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onsemi NZ8DH33VMXWT5G
- Part No.:
- NZ8DH33VMXWT5G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 2-UDFN
- Datasheet:
-
NZ8DH33VMXWT5G.pdf
- Description:
- DUAL DIODE ZENER PROTECTION 33V
- Quantity:
- Payment:
- Shipping:
Inventory:9,831
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Product details
Overview
NZ8DH33VMXWT5G from onsemi is a bidirectional Zener protection diode designed for ESD and transient overvoltage suppression in voltage-sensitive signal lines. It features a working peak reverse voltage of 33 V, clamping voltage of 37.3 V at 1.0 A, leakage current ≤0.1 µA at VRWM, capacitance of 10 pF at 0 V, and IEC 61000-4-2 ±30 kV contact/air ESD rating - deployed in automotive ECUs and IVN interfaces.
For engineers reviewing the NZ8DH33VMXWT5G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping performance under 1.0 A pulse, ultra-low 10 pF capacitance for high-speed data lines, wettable flank XDFNW2 package for AOI compatibility, and AEC-Q101 qualification for automotive use.
Technical Context
The NZ8DH33VMXWT5G operates as a bidirectional TVS diode with symmetrical clamping behavior between pins 1 and 2. Its breakdown voltage range (31.53–36.27 V at IT = 5 mA) ensures precise turn-on during transients, while the 37.3 V typical clamping voltage at IPP = 1.0 A limits downstream voltage stress.
Designed for high-reliability automotive environments, it supports junction temperatures up to +175 °C and meets ISO 10605 (±30 kV) and IEC 61000-4-2 (±30 kV) standards. The XDFNW2 package enables compact placement on high-density PCBs without sacrificing thermal or ESD robustness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 33 V maximum working peak reverse voltage - defines safe operating DC/AC bias range before conduction |
| VBR (min/max) | 31.53 V / 36.27 V at 5 mA - ensures consistent, repeatable breakdown across production units |
| VC @ IPP=1.0 A | 37.3 V typical clamping voltage - limits transient-induced voltage overshoot on protected line |
| C @ 0 V, 1 MHz | 10 pF typical junction capacitance - preserves signal integrity on USB 2.0, CAN FD, or LIN bus lines |
| ESD Rating | ±30 kV per IEC 61000-4-2 contact/air - exceeds industrial and automotive ESD immunity requirements |
| TJ(MAX) | +175 °C maximum junction temperature - enables operation in engine bay or powertrain control modules |
| Package | XDFNW2 (1.0 × 0.6 × 0.5 mm) with wettable flanks - supports automated optical inspection and fine-pitch reflow |
Pinout & Package
The NZ8DH33VMXWT5G is housed in an XDFNW2 (Case 521AE) surface-mount package with two terminals and no polarity marking - configured as a symmetric bidirectional device.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode/Cathode (bidirectional) | Interchangeable terminal - conducts equally in both directions during overvoltage events |
| Pin 2 | Anode/Cathode (bidirectional) | Interchangeable terminal - forms low-impedance path to ground or rail during ESD strike |
Key Features
| Feature | Design Value |
|---|---|
| Precise clamping voltage | 37.3 V typical at 1.0 A pulse - minimizes voltage excursion on protected IC I/O pins |
| High ESD robustness | ±30 kV IEC 61000-4-2 contact/air - eliminates need for secondary ESD protection stages |
| Wettable flank package | XDFNW2 with solderable side walls - enables reliable automated optical inspection for zero-defect manufacturing |
| High-temperature rating | 175 °C TJ(MAX) - supports deployment in under-hood automotive electronics without derating |
| AEC-Q101 qualified | Automotive-grade reliability validation - required for ECU, ADAS, and body control module applications |
Applications
| Automotive Engine Control Unit (ECU) | In-Vehicle Networking (IVN) |
|---|---|
Use Scenario: Protecting LIN bus transceiver I/O pins from load dump and ESD events in 12 V power domains. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector interface. Use Value: 10 pF capacitance avoids signal distortion on 20 kbps LIN signals; 37.3 V clamping prevents damage to transceiver's 36 V absolute max rating. | Use Scenario: Shielding CAN FD physical layer lines against ESD coupling from nearby high-current actuators. IC Role / Device Role / Timing Role: Low-capacitance TVS diode bridging CANH–CANL differential pair. Use Value: Symmetric 33 V VRWM aligns with CAN FD common-mode range; ±30 kV ESD rating exceeds ISO 10605 requirements. |
| Infotainment System USB Port | ADAS Camera Power Line |
Use Scenario: Safeguarding USB 2.0 D+/D− lines against hot-plug ESD and cable discharge events. IC Role / Device Role / Timing Role: Dual-line bidirectional clamp integrated into USB connector footprint. Use Value: 10 pF capacitance maintains signal rise/fall times below USB 2.0 specification; XDFNW2 size fits tight connector keep-out zones. | Use Scenario: Suppressing load dump transients on 12 V camera power input in surround-view systems. IC Role / Device Role / Timing Role: Primary overvoltage clamp between power rail and ground. Use Value: 33 V VRWM accommodates nominal 12 V + 100 % tolerance; 4.5 A peak pulse current handles ISO 7637-2 Pulse 5a energy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SZ1.5SM33AT3G | Higher 1.5 kW peak power (vs. 300 mW), DO-214AC package, 40 pF capacitance | Better for high-energy surges; unsuitable for >10 Mbps data lines due to capacitance | Select when surge energy exceeds IEC 61000-4-5 Level 4; avoid for USB/CAN where low C is critical |
| ESD9B3.3ST5G | Lower 3.3 V VRWM, same XDFNW2 package, 15 pF capacitance, ±22 kV ESD | Optimized for 3.3 V logic rails; insufficient for 12 V automotive supply protection | Prefer for 3.3 V MCU GPIO protection; not a functional substitute for 33 V line clamping |
Compared with SZ1.5SM33AT3G and ESD9B3.3ST5G, the NZ8DH33VMXWT5G uniquely balances 33 V working voltage, 10 pF capacitance, and AEC-Q101 qualification - making it the only option among the three validated for bidirectional 12 V IVN signal line protection with automated optical inspectability.
