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NXP Semiconductors PESD12VS4UD,115
- Part No.:
- PESD12VS4UD,115
- Manufacturer:
- NXP Semiconductors
- Category:
- TVS Diodes
- Package:
- SC-74, SOT-457
- Datasheet:
-
PESD12VS4UD,115.pdf
- Description:
- TVS DIODE 12VWM 24VC 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,340
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Product details
Overview
PESD12VS4UD,115 from Nexperia is a quadruple unidirectional ESD protection diode array in SOT457 (SC-74) package, designed to protect four signal lines against electrostatic discharge up to 30 kV (IEC 61000-4-2 level 4), with 12 V reverse standoff voltage, 10 A peak surge current (8/20 µs), and 24 V clamping voltage at 10 A - used in SIM card interfaces, USB data lines, and portable electronics I/O ports.
For engineers reviewing the PESD12VS4UD,115 datasheet, PESD12VS4UD,115 pinout, PESD12VS4UD,115 application, or PESD12VS4UD,115 equivalent, key selection criteria include clamping voltage under 10 A surge, sub-100 pF diode capacitance for high-speed signal integrity, ultra-low leakage (<15 nA at 12 V), and dual-common-anode configuration enabling compact 4-line protection without shared cathode routing.
Technical Context
The PESD12VS4UD,115 integrates four independent unidirectional ESD protection diodes sharing two common anode terminals (pins 2 and 5), forming two parallel anode groups - each protecting two cathodes (pins 1&3, pins 4&6). This architecture supports flexible line assignment while maintaining low differential resistance (≤25 Ω) and fast response to ESD transients.
It complies with IEC 61000-4-2 (±30 kV contact discharge) and IEC 61000-4-5 (10 A surge, 8/20 µs), delivering 200 W peak pulse power per diode. Its 73–100 pF capacitance at 0 V bias enables use on 10–50 Mbps data lines such as UART, SIM interface, and low-speed USB without signal degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage (VRWM) | 12 V - maximum continuous operating voltage before conduction; sets upper limit for protected signal swing. |
| Clamping Voltage (VCL) | 24 V at IPP = 10 A - voltage seen by downstream IC during worst-case surge; ensures safe margin below typical 28 V absolute max ratings. |
| Peak Pulse Current (IPP) | 10 A (8/20 µs) - surge handling capacity per diode; validated per IEC 61000-4-5 compliance. |
| Diode Capacitance (Cd) | 73–100 pF at 1 MHz, 0 V - low enough to avoid distortion on 10–50 Mbps digital signals like SIM CLK/DATA. |
| ESD Withstand (VESD) | 30 kV contact discharge (IEC 61000-4-2 level 4) - exceeds industrial and consumer immunity requirements. |
| Reverse Leakage (IRM) | 0.05–15 nA at VRWM = 12 V - negligible loading on high-impedance signal paths like SIM reset or detection lines. |
| Breakdown Voltage (VBR) | 12.5–16 V at IR = 1 mA - ensures reliable turn-on just above VRWM, minimizing false triggering. |
Pinout & Package
SOT457 (SC-74) plastic surface-mount package: 6-pin, 3.0 × 1.7 mm body, 0.95 mm height, 0.65 mm pitch; optimized for automated placement and reflow compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 | Protected signal line 1 input; connects to I/O pin requiring ESD clamping to common anode. |
| 2 | Common Anode A | Anode for diodes on pins 1 and 3; ties to system ground or local low-impedance return path. |
| 3 | Cathode 2 | Protected signal line 2 input; shares anode (pin 2) with pin 1 for compact dual-line protection. |
| 4 | Cathode 3 | Protected signal line 3 input; uses separate anode group (pin 5) to isolate from pins 1–3. |
| 5 | Common Anode B | Anode for diodes on pins 4 and 6; enables independent grounding or split-return layout for noise-sensitive pairs. |
| 6 | Cathode 4 | Protected signal line 4 input; completes quad-line coverage with minimal PCB area. |
Key Features
| Feature | Design Value |
|---|---|
| Quad-line unidirectional ESD protection | Four independent diodes in one SOT457 footprint - replaces four discrete TVS devices, saving >60% board space. |
| Dual common-anode topology | Two isolated anode groups (pins 2 & 5) allow differential or split-ground routing without crosstalk between protected lines. |
| Ultra-low leakage current | ≤15 nA at 12 V - prevents DC loading on battery-powered SIM card detection or wake-up lines. |
| Low clamping voltage | 24 V at 10 A surge - maintains safe margin below 28 V IC absolute maximum ratings in portable systems. |
| High-speed signal compatibility | 73–100 pF capacitance - preserves edge integrity on 10–50 Mbps interfaces including SIM I/O and UART. |
Applications
| Smartphone SIM Card Interface | Industrial HMI Serial Port |
|---|---|
Use Scenario: Protecting SIM VCC, I/O, CLK, and RST lines in mobile handsets exposed to repeated plug/unplug and user-handling ESD events. IC Role / Device Role / Timing Role: Unidirectional clamping diode array placed directly at SIM connector, shunting ESD transients to ground before reaching baseband processor GPIOs. Use Value: 30 kV contact ESD rating and 24 V clamping ensure no latch-up or damage to 1.8 V/3 V SIM controller even after thousands of insertions. |
Use Scenario: Securing RS-232/RS-485 control lines on human-machine interface panels in factory environments with frequent operator contact. IC Role / Device Role / Timing Role: Quad-channel transient suppressor on TX/RX/RTS/CTS lines, absorbing EFT bursts and cable-discharge events before reaching UART transceivers. Use Value: 10 A surge capability and 200 W peak power per diode prevent communication dropouts during 4 kV EFT testing per IEC 61000-4-4. |
| USB 2.0 Peripheral Port | Automotive Infotainment Display Link |
Use Scenario: ESD hardening of D+ and D− data lines plus VBUS and ID pins on USB-A receptacles in peripherals like keyboards and mice. IC Role / Device Role / Timing Role: Low-capacitance (73–100 pF) quad diode array placed at connector, preserving USB 2.0 signal rise/fall times and eye diagram integrity. Use Value: Sub-100 pF capacitance avoids USB 2.0 high-speed timing violations while delivering 30 kV ESD protection on all four critical lines. |
Use Scenario: Protecting LVDS or FPD-Link clock/data pairs driving TFT displays in automotive dashboards subject to ISO 10605 discharge events. IC Role / Device Role / Timing Role: Dual-anode configuration isolates display clock and data lanes, preventing cross-talk during simultaneous ESD strikes on multiple lines. Use Value: Independent anode groups (pins 2 & 5) enable separate ground returns for clock and data, reducing jitter induced by shared surge currents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESDA6V1SC6 | Lower VRWM (6.1 V), higher Cd (120 pF), single common anode (5-pin SOT457) | Better suited for 3.3–5 V logic; less suitable for 12 V signal rails or high-speed lines >20 Mbps | Select when protecting 3.3 V UART or I²C where lower clamping voltage is prioritized over speed. |
| TPD4E001DPYR | Same 4-channel unidirectional structure, but 12 V VRWM and 15 pF Cd (at 0 V); 6-pin X2SON package (1.0 × 1.0 mm) | Superior high-frequency performance (up to 480 Mbps USB 2.0), smaller footprint, but lower surge rating (4 A) | Choose for space-constrained USB 2.0 or HDMI CEC designs needing <20 pF capacitance and 4 A surge tolerance. |
Compared with ESDA6V1SC6 and TPD4E001DPYR, the PESD12VS4UD,115 uniquely balances 12 V standoff, 10 A surge capability, and 73–100 pF capacitance - making it optimal for mid-speed (10–50 Mbps), 12 V-tolerant interfaces like SIM cards and industrial serial links where both voltage headroom and ESD robustness are critical.
Availability
PESD12VS4UD,115 is available at Aetrix Electronics and suitable for SIM card interfaces, industrial serial ports, USB peripheral protection, and automotive display link circuits requiring stable component supply across production lifecycles.
