Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Taiwan Semiconductor Corporation P6SMB82AH

Part No.:
P6SMB82AH
Manufacturer:
Taiwan Semiconductor Corporation
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixP6SMB82AH.pdf
Description:
TVS DIODE 70.1VWM 113VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,214

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P6SMB82AH from Taiwan Semiconductor is a unidirectional 600W surface-mount Transient Voltage Suppressor (TVS) diode with a nominal breakdown voltage of 77.9–86.1 V, clamping voltage of 113 V at 5.5 A peak pulse current, and stand-off voltage of 70.1 V. It features glass-passivated junction, AEC-Q101 qualification, and DO-214AA (SMB) package for automotive ESD and load-dump protection.

For engineers reviewing the P6SMB82AH datasheet, P6SMB82AH pinout, P6SMB82AH application, or P6SMB82AH equivalent, key selection criteria include its 113 V clamping performance under 10/1000 µs surge, <1 µA leakage at 70.1 V, and compliance with ISO 7637-2 Pulse 1/2a/2b/3a/3b for automotive electronics robustness.

Technical Context

The P6SMB82AH operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its minimum breakdown voltage (77.9 V) at 1 mA test current. Its fast response time (<1.0 ps) ensures suppression before transient energy damages downstream ICs.

Thermal design relies on RθJC = 10 °C/W and RθJA = 55 °C/W, enabling reliable operation up to TJ = 150 °C. The device sustains non-repetitive 600 W peak pulse power per 10/1000 µs waveform and handles 100 A forward surge current (8.3 ms half-sine).

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/max)77.9 V / 86.1 V - defines guaranteed avalanche initiation range at 1 mA, critical for precise overvoltage threshold setting
VWM70.1 V - maximum continuous reverse operating voltage; ensures no conduction during normal system operation
VC @ IPPM113 V at 5.5 A - clamped voltage during worst-case 10/1000 µs transient; determines protected circuit's maximum stress level
PPPSM600 W - peak pulse power handling capacity; supports high-energy automotive load-dump events
IR @ VWM<1 µA - ultra-low reverse leakage preserves battery life in always-on automotive modules
TJ max+150 °C - enables under-hood deployment without derating in engine control units and body controllers
PackageDO-214AA (SMB) - industry-standard SMT footprint compatible with automated placement and reflow soldering

Pinout & Package

DO-214AA (SMB) surface-mount package with cathode band marking; two-terminal unidirectional configuration. Matte tin-plated leads meet J-STD-002 solderability requirements.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry / transient return pathConnected to ground or low-impedance return plane; completes clamping loop during surge
CathodeProtected line connectionConnected to supply rail (e.g., 12 V or 24 V bus); conducts avalanche current when VAK > VBR

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress test plan
Glass passivated junctionEnhances long-term stability and moisture resistance vs. epoxy-passivated alternatives in humid environments
ISO 7637-2 complianceWithstands Pulse 1 (inductive load dump), Pulse 2a/2b (switching transients), and Pulse 3a/3b (ESD-coupled noise) waveforms
Low profile SMB packageHeight ≤ 2.6 mm enables use in space-constrained ECUs and ADAS sensor modules
Junction-to-case thermal resistanceRθJC = 10 °C/W - supports direct thermal coupling to PCB copper pour for improved power dissipation

Applications

Automotive Power Rail ProtectionIndustrial Sensor Interface Protection

Use Scenario: 12 V/24 V battery-fed microcontroller power input in engine control unit exposed to load-dump transients up to 35 V.

IC Role / Device Role: Primary TVS clamp on main supply rail, diverting surge current away from LDO regulators and MCU VDD.

Use Value: Clamps to 113 V within <1 ps, limiting stress on 16 V-rated input capacitors and preventing brownout-induced MCU reset.

Use Scenario: RS-485 transceiver data lines in factory automation PLC I/O module subject to EFT bursts per IEC 61000-4-4.

IC Role / Device Role: Secondary-level TVS on signal lines, placed after common-mode choke to suppress differential-mode surges.

Use Value: Sub-1 µA leakage avoids DC bias shift on 120 Ω termination; 113 V clamping prevents transceiver latch-up during 4 kV EFT events.

LED Lighting Driver Input ProtectionDC-DC Converter Input Stage Protection

Use Scenario: Constant-current LED driver in commercial vehicle headlamp subjected to ISO 16750-2 jump-start pulses (up to 24 V).

IC Role / Device Role: Front-end TVS on buck converter input, upstream of input capacitor and controller IC.

Use Value: Withstands repetitive 600 W pulses without degradation; 70.1 V VWM allows full 24 V operation while blocking false triggering.

Use Scenario: 48 V-to-12 V isolated DC-DC converter in telecom power shelf exposed to lightning-induced surges on primary side.

IC Role / Device Role: Bulk transient suppressor across primary winding input, coordinated with MOV and fuse.