Availability
NZ8DH33VMXWT5G is available at Aetrix Electronics and suitable for automotive ECUs, in-vehicle networking interfaces, and ADAS camera power conditioning requiring stable component supply across long production lifecycles.
Supply support for NZ8DH33VMXWT5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The NZ8DH Series belongs to onsemi's precision Zener TVS portfolio, engineered specifically for high-reliability, low-capacitance ESD protection in automotive signal paths where space, thermal margin, and process compatibility are critical.
FAQ
What is the clamping voltage of NZ8DH33VMXWT5G at 1.0 A peak pulse current?
The NZ8DH33VMXWT5G has a typical clamping voltage (VC) of 37.3 V at IPP = 1.0 A, measured per the 8/20 µs waveform. This value ensures protected circuits remain within safe voltage limits during ESD or fast transient events. The actual clamping voltage may vary slightly across temperature and unit-to-unit, but remains tightly controlled within datasheet limits for the NZ8DH33VMXWT5G.
Is NZ8DH33VMXWT5G qualified for automotive applications?
Yes, NZ8DH33VMXWT5G is AEC-Q101 qualified and PPAP capable, with an extended junction temperature range of −55 °C to +175 °C. It meets ISO 10605 and IEC 61000-4-2 ESD standards required for automotive ECUs and in-vehicle networks. The "SZ" prefix variant (e.g., SZNZ8DH33VMXWT5G) is designated for automotive-specific site and control requirements, but NZ8DH33VMXWT5G itself carries full qualification.
What package type does NZ8DH33VMXWT5G use, and why is it significant?
NZ8DH33VMXWT5G uses the XDFNW2 package (Case 521AE), measuring 1.0 × 0.6 × 0.5 mm with wettable flanks. This ultra-compact, leadless design enables high-density routing and supports automated optical inspection (AOI) - critical for zero-defect manufacturing in automotive electronics. Its thermal resistance (RJA = 400 °C/W) and solder joint reliability are optimized for reflow processes used in Tier 1 production.
How does the 10 pF capacitance of NZ8DH33VMXWT5G affect high-speed signal lines?
The 10 pF typical junction capacitance of NZ8DH33VMXWT5G at 0 V bias minimizes signal degradation on high-speed interfaces such as USB 2.0, CAN FD, and LIN. At 1 MHz, this low C value introduces negligible impedance (<16 Ω), preserving edge rates and eye diagram integrity. For comparison, higher-capacitance alternatives would attenuate harmonics and increase bit error rates - confirming NZ8DH33VMXWT5G's suitability for data line protection.
Can NZ8DH33VMXWT5G replace older SOT-23 dual-diode TVS devices?
Yes, NZ8DH33VMXWT5G is explicitly designed to replace legacy SOT-23 or SC-70 dual-diode configurations used for single-line bidirectional protection. Its XDFNW2 footprint occupies ~30 % less board area than SOT-23, eliminates bond wire parasitics, and provides superior ESD robustness (±30 kV vs. typical ±15–20 kV). Unlike dual-diode solutions, NZ8DH33VMXWT5G delivers matched, symmetrical clamping without internal node routing constraints.
NZ8DH33VMXWT5G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 2-UDFN
- Series:
- NZ8DH
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 26V (Max)
- Voltage - Breakdown (Min):
- 31.53V
- Voltage - Clamping (Max) @ Ipp:
- 37.3V
- Current - Peak Pulse (10/1000µs):
- 1A
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 10pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- 2-X2DFNW (1x0.6)
NZ8DH33VMXWT5G FAQ
1.How can I place an order for NZ8DH33VMXWT5G through Aetrix?
Please submit a Request for Quotation (RFQ) for NZ8DH33VMXWT5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NZ8DH33VMXWT5G reliable?
The price and inventory of NZ8DH33VMXWT5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NZ8DH33VMXWT5G is usually 5 days.
3.What payment methods are accepted for NZ8DH33VMXWT5G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NZ8DH33VMXWT5G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NZ8DH33VMXWT5G?
NZ8DH33VMXWT5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NZ8DH33VMXWT5G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NZ8DH33VMXWT5G?
For technical support, including NZ8DH33VMXWT5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NZ8DH33VMXWT5G requirements.
6.How does Aetrix verify that NZ8DH33VMXWT5G is sourced from the original manufacturer or authorized distributors?
All NZ8DH33VMXWT5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NZ8DH33VMXWT5G meets industry standards.
7.What is the process for return or replacement of NZ8DH33VMXWT5G?
All NZ8DH33VMXWT5G units undergo pre-shipment inspection (PSI). If there is an issue with NZ8DH33VMXWT5G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NZ8DH33VMXWT5G part is unused and in its original packaging.
Return procedure for NZ8DH33VMXWT5G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NZ8DH33VMXWT5G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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