Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P4SMA82AHE3_A/H

Part No.:
P4SMA82AHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixP4SMA82AHE3_A/H.pdf
Description:
TVS DIODE 70.1VWM 113VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,107

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P4SMA82AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping transient overvoltages on power and signal lines. It features a 77.9 V minimum breakdown voltage (VBR), 70.1 V maximum standoff voltage (VWM), 113 V maximum clamping voltage (VC) at 3.5 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial electronics.

For engineers reviewing the P4SMA82AHE3_A/H datasheet, P4SMA82AHE3_A/H pinout, P4SMA82AHE3_A/H application, or P4SMA82AHE3_A/H equivalent, key selection criteria include its AEC-Q101 qualification, unidirectional polarity, low incremental surge resistance, fast response time, and compatibility with automated SMT placement on PCBs requiring robust ESD and surge immunity per IEC 61000-4-2/4-5.

Technical Context

The P4SMA82AHE3_A/H operates as a clamping-type TVS diode that enters avalanche conduction when reverse voltage exceeds its VBR threshold (77.9–86.1 V), limiting transient energy by diverting surge current away from protected circuitry. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.

Rated for 400 W peak pulse power (10/1000 µs) and 40 A non-repetitive forward surge current (8.3 ms half-sine), it maintains thermal stability via RθJA = 120 °C/W and operates across –65 °C to +150 °C junction temperature range - validated for automotive-grade deployment per AEC-Q101 requirements.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 77.9 V / 86.1 V - defines precise avalanche onset range for predictable clamping behavior
VWM 70.1 V - maximum continuous reverse operating voltage before leakage rises significantly
VC @ IPPM 113 V at 3.5 A - clamped voltage during 10/1000 µs surge, determining protection margin for downstream ICs
PPPM 400 W - peak transient energy absorption capability without failure under standard surge waveform
IFSM 40 A - withstands single half-sine surge events common in automotive load-dump scenarios
TJ max +150 °C - enables operation in under-hood automotive environments and high-ambient industrial settings
AEC-Q101 Qualified - certified for automotive electronic systems requiring zero-defect reliability and extended temperature cycling

Pinout & Package

Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; cathode indicated by band marking.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / Reverse surge return path Connected to ground or low-impedance return plane to complete clamping loop during transients
Cathode Reverse-biased terminal / Clamping node Connected to protected line (e.g., power rail or signal trace); conducts avalanche current when VREV > VBR

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive electronics including engine control units, body modules, and ADAS sensors
Glass passivated junction Ensures stable VBR tolerance and long-term parameter consistency under thermal cycling and humidity stress
400 W peak pulse power (10/1000 µs) Provides robust immunity against IEC 61000-4-5 Level 4 surges (4 kV line-to-earth) in industrial power supplies
Low incremental surge resistance Minimizes VC overshoot during fast-rising transients (<1 ns rise time), improving protection fidelity
MSL Level 1 (260 °C peak reflow) Supports standard lead-free SMT assembly without moisture-related popcorn failure risk

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load-dump transients up to 120 V and ISO 7637-2 pulses.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground to clamp overvoltage before reaching LDOs and microcontrollers.

Use Value: Limits clamped voltage to 113 V at 3.5 A, preserving downstream components rated for ≤130 V absolute maximum.

Use Scenario: Safeguarding analog outputs of pressure/temperature sensors connected to PLC I/O modules exposed to field wiring surges.

IC Role / Device Role / Timing Role: TVS mounted at connector entry point to shunt induced lightning-induced transients on 4–20 mA or 0–10 V signal lines.

Use Value: Fast response and low VC ensure sensor output remains within ADC input range during 1 kV/500 A surge events.

Telecom Line Card Surge Suppression Consumer Device USB Port ESD Protection

Use Scenario: Front-end protection of PoE-powered Ethernet switches against induced surges on data pairs and power conductors.

IC Role / Device Role / Timing Role: Paired unidirectional TVS devices on each DC feed line to absorb common-mode surges while maintaining signal integrity.

Use Value: 400 W rating handles repeated 10/1000 µs surges per ITU-T K.20/K.21 standards without degradation.

Use Scenario: Secondary-level protection on USB VBUS lines in smart home hubs subjected to user-handling ESD and hot-plug transients.

IC Role / Device Role / Timing Role: Standoff voltage (70.1 V) exceeds USB 5 V nominal and 5.5 V max, enabling reliable clamping only during fault conditions.

Use Value: AEC-Q101 qualification ensures consistent performance across production batches and extended product lifecycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ82A-E3/5A Same VWM/VBR/VC specs but lower PPPM (400 W vs. 400 W), identical SMA package and AEC-Q101 qualification No functional difference; differs only in tape-and-reel packaging (5A vs. H) and base suffix (E3 vs. HE3) Select SMAJ82A-E3/5A if sourcing volume reels (7500 pcs) or requiring legacy Vishay part numbering alignment
1.5SMC82A Higher package thermal resistance (RθJA ≈ 150 °C/W vs. 120 °C/W), same electrical specs, larger SMC (DO-214AB) footprint Requires PCB layout change; better suited for higher-power derating needs where board space permits larger package Choose 1.5SMC82A only when thermal margin is constrained and DO-214AB mounting is already standardized in design

Compared with SMAJ82A-E3/5A, P4SMA82AHE3_A/H offers identical protection performance in a RoHS-compliant, AEC-Q101-qualified variant with optimized SMT process compatibility; versus 1.5SMC82A, it delivers superior thermal performance in a smaller footprint but requires verification of current layout compatibility with DO-214AC dimensions.

