Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi P6SMB11AT3G

Part No.:
P6SMB11AT3G
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixP6SMB11AT3G.pdf
Description:
TVS DIODE 9.4VWM 15.6VC SMB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,241

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P6SMB11AT3G from ON Semiconductor is a unidirectional 600 W peak power TVS diode designed for transient overvoltage protection in DC power rails and signal lines. It features a 9.5 V working peak reverse voltage (VRWM), 11 V nominal Zener breakdown voltage (VBR) at 1 mA test current, clamping voltage of 14.5 V at 41 A peak pulse current, <5 µA leakage above 10 V, and sub-1 ns response time. It is widely deployed in automotive power supply inputs and industrial I/O interfaces.

For engineers reviewing the P6SMB11AT3G datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM margin vs. operating voltage, clamping ratio (VC/VBR), surge current capability (IPP), thermal derating behavior, and UL 497B certification for isolated loop protection.

Technical Context

The P6SMB11AT3G operates as a silicon avalanche diode with sharp Zener breakdown characteristics, optimized for fast clamping of ESD and lightning-induced transients. Its low zener impedance (<1 Ω typical) and high surge capability (600 W @ 1 ms, 10/1000 µs waveform) enable robust protection without significant voltage overshoot when placed close to protected circuitry.

It is rated for −65 °C to +150 °C operating temperature, qualified to AEC−Q101 for automotive use, and RoHS-compliant with Pb-free SURMETIC® SMB package. The device exhibits <1 ns intrinsic response time and 0.073 %/°C temperature coefficient of VBR, ensuring stable clamping across thermal environments.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM9.5 V - maximum continuous reverse voltage before clamping begins; must exceed system's max DC operating voltage
VBR @ IT=1 mA11.0 V (min) to 11.4 V (max) - precise Zener breakdown threshold defining turn-on sensitivity
VC @ IPP=41 A14.5 V - clamped voltage during worst-case 600 W transient; determines protected circuit's max stress level
IPP41 A - peak pulse current supported at 10/1000 µs waveform; defines surge energy handling capacity
Leakage @ VRWM<5 µA - negligible standby power loss and minimal impact on high-impedance sensing circuits
Response Time<1 ns - ensures clamping initiates before most ICs experience latch-up or gate oxide damage
ESD RatingClass 3 (>16 kV HBM) - meets stringent electrostatic discharge immunity requirements for end-equipment compliance

Pinout & Package

Package: SMB (Case 403A), surface-mount, void-free thermosetting plastic with cathode polarity band. Dimensions: 4.32 mm × 2.30 mm × 1.02 mm (L × W × H); lead finish solderable per J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
AnodeLow-side reference nodeConnected to ground or lowest potential rail; forms return path for transient current
CathodeProtected line inputConnected to line being protected (e.g., 12 V supply rail); clamps to anode during overvoltage

Key Features

FeatureDesign Value
600 W Peak Pulse PowerSupports high-energy surges (e.g., ISO 7637-2 Pulse 5a) without degradation in automotive 12 V systems
UL 497B Recognition (QVGQ2)Validated for isolated loop circuit protection-enables direct use in telecom/data line interface designs
AEC−Q101 QualifiedGuarantees reliability under automotive temperature cycling, humidity, and mechanical stress conditions
Low Clamping Ratio (VC/VBR ≈ 1.32)Minimizes overvoltage stress on downstream ICs compared to higher-ratio alternatives
Pb-Free & RoHS CompliantMeets global environmental regulations and supports lead-free reflow soldering (260 °C / 10 s)

Applications

Automotive Power Input ProtectionIndustrial PLC Digital I/O Protection

Use Scenario: 12 V battery-fed ECUs exposed to load dump (ISO 16750-2) and jump-start transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp positive-going surges.

Use Value: Limits rail voltage to ≤14.5 V during 41 A transients, preventing damage to LDOs, microcontrollers, and CAN transceivers.

Use Scenario: 24 V digital input modules receiving signals from field sensors in noisy factory environments.

IC Role / Device Role / Timing Role: Line-side transient suppressor on each input channel, shunting EFT (IEC 61000-4-4) and surge (IEC 61000-4-5) energy to common ground.

Use Value: Sub-1 ns response ensures clamping occurs before FPGA or microcontroller GPIO pins experience destructive overvoltage.

Medical Equipment Power Supply InputPoint-of-Sale Terminal USB/Serial Port Protection

Use Scenario: AC/DC adapter output feeding sensitive analog front-ends and ADCs in diagnostic devices.

IC Role / Device Role / Timing Role: Secondary-stage TVS after bulk filtering, guarding against conducted transients entering via mains-derived DC rails.

Use Value: UL 497B recognition confirms suitability for patient-connected equipment isolation barriers per IEC 60601-1.

Use Scenario: RS-232 or USB VBUS lines in retail terminals subject to user-handling ESD events.

IC Role / Device Role / Timing Role: Interface-side TVS mounted adjacent to connector, with short trace routing to minimize inductive overshoot.

