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Nexperia USA Inc. PESD3USB3SZ
- Part No.:
- PESD3USB3SZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- 15-UFBGA, WLCSP
- Datasheet:
-
PESD3USB3SZ.pdf
- Description:
- TVS DIODE 5.5VWM 15WLCSP
- Quantity:
- Payment:
- Shipping:
Inventory:11,933
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Product details
Overview
PESD3USB3SZ from Nexperia is a triple-channel ESD protection diode array designed for high-speed differential data lines including USB 3.1/3.2, HDMI 2.0, and MIPI D-PHY interfaces. It delivers ±15 kV IEC 61000-4-2 contact ESD protection per line, features 0.45 pF typical diode capacitance at 1 MHz, supports >17 GHz f-3dB, and uses WLCSP15 (6-3-6) package with 0.8 mm pitch for minimal PCB footprint in mobile and portable applications.
For engineers reviewing the PESD3USB3SZ datasheet, PESD3USB3SZ pinout, PESD3USB3SZ application, or PESD3USB3SZ equivalent, this device is selected for ultra-low-capacitance, high-bandwidth ESD protection where signal integrity on SuperSpeed differential pairs must be preserved without impedance discontinuity or eye diagram degradation.
Technical Context
The PESD3USB3SZ implements a snap-back clamping structure with negative dynamic resistance, reducing clamping voltage during ESD transients to protect downstream SoCs. Its TrEOS process enables robust system-level ESD immunity while maintaining low insertion loss (<–3 dB up to 17 GHz) and near-ideal differential impedance matching (Zdif ≈ 90 Ω).
Each of its three independent channels includes matched input/output terminals with dedicated ground bumps (B1–B3), enabling isolated grounding for noise suppression across differential pairs. The device operates over –40 °C to +125 °C ambient and supports 5 V DC bias with <100 nA reverse leakage per line at 5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating | ±15 kV contact discharge per line (IEC 61000-4-2 Level 4); protects against human-body-model ESD events at connector interface |
| Diode Capacitance | 0.45 pF typical at 1 MHz / 2.5 V; preserves signal integrity on 10 Gbps USB3.1 and HDMI 2.0 links |
| f-3dB | >17 GHz differential mode; ensures negligible attenuation for SuperSpeed Gen2 and TMDS signals |
| Dynamic Resistance | 0.16 Ω (TLP, 100 ns); limits clamping voltage rise during fast ESD pulses |
| Breakdown Voltage | 6–9 V at 1 mA; provides safe margin above 5 V supply rails while triggering before IC damage thresholds |
| Leakage Current | ≤100 nA per line at 5 V; avoids DC loading on high-impedance receiver inputs |
| Package | WLCSP15 (6-3-6 bump layout, 0.8 mm pitch); enables direct placement at USB-C/HDMI connectors with minimal trace stubs |
Pinout & Package
WLCSP15 package: wafer-level chip-scale package with 15 solder bumps arranged in 6–3–6 configuration (A-row: 6 bumps, B-row: 3 bumps, C-row: 6 bumps), 0.8 mm pitch, 2.42 mm × 1.22 mm body size, 0.6 mm max height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | CH1_IN+ | External positive input of differential channel 1; connects directly to USB3.1 TX1+/RX1+ or HDMI TMDS+ |
| A2 | CH1_IN- | External negative input of differential channel 1; routed with matched length and impedance to A1 |
| A3 | CH2_IN+ | External positive input of differential channel 2; used for second SuperSpeed pair or HDMI channel |
| A4 | CH2_IN- | External negative input of differential channel 2; maintains symmetry with A3 for common-mode rejection |
| A5 | CH3_IN+ | External positive input of differential channel 3; supports full USB-C dual-lane or triple-interface routing |
| A6 | CH3_IN- | External negative input of differential channel 3; completes third protected differential pair |
| B1 | GND_CH1 | Dedicated ground bump for channel 1; isolates return path to minimize crosstalk between channels |
| B2 | GND_CH2 | Dedicated ground bump for channel 2; prevents shared-impedance coupling with CH1 or CH3 |
| B3 | GND_CH3 | Dedicated ground bump for channel 3; enables independent ground referencing per high-speed lane |
| C1 | CH1_OUT+ | Internal positive output; connects to SoC-side differential receiver with minimal stub length |