Supply support for PESD12VS4UD,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.
The PESD12VS4UD,115 belongs to Nexperia's PESDxS4UD series of ESD protection arrays - engineered specifically for compact, high-reliability protection of multi-line interfaces in portable and harsh-environment electronics.
FAQ
What is the maximum continuous operating voltage for PESD12VS4UD,115?
The PESD12VS4UD,115 has a reverse standoff voltage (VRWM) of 12 V, meaning it can safely block up to 12 V DC or steady-state signal voltages without conducting. This makes it suitable for protecting 12 V-tolerant I/O lines such as SIM card interfaces and industrial sensor outputs, while remaining inactive during normal operation of the PESD12VS4UD,115.
How does the dual common-anode configuration of PESD12VS4UD,115 improve circuit protection?
The PESD12VS4UD,115 uses two separate common anodes (pins 2 and 5), allowing two independent pairs of protected lines (pins 1+3 and pins 4+6) to be grounded through different low-impedance paths. This reduces mutual interference during multi-line ESD events and supports noise-isolated routing - a key advantage over single-anode alternatives when implementing the PESD12VS4UD,115 in mixed-signal or high-reliability systems.
What is the clamping voltage of PESD12VS4UD,115 under a 10 A surge event?
The PESD12VS4UD,115 clamps to 24 V when subjected to a 10 A, 8/20 µs surge pulse (per IEC 61000-4-5). This value is measured from cathode to anode and ensures downstream ICs with 28 V absolute maximum ratings remain within safe operating limits during transient events - a critical specification confirmed in the official PESD12VS4UD,115 datasheet.
Can PESD12VS4UD,115 be used on high-speed data lines like USB 2.0?
Yes - the PESD12VS4UD,115 exhibits 73–100 pF diode capacitance at 0 V bias, which preserves signal integrity on USB 2.0 full-speed (12 Mbps) and low-speed (1.5 Mbps) lines. While not rated for high-speed (480 Mbps) operation due to its capacitance, it is widely deployed on USB-A peripheral ports where ESD robustness and cost-efficiency outweigh ultra-low-Cd requirements - a verified use case for the PESD12VS4UD,115.
What packaging and taping option does PESD12VS4UD,115 use?
The PESD12VS4UD,115 is supplied in SOT457 (SC-74) package on 4 mm pitch, 8 mm tape and reel - specifically the "T1" (normal taping) variant indicated by the suffix "-115" in the ordering code. This format supports standard pick-and-place assembly and is compatible with JEDEC-compliant reflow profiles, ensuring reliable manufacturing integration of the PESD12VS4UD,115.
PESD12VS4UD,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Package/Case:
- SC-74, SOT-457
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V (Max)
- Voltage - Breakdown (Min):
- 12.5V
- Voltage - Clamping (Max) @ Ipp:
- 24V
- Current - Peak Pulse (10/1000µs):
- 10A (8/20µs)
- Power - Peak Pulse:
- 200W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 73pF @ 1MHz
- Operating Temperature:
- -65°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-74
PESD12VS4UD,115 FAQ
1.How can I place an order for PESD12VS4UD,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD12VS4UD,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD12VS4UD,115 reliable?
The price and inventory of PESD12VS4UD,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD12VS4UD,115 is usually 5 days.
3.What payment methods are accepted for PESD12VS4UD,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD12VS4UD,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD12VS4UD,115?
PESD12VS4UD,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD12VS4UD,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD12VS4UD,115?
For technical support, including PESD12VS4UD,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD12VS4UD,115 requirements.
6.How does Aetrix verify that PESD12VS4UD,115 is sourced from the original manufacturer or authorized distributors?
All PESD12VS4UD,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD12VS4UD,115 meets industry standards.
7.What is the process for return or replacement of PESD12VS4UD,115?
All PESD12VS4UD,115 units undergo pre-shipment inspection (PSI). If there is an issue with PESD12VS4UD,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD12VS4UD,115 part is unused and in its original packaging.
Return procedure for PESD12VS4UD,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD12VS4UD,115 Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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