Use Value: 16 kV HBM rating exceeds IEC 61000-4-2 Level 4 (8 kV contact), ensuring robustness against repeated operator ESD.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ11ASame SMB package, 600 W rating, but VRWM = 9.4 V, VBR = 11.1–12.3 V, VC = 17.0 V @ 35.3 AHigher clamping voltage reduces margin for 12 V rail protection; lower IPP limits surge enduranceSelect when cost sensitivity outweighs clamping performance; verify VC does not exceed downstream IC absolute max ratings
1.5SMC11AHigher-power SMC package (1500 W), VRWM = 9.4 V, VBR = 11.1–12.3 V, VC = 18.2 V @ 82.4 AOver-specified for 600 W needs; larger footprint and higher parasitic inductance may degrade high-frequency responseChoose only if system-level surge testing requires >600 W headroom or legacy board design uses SMC footprint

Compared with SMAJ11A and 1.5SMC11A, the P6SMB11AT3G delivers tighter VBR tolerance (11.0–11.4 V), lower clamping voltage (14.5 V), and optimal 600 W/41 A balance for space-constrained 12 V automotive and industrial applications-without sacrificing AEC−Q101 qualification or UL 497B recognition.

Availability

P6SMB11AT3G is available at Aetrix Electronics and suitable for automotive electronics, industrial programmable logic controllers, and medical power supply designs requiring stable component supply, long-term lifecycle support, and certified transient protection performance.

Supply support for P6SMB11AT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and communications markets.

The P6SMB11AT3G belongs to the P6SMBxxAT3G series of unidirectional TVS diodes engineered specifically for high-reliability DC rail protection where compact size, fast response, and regulatory certifications (UL 497B, AEC−Q101) are mandatory.

FAQ

What is the working peak reverse voltage (VRWM) of the P6SMB11AT3G?

The P6SMB11AT3G has a VRWM of 9.5 V, meaning it remains non-conductive up to this DC or continuous peak reverse voltage. This value ensures compatibility with 12 V automotive and industrial systems where normal operating voltage stays below 9.5 V, allowing safe margin before clamping activation. Exceeding VRWM risks premature conduction and increased leakage.

How does the clamping voltage (VC) of P6SMB11AT3G compare to its breakdown voltage (VBR)?

The P6SMB11AT3G has a nominal VBR of 11.0–11.4 V at 1 mA and a VC of 14.5 V at 41 A peak pulse current, yielding a clamping ratio of ~1.32. This low ratio means the device limits transient overvoltage to just 32% above its breakdown threshold-critical for protecting 12 V-rated ICs that tolerate ≤16 V absolute maximum. The ratio is confirmed in ON Semiconductor's official datasheet Rev. 14.

Is P6SMB11AT3G suitable for automotive applications?

Yes, the P6SMB11AT3G is AEC−Q101 qualified and PPAP capable, making it suitable for automotive applications including body control modules, infotainment power supplies, and ADAS sensor interfaces. Its −65 °C to +150 °C operating range, robust surge capability (600 W @ 1 ms), and UL 497B certification align with automotive EMC and safety requirements such as ISO 7637-2 and ISO 16750-2.

What is the maximum peak pulse current (IPP) rating for P6SMB11AT3G?

The P6SMB11AT3G is rated for a maximum peak pulse current (IPP) of 41 A under the standard 10/1000 µs double-exponential waveform. This corresponds to its 600 W peak power rating and defines the highest transient energy the device can safely divert without failure. Derating applies above 25 °C ambient, per Figure 3 in the ON Semiconductor datasheet.

Does P6SMB11AT3G have UL recognition, and for what standard?

Yes, the P6SMB11AT3G carries UL recognition under file #E210057 for standard UL 497B, specifically classified in the "Protectors" category (QVGQ2). This validates its suitability for isolated loop circuit protection in telecom, industrial control, and medical equipment-covering tests including strike voltage breakdown, endurance conditioning, and dielectric withstand, beyond basic flammability compliance.

P6SMB11AT3G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
DO-214AA, SMB
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
9.4V
Voltage - Breakdown (Min):
10.5V
Voltage - Clamping (Max) @ Ipp:
15.6V
Current - Peak Pulse (10/1000µs):
38A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
1550pF @ 1MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SMB

P6SMB11AT3G FAQ

1.How can I place an order for P6SMB11AT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB11AT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB11AT3G reliable?

The price and inventory of P6SMB11AT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB11AT3G is usually 5 days.

3.What payment methods are accepted for P6SMB11AT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB11AT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB11AT3G?

P6SMB11AT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB11AT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB11AT3G?

For technical support, including P6SMB11AT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB11AT3G requirements.

6.How does Aetrix verify that P6SMB11AT3G is sourced from the original manufacturer or authorized distributors?

All P6SMB11AT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB11AT3G meets industry standards.

7.What is the process for return or replacement of P6SMB11AT3G?

All P6SMB11AT3G units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB11AT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB11AT3G part is unused and in its original packaging.

Return procedure for P6SMB11AT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB11AT3G Tags

  • P6SMB11AT3G
  • P6SMB11AT3G PDF
  • P6SMB11AT3G Datasheet
  • P6SMB11AT3G Specifications
  • P6SMB11AT3G Images
  • onsemi
  • onsemi P6SMB11AT3G
  • Buy P6SMB11AT3G
  • P6SMB11AT3G Price
  • P6SMB11AT3G Distributor
  • P6SMB11AT3G Supplier
  • P6SMB11AT3G Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER