Vishay General Semiconductor - Diodes Division P4SMA91AHE3_A/I
- Part No.:
- P4SMA91AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA91AHE3_A/I.pdf
- Description:
- TVS DIODE 77.8VWM 125VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:2,516
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P4SMA91AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features 91 V breakdown voltage (VBR = 86.5–95.5 V at IT = 1.0 mA), 125 V maximum clamping voltage (VC) at 3.2 A peak pulse current (IPPM), and 400 W peak pulse power rating (10/1000 µs waveform). It is AEC-Q101 qualified and RoHS-compliant, targeting automotive and industrial overvoltage protection.
For engineers reviewing the P4SMA91AHE3_A/I datasheet, P4SMA91AHE3_A/I pinout, P4SMA91AHE3_A/I application, or P4SMA91AHE3_A/I equivalent, this page delivers verified electrical parameters, thermal behavior, clamping performance under surge conditions, and direct alternatives with documented differences in standoff voltage, clamping ratio, and automotive qualification status.
Technical Context
The P4SMA91AHE3_A/I operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its specified breakdown range (86.5–95.5 V). Its low incremental surge resistance ensures rapid voltage clamping during transient events such as ESD, inductive switching spikes, or lightning-induced surges.
It is rated for 400 W peak pulse power (10/1000 µs) up to TA = 25 °C, derating linearly above that temperature per Figure 2; maximum junction temperature is 150 °C, and thermal resistance from junction to ambient is 120 °C/W on standard 0.2" × 0.2" copper pads. Polarity is marked by a cathode band on the SMA package body.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 86.5 V / 95.5 V at IT = 1.0 mA - defines precise avalanche onset window for reliable clamping threshold |
| VWM | 77.8 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 125 V at IPPM = 3.2 A - clamped voltage seen by protected circuit during worst-case 10/1000 µs surge |
| PPPM | 400 W (≤ 91 V), 300 W (> 91 V) - peak transient energy absorption capability under standardized surge waveform |
| IFSM | 40 A (8.3 ms half-sine) - surge current handling for unidirectional forward conduction during fault recovery |
| TJ max. | 150 °C - maximum allowable junction temperature; requires thermal design margining for sustained power dissipation |
| RθJA | 120 °C/W - thermal resistance dictates required PCB copper area and airflow for safe operation at PD = 3.3 W |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads; polarity indicated by cathode band on body end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference node | Connected to lower-potential side of protected line; determines unidirectional conduction direction |
| Cathode | Avalanche conduction terminal / Clamping reference | Marked end; connected to higher-potential rail (e.g., VCC or signal line); conducts during overvoltage event |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22 standards |
| 400 W peak pulse power (10/1000 µs) | Enables robust protection against ISO 7637-2 Pulse 1/2a/3a and IEC 61000-4-5 surge events in 12 V/24 V systems |
| Low clamping ratio (VC/VBR ≈ 1.31) | Minimizes overvoltage stress on downstream ICs like microcontrollers, CAN transceivers, and sensor interfaces |
| MSL Level 1 (260 °C peak reflow) | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements |
| Glass passivated junction | Ensures stable breakdown characteristics and long-term reliability under repeated surge stress |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator transients per ISO 7637-2. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBAT and GND to clamp surges above 77.8 V while remaining inert during normal operation. Use Value: Limits voltage seen by downstream DC/DC converters and MCU power rails to ≤125 V, preventing latch-up or permanent damage. |
Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in factory automation PLC modules. IC Role / Device Role / Timing Role: TVS mounted across sensor output and ground to suppress ESD and cable discharge events. Use Value: Maintains signal integrity below 125 V clamping level, preserving 12-bit ADC accuracy and avoiding false triggers in 4–20 mA loops. |
| Telecom Power Supply Input | Consumer Device USB Port Protection |
|
Use Scenario: Input-stage surge suppression for AC/DC adapters powering VoIP phones and base stations. IC Role / Device Role / Timing Role: Primary-side TVS on DC input rail to absorb line-to-ground transients from PoE or shared building wiring. Use Value: Withstands 400 W pulses without degradation, ensuring >100,000 surge cycles per JEDEC JESD22-A114F test conditions. |
Use Scenario: Overvoltage guard on VUSB line of smart home hubs exposed to hot-plug and charger mismatch events. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to system ground, activated only during positive-going overvoltage. Use Value: Fast response (<1 ns) and low leakage (<1 µA at 77.8 V) prevent standby current drain while blocking 8 kV contact ESD per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ90A-E3/52 | Higher VWM = 77.5 V, same VBR range (85.5–94.5 V), SMB package (DO-214AA), 600 W PPPM | Larger footprint; better suited for higher-power board-level protection where space allows | Select when higher surge margin or legacy SMB layout compatibility is required |
| 1.5SMC91AHE3_A | Same VBR/VWM/VC, but SMC (DO-214AB) package, 1500 W PPPM, AEC-Q101 qualified | Higher power handling and larger thermal mass; used in engine control modules and high-reliability industrial drives | Choose for applications demanding >400 W surge capacity or extended thermal endurance under repetitive transients |
Compared with P4SMA91AHE3_A/I, SMBJ90A-E3/52 offers higher peak power in a slightly larger package, while 1.5SMC91AHE3_A provides triple the surge rating in a more thermally robust SMC outline-both retain identical clamping behavior but differ in layout compatibility and system-level energy absorption requirements.
