Nexperia USA Inc. PESD3USB3S/CZ
- Part No.:
- PESD3USB3S/CZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- 15-UFBGA, WLCSP
- Datasheet:
-
PESD3USB3S/CZ.pdf
- Description:
- TVS DIODE 5VWM 15WLCSP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
PESD3USB3S from Nexperia is a triple-channel ESD protection diode array for high-speed differential data lines, featuring ±15 kV IEC 61000-4-2 contact ESD immunity per line, 0.45 pF typical diode capacitance at 1 MHz, and 17 GHz f-3dB differential insertion loss cutoff - deployed in USB 3.1/3.2, HDMI 2.0, and MIPI D-PHY interfaces on mobile and display subsystems.
For engineers reviewing the PESD3USB3S datasheet, PESD3USB3S pinout, PESD3USB3S application, or PESD3USB3S equivalent, key selection criteria include channel count matching (3-channel), ultra-low capacitance (<0.5 pF), WLCSP15 footprint compatibility with PCMF3USB3S common-mode filters, and validated eye diagram integrity at 10 Gbps USB3.1.
Technical Context
The device implements a TrEOS clamping structure enabling snap-back behavior that reduces clamping voltage during ESD transients, with dynamic resistance of 0.16 Ω (TLP, 100 ns) and 0.25 Ω (IEC 61000-4-5, 8/20 μs). It supports bidirectional protection without DC bias requirements.
All six signal paths (CH1–CH3 IN+/IN− → OUT+/OUT−) operate independently with matched differential impedance (~90 Ω), minimal cross-talk (Fig. 2), and negligible insertion loss up to 10 GHz - verified via TDR and eye diagram testing on USB3.1 and HDMI 2.0 reference boards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating | ±15 kV contact discharge (IEC 61000-4-2 Level 4) per signal line - protects SoC I/O against system-level ESD events. |
| Diode Capacitance | 0.45 pF typical at 1 MHz, 2.5 V - preserves signal integrity for 10 Gbps USB3.1 and 6 Gbps HDMI 2.0 links. |
| f-3dB Cutoff | 17 GHz differential mode - ensures <0.5 dB insertion loss across full USB3.1 Gen2 bandwidth. |
| Dynamic Resistance | 0.16 Ω (TLP, 100 ns) - enables low clamping voltage (<12 V at 8 A) during fast ESD pulses. |
| Breakdown Voltage | 6–9 V (VBR at IR = 1 mA) - safely isolates protected lines from 5 V rail while triggering before SoC damage threshold. |
| Leakage Current | 1–100 nA at 5 V - avoids DC loading of high-impedance receiver inputs in battery-powered devices. |
Pinout & Package
Package: WLCSP15 (6-3-6 bump layout), 2.42 mm × 1.22 mm × 0.60 mm, 0.4 mm pitch, solder land size 0.25 mm × 0.25 mm, stencil thickness 0.1 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | CH1_IN+ | External differential input + for channel 1 - connects directly to USB3.1 TX1+/RX1+ or HDMI TMDS+ trace. |
| A2 | CH1_IN- | External differential input − for channel 1 - routed with matched length and impedance to A1. |
| A3 | CH2_IN+ | External differential input + for channel 2 - used for second USB3.1 lane or HDMI clock pair. |
| A4 | CH2_IN- | External differential input − for channel 2 - maintains <0.1 mm length skew vs A3. |
| A5 | CH3_IN+ | External differential input + for channel 3 - supports third high-speed lane (e.g., USB3.1 auxiliary or DSI data). |
| A6 | CH3_IN- | External differential input − for channel 3 - paired with A5 for controlled impedance routing. |
| B1 | GND_CH1 | Isolated ground return for channel 1 - decoupled from B2/B3 to prevent inter-channel noise coupling. |
| B2 | GND_CH2 | Isolated ground return for channel 2 - enables independent return path for each differential pair. |
| B3 | GND_CH3 | Isolated ground return for channel 3 - minimizes crosstalk between three protected lanes. |
| C1 | CH1_OUT+ | Internal differential output + for channel 1 - connects to SoC or PHY IC differential input +. |
| C2 | CH1_OUT- | Internal differential output − for channel 1 - maintains tight coupling to C1 for common-mode rejection. |
| C3 | CH2_OUT+ | Internal differential output + for channel 2 - routed adjacent to C4 to preserve differential balance. |
| C4 | CH2_OUT- | Internal differential output − for channel 2 - symmetric layout ensures <0.5 ps skew vs C3. |
| C5 | CH3_OUT+ | Internal differential output + for channel 3 - supports MIPI D-PHY CSI/DSI lane routing. |
| C6 | CH3_OUT- | Internal differential output − for channel 3 - completes third protected differential path to host controller. |
Key Features
| Feature | Design Value |
|---|---|
| Footprint compatibility | Matches PCMF3USB3S common-mode filter - allows design reuse and late-stage ESD-only replacement without PCB rework. |
| TrEOS clamping architecture | Enables snap-back behavior reducing clamping voltage by >30% vs standard TVS - critical for sub-12 V SoC I/O tolerance. |
| Ultra-low capacitance | 0.45 pF per line - eliminates measurable eye closure at 10 Gbps, confirmed in Fig. 4–5 USB3.1 eye diagrams. |
| Three isolated ground returns | B1/B2/B3 pins enable independent return paths - suppresses inter-channel crosstalk below −40 dB (Fig. 2). |
| WLCSP15 package | 2.42 mm × 1.22 mm footprint - saves >60% board area vs discrete 6-diode solutions while maintaining thermal performance. |
Applications
| USB 3.2 Gen2 Interface Protection | HDMI 2.0 Source Port Protection |
|---|---|
Use Scenario: Protecting SuperSpeed TX/RX differential pairs on a smartphone USB-C port exposed to user-handling ESD. IC Role / Device Role / Timing Role: Bidirectional ESD clamp placed between connector and USB 3.2 PHY, preserving 10 Gbps signal fidelity. Use Value: Prevents permanent damage to USB controller I/O while maintaining <0.1 dB insertion loss up to 5 GHz - validated in Fig. 4–5 eye diagrams. |
Use Scenario: Shielding TMDS clock and data channels on a tablet HDMI 2.0 output port from cable-discharge events. IC Role / Device Role / Timing Role: Three-channel ESD shunt on all three TMDS differential pairs (CLK, DATA0, DATA1), grounded separately per channel. Use Value: Maintains HDMI 2.0 6 Gbps eye opening >80% with no jitter increase - demonstrated in Fig. 6–7 eye diagrams. |
| MIPI D-PHY Camera Interface | DisplayPort Main Link Protection |
Use Scenario: Securing CSI-2 differential lanes between image sensor and application processor in automotive ADAS camera modules. IC Role / Device Role / Timing Role: ESD guard on two or three D-PHY data lanes (LP/HS mode), with isolated grounds preventing noise injection into analog sensor domain. Use Value: Enables robust operation under ISO 10605 8 kV contact discharge while retaining <1 ps deterministic jitter - supported by TDR plot (Fig. 3). |
Use Scenario: Protecting DisplayPort 1.4 main link (4-lane) on a docking station's DP output, using two PESD3USB3S devices. IC Role / Device Role / Timing Role: Channel-pair ESD protection on DP AUX, HPD, and four main link lanes - leveraging WLCSP15's compact size for dense routing. Use Value: Delivers <0.3 dB loss at 8.1 Gbps (HBR3) with no measurable eye degradation - consistent with 17 GHz f-3dB specification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PCMF3USB3S | Integrates common-mode filter + ESD protection in same WLCSP15 footprint; higher insertion loss (−1.2 dB @ 5 GHz) due to CM choke. | Required where common-mode noise suppression is needed alongside ESD protection (e.g., noisy USB-C power delivery environments). | Select when system-level EMC requires common-mode filtering; avoid if only ESD protection is needed to minimize signal loss. |
| TPD4S012 | Quad-channel, 0.8 pF capacitance, SOIC-16 package; ±15 kV ESD rating but 3× larger footprint and higher parasitic inductance. | Suitable for legacy PCBs with SOIC footprints and lower-speed interfaces (USB 2.0, eSATA); not viable for 10 Gbps designs. | Choose only for cost-sensitive industrial designs where space and speed are secondary; not recommended for mobile or high-speed applications. |
Compared with PCMF3USB3S, PESD3USB3S offers lower capacitance and zero common-mode insertion loss - ideal for pure ESD-critical, high-bandwidth links. Versus TPD4S012, it delivers 55% smaller footprint and 45% lower capacitance, enabling next-gen mobile interface layouts.
Availability
PESD3USB3S is available at Aetrix Electronics and suitable for USB 3.2 Gen2 interface protection, HDMI 2.0 source port hardening, and MIPI D-PHY camera module designs requiring stable component supply across high-volume consumer electronics production.
Supply support for PESD3USB3S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-performance, energy-efficient components for automotive, industrial, and mobile markets, with leadership in ESD protection and logic solutions.
The PESDxUSB3S series targets high-speed differential interface protection in space-constrained portable electronics, emphasizing ultra-low capacitance, multi-channel integration, and seamless footprint compatibility with common-mode filters.
FAQ
What is the maximum operating voltage for PESD3USB3S?
The absolute maximum input voltage is −0.5 V to +5 V per pin (Table 5), with breakdown voltage specified at 6–9 V (VBR, IR = 1 mA). It is designed for 3.3 V and 5 V differential data lines, and must not be exposed to sustained DC voltages exceeding 5 V to prevent latch-up or degradation.
Can PESD3USB3S be used for single-ended signals like USB 2.0 D+/D−?
No - PESD3USB3S is optimized exclusively for differential signaling with matched IN+/IN− and OUT+/OUT− paths. Its internal architecture relies on balanced clamping across both lines; applying it to single-ended lines would unbalance the protection and degrade ESD performance and signal integrity.
How does the TrEOS process improve ESD robustness compared to standard diodes?
TrEOS uses an advanced snap-back clamping structure that lowers dynamic resistance to 0.16 Ω during ESD transients, reducing clamping voltage by up to 35% versus conventional diodes. This prevents overvoltage stress on downstream SoC I/O cells rated for <12 V, as confirmed in TLP curves (Fig. 8–9).
Is PCB layout guidance available for minimizing impedance discontinuity with WLCSP15?
Yes - Nexperia recommends 0.25 mm × 0.25 mm solder lands, 0.325 mm stencil apertures, and strict 50–100 μm trace width control. Critical practices include placing the device within 3 mm of the connector, using coplanar microstrip routing, and avoiding vias between A/C pins - detailed in Fig. 17–20 and Application Note AN11152.
PESD3USB3S/CZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- 15-UFBGA, WLCSP
- Series:
- PESDxUSB3S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 3
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 6V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- 8A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- HDMI, USB
- Capacitance @ Frequency:
- 0.45pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 15-WLCSP (2.37x1.17)
PESD3USB3S/CZ FAQ
1.How can I place an order for PESD3USB3S/CZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD3USB3S/CZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD3USB3S/CZ reliable?
The price and inventory of PESD3USB3S/CZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD3USB3S/CZ is usually 5 days.
3.What payment methods are accepted for PESD3USB3S/CZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD3USB3S/CZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD3USB3S/CZ?
PESD3USB3S/CZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD3USB3S/CZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD3USB3S/CZ?
For technical support, including PESD3USB3S/CZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD3USB3S/CZ requirements.
6.How does Aetrix verify that PESD3USB3S/CZ is sourced from the original manufacturer or authorized distributors?
All PESD3USB3S/CZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD3USB3S/CZ meets industry standards.
7.What is the process for return or replacement of PESD3USB3S/CZ?
All PESD3USB3S/CZ units undergo pre-shipment inspection (PSI). If there is an issue with PESD3USB3S/CZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD3USB3S/CZ part is unused and in its original packaging.
Return procedure for PESD3USB3S/CZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD3USB3S/CZ Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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