onsemi NZQA6V8AXV5T2G

Overview

NZQA6V8AXV5T2G from onsemi is a quad unidirectional ESD protection diode in SOT-553 package, featuring 6.8 V breakdown voltage (V_BR = 6.47–7.14 V), 4.3 V working peak reverse voltage (V_RWM), clamping voltage ≤12 V at 13 A IPP, and IEC 61000-4-2 Level 4 ESD protection (±8 kV contact). It protects four independent signal lines in space-constrained interfaces such as USB 1.1/2.0 full-speed ports.

For engineers reviewing the NZQA6V8AXV5T2G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping performance under IEC 61000-4-2 surge, low leakage (<1 µA @ 4.3 V), 6.7 pF typical capacitance at 0 V bias, and compatibility with FR-4 PCB layouts requiring minimal trace clearance.

Technical Context

This device implements four independent unidirectional Zener-clamped ESD protection paths sharing a common anode terminal. Each channel operates with a defined V_RWM of 4.3 V and triggers conduction above V_BR (6.47–7.14 V) to clamp transients to ≤12 V at 13 A peak pulse current.

Its thermal design supports 380 mW steady-state power dissipation per diode (derated above 25°C at 3.05 mW/°C), with maximum junction temperature rated at 150°C. The SOT-553 package enables high-density placement while maintaining 327°C/W junction-to-ambient thermal resistance on standard FR-4 board.

Key Specifications

Pinout & Package

SOT-553 package: 5-lead plastic surface-mount package with gull-wing leads, 1.60 mm × 1.20 mm body size, 0.50 mm lead pitch, and 0.20 mm typical lead thickness. Designed for reflow soldering on FR-4 PCBs with recommended land pattern per ON Semiconductor's SOLDERING FOOTPRINT* specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESD5Z6.8T5G and TPD4E001DPYR, NZQA6V8AXV5T2G offers optimal balance of 4.3 V V_RWM, 6.7 pF capacitance, and common-anode architecture - making it especially effective for USB full-speed and compact serial interface protection where board space and signal fidelity are jointly constrained.

Availability

NZQA6V8AXV5T2G is available at Aetrix Electronics and suitable for USB interface protection, industrial serial port hardening, and medical sensor signal guarding requiring stable component supply and RoHS-compliant packaging.

Supply support for NZQA6V8AXV5T2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NZQA6V8AXV5T2G belongs to onsemi's ESD protection diode family designed specifically for high-density, low-capacitance transient suppression in portable and interface-critical electronics.

FAQ

What is the maximum clamping voltage of NZQA6V8AXV5T2G under IEC 61000-4-2 testing?

The NZQA6V8AXV5T2G exhibits a maximum clamping voltage of 12 V at 13 A peak pulse current (IPP), measured per the IEC 61000-4-2 8/20 µs waveform. This value is confirmed in the "Electrical Characteristics" table of the official datasheet (Rev. 8, November 2017), and represents the upper limit of voltage imposed on protected circuitry during an 8 kV contact ESD event. The NZQA6V8AXV5T2G maintains this clamping performance across its full operating temperature range.

Does NZQA6V8AXV5T2G support bidirectional signal lines like USB D+ and D−?

NZQA6V8AXV5T2G is a unidirectional ESD protection device with a common anode configuration, meaning each cathode must be connected to a signal line referenced to a positive supply or ground-return path. For true bidirectional lines such as USB D+ and D−, two NZQA6V8AXV5T2G devices are required - one per line - with their common anodes tied to ground. The NZQA6V8AXV5T2G itself does not provide symmetrical clamping for AC-coupled or floating signals.

What is the thermal derating behavior of NZQA6V8AXV5T2G above 25°C ambient?

NZQA6V8AXV5T2G has a thermal resistance of 327°C/W (junction-to-ambient) and a steady-state power dissipation rating of 380 mW per diode at 25°C. Above 25°C, its power rating derates linearly at 3.05 mW/°C, as specified in the Maximum Ratings table. At 70°C ambient, the allowable power drops to approximately 224 mW per diode. This derating applies when mounted on a standard FR-4 board with minimum copper pad area, as validated in ON Semiconductor's Application Note AND8308/D.

Can NZQA6V8AXV5T2G replace NZQA5V6AXV5T1G in a design?

No - NZQA6V8AXV5T2G and NZQA5V6AXV5T1G have different electrical specifications: the former has V_RWM = 4.3 V and V_BR = 6.47–7.14 V, while the latter has V_RWM = 3.0 V and V_BR = 5.3–5.9 V. Substituting NZQA6V8AXV5T2G for NZQA5V6AXV5T1G may result in insufficient clamping margin on 3.3 V rails or unintended conduction during normal operation. The NZQA6V8AXV5T2G is not a drop-in replacement and requires signal voltage and system-level ESD test validation.

Is NZQA6V8AXV5T2G compliant with USB 2.0 high-speed (480 Mbps) signaling?

No - NZQA6V8AXV5T2G is specified and validated for USB 1.1/2.0 full-speed (12 Mbps) applications only. Its 6.7 pF typical capacitance at 0 V bias introduces excessive signal attenuation and jitter at 480 Mbps, and the device's clamping response time is not characterized for high-speed eye-diagram compliance. For USB 2.0 high-speed protection, a lower-capacitance solution such as the NZQA6V8AXV5T2G's higher-performance counterparts (e.g., ESD7L5.0DT5G) is required.