onsemi P6SMB8.2AT3G

Overview

P6SMB8.2AT3G from ON Semiconductor is a unidirectional 600 W peak power TVS diode designed for transient overvoltage protection in DC power rails and signal lines. It features a 7.02 V working peak reverse voltage (VRWM), 8.2 V nominal Zener breakdown voltage (VBR) at 10 mA test current, clamps to 12.1 V at 50 A peak pulse current (IPP), and delivers sub-1 ns response time with <500 nA leakage above VRWM. It is widely deployed in automotive power supply inputs and industrial sensor interfaces.

For engineers reviewing the P6SMB8.2AT3G datasheet, pinout, applications, or equivalent options, key selection criteria include clamping voltage margin relative to protected IC VDD, surge current capability under IEC 61000-4-5 waveforms, UL 497B certification for loop circuit protection, and SMB package thermal performance on FR-4 PCBs.

Technical Context

The P6SMB8.2AT3G operates as a unidirectional avalanche clamp, conducting only during positive transients relative to its cathode. Its low zener impedance (<1 Ω typical) ensures stable clamping across 10–50 A surge currents, while its 2015 pF junction capacitance at 0 V bias minimizes signal distortion in low-speed analog or power-line applications.

Designed for non-repetitive 1 ms pulses per IEC 61000-4-5, it sustains 600 W peak power at TL = 25°C with thermal derating to 0.55 W at TA = 25°C. Its AEC-Q101 qualification confirms suitability for automotive environments, and UL 497B recognition validates use in isolated telecom and process control loop protection.

Key Specifications

Pinout & Package

SMB (Case 403A) is a surface-mount plastic package with cathode indicated by a polarity band. Leads are modified L-bend for increased pad contact area and solderability. Maximum soldering temperature is 260°C for 10 seconds.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMAJ8.0A and 1.5SMC8.2A, the P6SMB8.2AT3G delivers optimal balance of 600 W surge capacity, SMB footprint density, and UL 497B certification-making it preferred for space-constrained automotive and medical power rail protection where certification and reliability are mandatory.

Availability

P6SMB8.2AT3G is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, medical power supplies, and point-of-sale terminal designs requiring stable component supply and long-term lifecycle support.

Supply support for P6SMB8.2AT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and connectivity solutions for automotive, industrial, and consumer markets.

The P6SMB8.2AT3G belongs to ON Semiconductor's SURMETIC® SMB TVS family, engineered specifically for high-reliability transient suppression in harsh environments-including automotive power systems and certified industrial control loops.

FAQ

What is the maximum clamping voltage of the P6SMB8.2AT3G under surge conditions?

The P6SMB8.2AT3G clamps to a maximum of 12.1 V when subjected to a 50 A peak pulse current (IPP), as defined by the 8.3 ms half-sine waveform per IEC 61000-4-5. This value is measured at TJ = 25°C and represents the upper limit of voltage seen by downstream components during worst-case surge events. The P6SMB8.2AT3G maintains this clamping performance across its qualified operating temperature range.

Is the P6SMB8.2AT3G suitable for bidirectional transient protection?

No, the P6SMB8.2AT3G is a unidirectional TVS diode and conducts only during positive voltage excursions relative to its cathode. For bidirectional protection, ON Semiconductor offers the P6SMB8.2CAT3G variant. Using the P6SMB8.2AT3G in reverse-biased configurations may result in permanent breakdown or failure, as it lacks reverse avalanche capability. Always verify polarity during layout placement of the P6SMB8.2AT3G.

Does the P6SMB8.2AT3G meet automotive qualification standards?

Yes, the P6SMB8.2AT3G is AEC-Q101 qualified and PPAP capable, confirming its suitability for automotive applications including engine control units, body electronics, and infotainment power supplies. Its operating temperature range of −65°C to +150°C, robust surge performance, and SURMETIC® package reliability have been validated per AEC-Q101 stress test requirements. The P6SMB8.2AT3G is explicitly listed in ON Semiconductor's AEC-Q101 qualified TVS portfolio.

What is the leakage current specification for the P6SMB8.2AT3G at its rated VRWM?

At its working peak reverse voltage (VRWM) of 7.02 V, the P6SMB8.2AT3G exhibits a maximum reverse leakage current of 200 nA at TA = 25°C. This ultra-low leakage ensures minimal impact on battery life in portable systems and avoids loading errors in high-impedance sensor bias networks. The P6SMB8.2AT3G maintains leakage below 1 µA up to 8.2 V, supporting precision analog front-end protection without signal path interference.

Can the P6SMB8.2AT3G be used in UL 497B-certified loop circuits?

Yes, the entire P6SMB6.8AT3G series-including the P6SMB8.2AT3G-is UL Recognized under file E210057 for protector classification per UL 497B. It has passed all required tests including strike voltage breakdown, endurance conditioning, dielectric withstand, and discharge validation. This certification permits direct use in isolated 4–20 mA loops, telecom interface circuits, and other safety-critical applications where UL 497B compliance is mandated by end-equipment standards.