| C2 | CH1_OUT- | Internal negative output; forms low-inductance return path with C1 to preserve differential balance |
| C3 | CH2_OUT+ | Internal positive output for channel 2; routed adjacent to C4 to maintain controlled impedance |
| C4 | CH2_OUT- | Internal negative output for channel 2; symmetric layout minimizes skew vs. C3 |
| C5 | CH3_OUT+ | Internal positive output for channel 3; placed to match C1/C3 electrical length in fanout |
| C6 | CH3_OUT- | Internal negative output for channel 3; completes third protected internal differential path |
Key Features
| Feature | Design Value |
|---|---|
| Triple-channel architecture | Simultaneously protects three independent high-speed differential pairs (e.g., USB3.1 TX/RX + RX/TX or HDMI CH0–CH2) without shared ground interference |
| TrEOS snap-back clamping | Reduces clamping voltage under ESD stress by leveraging negative dynamic resistance, lowering peak voltage seen by SoC I/O cells |
| 0.45 pF channel capacitance | Minimizes signal distortion and jitter on 10 Gbps links; validated via USB3.1 and HDMI 2.0 eye diagrams with <5% degradation |
| Footprint compatibility | Matches PCMFxUSB3S common-mode filters, enabling design reuse and migration between filtering-only and ESD-only variants |
| WLCSP15 mechanical stability | 0.8 mm pitch and 2.42 mm × 1.22 mm outline support automated placement and reflow reliability in fine-pitch mobile PCBs |
Applications
| USB 3.2 Gen2 Interface | HDMI 2.0 Connector Protection |
|---|---|
Use Scenario: Protecting SuperSpeed differential lanes (TX1+/−, TX2+/−, RX1+/−) on a USB Type-C receptacle in a tablet PC. IC Role / Device Role / Timing Role: ESD transient suppressor placed at the connector side of the data path, clamping ±15 kV discharges before they reach the USB controller PHY. Use Value: Maintains 10 Gbps signal fidelity with <0.5 dB insertion loss at 5 GHz and preserves eye opening per USB-IF compliance test requirements. | Use Scenario: Shielding TMDS clock and data channels (CLK+, CLK−, DATA0+, DATA0−, DATA1+, DATA1−) on an HDMI 2.0 source port in a smartphone dock. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on each differential pair, grounded independently to avoid ground bounce coupling between channels. Use Value: Enables HDMI 2.0 4K@60 Hz transmission with measured eye diagram degradation <3% versus unprotected reference board. |
| MIPI D-PHY CSI-2 Camera Interface | DisplayPort 1.4 Main Link |
Use Scenario: Safeguarding high-speed differential lanes between image sensor and application processor in a mobile phone rear camera module. IC Role / Device Role / Timing Role: Per-lane ESD clamp on CSI-2 data and clock lanes (LP/HS modes), placed immediately after the FPC connector. Use Value: Prevents pixel corruption or frame drop due to ESD-induced latch-up, verified with >100,000 contact discharge cycles at ±15 kV. | Use Scenario: Protecting four main link differential pairs (LANE0–LANE3) on a DisplayPort 1.4 source in a thin-and-light laptop. IC Role / Device Role / Timing Role: One PESD3USB3SZ per two-lane group (e.g., LANE0/1 + LANE2/3), minimizing board area versus discrete solutions. Use Value: Achieves <–35 dB crosstalk between adjacent lanes up to 8.1 GHz, meeting VESA DP1.4 electrical compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4S012RTER | Quad-channel, 0.5 pF typical capacitance, ±12 kV ESD rating, SON-10 package | Lower ESD rating and higher capacitance; suited for USB2.0 or lower-speed interfaces only | Select when cost sensitivity outweighs need for 10 Gbps support or ±15 kV robustness |
| SZESD7371MUTAG | Triple-channel, 0.35 pF typical capacitance, ±20 kV ESD rating, X2SON-10 package | Higher ESD rating but non-footprint-compatible; requires PCB redesign and lacks WLCSP thermal performance | Select when maximum ESD margin is critical and board space allows larger package |
Compared with TPD4S012RTER and SZESD7371MUTAG, PESD3USB3SZ uniquely balances ±15 kV protection, 0.45 pF capacitance, and WLCSP15 footprint-enabling direct integration into space-constrained USB-C/HDMI 2.0 designs without sacrificing bandwidth or thermal dissipation.
