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onsemi NUP5150MUTBG
- Part No.:
- NUP5150MUTBG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-UFDFN
- Datasheet:
-
NUP5150MUTBG.pdf
- Description:
- TVS DIODE 5VWM 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,075
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Product details
Overview
NUP5150MUTBG from onsemi is a 5-line ESD protection diode array in a UDFN6 package, featuring monolithic common-anode architecture with 5.0 V reverse working voltage, 6.2–7.2 V breakdown voltage, ≤15 pF line-to-GND capacitance, and IEC 61000-4-2 ±8 kV contact ESD rating - deployed for USB, HDMI, and SD card interface protection in portable electronics.
For engineers reviewing the NUP5150MUTBG datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM ≥5.0 V, low 12–15 pF signal-line capacitance, HBM >16 kV robustness, and UDFN6 footprint compatibility with high-density PCB layouts.
Technical Context
The NUP5150MUTBG integrates five unidirectional ESD protection diodes sharing a common anode tied to ground, enabling simultaneous clamping of five independent signal lines during transient events. Its monolithic silicon design ensures matched electrical characteristics across all channels and eliminates inter-device variation.
It operates within −40°C to +125°C junction temperature range and supports reflow soldering up to 260°C (10 s), meeting Pb-free assembly requirements. The device is not intended for DC power rail protection but optimized for high-speed data lines where low capacitance and fast response are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage (VRWM) | 5.0 V - Maximum continuous DC or peak AC voltage the device can withstand without conduction; sets minimum system operating voltage margin. |
| Breakdown Voltage (VBR) | 6.2–7.2 V at IT = 1 mA - Clamping threshold onset; defines earliest point of effective transient suppression. |
| Capacitance (CJ) | 12–15 pF at 1 MHz, 0 V bias - Signal integrity impact on high-speed interfaces (e.g., USB 2.0, SDIO); low enough to avoid data eye degradation. |
| ESD Rating (IEC 61000-4-2) | ±8 kV contact discharge - Validated immunity level for end-equipment compliance with international ESD immunity standards. |
| Operating Junction Temp | −40°C to +125°C - Enables deployment in battery-powered portables and thermally constrained embedded systems. |
| Package | UDFN6 (1.20 × 1.00 × 0.50 mm, 0.40 mm pitch) - Ultra-compact footprint for space-constrained mobile PCBs with automated placement capability. |
Pinout & Package
UDFN6 package (Case 517AA), 1.20 mm × 1.00 mm × 0.50 mm body, 0.40 mm lead pitch, Pb-free, moisture sensitivity level 1 (MSL1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Line 1) | ESD clamp node for first protected signal line; connects to I/O trace before connector. |
| 2 | Anode (Common) | Shared cathode return path tied to system ground plane; must be low-inductance connection. |
| 3 | Cathode (Line 2) | ESD clamp node for second protected signal line; electrically isolated from other cathodes. |
| 4 | Cathode (Line 3) | ESD clamp node for third protected signal line; maintains channel independence under multi-line transients. |
| 5 | Cathode (Line 4) | ESD clamp node for fourth protected signal line; identical electrical behavior to Pins 1/3/4/6. |
| 6 | Cathode (Line 5) | ESD clamp node for fifth protected signal line; enables full 5-line protection without discrete devices. |
Key Features
| Feature | Design Value |
|---|---|
| 5-line monolithic integration | Replaces five discrete TVS diodes, reducing BOM count, PCB area, and layout complexity in multi-signal interfaces. |
| IEC 61000-4-2 ±8 kV contact rating | Meets Level 4 ESD immunity requirement for consumer and industrial end equipment without external circuitry. |
| 12–15 pF line-to-GND capacitance | Preserves signal rise/fall times on 480 Mbps USB 2.0 and 104 MHz SDIO buses without measurable jitter or attenuation. |
| Common-anode grounded configuration | Enables bidirectional clamping action on each line using single ground reference - simplifies routing and grounding strategy. |
| Pb-free UDFN6 package | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for automated SMT assembly. |
Applications
| USB 2.0 Interface Protection | HDMI DDC/CEC Line Protection |
|---|---|
Use Scenario: Protecting differential USB 2.0 data lines (D+, D−), VBUS sense, ID, and USB OTG control signals against ESD events during cable insertion. IC Role / Device Role: Unidirectional ESD clamp array providing low-capacitance, fast-response surge suppression on five independent signal paths. Use Value: Prevents latch-up and permanent damage to USB PHY ICs while maintaining <1% signal distortion at 480 Mbps. | Use Scenario: Safeguarding HDMI Display Data Channel (DDC) clock/data and Consumer Electronics Control (CEC) bus lines exposed to user-accessible ports. IC Role / Device Role: Common-anode ESD suppressor ensuring simultaneous clamping of three low-voltage I²C-compatible signals without cross-talk. Use Value: Maintains I²C timing integrity (100 kHz/400 kHz) with sub-15 pF loading and survives repeated ±8 kV contact discharges per IEC standard. |
| SD Card Interface Protection | Mobile Keypad/Touch Panel I/O Protection |
Use Scenario: Shielding SDIO command, clock, data0–data3, and card-detect lines in smartphones and tablets from ESD during hot-plug operations. IC Role / Device Role: Five-channel transient voltage suppressor optimized for 3.3 V logic-level SD 3.0/4.0 buses with tight capacitance tolerance. Use Value: Enables reliable 104 MB/s transfer rates by limiting line capacitance to ≤15 pF and clamping transients below 7.2 V. | Use Scenario: Protecting mechanical keypad scan lines or capacitive touch controller I/O pins in handheld medical or industrial devices subjected to frequent operator contact. IC Role / Device Role: Compact ESD array delivering uniform clamping performance across five independent low-current digital inputs. Use Value: Eliminates false keypresses and touch misreads caused by ESD-induced glitches, validated to >16 kV HBM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E001DRYR | 4-channel, 10 pF typical capacitance, 5.5 V VRWM, same UDFN6 package | Lacks fifth channel; requires supplemental protection for 5-line interfaces like SDIO | Select when only four lines need protection and lower capacitance is prioritized over channel count. |
| SZESD9101MUTAG | Single-channel, 12 pF, 5.0 V VRWM, SOD-923 package | Requires five discrete placements; increases PCB area and assembly cost vs. monolithic solution | Choose only if board layout constraints prevent UDFN6 use or if channel-specific biasing is required. |
Compared with TPD4E001DRYR and SZESD9101MUTAG, the NUP5150MUTBG uniquely delivers five-channel ESD protection in one UDFN6 footprint with verified ±8 kV IEC 61000-4-2 performance - making it optimal for space-constrained, multi-signal interfaces where channel count and layout efficiency are decisive.
Availability
NUP5150MUTBG is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI DDC/CEC line safeguarding, and SD card interface shielding requiring stable component supply and long-term production continuity.
Supply support for NUP5150MUTBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.
The NUP5150MUTBG belongs to onsemi's ESD protection portfolio, engineered specifically for high-density portable electronics requiring ultra-low capacitance, multi-line transient suppression in minimal PCB area.
FAQ
What is the maximum operating temperature for the NUP5150MUTBG?
The NUP5150MUTBG has a specified operating junction temperature range of −40°C to +125°C. This allows reliable operation in demanding environments such as inside sealed portable enclosures or near heat-generating components. Thermal derating is not required within this range, and the device maintains its 5.0 V VRWM and ±8 kV ESD performance across the full span. The NUP5150MUTBG's thermal performance is validated per JEDEC JESD51 standards.
Does the NUP5150MUTBG support bidirectional signal lines like USB D+ and D−?
Yes - the NUP5150MUTBG uses a common-anode configuration where all five cathodes connect to signal lines and the shared anode connects to ground. This enables bidirectional clamping: positive transients are shunted to ground via forward conduction, and negative transients are blocked until reaching the reverse breakdown threshold (~6.2–7.2 V). Thus, the NUP5150MUTBG protects AC-coupled or differential lines such as USB 2.0 D+/D− without polarity restrictions.
Can the NUP5150MUTBG replace discrete 5.0 V Zener diodes in ESD protection circuits?
No - the NUP5150MUTBG is not a Zener diode replacement. It is a purpose-built ESD suppressor with tightly controlled dynamic impedance, low capacitance, and fast response (<1 ns), unlike general-purpose Zeners which exhibit higher leakage, slower turn-on, and no IEC 61000-4-2 certification. Using discrete Zeners would compromise signal integrity and fail compliance testing. The NUP5150MUTBG provides guaranteed performance where discrete solutions cannot.
Is the NUP5150MUTBG compatible with lead-free reflow profiles?
Yes - the NUP5150MUTBG is Pb-free and qualified for standard lead-free reflow soldering with a maximum peak temperature of 260°C for 10 seconds, per JEDEC J-STD-020. Its UDFN6 package meets IPC/JEDEC G-104 moisture sensitivity level 1 (MSL1), meaning it can be stored indefinitely at ≤30°C/60% RH without baking. This ensures robust manufacturability in high-volume SMT lines handling the NUP5150MUTBG.
How does the capacitance of the NUP5150MUTBG affect USB 2.0 signal integrity?
The NUP5150MUTBG's 12–15 pF line-to-GND capacitance introduces negligible loading on USB 2.0 signals: simulations and lab measurements confirm <0.5% eye diagram closure and no measurable jitter increase at 480 Mbps. Its low capacitance preserves signal edge rates and impedance matching, unlike higher-capacitance arrays (>20 pF) that cause intersymbol interference. For full-speed USB 2.0 designs, the NUP5150MUTBG maintains compliance with USB-IF eye mask requirements - a key reason it's selected for certified portable devices.
NUP5150MUTBG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-UFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 6.2V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 12pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-UDFN (1.2x1)
NUP5150MUTBG FAQ
1.How can I place an order for NUP5150MUTBG through Aetrix?
Please submit a Request for Quotation (RFQ) for NUP5150MUTBG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NUP5150MUTBG reliable?
The price and inventory of NUP5150MUTBG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NUP5150MUTBG is usually 5 days.
3.What payment methods are accepted for NUP5150MUTBG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NUP5150MUTBG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NUP5150MUTBG?
NUP5150MUTBG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NUP5150MUTBG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NUP5150MUTBG?
For technical support, including NUP5150MUTBG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NUP5150MUTBG requirements.
6.How does Aetrix verify that NUP5150MUTBG is sourced from the original manufacturer or authorized distributors?
All NUP5150MUTBG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NUP5150MUTBG meets industry standards.
7.What is the process for return or replacement of NUP5150MUTBG?
All NUP5150MUTBG units undergo pre-shipment inspection (PSI). If there is an issue with NUP5150MUTBG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NUP5150MUTBG part is unused and in its original packaging.
Return procedure for NUP5150MUTBG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NUP5150MUTBG Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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