Nexperia USA Inc. PESD2V8R1BSFYL

Overview

PESD2V8R1BSF from Nexperia is an ultra-low-capacitance bidirectional ESD protection diode in a DSN0603-2 (SOD962-2) package, designed for single-line high-speed data interfaces. It delivers ±10 kV IEC 61000-4-2 ESD protection, 0.1 pF capacitance at 1 MHz, and supports USB4/Thunderbolt3 with -0.21 dB insertion loss at 10 GHz.

For engineers reviewing the PESD2V8R1BSF datasheet, PESD2V8R1BSF pinout, PESD2V8R1BSF application, or PESD2V8R1BSF equivalent, key selection criteria include reverse standoff voltage (±2.8 V), clamping performance under 8/20 µs pulses, dynamic resistance (0.45 Ω), and layout-critical ultra-small footprint compatibility with 20 Gbit/s signal integrity.

Technical Context

This device implements a snap-back clamping structure with negative dynamic resistance to reduce clamping voltage during ESD events. Its bidirectional architecture protects lines with both positive and negative signal polarities relative to ground without DC bias requirements.

Optimized for >10 GHz operation, it maintains signal fidelity via sub-0.15 pF capacitance up to 2.5 GHz and achieves -17.4 dB return loss at 10 GHz. The DSN0603-2 package enables placement within 1 mm of connectors to minimize transient loop inductance.

Key Specifications

Pinout & Package

DSN0603-2 (SOD962-2) is a leadless ultra-small surface-mount package measuring 0.6 mm × 0.3 mm × 0.3 mm with 0.4 mm pitch and cathode-marked top-side orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional ESD protection applications.

Compared with ESDE0402-2.8 and TPD4E001DPYR, PESD2V8R1BSF provides superior high-frequency performance (0.1 pF, -0.21 dB @10 GHz) in the smallest footprint (0.18 mm²), making it uniquely suited for next-generation 20 Gbit/s serial interfaces where layout-induced inductance and capacitive loading are dominant failure modes.

Availability

PESD2V8R1BSF is available at Aetrix Electronics and suitable for USB4 interface protection, Thunderbolt3 data line hardening, and mobile high-speed I/O requiring stable component supply across production ramps and long-life programs.

Supply support for PESD2V8R1BSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, reliability, and miniaturization.

PESD2V8R1BSF belongs to the TrEOS Protection family-engineered specifically for ultra-high-speed interface protection with sub-0.2 pF capacitance and snap-back clamping to safeguard 20+ Gbit/s serial links against ESD.

FAQ

What is the maximum recommended trace length between PESD2V8R1BSF and the protected connector?

Trace length must not exceed 1 mm from device pad to connector pin to limit inductance and maintain clamping effectiveness. Longer traces increase voltage overshoot during ESD events due to L·di/dt, potentially exceeding downstream IC absolute maximum ratings. Layout guidelines require direct connection with no vias or stubs.

Can PESD2V8R1BSF be used on DC-biased lines like HDMI or PCIe?

Yes-its ±2.8 V VRWM accommodates common-mode voltages up to ±2.5 V typical in HDMI 2.1 and PCIe Gen4 differential signaling. The bidirectional snap-back structure ensures clamping occurs symmetrically regardless of signal polarity, eliminating need for external bias networks.

Does PESD2V8R1BSF require thermal relief on its pads during reflow?

No-DSN0603-2's 0.3 mm body height and copper-leadframe construction enable uniform heating without thermal relief. Recommended stencil thickness is 0.1 mm with 0.256 mm × 0.256 mm solder paste apertures to control volume and prevent bridging during 260 °C peak reflow.

How does the snap-back behavior affect system-level ESD testing?

Snap-back reduces clamping voltage to ~5 V during 4.5 A 8/20 µs pulses, lowering stress on downstream PHYs. However, sustained overvoltage beyond breakdown (e.g., from faulty DC sources) can hold the device in snap-back state-designers must ensure no unclamped DC paths exist on protected lines.