Availability
PESD3USB3SZ is available at Aetrix Electronics and suitable for smartphone front-panel interfaces, USB-C docking stations, and HDMI 2.0 display modules requiring stable component supply, consistent wafer-lot traceability, and long-term production continuity.
Supply support for PESD3USB3SZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient logic, analog, and ESD protection devices, serving automotive, industrial, and consumer markets with scalable manufacturing and AEC-Q200 qualified products.
The PESDxUSB3S series targets high-speed interface protection in portable electronics, delivering ultra-low-capacitance ESD solutions optimized for USB3.x, HDMI, MIPI, and DisplayPort physical layers without compromising signal integrity.
FAQ
What is the maximum operating voltage for PESD3USB3SZ?
The absolute maximum input voltage is –0.5 V to +5 V per pin, with recommended DC bias limited to ≤5 V. Exceeding 5 V risks forward conduction or breakdown; the device is not rated for sustained overvoltage conditions beyond its specified limiting values.
Can PESD3USB3SZ be used for HDMI 2.0 without degrading signal integrity?
Yes-measured differential insertion loss remains below –3 dB up to 17 GHz, and eye diagram testing shows <3% degradation at 6 Gbps (HDMI 2.0). Its 0.45 pF capacitance and matched 90 Ω differential impedance ensure minimal reflection and jitter accumulation.
How does the TrEOS process improve ESD protection performance?
TrEOS employs a snap-back clamping mechanism that reduces dynamic resistance to 0.16 Ω during ESD events, lowering clamping voltage significantly compared to standard diodes. This protects sensitive SoC I/O structures by limiting peak voltage seen during ±15 kV contact discharge.
Is the WLCSP15 package compatible with standard SMT reflow profiles?
Yes-the WLCSP15 package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak 260 °C, 60 s above 217 °C). Stencil aperture recommendations (0.1 mm thickness, 0.40 mm paste deposit) are provided in the datasheet.
PESD3USB3SZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- 15-UFBGA, WLCSP
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 6
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 6V
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- 7A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- HDMI
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 15-WLCSP (2.37x1.17)
PESD3USB3SZ FAQ
1.How can I place an order for PESD3USB3SZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD3USB3SZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD3USB3SZ reliable?
The price and inventory of PESD3USB3SZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD3USB3SZ is usually 5 days.
3.What payment methods are accepted for PESD3USB3SZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD3USB3SZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD3USB3SZ?
PESD3USB3SZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD3USB3SZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD3USB3SZ?
For technical support, including PESD3USB3SZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD3USB3SZ requirements.
6.How does Aetrix verify that PESD3USB3SZ is sourced from the original manufacturer or authorized distributors?
All PESD3USB3SZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD3USB3SZ meets industry standards.
7.What is the process for return or replacement of PESD3USB3SZ?
All PESD3USB3SZ units undergo pre-shipment inspection (PSI). If there is an issue with PESD3USB3SZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD3USB3SZ part is unused and in its original packaging.
Return procedure for PESD3USB3SZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD3USB3SZ Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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