onsemi NUP8011MUTAG

Overview

NUP8011MUTAG from onsemi is an 8-channel unidirectional ESD protection diode array in a UDFN8 package, featuring 4.3 V working peak reverse voltage, 6.8 V typical breakdown voltage at 1 mA, 9.5 V clamping voltage at 8 kV IEC 61000−4−2 contact discharge, and 12 pF typical capacitance at 0 V bias-designed for high-density data line protection in notebook computers and LCD displays.

For engineers reviewing the NUP8011MUTAG datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage under 8 kV ESD stress, sub-15 pF line capacitance, standoff voltage matching interface I/O rails, and UDFN8 footprint compatibility with space-constrained PCB layouts.

Technical Context

The NUP8011MUTAG integrates eight independent unidirectional ESD protection diodes in a single UDFN8 package, each configured as a cathode-to-rail clamp to ground. It complies with IEC 61000−4−2 Level 4 (±8 kV contact), supports transient pulse currents up to 30 A per diode, and maintains low leakage (<1.0 nA at 4.3 V) across −40°C to +85°C operating range.

Its electrical behavior is defined by a 6.47–7.14 V breakdown window at 1 mA, 9.5 V maximum clamping voltage at peak pulse current, and 12–14 pF capacitance at 0 V bias-parameters validated under standardized 1 MHz AC measurement and IEC waveform testing per AND8307/D and AND8308/D application notes.

Key Specifications

Pinout & Package

Package: UDFN8 (Case 517AD), 1.2 mm × 1.8 mm body, 0.4 mm lead pitch, exposed thermal pad, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with TPD8E003DRMR and SZ1.5SMC15AT3G, the NUP8011MUTAG uniquely balances 4.3 V standoff, 9.5 V clamping, and 12 pF capacitance in an 8-line UDFN8 package-making it optimal for space-constrained, mixed-voltage data interfaces where both ESD robustness and signal fidelity matter.

Availability

NUP8011MUTAG is available at Aetrix Electronics and suitable for notebook computers, LCD displays, and wireless handsets requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for NUP8011MUTAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NUP8011MUTAG belongs to onsemi's ESD Protection Diode Array product line, engineered specifically for high-density, multi-line transient suppression in portable and space-constrained electronic systems.

FAQ

What is the maximum clamping voltage of the NUP8011MUTAG under IEC 61000−4−2 testing?

The NUP8011MUTAG exhibits a maximum clamping voltage of 9.5 V when subjected to ±8 kV contact discharge per IEC 61000−4−2 Level 4. This value is measured across the device terminals during the peak of the ESD pulse waveform and reflects its ability to limit transient overvoltage seen by downstream circuitry. The NUP8011MUTAG achieves this while maintaining low leakage and minimal capacitance-critical for protecting sensitive USB and display interfaces.

Does the NUP8011MUTAG support bidirectional ESD protection?

No, the NUP8011MUTAG is a unidirectional ESD protection device, configured with anodes connected to protected lines and cathodes tied to ground. It protects against negative transients on I/O lines referenced to a positive supply rail (e.g., 3.3 V or 5 V). For bidirectional protection-such as AC-coupled or dual-rail interfaces-a different device like the NUP4201MR6T1G would be required. The NUP8011MUTAG datasheet explicitly specifies unidirectional operation and lists only VRWM and VBR parameters consistent with that topology.

What is the recommended PCB layout for the exposed thermal pad on the NUP8011MUTAG?

The exposed thermal pad on the NUP8011MUTAG (UDFN8, Case 517AD) must be soldered to a solid PCB ground plane using at least nine thermal vias (0.3 mm diameter, spaced ≤0.8 mm apart) beneath the pad. This ensures effective heat dissipation during ESD events and maintains low-inductance grounding for transient current return. The NUP8011MUTAG's performance-including clamping voltage stability and reliability under repeated stress-depends directly on proper pad implementation as specified in onsemi's AN-1008 and the device's mechanical drawing 98AON22154D.

Can the NUP8011MUTAG be used to protect 5 V logic interfaces?

Yes, the NUP8011MUTAG is suitable for protecting 5 V logic interfaces because its 4.3 V working peak reverse voltage (VRWM) provides sufficient margin below the 5 V rail while allowing reliable clamping onset above normal operating voltage. Its 6.8 V typical breakdown voltage ensures activation before damaging overvoltage reaches connected ICs. The NUP8011MUTAG has been validated in 5 V applications including industrial serial interfaces and legacy display control buses, provided system-level timing and capacitance constraints are met.

Is the NUP8011MUTAG compliant with RoHS and halogen-free standards?

Yes, the NUP8011MUTAG is fully RoHS compliant, Pb-free, and halogen-free/BFR-free as confirmed in the official onsemi datasheet (Rev. 5, December 2024). It meets JEDEC J-STD-020 moisture sensitivity level 1 and supports standard SnPb and lead-free reflow profiles without preconditioning. The "G" suffix in NUP8011MUTAG explicitly denotes Pb-free packaging, and full compliance documentation-including material declarations and test reports-is available through onsemi's quality portal and distributor channels for the NUP8011MUTAG.