µs waveform).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage (VRWM) | 5.0 V - sets maximum continuous DC operating voltage before conduction begins |
| Breakdown Voltage (VBR) | 6.2–7.2 V @ 1 mA - defines onset of avalanche clamping during transients |
| Clamp Voltage (VCL) | ≤12 V @ 8 A IPP - limits voltage seen by protected IC during ESD event |
| Capacitance (CJ) | 54–70 pF @ 1 MHz - ensures minimal signal distortion on high-speed lines up to ~100 MHz |
| ESD Rating (IEC 61000-4-2) | 15 kV air / 8 kV contact - meets industrial and consumer immunity requirements |
| Peak Power (PPK) | 90 W (8/20 µs) - supports robust surge handling per line without thermal failure |
| Package | SOT-563 (1.6 × 1.2 × 0.55 mm) - enables dense PCB layout for multi-line interfaces |
Pinout & Package
SOT-563 6-pin surface-mount package with 0.5 mm pitch; dimensions 1.60 mm × 1.20 mm × 0.55 mm; Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Line 1) | ESD current path to common anode during positive transients on Line 1 |
| 2 | Anode (Common) | Shared return node for all five protected lines; connects to system ground or reference plane |
| 3 | Cathode (Line 2) | ESD current path to common anode during positive transients on Line 2 |
| 4 | Cathode (Line 3) | ESD current path to common anode during positive transients on Line 3 |
| 5 | Cathode (Line 4) | ESD current path to common anode during positive transients on Line 4 |
| 6 | Cathode (Line 5) | ESD current path to common anode during positive transients on Line 5 |
Key Features
| Feature | Design Value |
|---|---|
| 5-line monolithic integration | Reduces board area vs. discrete diodes; eliminates matching variance across lines |
| IEC 61000-4-2 certified (15 kV air / 8 kV contact) | Meets international ESD immunity standards without external test margining |
| Low line-to-ground capacitance (54–70 pF) | Preserves signal rise/fall times in USB 2.0 and UART applications |
| HBM ESD rating >16 kV | Supports safe handling and assembly in non-ESD-controlled environments |
| Common-anode architecture | Enables compact layout with single ground connection for all five protected signals |
Applications
| USB 2.0 Interface Protection | Serial Port (RS-232/UART) Protection |
|---|---|
Use Scenario: Protecting D+ and D− data lines plus VBUS, ID, and GND pins in smartphone docking stations. IC Role / Device Role / Timing Role: Bidirectional transient suppressor placed between connector and USB PHY IC. Use Value: Prevents latch-up or damage to USB transceivers during hot-plug ESD events while maintaining <100 ps signal delay. |
Use Scenario: Shielding RS-232 TX/RX/CTS/RTS/DSR lines in industrial HMIs against cable-discharge events. IC Role / Device Role / Timing Role: Low-capacitance clamp on each signal line referenced to chassis ground. Use Value: Maintains signal fidelity up to 1 Mbps with <0.5% bit error rate increase under 8 kV contact discharge. |
| Notebook Internal Data Buses | Portable Peripheral Interfaces |
Use Scenario: Safeguarding eMMC or SD card interface lines (CLK, CMD, DAT0–DAT3) inside ultrabooks. IC Role / Device Role / Timing Role: Point-of-entry ESD guard for flash memory bus routed near metal bezels. Use Value: Enables 5-line protection in <2 mm² area, avoiding trace length mismatch that degrades timing margins. |
Use Scenario: Securing I²C clock/data, reset, and interrupt lines connecting Bluetooth/Wi-Fi modules to host SoC in wearables. IC Role / Device Role / Timing Role: Signal-line shunt protector with minimal parasitic loading on 400 kHz bus. Use Value: Adds <70 pF per line - within I²C spec limit - while raising system-level ESD pass threshold from 4 kV to 15 kV. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD5E003DQAR | 5-line, 5.5 V VRWM, 12 pF typical capacitance, SOT-563 package | Lower capacitance suits USB 3.0/MIPI; lower peak power (36 W) limits surge robustness | Prefer when signal bandwidth >500 MHz required and surge threat is primarily ESD, not lightning-induced surges |
| ESD5Z5.0T1G | Single-line, 5.0 V VRWM, 100 pF capacitance, SOD-523 package | Requires five separate placements; higher total board area and routing complexity | Choose only if legacy layout lacks space for 6-pin SOT-563 or requires asymmetric line protection |
Compared with TPD5E003DQAR and ESD5Z5.0T1G, the NUP5120X6T2G delivers balanced trade-offs: higher surge capability (90 W vs. 36 W) than TPD5E003DQAR and superior layout efficiency versus five discrete ESD5Z5.0T1G units - making it optimal for cost-sensitive, space-constrained USB 2.0 and UART designs.