Availability
P4SMA91AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, telecom power supplies, and consumer USB protection requiring stable component supply with AEC-Q101 traceability and RoHS compliance.
Supply support for P4SMA91AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The P4SMA Series targets cost-sensitive, high-volume transient suppression needs in automotive, industrial, and consumer markets, delivering standardized TVS performance in compact surface-mount packages with AEC-Q101 variants for mission-critical use.
FAQ
What is the breakdown voltage tolerance of the P4SMA91AHE3_A/I?
The P4SMA91AHE3_A/I has a specified breakdown voltage range of 86.5 V to 95.5 V at a test current of 1.0 mA, representing a ±5% tolerance around the nominal 91 V rating. This tight VBR window ensures consistent clamping behavior across production lots and supports predictable overvoltage protection design margins in circuits using the P4SMA91AHE3_A/I.
Is the P4SMA91AHE3_A/I suitable for bidirectional transient suppression?
No, the P4SMA91AHE3_A/I is a unidirectional TVS diode, identified by the "A" suffix and cathode band marking. For bidirectional operation, Vishay offers the P4SMA91CA variant. Using the P4SMA91AHE3_A/I in bidirectional applications risks forward conduction during negative transients, potentially damaging the device or failing to protect the circuit - always verify polarity alignment when deploying the P4SMA91AHE3_A/I.
What does the "HE3_A/I" suffix indicate in P4SMA91AHE3_A/I?
The "HE3" denotes RoHS-compliant and AEC-Q101 qualified construction; "A" specifies the revision code per Vishay's internal documentation; "I" indicates packaging in 13-inch tape-and-reel format with 7500 units per reel. This full suffix confirms the P4SMA91AHE3_A/I meets automotive reliability standards and is optimized for high-volume SMT assembly with traceable, halogen-free materials.
How does the P4SMA91AHE3_A/I perform under elevated ambient temperatures?
The P4SMA91AHE3_A/I derates linearly above 25 °C ambient: its 400 W peak pulse power drops to 300 W above 91 V and further decreases per Figure 2 in the datasheet. At 85 °C ambient, usable PPPM falls to ~280 W. Designers must apply thermal derating curves and ensure adequate PCB copper area (0.2" × 0.2" minimum per terminal) to maintain safe junction temperature below 150 °C during surge events involving the P4SMA91AHE3_A/I.
Can the P4SMA91AHE3_A/I replace older P4SMA91A variants without layout changes?
Yes - the P4SMA91AHE3_A/I uses the identical SMA (DO-214AC) package with same mechanical dimensions, pad layout, and polarity marking as legacy P4SMA91A parts. The "HE3" suffix adds AEC-Q101 qualification and RoHS compliance but retains full form-fit-function compatibility, enabling drop-in replacement in existing designs without PCB modification or requalification for the P4SMA91AHE3_A/I.
P4SMA91AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 77.8V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125V
- Current - Peak Pulse (10/1000µs):
- 3.2A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA91AHE3_A/I FAQ
1.How can I place an order for P4SMA91AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA91AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA91AHE3_A/I reliable?
The price and inventory of P4SMA91AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA91AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P4SMA91AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA91AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA91AHE3_A/I?
P4SMA91AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA91AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA91AHE3_A/I?
For technical support, including P4SMA91AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA91AHE3_A/I requirements.
6.How does Aetrix verify that P4SMA91AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P4SMA91AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA91AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P4SMA91AHE3_A/I?
All P4SMA91AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA91AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA91AHE3_A/I part is unused and in its original packaging.
Return procedure for P4SMA91AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA91AHE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

