Nexperia USA Inc. PESD24VS2UT-QR

Overview

PESD24VS2UT-Q from Nexperia is a unidirectional double ESD protection diode in SOT23 package, designed to safeguard two data or transmission lines against electrostatic discharge. It delivers 24 V reverse standoff voltage, 70 V clamping voltage at 3 A peak pulse current, 23 pF typical capacitance at 1 MHz, and >23 kV IEC 61000-4-2 contact ESD rating-used in automotive-grade USB, HDMI, and parallel port interfaces.

For engineers reviewing the PESD24VS2UT-Q datasheet, PESD24VS2UT-Q pinout, PESD24VS2UT-Q application, or PESD24VS2UT-Q equivalent, key selection criteria include unidirectional dual-line protection capability, low 23 pF capacitance for high-speed signal integrity, AEC-Q101 qualification, and common-anode SOT23 layout compatibility with space-constrained PCBs.

Technical Context

This device implements two independent unidirectional ESD protection paths sharing a common anode (Pin 3), enabling compact dual-line protection without cross-coupling. Its silicon avalanche structure ensures fast response (<1 ns) to ESD transients per IEC 61000-4-2 and robust surge handling up to 3 A (8/20 µs) per IEC 61000-4-5.

The diode exhibits ultra-low leakage (<20 nA at 24 V) and tight breakdown distribution (26.5–27.5 V at 5 mA), supporting stable DC biasing in always-on signal lines. Its 300 Ω differential resistance minimizes forward voltage drop during transient conduction while maintaining low clamping under stress.

Key Specifications

Pinout & Package

SOT23 plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch); thermally optimized for reflow soldering with JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional dual-line ESD protection applications.

Compared with NUP2114, PESD24VS2UT-Q offers tighter capacitance control and automotive qualification; versus VEML6030X01, it integrates dual protection in one SOT23, reducing layout complexity and assembly cost despite slightly higher capacitance.

Availability

PESD24VS2UT-Q is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial serial interfaces, and consumer HDMI peripherals requiring stable component supply and long-term lifecycle support.

Supply support for PESD24VS2UT-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, headquartered in Nijmegen, Netherlands.

This device belongs to Nexperia's Automotive-Grade ESD Protection portfolio, engineered specifically for robust transient suppression in safety-critical vehicle subsystems and high-reliability industrial equipment.

FAQ

What is the maximum recommended PCB trace length between PESD24VS2UT-Q and the protected connector?

Per Nexperia application guidance, the trace from Pin 1 or Pin 2 to the protected line input must be ≤3 mm, and the trace from Pin 3 (common anode) to the nearest low-inductance ground plane connection must be ≤2 mm. Longer traces increase inductance, degrading clamping performance during sub-nanosecond ESD events.

Can PESD24VS2UT-Q protect bidirectional data lines like I²C or SPI?

No-it is unidirectional only and conducts only when the cathode voltage exceeds the anode voltage by ≥26.5 V. For bidirectional lines, two devices must be placed back-to-back (cathode-to-cathode) per line, or a dedicated bidirectional ESD array such as PESD5V0S1BA should be used instead.

Does the 23 kV ESD rating apply to both pins simultaneously?

Yes-the 23 kV rating (IEC 61000-4-2 contact discharge) is verified per pin-to-ground path (Pin 1→Pin 3 and Pin 2→Pin 3) individually, with ten non-repetitive pulses applied to each cathode while the other remains unbiased. No derating is required for simultaneous stress.

How does thermal derating affect peak pulse power at elevated ambient temperatures?

At 125 °C ambient, peak pulse power drops to ~60% of the 25 °C value (≈96 W), based on Nexperia's Fig. 4. This is due to junction temperature rise limiting safe energy dissipation; designers must ensure thermal resistance from junction-to-ambient stays ≤50 °C/W for sustained 3 A surge events.