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onsemi NUP6012PMUTAG
- Part No.:
- NUP6012PMUTAG
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
NUP6012PMUTAG.pdf
- Description:
- TVS DIODE 4VWM 6UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,796
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Product details
Overview
NUP6012PMUTAG from onsemi is a six-line unidirectional transient voltage suppressor array designed for ESD protection of high-speed data lines, featuring 0.7 pF typical capacitance, 4.0 V working peak reverse voltage (VRWM), and 5.2 V minimum breakdown voltage (VBR) across all six channels, commonly deployed in USB 2.0 interfaces and mobile SIM card circuits.
For engineers reviewing the NUP6012PMUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low capacitance for signal integrity, IEC61000-4-2 Level 4 (14 kV contact) ESD rating, common-anode UDFN6 package compatibility, and clamping performance under 8 kV ESD pulses.
Technical Context
The NUP6012PMUTAG implements a common-anode, six-channel unidirectional TVS architecture with each diode connected between an I/O line and GND, enabling simultaneous protection of independent high-speed signals without inter-channel coupling. Its design targets systems where board space and capacitive loading are critical constraints.
It operates within −40°C to +125°C junction temperature range, supports 1 mA test current for VBR verification, and maintains ≤1.0 µA reverse leakage at VRWM - ensuring minimal impact on signal DC bias and power consumption in battery-powered portable devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance | 0.7 pF typical per channel at 0 V, 1 MHz - preserves signal integrity up to USB 2.0 (480 Mbps) data rates |
| VRWM | 4.0 V maximum - matches standard 3.3 V I/O rail operating margins with safety headroom |
| VBR (min) | 5.2 V at IT = 1 mA - ensures reliable conduction onset before damage to protected ICs |
| ESD Rating | IEC61000-4-2 Level 4 contact: ±14 kV - meets industrial and consumer end-equipment immunity requirements |
| Package | UDFN6, 1.6 × 1.6 × 0.5 mm - enables placement adjacent to connectors or high-density BGA footprints |
| Leakage Current | ≤1.0 µA at VRWM - avoids measurable current draw in always-on mobile standby modes |
Pinout & Package
Package: UDFN6 (Case 517AP), 1.6 mm × 1.6 mm × 0.5 mm profile, Pb-free, with exposed thermal pad. Pin 1 marked by microdot or "G" indicator; pin 6 is common anode (GND).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | D1 Cathode | Protected I/O line 1 - connects to high-speed trace (e.g., USB D+) |
| 2 | D2 Cathode | Protected I/O line 2 - e.g., USB D− or SIM CLK |
| 3 | D3 Cathode | Protected I/O line 3 - e.g., SIM I/O or MP3 player audio data |
| 4 | D4 Cathode | Protected I/O line 4 - e.g., SIM RST or auxiliary control line |
| 5 | D5 Cathode | Protected I/O line 5 - e.g., antenna switch control or sensor interface |
| 6 | Common Anode (GND) | Shared cathode return path - must be low-inductance connection to system ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.7 pF typical per channel - eliminates signal distortion and timing skew in >100 MHz digital interfaces |
| Six-line integration | Single UDFN6 package replaces six discrete 0402 TVS diodes - reduces PCB area by >60% and assembly cost |
| IEC61000-4-2 Level 4 compliance | ±14 kV contact discharge - satisfies EN 55032/55035 and FCC Part 15 Class B immunity requirements |
| Low-profile construction | 0.5 mm max height - enables use in ultra-slim smartphones, wearables, and compact IoT modules |
Applications
| USB 2.0 High-Speed Interface | Cell Phone Front-End Protection |
|---|---|
Use Scenario: Protecting D+/D− differential pair and ID/VBUS lines in smartphone USB OTG ports against repeated ESD events during cable insertion. IC Role / Device Role / Timing Role: Unidirectional clamping TVS array placed immediately adjacent to USB connector, with common anode tied to clean local ground. Use Value: 0.7 pF capacitance prevents eye diagram closure at 480 Mbps; 5.2 V VBR ensures no false triggering during 3.3 V logic swings. | Use Scenario: Shielding SIM card interface lines (CLK, I/O, RST, VCC) from ESD during hot-swap insertion in dual-SIM handsets. IC Role / Device Role / Timing Role: Six-channel ESD protector with shared GND terminal, minimizing routing congestion near SIM socket. Use Value: Sub-1 µA leakage preserves battery life in always-connected standby mode; UDFN6 footprint fits tight spacing between SIM tray and mainboard edge. |
| MP3 Player Audio Data Lines | SIM Card Protection |
Use Scenario: Guarding I²S or SPI data lines connecting audio codec to flash memory in portable media players. IC Role / Device Role / Timing Role: Low-capacitance TVS array placed at source-side of high-speed serial bus to prevent ESD-induced latch-up in sensitive analog front-end. Use Value: Clamping voltage <12 V at 1 A IPP ensures downstream logic remains within safe SOA during 8 kV contact discharge. | Use Scenario: Securing four dedicated SIM interface pins plus two auxiliary lines (e.g., VCC detect, presence sense) in LTE modem modules. IC Role / Device Role / Timing Role: Single-component solution providing coordinated protection across all SIM-related signals with matched electrical characteristics. Use Value: Identical VBR (5.2 V min) and C (0.7 pF typ) across all six channels guarantee uniform signal delay and impedance matching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5V3U4-2/TR | 0.5 pF typical capacitance; 5.3 V VBR; SOT-23-6 package (3.0 × 1.75 × 1.3 mm) | Larger footprint and 0.8 mm height limit use in ultra-thin designs; lower VBR may trigger prematurely on 3.3 V rails with ripple | Prefer when higher clamping margin or legacy SMT process compatibility is required over size constraint |
| TPD6E001DRPR | 0.5 pF typical; 5.5 V VBR; 6-pin SON (1.45 × 1.0 × 0.5 mm); integrated ESD diode + RC filter option | Smaller body but non-standard 0.5 mm pitch; lacks common-anode configuration - requires individual GND connections | Select when board layout allows separate grounding or when combined RC filtering is needed for noise suppression |
Compared with ESD5V3U4-2/TR and TPD6E001DRPR, the NUP6012PMUTAG delivers optimal balance of ultra-low capacitance, strict VBR consistency across all six lines, and true common-anode topology - making it uniquely suited for space-constrained, multi-line I/O protection where ground routing simplicity and signal fidelity are critical.