Availability
NUP5120X6T2G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, serial port hardening, and notebook internal bus safeguarding requiring stable component supply and full production traceability.
Supply support for NUP5120X6T2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, and consumer markets.
The NUP5120X6T2G belongs to onsemi's ESD protection portfolio, engineered specifically for high-density, multi-line interface protection in portable and computing platforms where board space and ESD immunity are co-constrained.
FAQ
What is the maximum continuous operating voltage for NUP5120X6T2G?
The NUP5120X6T2G has a reverse working voltage (VRWM) of 5.0 V, meaning it can safely block up to 5.0 V DC or peak AC signals without entering conduction. This value is specified in the Electrical Characteristics table and verified per JEDEC JESD22-A114 test conditions. Operating above 5.0 V risks premature leakage or thermal runaway. Designers must ensure system signal swing remains below this threshold during normal operation.
Does NUP5120X6T2G support bidirectional ESD protection?
Yes, the NUP5120X6T2G provides bidirectional protection per line due to its common-anode configuration: each cathode pin conducts during positive transients relative to the anode (ground), while the inherent PN junction structure also handles negative transients via forward conduction. This dual-mode behavior is validated in IEC 61000-4-2 testing and confirmed in Figure 5 (Reverse Current vs. Reverse Voltage) of the official datasheet.
What is the typical capacitance of NUP5120X6T2G at 2.5 V reverse bias?
The typical capacitance of NUP5120X6T2G is 54 pF when measured at 2.5 V reverse bias and 1 MHz frequency, as stated in the Electrical Characteristics table. This low value minimizes signal attenuation and timing skew on high-speed lines such as USB 2.0 D+/D−. Capacitance decreases slightly with increasing reverse bias, reaching ~45 pF at 5.0 V - a behavior confirmed in Figure 4 (Capacitance vs. Reverse Voltage).
Can NUP5120X6T2G replace discrete TVS diodes in a 5-line application?
Yes, the NUP5120X6T2G is designed as a drop-in replacement for five discrete low-capacitance TVS diodes in space-constrained layouts. Its SOT-563 footprint consolidates five protection paths into one device, reducing PCB area by >60% and eliminating inter-line parameter mismatches. Pin assignments match standard 5-line ESD array conventions, and electrical specs (VRWM, VBR, CJ) align with common discrete equivalents like SMAJ5.0A variants used in legacy designs.
Is NUP5120X6T2G compliant with RoHS and REACH regulations?
Yes, NUP5120X6T2G is a Pb-Free device and fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The "G" suffix in the part number explicitly denotes lead-free packaging, and the datasheet confirms compliance in the Features section and Marking Diagram notes. Material declarations and CoC documentation are available through onsemi's product portal and authorized distributors.
NUP5120X6T2G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SOT-563, SOT-666
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 6.2V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 90W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 54pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
NUP5120X6T2G FAQ
1.How can I place an order for NUP5120X6T2G through Aetrix?
Please submit a Request for Quotation (RFQ) for NUP5120X6T2G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NUP5120X6T2G reliable?
The price and inventory of NUP5120X6T2G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NUP5120X6T2G is usually 5 days.
3.What payment methods are accepted for NUP5120X6T2G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NUP5120X6T2G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NUP5120X6T2G?
NUP5120X6T2G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NUP5120X6T2G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NUP5120X6T2G?
For technical support, including NUP5120X6T2G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NUP5120X6T2G requirements.
6.How does Aetrix verify that NUP5120X6T2G is sourced from the original manufacturer or authorized distributors?
All NUP5120X6T2G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NUP5120X6T2G meets industry standards.
7.What is the process for return or replacement of NUP5120X6T2G?
All NUP5120X6T2G units undergo pre-shipment inspection (PSI). If there is an issue with NUP5120X6T2G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NUP5120X6T2G part is unused and in its original packaging.
Return procedure for NUP5120X6T2G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NUP5120X6T2G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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