NXP Semiconductors PESD12VS2UAT,215

Overview

PESD12VS2UAT,215 from Nexperia is a unidirectional double ESD protection diode in common-cathode SOT23 configuration, designed to safeguard two data lines against electrostatic discharge and surge transients. It features a 12 V reverse stand-off voltage (VRWM), 35 V clamping voltage at 5 A peak pulse current (V(CL)R), 38 pF typical diode capacitance at 0 V, <1 nA reverse leakage at 12 V, and 30 kV IEC 61000-4-2 contact ESD rating - used in CAN bus and high-speed data line protection.

For engineers reviewing the PESD12VS2UAT,215 datasheet, PESD12VS2UAT,215 pinout, PESD12VS2UAT,215 application, or PESD12VS2UAT,215 equivalent, key selection criteria include clamping performance under 5 A 8/20 µs surge, low capacitance for signal integrity, common-cathode dual-line topology, and compatibility with automotive-grade transient immunity requirements.

Technical Context

This device implements a dual-anode, single-common-cathode silicon avalanche diode structure optimized for fast response (<1 ns rise time) to ESD events per IEC 61000-4-2. Its unidirectional architecture provides low forward-voltage conduction only from anode to cathode, enabling ground-referenced protection of positive-polarity signals.

The SOT23 package supports surface-mount assembly with thermal resistance (Rthj-amb) suitable for ambient operation up to +150 °C, and its 38 pF capacitance at 0 V reverse bias ensures minimal loading on 10–100 Mbps data lines such as CAN, RS-485, and USB 2.0 D+/D− pairs.

Key Specifications

Pinout & Package

Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead package with standard footprint (D = 2.8 mm, E = 2.5 mm, Lp = 1.2 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with ESDR05V24-2/TR and TPD2E001DRSR, PESD12VS2UAT,215 delivers superior surge robustness (180 W, 30 kV) and optimal balance of 12 V standoff and 38 pF capacitance - making it the preferred choice for CAN, RS-485, and automotive sensor interfaces requiring both high-voltage tolerance and signal fidelity.

Availability

PESD12VS2UAT,215 is available at Aetrix Electronics and suitable for CAN bus protection, industrial RS-485 interfaces, and automotive sensor signal conditioning requiring stable component supply across extended production lifecycles.

Supply support for PESD12VS2UAT,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, and consumer markets with high-volume, high-reliability components.

The PESDxS2UAT series was developed specifically for robust, low-capacitance ESD protection of high-speed data lines in automotive and industrial environments - emphasizing reliability under repeated transient stress.

FAQ

What is the maximum peak pulse current rating for PESD12VS2UAT,215?

The PESD12VS2UAT,215 is rated for 5 A peak pulse current (Ipp) under an 8/20 µs exponential decay waveform per IEC 61000-4-5. This value is confirmed in the Limiting Values table of the datasheet and defines the maximum transient current the device can safely clamp without degradation. Exceeding this rating risks permanent parametric shift or failure of the PESD12VS2UAT,215.

Does PESD12VS2UAT,215 support bidirectional signal lines like CAN?

Yes - although PESD12VS2UAT,215 is unidirectional per diode element, its common-cathode dual-anode configuration allows it to protect bidirectional differential buses such as CAN. Each anode clamps positive transients on its respective line to the shared cathode (ground), while the inherent asymmetry is mitigated by system-level grounding and layout; the PESD12VS2UAT,215 is explicitly cited in Applications for CAN bus protection.

What is the typical diode capacitance of PESD12VS2UAT,215 at 0 V reverse bias?

The typical diode capacitance (Cd) of PESD12VS2UAT,215 is 38 pF at VR = 0 V and f = 1 MHz, as specified in the Electrical Characteristics table. This low value ensures minimal impact on signal rise/fall times and impedance matching for data rates up to 12 Mbps, making the PESD12VS2UAT,215 suitable for CAN FD and RS-485 applications.

Is PESD12VS2UAT,215 compliant with IEC 61000-4-2 Level 4?

Yes - PESD12VS2UAT,215 achieves >30 kV contact discharge per IEC 61000-4-2, exceeding Level 4 requirements (8 kV contact / 15 kV air). This rating is verified per the ESD Maximum Ratings table and confirms suitability for industrial and automotive end-equipment subjected to rigorous ESD stress testing protocols involving the PESD12VS2UAT,215.

What is the reverse leakage current specification for PESD12VS2UAT,215 at 12 V?

The reverse leakage current (IRM) for PESD12VS2UAT,215 is specified as <1 nA at VRWM = 12 V and Tj = 25 °C, with a maximum of 50 nA. This ultra-low leakage prevents DC loading of sensitive analog or low-power digital inputs, preserving accuracy and battery life - a critical design value confirmed in the Electrical Characteristics section for the PESD12VS2UAT,215.