Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P4KE8.2CAHE3/54

Part No.:
P4KE8.2CAHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-204AL, DO-41, Axial
Datasheet:
AetrixP4KE8.2CAHE3/54.pdf
Description:
TVS DIODE 7.02VWM 12.1VC DO204AL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,889

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P4KE8.2CAHE3/54 from Vishay General Semiconductor is a bidirectional Transient Voltage Suppressor (TVS) diode in DO-41 package, designed for clamping voltage transients on signal or power lines. It features 8.2 V nominal breakdown voltage (VBR), 7.02 V maximum stand-off voltage (VWM), 12.1 V clamping voltage (VC) at 33.1 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform - used in automotive sensor protection and industrial I/O interface surge suppression.

For engineers reviewing the P4KE8.2CAHE3/54 datasheet, P4KE8.2CAHE3/54 pinout, P4KE8.2CAHE3/54 application, or P4KE8.2CAHE3/54 equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification, DO-41 mechanical compatibility, low leakage (<200 µA at VWM), and thermal resistance (RθJL = 66 °C/W) for reliable transient energy dissipation in constrained layouts.

Technical Context

This device operates as a voltage-clamped shunt protector: when reverse (or forward, in bidirectional mode) voltage exceeds VBR (7.79–8.61 V), it avalanches to limit transient voltage to ≤12.1 V at 33.1 A. Its glass-passivated junction ensures stable breakdown and low incremental surge resistance, critical for repeatable clamping under repetitive ESD or load-switching events.

Designed for unclamped inductive switching and lightning-induced surges, it delivers 400 W peak pulse power with 0.01 % duty cycle, derates linearly above 25 °C per Fig. 2, and maintains operation from –55 °C to +175 °C junction temperature - supporting under-hood automotive and industrial control environments.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 7.79 V / 8.61 V - defines precise avalanche initiation window for predictable clamping onset
VWM 7.02 V - maximum continuous working voltage before leakage rises; sets safe operating margin below VBR
VC @ IPPM 12.1 V at 33.1 A - clamped voltage during 10/1000 µs surge; determines protected circuit's max stress level
ID @ VWM 200 µA - low reverse leakage ensures minimal standby power loss and signal integrity in high-impedance lines
PPPM 400 W - peak transient energy handling capacity with standardized 10/1000 µs waveform
TJ max +175 °C - enables use in high-temperature locations like engine compartments without derating penalties
RθJL 66 °C/W - low junction-to-lead thermal resistance supports rapid heat transfer to PCB copper or heatsink

Pinout & Package

DO-41 (DO-204AL) molded epoxy package with matte tin-plated leads; no polarity marking for bidirectional configuration - both terminals are electrically symmetric and interchangeable in circuit layout.

Pin/Terminal Circuit Role Design Meaning
Anode/Cathode (symmetrical) Bidirectional avalanche junction Either terminal serves as input/output; no cathode band - enables flexible placement across differential or single-ended lines
Lead 1 / Lead 2 Thermal and electrical interface Leads conduct surge current and dissipate heat; 10 mm lead length yields RθJA = 100 °C/W for board-level thermal modeling

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive applications including engine control units and ADAS sensor interfaces
Glass passivated junction Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity stress
400 W peak pulse power (10/1000 µs) Handles typical ISO 7637-2 Pulse 1/2a/5a transients without degradation
Low clamping ratio (VC/VBR ≈ 1.49) Minimizes overvoltage exposure to downstream ICs such as CAN transceivers or microcontroller I/O pins
RoHS-compliant HE3 suffix Meets JESD 201 Class 2 whisker resistance for high-reliability solder joints in automotive production

Applications

Automotive Sensor Protection Industrial PLC I/O Protection

Use Scenario: Protecting analog output lines of pressure/temperature sensors in engine bay against load dump and alternator ripple.

IC Role / Device Role / Timing Role: Shunt TVS clamping transient spikes before they reach ADC input or op-amp buffer stages.

Use Value: Maintains signal integrity under ISO 16750-2 Level IV stress (120 V/50 ms) with no latch-up or parametric shift in sensor output.

Use Scenario: Safeguarding 24 V digital input channels in programmable logic controllers exposed to relay coil flyback and EMI coupling.

IC Role / Device Role / Timing Role: Fast-response voltage clamp absorbing >100 A surge currents induced by inductive switching.

Use Value: Prevents false triggering and controller reset by limiting input voltage to ≤12.1 V during 10/1000 µs transients.

Consumer Power Adapter Interface Telecom Line Card Surge Protection

Use Scenario: Input-stage protection on AC-DC adapter secondary side against capacitor discharge and hot-plug surges.

IC Role / Device Role / Timing Role: Bidirectional clamping element placed between DC output and ground to suppress both polarities of transients.

Use Value: Enables compliance with IEC 61000-4-5 Level 3 (1 kV line-earth) without additional series impedance or filtering.

Use Scenario: Primary protection for Ethernet PHY or RS-485 transceiver lines in telecom base station line cards.

IC Role / Device Role / Timing Role: First-line defense against lightning-induced surges entering via RJ-45 or terminal blocks.

Use Value: Clamps common-mode surges to <15 V differential swing, preserving signal eye diagram integrity up to 100 Mbps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ8.0CA DO-214AA package; 8.0 V VWM, 12.2 V VC at 32.8 A; 600 W PPPM Higher power density but larger footprint; requires re-layout due to SMB package Select when higher surge margin is needed and board space allows SMB footprint
1.5KE8.2CA DO-201AD package; identical VBR/VC specs but 1.5 kW PPPM; higher IFSM (100 A) Greater single-pulse robustness; not AEC-Q101 qualified; commercial grade only Choose for non-automotive industrial systems requiring higher single-event survivability

Compared with SMBJ8.0CA and 1.5KE8.2CA, P4KE8.2CAHE3/54 offers AEC-Q101 qualification and DO-41 compatibility in cost-sensitive automotive and industrial designs where 400 W surge handling suffices - balancing qualification, thermal performance (RθJL = 66 °C/W), and legacy through-hole assembly.

Availability

P4KE8.2CAHE3/54 is available at Aetrix Electronics and suitable for automotive sensor modules, industrial PLC I/O cards, and telecom line card designs requiring stable component supply, AEC-Q101 compliance, and DO-41 through-hole manufacturability.

Supply support for P4KE8.2CAHE3/54 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade validation.

The P4KE series belongs to Vishay's TRANSZORB® TVS family, engineered specifically for robust, standardized transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure applications demanding AEC-Q101 or high-surge immunity.

FAQ

What is the breakdown voltage range for P4KE8.2CAHE3/54?

The P4KE8.2CAHE3/54 has a guaranteed breakdown voltage (VBR) range of 7.79 V to 8.61 V at 10 mA test current, measured per ANSI/IEEE C62.35. This tight tolerance ensures consistent clamping behavior across production lots and supports precise overvoltage protection design for 5 V or 8 V rail systems. The value is confirmed in Table 1 of Vishay document 88365.

Is P4KE8.2CAHE3/54 suitable for automotive applications?

Yes, P4KE8.2CAHE3/54 is AEC-Q101 qualified (as indicated by the "HE3" suffix) and rated for operation from –55 °C to +175 °C junction temperature. It meets requirements for under-hood and chassis-mounted electronics, including engine control sensors and body control modules - validated per stress tests including temperature cycling, HTRB, and surge endurance.

How does the bidirectional configuration of P4KE8.2CAHE3/54 affect circuit layout?

The P4KE8.2CAHE3/54 has no polarity marking and symmetrical terminals, allowing direct placement across any two nodes needing bidirectional clamping - such as differential signal pairs or AC-coupled lines. Unlike unidirectional TVS diodes, it eliminates orientation errors during manual or automated assembly and simplifies schematic symbol usage in SPICE models.

What is the maximum clamping voltage of P4KE8.2CAHE3/54 under surge conditions?

The P4KE8.2CAHE3/54 clamps to a maximum of 12.1 V when subjected to its rated 33.1 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is specified in the Electrical Characteristics table and represents worst-case voltage seen by protected circuitry - critical for ensuring downstream ICs remain within absolute maximum ratings during transients.

Does P4KE8.2CAHE3/54 require a heatsink for standard operation?

No, P4KE8.2CAHE3/54 does not require an external heatsink under typical transient conditions. Its RθJL of 66 °C/W allows sufficient heat conduction through leads to PCB copper. However, for repetitive surges exceeding 0.01 % duty cycle or ambient temperatures above 75 °C, PCB copper area and lead length must be optimized per Fig. 2 and Fig. 5 derating curves in the datasheet.

P4KE8.2CAHE3/54 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-204AL, DO-41, Axial
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
7.02V
Voltage - Breakdown (Min):
7.79V
Voltage - Clamping (Max) @ Ipp:
12.1V
Current - Peak Pulse (10/1000µs):
33.1A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AL (DO-41)

P4KE8.2CAHE3/54 FAQ

1.How can I place an order for P4KE8.2CAHE3/54 through Aetrix?

Please submit a Request for Quotation (RFQ) for P4KE8.2CAHE3/54 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4KE8.2CAHE3/54 reliable?

The price and inventory of P4KE8.2CAHE3/54 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4KE8.2CAHE3/54 is usually 5 days.

3.What payment methods are accepted for P4KE8.2CAHE3/54?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4KE8.2CAHE3/54 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4KE8.2CAHE3/54?

P4KE8.2CAHE3/54 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4KE8.2CAHE3/54 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4KE8.2CAHE3/54?

For technical support, including P4KE8.2CAHE3/54 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4KE8.2CAHE3/54 requirements.

6.How does Aetrix verify that P4KE8.2CAHE3/54 is sourced from the original manufacturer or authorized distributors?

All P4KE8.2CAHE3/54 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4KE8.2CAHE3/54 meets industry standards.

7.What is the process for return or replacement of P4KE8.2CAHE3/54?

All P4KE8.2CAHE3/54 units undergo pre-shipment inspection (PSI). If there is an issue with P4KE8.2CAHE3/54, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4KE8.2CAHE3/54 part is unused and in its original packaging.

Return procedure for P4KE8.2CAHE3/54:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4KE8.2CAHE3/54 Tags

  • P4KE8.2CAHE3/54
  • P4KE8.2CAHE3/54 PDF
  • P4KE8.2CAHE3/54 Datasheet
  • P4KE8.2CAHE3/54 Specifications
  • P4KE8.2CAHE3/54 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P4KE8.2CAHE3/54
  • Buy P4KE8.2CAHE3/54
  • P4KE8.2CAHE3/54 Price
  • P4KE8.2CAHE3/54 Distributor
  • P4KE8.2CAHE3/54 Supplier
  • P4KE8.2CAHE3/54 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER