onsemi NUP8010MNT1G

Overview

NUP8010MNT1G from onsemi is an 8-channel low-capacitance transient voltage suppressor (TVS) array designed for bidirectional ESD protection of high-speed data lines. It delivers 5.6 V typical breakdown voltage, 13 pF capacitance at 3.0 V reverse bias, 13 V clamping voltage at 1.6 A peak pulse current, and meets IEC61000-4-2 ±15 kV air / ±8 kV contact discharge standards - deployed in notebook computers, LCD displays, and wireless handsets.

For engineers reviewing the NUP8010MNT1G datasheet, pinout, applications, or equivalent options, key selection criteria include channel count (8), low-line capacitance (<11.5 pF @ 3 V), ground-referenced DFN8 layout, clamping performance under 8×20 µs transients, and Pb-free compliance for space-constrained portable electronics.

Technical Context

This TVS array integrates eight identical unidirectional protection cells sharing a common cathode tied to Pin 1 (GND), enabling compact line-to-ground suppression without external routing. Each channel features a silicon avalanche diode structure with 5.3–5.9 V breakdown tolerance and sub-1 µA leakage at 3.3 V.

The device operates across –40°C to +85°C ambient, derates linearly above 25°C per Figure 2, and sustains non-repetitive 20 W peak power (8×20 µs waveform). Its 1.6×1.6 mm DFN8 package (Case 506AK) supports automated placement and reflow soldering with MSL1 rating.

Key Specifications

Pinout & Package

Package: DFN8 (1.6 mm × 1.6 mm × 0.9 mm, 0.4 mm pitch, Case 506AK, MSL1, Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SZ1.5SMC8.2A and TPD8E003DBVR, the NUP8010MNT1G offers superior board-space efficiency (1.6×1.6 mm vs. 8×DO-214AB or 2.9×1.6 mm), lower leakage, and tighter capacitance control - critical for high-density portable designs where trace length and parasitic loading directly impact signal fidelity.

Availability

NUP8010MNT1G is available at Aetrix Electronics and suitable for notebook computers, LCD displays, and wireless handsets requiring stable component supply with full Pb-free compliance and MSL1 moisture sensitivity handling.

Supply support for NUP8010MNT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and portable electronics.

The NUP8010MNT1G belongs to onsemi's transient protection portfolio, engineered specifically for high-density, low-capacitance ESD safeguarding of high-speed serial interfaces in space-constrained mobile and computing platforms.

FAQ

What is the maximum clamping voltage of the NUP8010MNT1G under IEC61000-4-2 ESD stress?

The NUP8010MNT1G clamps to a maximum of 13 V at 1.6 A peak pulse current (8×20 µs waveform), as specified in its Electrical Characteristics table. This value ensures protected ICs remain within safe operating voltage limits during standardized ESD events. The NUP8010MNT1G achieves this with low dynamic impedance and fast response time inherent to its silicon avalanche structure.

Does the NUP8010MNT1G support bidirectional or unidirectional ESD protection?

The NUP8010MNT1G provides unidirectional protection per channel, with all anodes (Pins 2–8) connected to signal lines and the common cathode (Pin 1) tied to ground. It suppresses positive transients only - negative excursions beyond ground are not clamped. For true bidirectional protection, external series resistors or complementary TVS arrays are required. The NUP8010MNT1G datasheet confirms this configuration in the PIN CONNECTIONS diagram and electrical test conditions.

What is the thermal derating behavior of the NUP8010MNT1G above 25°C ambient?

The NUP8010MNT1G exhibits linear thermal derating above 25°C, dropping to 0% rated power at 125°C ambient, as shown in Figure 2 of its datasheet. At 85°C (maximum operating temperature), it retains approximately 60% of its 20 W peak power rating. This derating must be applied when calculating worst-case surge capability in thermally constrained enclosures. The NUP8010MNT1G's DFN8 package relies on PCB copper area for heat dissipation.

Can the NUP8010MNT1G be used on 5 V logic lines?

No - the NUP8010MNT1G has a 5.6 V typical breakdown voltage and 3.0 V maximum reverse working voltage (V_RWM). Applying it to a 5 V rail risks forward conduction and excessive leakage, potentially disrupting logic levels or causing bus contention. It is strictly rated for 3.3 V systems. For 5 V interfaces, select a TVS with ≥6.5 V V_RWM, such as the NUP8011MNT1G. The NUP8010MNT1G specification sheet explicitly lists 3.0 V as the VRWM limit.

Is the NUP8010MNT1G compatible with lead-free reflow profiles?

Yes - the NUP8010MNT1G is Pb-free and qualified for standard JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260°C for 10 seconds. Its DFN8 package (Case 506AK) is rated MSL1, meaning it can be stored indefinitely at ≤30°C/60% RH without baking. The "G" suffix in NUP8010MNT1G denotes Pb-free compliance, and the datasheet confirms compatibility with IPC/JEDEC standards. Always verify profile ramp rates and soak times per onsemi's application notes for the NUP8010MNT1G.