Availability
NUP6012PMUTAG is available at Aetrix Electronics and suitable for USB 2.0 interface protection, mobile SIM card circuits, and portable audio data line shielding requiring stable component supply and long-term production continuity.
Supply support for NUP6012PMUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and consumer electronics.
The NUP6012PMUTAG belongs to onsemi's transient voltage suppressor array product line, engineered specifically for ultra-low-capacitance ESD protection in high-speed portable interfaces where PCB real estate and signal integrity are tightly constrained.
FAQ
What is the maximum clamping voltage of the NUP6012PMUTAG under 1 A peak pulse current?
The NUP6012PMUTAG exhibits a maximum clamping voltage (VC) of 12 V at IPP = 1 A, as specified in the Electrical Characteristics table. This value ensures downstream components remain within safe operating limits during transient events. The clamping behavior is validated per IEC61000-4-2 testing methodology, and the NUP6012PMUTAG maintains this performance across its full operating temperature range of −40°C to +125°C.
Is the NUP6012PMUTAG compatible with lead-free reflow soldering processes?
Yes, the NUP6012PMUTAG is Pb-free and qualified for standard lead-free reflow profiles, including peak temperatures up to 260°C for 10 seconds. Its UDFN6 package (Case 517AP) is designed for compatibility with IPC-J-STD-020 moisture sensitivity level 1 handling. The NUP6012PMUTAG's thermal performance and solder wetting characteristics have been verified per onsemi's Soldering and Mounting Techniques Reference Manual.
Does the NUP6012PMUTAG provide bidirectional or unidirectional ESD protection?
The NUP6012PMUTAG provides unidirectional ESD protection, configured as six cathode-to-I/O, common-anode-to-GND diodes. It is intended for protecting signals referenced to ground with positive-going transients. For applications requiring bidirectional protection (e.g., AC-coupled lines), external series resistors or alternate device families like the NUP4106 must be considered. The NUP6012PMUTAG's unidirectional architecture directly supports its 4.0 V VRWM and 5.2 V VBR specifications.
Can the NUP6012PMUTAG be used to protect HDMI or MIPI D-PHY lines?
No - the NUP6012PMUTAG is not recommended for HDMI or MIPI D-PHY protection. While its 0.7 pF capacitance meets basic high-speed requirements, its 4.0 V VRWM and 5.2 V VBR are incompatible with HDMI's 3.3 V nominal swing and MIPI D-PHY's 1.2 V differential signaling. These interfaces require lower VBR (e.g., ≤3.3 V) and tighter capacitance matching. The NUP6012PMUTAG is optimized for 3.3 V single-ended buses such as USB 2.0 and SIM card interfaces.
How is the common anode connection implemented in the NUP6012PMUTAG UDFN6 package?
In the NUP6012PMUTAG, Pin 6 is the common anode terminal, internally bonded to the exposed thermal pad and electrically connected to all six diode anodes. This configuration requires direct soldering of the exposed pad to a solid ground plane for optimal thermal dissipation and low-inductance ESD current return. The NUP6012PMUTAG's pinout places the common anode at the corner opposite Pin 1 (D1 cathode), simplifying PCB escape routing in dense layouts.
NUP6012PMUTAG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-UFDFN Exposed Pad
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 6
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 4V (Max)
- Voltage - Breakdown (Min):
- 5.2V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.7pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-UDFN (1.6x1.6)
NUP6012PMUTAG FAQ
1.How can I place an order for NUP6012PMUTAG through Aetrix?
Please submit a Request for Quotation (RFQ) for NUP6012PMUTAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NUP6012PMUTAG reliable?
The price and inventory of NUP6012PMUTAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NUP6012PMUTAG is usually 5 days.
3.What payment methods are accepted for NUP6012PMUTAG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NUP6012PMUTAG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NUP6012PMUTAG?
NUP6012PMUTAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NUP6012PMUTAG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NUP6012PMUTAG?
For technical support, including NUP6012PMUTAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NUP6012PMUTAG requirements.
6.How does Aetrix verify that NUP6012PMUTAG is sourced from the original manufacturer or authorized distributors?
All NUP6012PMUTAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NUP6012PMUTAG meets industry standards.
7.What is the process for return or replacement of NUP6012PMUTAG?
All NUP6012PMUTAG units undergo pre-shipment inspection (PSI). If there is an issue with NUP6012PMUTAG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NUP6012PMUTAG part is unused and in its original packaging.
Return procedure for NUP6012PMUTAG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NUP6012PMUTAG Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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