Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P4SMA9.1AHE3_A/H

Part No.:
P4SMA9.1AHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixP4SMA9.1AHE3_A/H.pdf
Description:
TVS DIODE 7.78VWM 13.4VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,589

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P4SMA9.1AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features a 9.1 V breakdown voltage (VBR = 8.65–9.55 V at IT = 1.0 mA), 7.78 V maximum stand-off voltage (VWM), 13.4 V clamping voltage (VC) at 29.9 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.

For engineers reviewing the P4SMA9.1AHE3_A/H datasheet, P4SMA9.1AHE3_A/H pinout, P4SMA9.1AHE3_A/H application, or P4SMA9.1AHE3_A/H equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 120 °C/W), polarity marking convention, and real-world protection use cases - all confirmed from Vishay's official P4SMA Series document #88367 (Rev. 09-Jan-2024).

Technical Context

The P4SMA9.1AHE3_A/H operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling fast response (<1 ns) to ESD and inductive switching transients. The device is rated for repetitive 400 W pulses (duty cycle 0.01%) on 0.2" × 0.2" copper pads and derates linearly above TA = 25 °C per Fig. 2.

It complies with AEC-Q101 stress testing for automotive applications and meets UL 94 V-0 flammability requirements. With a maximum junction temperature of 150 °C and JESD201 Class 2 whisker resistance, it supports high-reliability placement in engine control units, ADAS sensor interfaces, and industrial PLC I/O modules where robust overvoltage immunity is required.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 8.65 V / 9.55 V at IT = 1.0 mA - defines precise clamping onset threshold for reliable overvoltage detection
VWM 7.78 V - maximum continuous reverse operating voltage before leakage exceeds 50 µA
VC @ IPPM 13.4 V at 29.9 A - clamped voltage during 10/1000 µs surge, limiting downstream component stress
PPPM 400 W - peak transient power handling capability under standard lightning-surge waveform
IFSM 40 A - single half-sine surge current rating (8.3 ms), supporting inrush and fault-current events
RθJA 120 °C/W - thermal resistance from junction to ambient, critical for PCB pad layout and power derating
AEC-Q101 Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD

Pinout & Package

Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band; anode is unmarked end. Molding compound meets UL 94 V-0.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Reverse-biased terminal Connected to protected line; conducts during overvoltage to shunt current to ground
Anode (unbanded end) Reference/ground terminal Typically tied to system ground or low-impedance return path for effective clamping

Key Features

Feature Design Value
400 W peak pulse power (10/1000 µs) Enables protection against IEC 61000-4-5 Level 4 surges without external series impedance
Glass passivated junction Ensures stable VBR over lifetime and improved moisture resistance vs. epoxy-passivated alternatives
AEC-Q101 qualified (HE3 suffix) Validated for automotive under-hood and chassis applications requiring extended temperature and reliability compliance
MSL Level 1 (260 °C reflow) Supports standard lead-free SMT assembly without preconditioning or special handling
Low incremental surge resistance Minimizes VC overshoot during fast transients, improving protection margin for 3.3 V/5 V logic

Applications

Automotive Engine Control Unit (ECU) Power Input Industrial PLC Digital Input Protection

Use Scenario: Protects 12 V supply rail from load-dump spikes (up to 35 V, 100 ms) and alternator ripple in vehicle ECUs.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery input and DC/DC converter input stage.

Use Value: Clamps transients to ≤13.4 V, preventing damage to 16 V-rated input capacitors and LDO regulators.

Use Scenario: Shields 24 V digital input channels from field-wiring induced surges in factory automation systems.

IC Role / Device Role / Timing Role: Standoff protection device mounted at connector entry point before optocoupler or Schmitt trigger.

Use Value: Limits voltage seen by input conditioning circuitry to safe levels while maintaining <50 µA leakage at 24 V nominal.

Consumer Appliance Motor Drive Board Telecom Base Station Sensor Interface

Use Scenario: Suppresses inductive kickback from brushed DC motor commutation in washing machine control boards.

IC Role / Device Role / Timing Role: Parallel-connected TVS across motor terminals and H-bridge power FETs.

Use Value: Absorbs 400 W transient energy within nanoseconds, preventing gate oxide rupture in MOSFETs.

Use Scenario: Guards RS-485 transceiver I/O pins against ESD and lightning-induced surges in outdoor telecom cabinets.

IC Role / Device Role / Timing Role: Secondary protection stage after gas discharge tube (GDT), placed adjacent to PHY IC.

Use Value: Provides low-clamping-voltage backup with sub-1 ns response, ensuring data integrity during 8 kV contact ESD events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ9.0A Higher VWM (7.75 V), same VBR range (8.5–9.4 V), SMB package (larger footprint, lower RθJA = 85 °C/W) Better thermal performance in high-duty-cycle environments; requires larger PCB area Select when board space allows and sustained surge repetition is expected
1.5SMC9.0A Same VBR/VWM, higher PPPM (1500 W), SMC package (DO-214AB), RθJA = 60 °C/W Designed for higher-energy threats (e.g., ISO 7637-2 Pulse 5a); not AEC-Q101 qualified Choose for non-automotive industrial systems needing greater surge headroom

Compared with SMBJ9.0A and 1.5SMC9.0A, the P4SMA9.1AHE3_A/H offers AEC-Q101 qualification and SMA footprint compatibility for space-constrained automotive modules, while delivering sufficient 400 W clamping for most load-switching and ESD scenarios - making it optimal for cost-sensitive, volume automotive and industrial designs where qualification and size are prioritized over extreme surge capacity.