Use Value: 113 V clamping voltage aligns with 150 V MOSFET VDSS rating, ensuring FET remains within SOA during 10/1000 µs transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ82ASame DO-214AA package; VBR = 91.1–100.9 V, VC = 131 V @ 4.6 A, PPPSM = 600 WHigher clamping voltage increases stress on downstream 100 V-rated componentsSelect when higher VBR tolerance is needed to avoid nuisance clamping near 82 V nominal rails
1.5SMC82ADO-214AB (SMC) package; VBR = 91.1–100.9 V, VC = 131 V @ 4.6 A, PPPSM = 1500 WLarger footprint and higher power rating suit industrial mains-input stages, not space-constrained automotive PCBsChoose for higher surge endurance where board area permits and 1500 W rating is required

Compared with SMBJ82A and 1.5SMC82A, the P6SMB82AH offers tighter VBR (77.9–86.1 V) and lower clamping (113 V), making it optimal for precision 82 V threshold protection in automotive modules where layout space and thermal constraints are critical.

Availability

P6SMB82AH is available at Aetrix Electronics and suitable for automotive ECU power rail protection, industrial sensor interface hardening, and LED driver input surge suppression requiring stable component supply across production lifecycles.

Supply support for P6SMB82AH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The P6SMB82AH belongs to TSC's AEC-Q101-qualified P6SMBx(A)H series of 600 W SMB-packaged TVS diodes, engineered specifically for robust transient immunity in automotive power distribution and electronic control systems.

FAQ

What is the breakdown voltage range for P6SMB82AH?

The P6SMB82AH has a guaranteed breakdown voltage range of 77.9 V to 86.1 V at 1 mA test current, measured per ANSI/IEEE C62.35. This tight VBR window ensures consistent clamping behavior across production lots and supports precise overvoltage threshold design in 82 V nominal systems. The P6SMB82AH's VBR is validated during 100% production testing.

Is P6SMB82AH unidirectional or bidirectional?

The P6SMB82AH is a unidirectional TVS diode, indicated by the absence of "C" or "CA" prefix in its part number and confirmed by its single cathode band marking. It conducts only during reverse-biased overvoltage events and blocks forward current like a standard rectifier diode. Bidirectional variants (e.g., P6SMB82CAH) are available separately for AC-line or differential-signal protection.

Does P6SMB82AH meet automotive reliability standards?

Yes, the P6SMB82AH is AEC-Q101 qualified and meets ISO 7637-2 Pulse 1, 2a, 2b, 3a, and 3b test requirements for automotive electrical disturbances. Its glass-passivated junction, JESD201 Class 2 whisker resistance, and moisture sensitivity level 1 rating further validate its suitability for under-hood and chassis-mounted automotive applications. The P6SMB82AH's qualification data is documented in Taiwan Semiconductor's official AEC-Q101 report.

What is the maximum clamping voltage of P6SMB82AH under surge conditions?

The P6SMB82AH clamps to a maximum of 113 V when subjected to its rated 5.5 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured at TA = 25°C and represents the upper limit of voltage seen by protected circuitry during worst-case transient events. Derating applies above 25°C ambient per the pulse derating curve in the P6SMB82AH datasheet.

Can P6SMB82AH be used in DC-DC converter input protection?

Yes, the P6SMB82AH is commonly deployed for input-stage transient protection in DC-DC converters, especially in automotive 12 V/24 V systems. Its 70.1 V stand-off voltage allows safe operation across nominal input ranges, while its 113 V clamping voltage aligns with 150 V-rated MOSFETs and input capacitors. The P6SMB82AH's low leakage (<1 µA) prevents efficiency loss in always-on converter standby modes.

P6SMB82AH Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Package/Case:
DO-214AA, SMB
Series:
P6SMB
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
70.1V
Voltage - Breakdown (Min):
77.9V
Voltage - Clamping (Max) @ Ipp:
113V
Current - Peak Pulse (10/1000µs):
5.5A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

P6SMB82AH FAQ

1.How can I place an order for P6SMB82AH through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB82AH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB82AH reliable?

The price and inventory of P6SMB82AH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB82AH is usually 5 days.

3.What payment methods are accepted for P6SMB82AH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB82AH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB82AH?

P6SMB82AH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB82AH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB82AH?

For technical support, including P6SMB82AH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB82AH requirements.

6.How does Aetrix verify that P6SMB82AH is sourced from the original manufacturer or authorized distributors?

All P6SMB82AH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB82AH meets industry standards.

7.What is the process for return or replacement of P6SMB82AH?

All P6SMB82AH units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB82AH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB82AH part is unused and in its original packaging.

Return procedure for P6SMB82AH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB82AH Tags

  • P6SMB82AH
  • P6SMB82AH PDF
  • P6SMB82AH Datasheet
  • P6SMB82AH Specifications
  • P6SMB82AH Images
  • Taiwan Semiconductor Corporation
  • Taiwan Semiconductor Corporation P6SMB82AH
  • Buy P6SMB82AH
  • P6SMB82AH Price
  • P6SMB82AH Distributor
  • P6SMB82AH Supplier
  • P6SMB82AH Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER