Nexperia USA Inc. PESD24VF1BLYL

Overview

PESD24VF1BLYL from Nexperia is a bidirectional ESD protection diode in DFN1006-2 (SOD882) package, designed to safeguard single high-speed signal lines against IEC 61000-4-2 ±10 kV contact discharge transients. It delivers ultra-low 0.30 pF capacitance, 24 V reverse standoff voltage, and 1 nA leakage at 24 V - enabling NFC antenna and USB 2.0/MIPI data line protection without signal integrity degradation.

For engineers reviewing the PESD24VF1BLYL datasheet, PESD24VF1BLYL pinout, PESD24VF1BLYL application, or PESD24VF1BLYL equivalent, key selection criteria include clamping voltage under 1 A pulse (17 V), dynamic resistance (0.8 Ω), and layout-critical placement near connectors to minimize transient path inductance.

Technical Context

This device implements a symmetric dual-cathode TVS structure with two back-to-back Zener-like junctions, enabling bidirectional clamping for AC-coupled or differential signaling paths. Its low 0.30 pF capacitance is achieved via optimized junction area and doping profile, validated at 1 MHz and 0 V bias.

Clamping occurs at ≤17 V under 1 A 8/20 µs surge (IEC 61000-4-5), with breakdown voltage specified at 24.5–31.5 V (10 mA). The 0.8 Ω dynamic resistance ensures rapid voltage suppression during sub-nanosecond ESD events, critical for preserving signal eye diagrams in >100 Mbps interfaces.

Key Specifications

Pinout & Package

DFN1006-2 (SOD882) package: 1.0 mm × 0.6 mm × 0.48 mm body, 0.65 mm pitch, leadless, bottom-terminated. Requires reflow-compatible footprint per Figure 9 (solder paste stencil: 0.3 mm × 0.7 mm pads).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Compared with PESD24VF1BLYL, ESDE0402MUTAG offers lower capacitance but insufficient voltage headroom for 24 V NFC bias, while VEML6040-GS08 provides higher ESD robustness at the cost of signal integrity on high-speed lines - making PESD24VF1BLYL optimal for balanced 24 V, <1 GHz protection needs.

Availability

PESD24VF1BLYL is available at Aetrix Electronics and suitable for NFC antenna protection, USB 2.0 interface hardening, and MIPI D-PHY camera module designs requiring stable component supply across production ramps and long-life embedded programs.

Supply support for PESD24VF1BLYL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in ESD protection, MOSFETs, and bipolar transistors.

PESD24VF1BLYL belongs to Nexperia's ultra-low-capacitance ESD protection portfolio, engineered specifically for RF-sensitive and high-speed digital interfaces where signal fidelity and compact size are critical.

FAQ

What is the recommended PCB layout for PESD24VF1BLYL to maximize ESD suppression?

Place PESD24VF1BLYL within 2 mm of the protected connector or antenna feed point, using direct short traces to both the signal line and ground plane. Avoid vias in the signal path; use multiple ground vias adjacent to the device to minimize return loop inductance. Follow the 0.3 mm × 0.7 mm solder pad layout from Figure 9 to ensure reliable reflow wetting.

Can PESD24VF1BLYL protect against IEC 61000-4-5 surge events?

Yes - PESD24VF1BLYL is rated for 1 A peak pulse current under 8/20 µs waveform (IEC 61000-4-5), with clamping voltage ≤17 V. It is intended for secondary-level protection; use upstream with a series impedance (e.g., ferrite bead or resistor) for full compliance in harsh industrial environments.

Does PESD24VF1BLYL require external biasing or control signals?

No - PESD24VF1BLYL is a passive, bidirectional TVS diode requiring no power, enable pins, or configuration. It operates automatically: high-impedance under normal conditions (1 nA leakage at 24 V), then clamps within nanoseconds when voltage exceeds VRWM in either polarity.

How does the DFN1006-2 package affect thermal performance during repeated ESD strikes?

The DFN1006-2 package has low thermal mass and relies on PCB copper for heat dissipation. Under repetitive 10 kV ESD events, temperature rise is limited by the 150 °C max junction temperature and short pulse duration (<100 ns). Ensure ≥10 mm² of 1 oz copper connected directly to both terminals to maintain reliability across >1000 strike cycles.