Vishay General Semiconductor - Diodes Division P4SMA18AHM3_A/I
- Part No.:
- P4SMA18AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA18AHM3_A/I.pdf
- Description:
- TVS DIODE 15.3VWM 25.2VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:4,420
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P4SMA18AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, rated for 18 V breakdown voltage (VBR = 17.1–18.9 V at 1 mA), 15.3 V standoff voltage (VWM), and 25.2 V clamping voltage (VC) at 15.9 A peak pulse current (IPPM). It delivers 400 W peak pulse power (10/1000 µs waveform) and is AEC-Q101 qualified for automotive-grade transient protection on power rails and signal lines.
For engineers reviewing the P4SMA18AHM3_A/I datasheet, P4SMA18AHM3_A/I pinout, P4SMA18AHM3_A/I application, or P4SMA18AHM3_A/I equivalent, this device is selected for robust overvoltage protection in automotive ECUs, industrial sensor interfaces, and DC power input stages where low clamping voltage, fast response (<1 ns), and halogen-free RoHS compliance are required.
Technical Context
The P4SMA18AHM3_A/I operates as a unidirectional avalanche diode with glass-passivated junction, enabling sub-nanosecond response to ESD and surge transients. Its clamping behavior is defined by a 25.2 V maximum VC at 15.9 A IPPM, with thermal resistance RθJA = 120 °C/W and RθJL = 30 °C/W under standard PCB mounting (0.2" × 0.2" copper pads).
It supports repetitive surge duty cycles up to 0.01 %, derates linearly above TA = 25 °C per Fig. 2, and meets MSL Level 1 (peak reflow 260 °C). The cathode band denotes polarity; no marking is used for bidirectional variants - but this part is explicitly unidirectional per ordering code "A" and marking "18A".
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 17.1 V / 18.9 V at IT = 1 mA - defines precise avalanche initiation threshold for reliable overvoltage triggering |
| VWM | 15.3 V - maximum continuous reverse operating voltage before leakage exceeds 1 µA |
| VC @ IPPM | 25.2 V at 15.9 A - clamped voltage during 10/1000 µs surge, limiting downstream IC stress |
| PPPM | 400 W - peak transient power handling capability under standardized surge waveform |
| IFSM | 40 A - single half-sine surge rating (8.3 ms), supporting inrush and load-dump immunity |
| TJ max. | +150 °C - maximum junction temperature, enabling operation in under-hood automotive environments |
| Package | SMA (DO-214AC) - industry-standard SMD outline with 5.28 mm × 4.50 mm footprint and matte tin-plated leads |
Pinout & Package
SMA (DO-214AC) package: surface-mount, two-terminal, molded epoxy case with cathode band marking. Terminals are matte tin-plated, solderable per J-STD-002 and JESD 22-B102. Polarity: cathode end marked with band; anode unmarked.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts surge current to ground when VLINE > VBR |
| Anode (unmarked end) | Reference/return node | Typically tied to system ground or low-impedance return path for clamping action |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control, body electronics, and ADAS sensors |
| Halogen-free & RoHS-compliant (HM3 suffix) | Meets global environmental regulations without compromising surge robustness or thermal performance |
| 400 W peak pulse power (10/1000 µs) | Withstands high-energy transients common in 12 V/24 V vehicle electrical systems |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising surges, improving protection margin for sensitive ICs |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking, reducing manufacturing complexity and cost |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamping |
|---|---|
|
Use Scenario: Protecting 12 V power rail of automotive body control module (BCM) against ISO 7637-2 load dump and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery feed and LDO input, clamping surges within 1 ns to prevent regulator latch-up or destruction. Use Value: 25.2 V clamping ensures downstream 3.3 V/5 V regulators remain below absolute maximum ratings during 100 V/500 ms load dump events. |
Use Scenario: Shielding analog output (0–5 V) of pressure sensor in factory automation PLC I/O module from ESD and inductive switching noise. IC Role / Device Role / Timing Role: TVS mounted directly at connector entry point, shunting transients before reaching op-amp buffer stage. Use Value: Sub-1 ns response and 15.3 V VWM preserve signal integrity while blocking >2 kV HBM ESD pulses per IEC 61000-4-2. |
| Telecom DC Power Feeds | Consumer Device USB Port Protection |
|
Use Scenario: Safeguarding -48 V telecom rectifier output feeding remote radio units against lightning-induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Unidirectional TVS configured with cathode to -48 V rail and anode to ground, clamping negative-going transients. Use Value: 400 W PPPM rating handles multi-kA induced surges; 150 °C TJ max supports operation in sealed outdoor enclosures. |
Use Scenario: Adding secondary-level surge protection on VBUS line of USB-C port in smart home hub, supplementing primary ESD array. IC Role / Device Role / Timing Role: Standoff-rated TVS placed after USB switch, absorbing residual energy missed by front-end polymer TVS. Use Value: 15.3 V VWM avoids interference with 5 V USB signaling; 25.2 V VC prevents damage to USB PD controller during 10/1000 µs surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ18A-E3/5A | Same VBR/VWM/VC specs, but commercial-grade (not AEC-Q101); RθJA = 135 °C/W vs. 120 °C/W | Lacks automotive qualification; suitable for industrial/commercial power supplies only | Select when AEC-Q101 is not required and higher thermal resistance is acceptable |
| 1.5SMC18A | Higher package thermal mass (SMC/DO-214AB); 1.5 kW PPPM rating but larger footprint (7.11 mm × 6.22 mm) | Better power handling but incompatible with space-constrained SMA layouts | Choose only if board area allows larger SMC package and >400 W surge margin is critical |
Compared with SMAJ18A-E3/5A and 1.5SMC18A, the P4SMA18AHM3_A/I uniquely combines AEC-Q101 qualification, halogen-free construction, and optimized thermal resistance in the compact SMA footprint - making it the preferred choice for automotive and high-reliability industrial designs requiring drop-in manufacturability and long-term supply stability.
Availability
P4SMA18AHM3_A/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom DC power feeds requiring stable component supply, long lifecycle support, and traceable halogen-free sourcing.
Supply support for P4SMA18AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The P4SMA Series is designed for high-reliability transient suppression in automotive, industrial, and telecom systems - delivering consistent clamping performance, AEC-Q101 validation, and scalable packaging across voltage grades.
FAQ
What is the breakdown voltage tolerance for P4SMA18AHM3_A/I?
The P4SMA18AHM3_A/I has a specified breakdown voltage range of 17.1 V to 18.9 V at test current IT = 1 mA, representing ±5.6 % tolerance around the nominal 18 V rating. This tight VBR window ensures predictable turn-on behavior across production lots and temperature extremes, critical for protecting voltage-sensitive loads in automotive and industrial applications. The P4SMA18AHM3_A/I maintains this specification under all conditions defined in the Vishay datasheet 88367.
Is P4SMA18AHM3_A/I suitable for bidirectional transient protection?
No, the P4SMA18AHM3_A/I is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. It protects against positive-going transients on a line referenced to ground. For bidirectional protection (e.g., AC lines or differential signals), a "CA" suffix part like P4SMA18CA must be used. Using P4SMA18AHM3_A/I in bidirectional configurations risks forward conduction and failure during negative excursions. Always verify polarity alignment before placing P4SMA18AHM3_A/I in circuit.
What does the "HM3_A/I" suffix mean in P4SMA18AHM3_A/I?
The "HM3" denotes halogen-free, RoHS-compliant construction with whisker-resistant matte tin plating; "A" indicates unidirectional configuration and AEC-Q101 qualification; "I" specifies 7500-unit tape-and-reel packaging on 13-inch reels. This full suffix confirms the P4SMA18AHM3_A/I meets automotive reliability standards, environmental compliance requirements, and high-volume SMT assembly needs - distinguishing it from commercial-grade variants like P4SMA18A-E3/61.
How does P4SMA18AHM3_A/I perform under elevated ambient temperatures?
The P4SMA18AHM3_A/I derates linearly above TA = 25 °C per Figure 2 in datasheet 88367: at 85 °C ambient, its 400 W peak pulse power drops to ~280 W, and IPPM reduces proportionally. Its RθJA = 120 °C/W assumes minimum recommended pad layout (0.2" × 0.2" copper). To maintain performance in hot environments, use enhanced copper pour or thermal vias. The P4SMA18AHM3_A/I remains fully functional up to +150 °C junction temperature.
Can P4SMA18AHM3_A/I replace older P4SMA18A variants in existing designs?
Yes - the P4SMA18AHM3_A/I is a direct replacement for legacy P4SMA18A parts in terms of electrical specs, pinout, and footprint. It adds AEC-Q101 qualification, halogen-free materials, and improved whisker resistance, with identical VBR, VWM, VC, and thermal characteristics. No PCB or schematic changes are needed. However, confirm that the "HM3_A/I" packaging matches your assembly line's reel-handling capability before migration. The P4SMA18AHM3_A/I retains full backward compatibility while upgrading reliability and compliance.
P4SMA18AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15.3V
- Voltage - Breakdown (Min):
- 17.1V
- Voltage - Clamping (Max) @ Ipp:
- 25.2V
- Current - Peak Pulse (10/1000µs):
- 15.9A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA18AHM3_A/I FAQ
1.How can I place an order for P4SMA18AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA18AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA18AHM3_A/I reliable?
The price and inventory of P4SMA18AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA18AHM3_A/I is usually 5 days.
3.What payment methods are accepted for P4SMA18AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA18AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA18AHM3_A/I?
P4SMA18AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA18AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA18AHM3_A/I?
For technical support, including P4SMA18AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA18AHM3_A/I requirements.
6.How does Aetrix verify that P4SMA18AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All P4SMA18AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA18AHM3_A/I meets industry standards.
7.What is the process for return or replacement of P4SMA18AHM3_A/I?
All P4SMA18AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA18AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA18AHM3_A/I part is unused and in its original packaging.
Return procedure for P4SMA18AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA18AHM3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