Availability

P4SMA9.1AHE3_A/H is available at Aetrix Electronics and suitable for automotive engine control units, industrial PLC I/O modules, and consumer appliance motor drive boards requiring stable component supply, AEC-Q101 compliance, and consistent TVS performance across production batches.

Supply support for P4SMA9.1AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The P4SMA Series targets cost-effective, high-volume transient suppression in automotive, industrial, and consumer electronics - engineered for automated SMT placement, AEC-Q101 qualification, and robust performance under real-world surge conditions.

FAQ

What is the breakdown voltage tolerance of the P4SMA9.1AHE3_A/H?

The P4SMA9.1AHE3_A/H has a breakdown voltage (VBR) range of 8.65 V to 9.55 V at test current IT = 1.0 mA, corresponding to ±5% tolerance around the nominal 9.1 V rating. This tight VBR spread ensures predictable clamping behavior across production lots and supports accurate system-level overvoltage margin analysis in designs using the P4SMA9.1AHE3_A/H.

Is the P4SMA9.1AHE3_A/H suitable for automotive applications?

Yes, the P4SMA9.1AHE3_A/H is AEC-Q101 qualified, as confirmed by its HE3 suffix and documentation in Vishay's P4SMA Series datasheet #88367. It undergoes stress testing for temperature cycling, high-temperature reverse bias, and ESD, making it appropriate for under-hood and chassis-mounted automotive electronics where reliability under harsh thermal and electrical conditions is mandatory - including use in ECUs, body control modules, and ADAS sensor interfaces containing the P4SMA9.1AHE3_A/H.

What is the maximum clamping voltage of the P4SMA9.1AHE3_A/H during a surge event?

The P4SMA9.1AHE3_A/H exhibits a maximum clamping voltage (VC) of 13.4 V at peak pulse current (IPPM) = 29.9 A, measured with a 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during standardized surge events and directly determines the safe operating margin for downstream components such as 16 V-rated input capacitors or 5 V logic ICs sharing the same rail protected by the P4SMA9.1AHE3_A/H.

Does the P4SMA9.1AHE3_A/H have a bidirectional variant?

No - the P4SMA9.1AHE3_A/H is strictly unidirectional, indicated by the "A" suffix and cathode band marking. Bidirectional variants use the "CA" suffix (e.g., P4SMA9.1CA). The unidirectional configuration of the P4SMA9.1AHE3_A/H makes it ideal for DC power rail protection where polarity is fixed, unlike AC or differential signal lines that require symmetrical clamping in both directions - a function not supported by the P4SMA9.1AHE3_A/H.

What is the thermal resistance of the P4SMA9.1AHE3_A/H, and how does it affect layout?

The P4SMA9.1AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value dictates PCB copper area requirements: reducing pad size increases junction temperature rise under power dissipation, potentially exceeding the 150 °C max TJ. Layouts for the P4SMA9.1AHE3_A/H must therefore allocate adequate copper to maintain safe operation during repetitive surge events.

P4SMA9.1AHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
P4SMA, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
7.78V
Voltage - Breakdown (Min):
8.65V
Voltage - Clamping (Max) @ Ipp:
13.4V
Current - Peak Pulse (10/1000µs):
29.9A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

P4SMA9.1AHE3_A/H FAQ

1.How can I place an order for P4SMA9.1AHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for P4SMA9.1AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4SMA9.1AHE3_A/H reliable?

The price and inventory of P4SMA9.1AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA9.1AHE3_A/H is usually 5 days.

3.What payment methods are accepted for P4SMA9.1AHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA9.1AHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4SMA9.1AHE3_A/H?

P4SMA9.1AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4SMA9.1AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4SMA9.1AHE3_A/H?

For technical support, including P4SMA9.1AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA9.1AHE3_A/H requirements.

6.How does Aetrix verify that P4SMA9.1AHE3_A/H is sourced from the original manufacturer or authorized distributors?

All P4SMA9.1AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA9.1AHE3_A/H meets industry standards.

7.What is the process for return or replacement of P4SMA9.1AHE3_A/H?

All P4SMA9.1AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA9.1AHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4SMA9.1AHE3_A/H part is unused and in its original packaging.

Return procedure for P4SMA9.1AHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4SMA9.1AHE3_A/H Tags

  • P4SMA9.1AHE3_A/H
  • P4SMA9.1AHE3_A/H PDF
  • P4SMA9.1AHE3_A/H Datasheet
  • P4SMA9.1AHE3_A/H Specifications
  • P4SMA9.1AHE3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P4SMA9.1AHE3_A/H
  • Buy P4SMA9.1AHE3_A/H
  • P4SMA9.1AHE3_A/H Price
  • P4SMA9.1AHE3_A/H Distributor
  • P4SMA9.1AHE3_A/H Supplier
  • P4SMA9.1AHE3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER