Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi P6SMB43AT3

Part No.:
P6SMB43AT3
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
-
Datasheet:
AetrixP6SMB43AT3.pdf
Description:
TVS ZENER UNIDIR 600W 43V SMB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,244

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P6SMB43AT3 from ON Semiconductor is a unidirectional 600 W transient voltage suppressor (TVS) diode designed for parallel overvoltage protection of sensitive electronics. It features a 36.8 V working peak reverse voltage (VRWM), 43.05 V nominal breakdown voltage (VBR) at 1 mA test current, and clamps transients to 59.3 V at 10.1 A peak pulse current (IPP), making it suitable for DC power rail protection in industrial power supplies and automotive ECUs.

For engineers reviewing the P6SMB43AT3 datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM margin above operating voltage, clamping voltage vs. device withstand rating, surge current capability under 1 ms 10/1000 µs waveform, and UL 497B recognition for isolated loop circuit protection.

Technical Context

The P6SMB43AT3 operates as a silicon avalanche diode with fast <1 ns response time and low zener impedance, enabling effective suppression of ESD and lightning-induced surges. Its unidirectional polarity and cathode-band marking define anode-cathode orientation for correct placement across protected lines.

Thermal performance is characterized by 226 °C/W junction-to-ambient thermal resistance (RJA) on FR-4 board with minimum footprint, and 40 °C/W junction-to-lead (RJL) with 1″ copper pad - critical for sustained surge handling and PCB layout planning.

Key Specifications

Parameter Value and Actual Design Meaning
VRWM 36.8 V - maximum continuous reverse operating voltage; must be ≥ system DC bus or signal swing to avoid leakage conduction
VBR @ IT = 1 mA 43.05 V (nominal) - precise avalanche onset point; defines threshold where clamping begins under controlled test conditions
VC @ IPP = 10.1 A 59.3 V - maximum clamped voltage during 1 ms 10/1000 µs surge; determines peak stress on downstream components
PPK 600 W - peak pulse power rating at TL = 25°C; derates to ~40% at 100°C ambient per Figure 3
IR @ VRWM 5 µA - reverse leakage current at rated VRWM; ensures minimal standby power loss and signal integrity in high-impedance circuits
ESD Rating Class 3 (>16 kV HBM) - qualifies for robust electrostatic discharge immunity in handling and end-use environments
UL Recognition UL 497B QVGQ2 - certified for isolated loop circuit protection, including strike voltage, endurance, and dielectric withstand testing

Pinout & Package

Package: SMB (Case 403A), surface-mount, Pb-free, void-free thermosetting plastic with modified L-bend leads and cathode polarity band.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side reference terminal Connected to ground or lower-potential node; forms current path during reverse-biased avalanche conduction
Cathode High-side transient clamp node Connected to protected line (e.g., 24 V rail); carries full surge current into ground via anode during clamping event

Key Features

Feature Design Value
600 W peak pulse power Supports IEC 61000-4-5 Level 4 (4 kV/2 Ω) surge immunity on 24 V systems without external series impedance
<1 ns response time Minimizes voltage overshoot before clamping engages, reducing risk of damage to ICs with <100 ns input tolerance
UL 497B certification Validates compliance for telecom and industrial isolated loop interfaces, eliminating need for separate safety qualification
Low leakage (<5 µA) Enables use in battery-backed or low-power sensor nodes without degrading quiescent current budget
SURMETIC® package reliability Proven moisture resistance and solderability per J-STD-020; supports reflow profiles up to 260°C for 10 s

Applications

Industrial Power Supply Protection Automotive Body Control Module

Use Scenario: 24 V DC input rail in programmable logic controller (PLC) power supply exposed to load dump and inductive switching transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between +24 V and GND to clamp surges exceeding 36.8 V before they reach DC-DC converters and microcontrollers.

Use Value: Limits transient voltage to ≤59.3 V at 10.1 A, protecting downstream 36 V-rated input stages without requiring oversized input capacitors or series resistors.

Use Scenario: LIN bus line and 12 V auxiliary power rail in body control module subject to ISO 7637-2 Pulse 1, 2a, and 5a.

IC Role / Device Role / Timing Role: Standoff protection device mounted directly at connector entry point to shunt energy before reaching LIN transceivers and MCU I/O pins.

Use Value: Achieves <1 ns response and UL 497B compliance, meeting OEM requirements for ECU-level surge immunity without additional filtering stages.

Medical Equipment Input Stage Telecom Remote Terminal Unit

Use Scenario: AC/DC adapter output stage feeding isolated DC rails in patient-connected diagnostic equipment with strict leakage limits.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on secondary-side 5 V/12 V outputs, positioned after isolation barrier to protect analog front-end and digital logic.

Use Value: 5 µA max leakage at VRWM preserves low-power sleep modes and avoids false triggers in high-impedance sensor bias networks.

Use Scenario: 48 V phantom power line in remote terminal unit (RTU) for DSLAM or fiber access equipment, exposed to lightning-induced surges on outdoor cabling.

IC Role / Device Role / Timing Role: First-line protection on powered line entering enclosure, coordinated with gas discharge tube (GDT) upstream for staged clamping.

Use Value: 600 W rating and 59.3 V clamping enable coordination with 90 V GDTs to limit let-through energy below 100 mJ for Class B telecom surge standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ43A Same SMB package, identical VRWM (36.8 V), but higher VC = 63.5 V at IPP = 9.4 A; 500 W PPK rating Lower surge margin in high-current events; requires verification against IEC 61000-4-5 waveform tail energy Select when cost sensitivity outweighs 4.2 V clamping voltage penalty and system withstand rating exceeds 63.5 V
1.5SMC43A Higher power (1500 W), DO-214AB package (larger footprint), VRWM = 36.8 V, VC = 63.5 V @ 23.5 A Requires PCB redesign; suited for legacy designs with space allowance and higher surge exposure (e.g., outdoor base stations) Choose only if existing layout accommodates larger case or system demands >600 W single-pulse capability

Compared with SMBJ43A and 1.5SMC43A, the P6SMB43AT3 delivers optimal balance of compact SMB footprint, UL 497B certification, and 59.3 V clamping - critical for space-constrained industrial and automotive modules where both safety compliance and voltage headroom are design constraints.

Availability

P6SMB43AT3 is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, medical equipment input stages, and telecom remote terminal units requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for P6SMB43AT3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (now onsemi) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and medical markets.

The P6SMB43AT3 belongs to the P6SMBxxAT3 series of 600 W unidirectional TVS diodes engineered for robust transient suppression in harsh environments - targeting applications demanding UL 497B recognition, low leakage, and reliable SMB-packaged surge handling.

FAQ

What is the working peak reverse voltage (VRWM) of the P6SMB43AT3?

The P6SMB43AT3 has a VRWM of 36.8 V, meaning it can continuously block up to this voltage in reverse bias without significant leakage. This value is selected to provide ≥10% margin above common 33 V or 36 V DC rails while ensuring low standby current (<5 µA) - a key requirement for P6SMB43AT3 deployments in always-on industrial controllers.

How does the clamping voltage VC of the P6SMB43AT3 compare to its breakdown voltage VBR?

The P6SMB43AT3 exhibits a VBR of 43.05 V (nominal) at 1 mA test current, while its VC is 59.3 V at 10.1 A peak pulse current. This 16.25 V difference reflects the dynamic impedance rise under surge conditions - a critical parameter for verifying that downstream components rated for 60 V maximum can survive the full clamping event without overstress.

Is the P6SMB43AT3 RoHS-compliant and lead-free?

Yes, the "G" suffix in P6SMB43AT3 indicates a Pb-free package compliant with RoHS Directive 2011/65/EU. The device uses ON Semiconductor's SURMETIC® molding compound and meets JEDEC J-STD-020 moisture sensitivity level 1, supporting standard lead-free reflow profiles up to 260°C for 10 seconds.

What is the maximum peak pulse current (IPP) rating for the P6SMB43AT3?

The P6SMB43AT3 is rated for 10.1 A peak pulse current (IPP) under the standard 10/1000 µs double-exponential waveform. This value is derived from its 600 W peak power rating and 59.3 V clamping voltage (IPP = PPK / VC), and is validated per Figure 2 and Figure 3 in the official datasheet for P6SMB43AT3.

Does the P6SMB43AT3 have UL recognition, and for what standard?

Yes, the P6SMB43AT3 carries UL 497B recognition under file E210057, specifically for isolated loop circuit protection. This certification covers rigorous testing including strike voltage breakdown, endurance conditioning, temperature cycling, dielectric withstand, and discharge - confirming suitability for P6SMB43AT3 use in telecom, industrial, and medical isolated interfaces.

P6SMB43AT3 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
-
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
-
Unidirectional Channels:
-
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
-
Voltage - Breakdown (Min):
-
Voltage - Clamping (Max) @ Ipp:
-
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
-
Power Line Protection:
-
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

P6SMB43AT3 FAQ

1.How can I place an order for P6SMB43AT3 through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB43AT3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB43AT3 reliable?

The price and inventory of P6SMB43AT3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB43AT3 is usually 5 days.

3.What payment methods are accepted for P6SMB43AT3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB43AT3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB43AT3?

P6SMB43AT3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB43AT3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB43AT3?

For technical support, including P6SMB43AT3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB43AT3 requirements.

6.How does Aetrix verify that P6SMB43AT3 is sourced from the original manufacturer or authorized distributors?

All P6SMB43AT3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB43AT3 meets industry standards.

7.What is the process for return or replacement of P6SMB43AT3?

All P6SMB43AT3 units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB43AT3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB43AT3 part is unused and in its original packaging.

Return procedure for P6SMB43AT3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB43AT3 Tags

  • P6SMB43AT3
  • P6SMB43AT3 PDF
  • P6SMB43AT3 Datasheet
  • P6SMB43AT3 Specifications
  • P6SMB43AT3 Images
  • onsemi
  • onsemi P6SMB43AT3
  • Buy P6SMB43AT3
  • P6SMB43AT3 Price
  • P6SMB43AT3 Distributor
  • P6SMB43AT3 Supplier
  • P6SMB43AT3 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER