Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P6KE56AHE3/54

Part No.:
P6KE56AHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-204AC, DO-15, Axial
Datasheet:
AetrixP6KE56AHE3/54.pdf
Description:
TVS DIODE 47.8VWM 77VC DO204AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,650

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P6KE56AHE3/54 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode in DO-15 package, designed for primary-level overvoltage protection of DC power rails and signal lines. It features a 53.2 V minimum breakdown voltage (VBR), 47.8 V maximum stand-off voltage (VWM), 77.0 V clamping voltage (VC) at 7.8 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - deployed in automotive ECU power inputs and industrial sensor interfaces.

For engineers reviewing the P6KE56AHE3/54 datasheet, P6KE56AHE3/54 pinout, P6KE56AHE3/54 application, or P6KE56AHE3/54 equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance data (RθJL = 20 °C/W), DO-15 mechanical dimensions, and real-world clamping behavior under surge conditions - critical for layout-aware transient protection design.

Technical Context

The P6KE56AHE3/54 operates as a silicon avalanche diode with glass-passivated junction, delivering bidirectional-capable clamping only when used in unidirectional configuration with cathode-banded polarity. Its 10/1000 μs surge response achieves full clamping within <1 ns, supported by low incremental surge resistance and 0.057 %/°C temperature coefficient of VBR.

It is rated for 100 A non-repetitive forward surge current (IFSM) at 8.3 ms half-sine, dissipates 5.0 W on infinite heatsink at TL = 75 °C, and maintains operation across -55 °C to +175 °C junction temperature range - enabling use in under-hood automotive environments and high-temperature industrial controllers.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 47.8 V maximum - ensures reliable blocking of normal 48 V rail operation without leakage-induced power loss
VBR (min/max) 53.2 V / 58.8 V at 1.0 mA - defines precise avalanche initiation threshold for predictable clamping onset
VC @ IPPM 77.0 V at 7.8 A (10/1000 μs) - limits downstream IC stress during 600 W transient events
IPPM 7.8 A peak pulse current - quantifies maximum surge energy the device can safely shunt
RθJL 20 °C/W - enables accurate thermal modeling of junction temperature rise during repetitive surges
TJ max. +175 °C - supports placement near heat-generating components in engine control modules
AEC-Q101 Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD

Pinout & Package

Package: DO-15 (DO-204AC), axial leaded, molded epoxy case with matte tin-plated leads compliant to J-STD-002 and JESD 22-B102. Cathode indicated by color band; lead length ≥25.4 mm, body diameter 3.3–3.5 mm.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side reference node Connected to ground or low-voltage return path; establishes clamping reference for positive transients
Cathode Protected line input Connected to power rail or signal line; absorbs positive-going surges via avalanche conduction

Key Features

Feature Design Value
Glass passivated chip junction Enables stable VBR tolerance (±5 %) and long-term parameter stability under thermal cycling
600 W peak pulse power (10/1000 μs) Supports IEC 61000-4-5 Level 4 (4 kV) surge immunity in 48 V systems without derating
AEC-Q101 qualification Validates suitability for automotive powertrain and body electronics per stress test requirements
Low clamping ratio (VC/VBR ≈ 1.45) Minimizes overvoltage margin required for protected ICs, reducing need for oversized voltage ratings
Solder dip 275 °C / 10 s Confirms robustness during wave soldering and reflow processes without parametric shift

Applications

Automotive Power Input Protection Industrial Sensor Signal Line Clamp

Use Scenario: 48 V battery-fed ECU power supply exposed to load dump and alternator ripple.

IC Role / Device Role: Primary overvoltage clamp placed upstream of DC/DC converter input.

Use Value: Limits transient voltage to ≤77.0 V, preventing damage to 80 V-rated input MOSFETs and gate drivers.

Use Scenario: Analog output line (0–10 V) from pressure sensor in factory automation PLC module.

IC Role / Device Role: Point-of-entry TVS on sensor output trace before ADC input.

Use Value: Clamps ESD and inductive kickback to <80 V, preserving 12-bit ADC accuracy and avoiding latch-up.

Telecom DC Power Feeder Consumer Appliance Motor Drive Supply

Use Scenario: -48 V telecom rectifier output feeding base station backplane.

IC Role / Device Role: Unidirectional TVS on negative rail to suppress reverse-polarity connection surges.

Use Value: Withstands 100 A IFSM, protecting downstream PMICs during hot-swap insertion events.

Use Scenario: 24 V DC bus supplying BLDC motor driver in smart washing machine.

IC Role / Device Role: Rail clamp adjacent to half-bridge gate driver IC.

Use Value: Fast <1 ns response prevents shoot-through failure caused by dv/dt-induced Miller turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ58A DO-214AA package, 58 V VBR, 600 W rating, RθJA = 40 °C/W vs. P6KE56AHE3/54's 75 °C/W Suitable for surface-mount layouts; lower thermal resistance but requires PCB copper area for heat dissipation Select SMBJ58A when board space is constrained and SMT assembly is preferred; verify layout thermal relief matches RθJA
1.5KE56A Same DO-15 package, 56 V VBR, but 1500 W peak power, higher IPPM (23.3 A), larger junction capacitance Better for high-energy lightning surges; less suitable for fast-edge ESD due to higher CJ Choose 1.5KE56A where IEC 61000-4-5 combination wave (10/700 μs) compliance is mandatory; avoid in high-frequency signal paths

Compared with SMBJ58A and 1.5KE56A, the P6KE56AHE3/54 offers optimal balance of AEC-Q101 qualification, axial-leaded ease of through-hole prototyping, and precise 47.8 V stand-off for 48 V systems - making it ideal for production automotive modules where qualification and legacy assembly compatibility are prioritized.

Availability

P6KE56AHE3/54 is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, telecom power feeders, and consumer appliance motor drives requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for P6KE56AHE3/54 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor designs discrete semiconductors for power management, circuit protection, and signal conditioning - emphasizing ruggedness, precision, and automotive-grade reliability.

The P6KE series targets cost-sensitive yet reliability-critical transient suppression in DC power systems, with AEC-Q101 variants like P6KE56AHE3/54 engineered specifically for under-hood and industrial control environments.

FAQ

What is the clamping voltage of P6KE56AHE3/54 at its rated peak pulse current?

The P6KE56AHE3/54 has a maximum clamping voltage (VC) of 77.0 V when subjected to its specified 7.8 A peak pulse current (IPPM) using the standard 10/1000 μs waveform. This value is measured per Figure 1 in Vishay document 88369 and defines the upper voltage limit imposed on protected circuits during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.

Is P6KE56AHE3/54 qualified for automotive applications?

Yes, the P6KE56AHE3/54 carries the HE3 suffix, which denotes AEC-Q101 qualification per Vishay's ordering nomenclature. This includes testing for temperature cycling, high-temperature reverse bias (HTRB), and electrostatic discharge - confirming suitability for automotive powertrain, body control, and infotainment modules where reliability under thermal and electrical stress is mandatory.

How does the stand-off voltage (VWM) of P6KE56AHE3/54 relate to typical 48 V system operation?

The P6KE56AHE3/54 has a maximum VWM of 47.8 V, allowing it to remain non-conductive during nominal 48 V rail operation while providing margin against ripple and tolerance drift. This ensures minimal reverse leakage (<1.0 μA) under steady-state conditions, preserving efficiency and preventing false triggering - essential for always-on automotive subsystems.

What is the thermal resistance from junction to lead (RθJL) for P6KE56AHE3/54, and why does it matter?

The P6KE56AHE3/54 has a typical RθJL of 20 °C/W, meaning each watt of surge power raises the junction temperature by ~20 °C above lead temperature. This parameter is vital for predicting thermal runaway risk during repetitive transients and informs heatsinking decisions - especially in enclosed automotive enclosures where ambient temperature exceeds 85 °C.

Can P6KE56AHE3/54 be used in bidirectional configurations?

No - the P6KE56AHE3/54 is a unidirectional TVS diode, identified by its cathode band marking. Bidirectional operation requires the CA-suffixed variant (e.g., P6KE56CA). Using P6KE56AHE3/54 in reverse-biased AC applications would result in forward conduction and potential failure; always match suffix (A = unidirectional, CA = bidirectional) to circuit polarity requirements.

P6KE56AHE3/54 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-204AC, DO-15, Axial
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
47.8V
Voltage - Breakdown (Min):
53.2V
Voltage - Clamping (Max) @ Ipp:
77V
Current - Peak Pulse (10/1000µs):
7.8A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AC (DO-15)

P6KE56AHE3/54 FAQ

1.How can I place an order for P6KE56AHE3/54 through Aetrix?

Please submit a Request for Quotation (RFQ) for P6KE56AHE3/54 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6KE56AHE3/54 reliable?

The price and inventory of P6KE56AHE3/54 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6KE56AHE3/54 is usually 5 days.

3.What payment methods are accepted for P6KE56AHE3/54?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6KE56AHE3/54 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6KE56AHE3/54?

P6KE56AHE3/54 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6KE56AHE3/54 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6KE56AHE3/54?

For technical support, including P6KE56AHE3/54 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6KE56AHE3/54 requirements.

6.How does Aetrix verify that P6KE56AHE3/54 is sourced from the original manufacturer or authorized distributors?

All P6KE56AHE3/54 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6KE56AHE3/54 meets industry standards.

7.What is the process for return or replacement of P6KE56AHE3/54?

All P6KE56AHE3/54 units undergo pre-shipment inspection (PSI). If there is an issue with P6KE56AHE3/54, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6KE56AHE3/54 part is unused and in its original packaging.

Return procedure for P6KE56AHE3/54:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6KE56AHE3/54 Tags

  • P6KE56AHE3/54
  • P6KE56AHE3/54 PDF
  • P6KE56AHE3/54 Datasheet
  • P6KE56AHE3/54 Specifications
  • P6KE56AHE3/54 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P6KE56AHE3/54
  • Buy P6KE56AHE3/54
  • P6KE56AHE3/54 Price
  • P6KE56AHE3/54 Distributor
  • P6KE56AHE3/54 Supplier
  • P6KE56AHE3/54 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER