My Inquiry
My Account
Taiwan Semiconductor Corporation P6SMB12AH
- Part No.:
- P6SMB12AH
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB12AH.pdf
- Description:
- TVS DIODE 10.2VWM 16.7VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,168
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB12AH from Taiwan Semiconductor is a unidirectional 600W surface-mount Transient Voltage Suppressor (TVS) diode with a breakdown voltage range of 11.4–12.6 V, clamping voltage of 16.7 V at 37 A peak pulse current, and stand-off voltage of 10.2 V - designed for automotive-grade ESD and load-dump protection in power supply rails and signal lines.
For engineers reviewing the P6SMB12AH datasheet, P6SMB12AH pinout, P6SMB12AH application, or P6SMB12AH equivalent, this device offers AEC-Q101 qualification, ISO 7637-2 Pulse 1/2a/2b/3a/3b compliance, <1 µA reverse leakage above 10.2 V, and sub-1 ps response time - critical for robust transient immunity in automotive body control modules and industrial sensor interfaces.
Technical Context
The P6SMB12AH employs a glass-passivated silicon junction optimized for fast clamping under 10/1000 µs surge waveforms. Its thermal design supports 150°C maximum junction temperature with RθJA = 55°C/W and RθJC = 10°C/W, enabling reliable operation in high-ambient environments without forced cooling.
It operates as a unidirectional clamp with cathode-band polarity marking, rated for 100 A non-repetitive forward surge (8.3 ms half-sine), and exhibits a VBR temperature coefficient of 0.078%/°C - ensuring stable breakdown across automotive temperature ranges (−55°C to +150°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 11.4 V / 12.6 V - defines guaranteed conduction onset under surge conditions; ensures clamping initiates before downstream IC damage thresholds. |
| VWM | 10.2 V - maximum continuous reverse voltage the device blocks without significant leakage; sets safe operating margin below breakdown. |
| VC @ IPPM | 16.7 V at 37 A - peak clamped voltage during 10/1000 µs transient; determines worst-case overvoltage seen by protected circuitry. |
| PPPSM | 600 W - non-repetitive peak pulse power rating; defines single-event surge energy absorption capability. |
| IR @ VWM | <1 µA - ultra-low reverse leakage at stand-off voltage; minimizes standby power loss and avoids false triggering in high-impedance nodes. |
| TJ max | +150°C - maximum junction temperature; enables use in under-hood automotive locations and thermally constrained PCB layouts. |
| Package | DO-214AA (SMB) - industry-standard surface-mount outline with 0.090 g mass and J-STD-002 solderable matte tin leads. |
Pinout & Package
Package: DO-214AA (SMB), molded plastic case with cathode band marking on one end; terminals are matte tin-plated leads compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / low-side reference | Connected to ground or low-voltage rail; establishes reference for unidirectional clamping action. |
| Cathode | Transient voltage input / high-side connection | Connected to protected line (e.g., 12 V battery rail); conducts surge current to ground when VAK exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTOL, TC, HAST, and UHAST - suitable for engine control units and ADAS power domains. |
| Glass passivated junction | Enhances long-term reliability and moisture resistance vs. epoxy-passivated alternatives; maintains stable VBR after humidity exposure per J-STD-020 Level 1. |
| ISO 7637-2 compliance | Withstands Pulse 1 (inductive load dump), Pulse 2a/2b (switching transients), and Pulse 3a/3b (capacitive coupling) - meets OEM-level EMC immunity specs. |
| Fast response time | <1.0 ps rise time from 0 V to VBR(min) - clamps before most microcontroller I/O pins can be damaged by ESD or lightning-induced surges. |
| Low profile SMB package | Height ≤1.75 mm; enables placement in space-constrained areas such as connector interfaces and PCB edge zones without interference with shields or enclosures. |
Applications
| Automotive Body Control Module (BCM) | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Protecting LIN bus transceivers and microcontroller GPIOs from load-dump spikes and ESD events in door module PCBs. IC Role / Device Role: Unidirectional TVS clamp placed between LIN line and ground, referenced to vehicle chassis. Use Value: Limits transient voltage to ≤16.7 V during 10/1000 µs pulses up to 37 A, preventing latch-up or gate oxide rupture in 5 V tolerant transceivers. |
Use Scenario: Safeguarding 4–20 mA current-loop analog inputs in PLC I/O modules exposed to field wiring transients. IC Role / Device Role: Standoff protector on loop supply rail, absorbing induced surges before they reach precision op-amps and ADC front-ends. Use Value: Maintains <1 µA leakage at 10.2 V, avoiding offset errors in µA-level current measurement paths while clamping to 16.7 V under fault. |
| Automotive Lighting Driver | Power Supply Input Stage |
Use Scenario: Shielding LED driver ICs from battery reverse-polarity and jump-start surges in headlamp assemblies. IC Role / Device Role: Primary overvoltage clamp on 12 V input rail, positioned upstream of DC-DC converters and gate drivers. Use Value: Withstands 100 A 8.3 ms forward surge per JESD22-A112, surviving jump-start faults without degradation or short-circuit failure. |
Use Scenario: Front-end transient suppression for 12 V DC input of embedded computing modules in telematics gateways. IC Role / Device Role: First-line defense against ISO 7637-2 Pulse 1 (load dump) and ESD ±15 kV air discharge. Use Value: Delivers 600 W peak power handling in compact SMB footprint, eliminating need for larger DO-214AB or axial packages in dense layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12A | Same DO-214AA package; VBR = 13.3–14.7 V, VC = 19.9 V @ 30.1 A, PPPSM = 600 W - higher clamping voltage and wider VBR tolerance. | Less precise clamping margin for 12 V systems near IC absolute maximum ratings; better suited for 13.5 V nominal rails. | Select SMBJ12A only if system VMAX allows ≥19.9 V transient excursion and tighter VBR control is not required. |
| 1.5SMC12A | DO-214AB (SMC) package; VBR = 12.4–13.7 V, VC = 19.0 V @ 31.6 A, PPPSM = 1500 W - larger footprint, higher power, higher clamping. | Requires PCB redesign due to 2.54 mm lead spacing and 2.5 mm height; used where >600 W single-pulse energy is expected. | Choose 1.5SMC12A only when surge duty cycle or energy level exceeds P6SMB12AH's 600 W rating and board space permits SMC layout. |
Compared with SMBJ12A and 1.5SMC12A, the P6SMB12AH provides tighter VBR (11.4–12.6 V), lower clamping (16.7 V), and DO-214AA compatibility - making it optimal for space-limited 12 V automotive nodes requiring precise overvoltage control without sacrificing AEC-Q101 assurance.
Availability
P6SMB12AH is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, lighting driver protection, and power supply input stages requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for P6SMB12AH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, TVS diodes, rectifiers, and MOSFETs - with global distribution and AEC-Q101 validation capabilities.
The P6SMB12AH belongs to TSC's P6SMBx(A)H family of automotive-grade TVS diodes, engineered specifically for ISO 7637-2 compliance and under-hood deployment in 12 V and 24 V vehicle subsystems.
FAQ
What is the polarity configuration of the P6SMB12AH?
The P6SMB12AH is a unidirectional TVS diode with cathode-band marking indicating the cathode terminal. It conducts only when the cathode is at a higher potential than the anode - making it suitable for protecting positive-rail circuits like 12 V battery feeds. The device does not conduct in reverse bias until breakdown voltage is exceeded, and its electrical characteristics apply solely in the forward-clamping direction.
Does the P6SMB12AH meet AEC-Q101 requirements for automotive use?
Yes, the P6SMB12AH is explicitly AEC-Q101 qualified per the manufacturer's documentation. This includes passing stress tests for high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and mechanical shock - confirming suitability for automotive powertrain, body, and infotainment applications where reliability under thermal and vibration stress is mandatory.
What is the maximum clamping voltage of the P6SMB12AH under standard test conditions?
The P6SMB12AH has a maximum clamping voltage (VC) of 16.7 V when subjected to its rated peak pulse current (IPPM) of 37 A using the 10/1000 µs waveform. This value is measured at TA = 25°C and represents the worst-case voltage imposed on the protected circuit during a standardized surge event - critical for verifying compatibility with downstream IC absolute maximum ratings.
Can the P6SMB12AH be used in bidirectional configurations?
No, the P6SMB12AH is strictly unidirectional. For bidirectional transient suppression, Taiwan Semiconductor specifies variants with "CH" or "CAH" suffixes (e.g., P6SMB12AH is unidirectional; P6SMB12CAH would be bidirectional). Using P6SMB12AH in reverse-biased AC applications risks permanent failure, as it lacks symmetrical breakdown characteristics in both polarities.
What packaging and reel quantity is offered for the P6SMB12AH?
The P6SMB12AH is supplied in DO-214AA (SMB) package on tape-and-reel format, with 3,000 units per reel. The tape complies with EIA-481 standards, and the reels are compatible with standard SMT pick-and-place equipment - supporting high-volume automated assembly without manual handling or rework.
P6SMB12AH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10.2V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.7V
- Current - Peak Pulse (10/1000µs):
- 37A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB12AH FAQ
1.How can I place an order for P6SMB12AH through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB12AH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB12AH reliable?
The price and inventory of P6SMB12AH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB12AH is usually 5 days.
3.What payment methods are accepted for P6SMB12AH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB12AH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB12AH?
P6SMB12AH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB12AH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB12AH?
For technical support, including P6SMB12AH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB12AH requirements.
6.How does Aetrix verify that P6SMB12AH is sourced from the original manufacturer or authorized distributors?
All P6SMB12AH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB12AH meets industry standards.
7.What is the process for return or replacement of P6SMB12AH?
All P6SMB12AH units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB12AH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB12AH part is unused and in its original packaging.
Return procedure for P6SMB12AH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB12AH Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