Availability

P4SMA82AHE3_A/H is available at Aetrix Electronics and suitable for automotive ECU designs, industrial sensor interface circuits, telecom line card surge protection, and consumer USB power rail hardening requiring stable component supply and AEC-Q101 compliance.

Supply support for P4SMA82AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and passive components with emphasis on reliability, efficiency, and application-specific optimization.

The P4SMA Series is engineered for high-reliability transient suppression in automotive, industrial, and telecom infrastructure - delivering consistent clamping performance, AEC-Q101 validation, and SMT-ready packaging for demanding surge environments.

FAQ

What is the clamping voltage of P4SMA82AHE3_A/H at its rated peak pulse current?

The P4SMA82AHE3_A/H has a maximum clamping voltage (VC) of 113 V at 3.5 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is critical for ensuring downstream components remain within their absolute maximum ratings. The P4SMA82AHE3_A/H achieves this clamping performance while maintaining low incremental surge resistance and fast response time.

Is P4SMA82AHE3_A/H qualified for automotive applications?

Yes, P4SMA82AHE3_A/H is explicitly AEC-Q101 qualified, as confirmed in the Vishay datasheet revision 09-Jan-2024. This qualification covers temperature cycling, humidity bias, mechanical shock, and surge endurance testing required for automotive electronics deployed in engine compartments, body control modules, and ADAS subsystems. The "HE3" suffix denotes RoHS-compliant and AEC-Q101-qualified construction, making P4SMA82AHE3_A/H suitable for Tier 1 automotive supply chains.

What does the "HE3_A/H" suffix mean in P4SMA82AHE3_A/H?

The "HE3" portion indicates RoHS-compliant construction with AEC-Q101 qualification; "A" denotes the revision level of the device specification; and "H" specifies the packaging format - 7-inch diameter plastic tape and reel containing 1800 units. This full suffix distinguishes P4SMA82AHE3_A/H from commercial-grade variants (e.g., E3/61) and confirms its automotive-grade material content, test certification, and logistics configuration. The P4SMA82AHE3_A/H ordering code ensures traceability to qualified production lots.

How does P4SMA82AHE3_A/H compare to bidirectional TVS diodes like P4SMA82CA?

P4SMA82AHE3_A/H is unidirectional and intended for DC power line or signal line protection where polarity is fixed, offering lower leakage current and tighter VBR tolerance than bidirectional equivalents. In contrast, P4SMA82CA supports AC-coupled or polarity-agnostic applications but exhibits higher reverse leakage above VWM. The P4SMA82AHE3_A/H's cathode band marking and single-junction structure simplify layout and reduce parasitic capacitance - advantageous for high-speed signal lines where P4SMA82AHE3_A/H is preferred over bidirectional alternatives.

What is the maximum operating junction temperature for P4SMA82AHE3_A/H?

The P4SMA82AHE3_A/H has a maximum operating junction temperature (TJmax) of +150 °C, as specified in the Vishay datasheet. This rating enables reliable operation in under-hood automotive environments and high-ambient industrial enclosures. Thermal design must account for RθJA = 120 °C/W and recommended 0.2" × 0.2" copper pads per terminal to maintain safe junction temperatures during repetitive surge events. Derating curves in Figure 2 of the P4SMA82AHE3_A/H datasheet guide thermal margin validation across ambient conditions.

P4SMA82AHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
P4SMA, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
70.1V
Voltage - Breakdown (Min):
77.9V
Voltage - Clamping (Max) @ Ipp:
113V
Current - Peak Pulse (10/1000µs):
3.5A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

P4SMA82AHE3_A/H FAQ

1.How can I place an order for P4SMA82AHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for P4SMA82AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4SMA82AHE3_A/H reliable?

The price and inventory of P4SMA82AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA82AHE3_A/H is usually 5 days.

3.What payment methods are accepted for P4SMA82AHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA82AHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4SMA82AHE3_A/H?

P4SMA82AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4SMA82AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4SMA82AHE3_A/H?

For technical support, including P4SMA82AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA82AHE3_A/H requirements.

6.How does Aetrix verify that P4SMA82AHE3_A/H is sourced from the original manufacturer or authorized distributors?

All P4SMA82AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA82AHE3_A/H meets industry standards.

7.What is the process for return or replacement of P4SMA82AHE3_A/H?

All P4SMA82AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA82AHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4SMA82AHE3_A/H part is unused and in its original packaging.

Return procedure for P4SMA82AHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4SMA82AHE3_A/H Tags

  • P4SMA82AHE3_A/H
  • P4SMA82AHE3_A/H PDF
  • P4SMA82AHE3_A/H Datasheet
  • P4SMA82AHE3_A/H Specifications
  • P4SMA82AHE3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P4SMA82AHE3_A/H
  • Buy P4SMA82AHE3_A/H
  • P4SMA82AHE3_A/H Price
  • P4SMA82AHE3_A/H Distributor
  • P4SMA82AHE3_A/H Supplier
  • P4SMA82AHE3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER