Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PESD3V3L4UF,115

Part No.:
PESD3V3L4UF,115
Manufacturer:
Nexperia USA Inc.
Category:
TVS Diodes
Package:
6-XFDFN
Datasheet:
AetrixPESD3V3L4UF,115.pdf
Description:
TVS DIODE 3.3VWM 12VC 6XSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:11,323

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PESD3V3L4UF,115 from Nexperia is a low-capacitance unidirectional quadruple ESD protection diode array in an XSON6 (SOT886) leadless ultra-small SMD package, rated for 3.3 V reverse standoff voltage, 22 pF typical diode capacitance, and 20 kV IEC 61000-4-2 contact ESD protection - designed to safeguard four high-speed signal lines in portable electronics interfaces.

For engineers reviewing the PESD3V3L4UF,115 datasheet, PESD3V3L4UF,115 pinout, PESD3V3L4UF,115 application, or PESD3V3L4UF,115 equivalent, key selection criteria include clamping voltage at 3 A (12 V), ultra-low leakage (75 nA max at 3.3 V), and compact 1.0 × 1.45 × 0.5 mm footprint for space-constrained USB, SIM, and audio line protection.

Technical Context

This device implements four independent unidirectional ESD protection diodes sharing two common anode terminals (pins 2 and 5), enabling efficient layout for differential or parallel signal line protection while maintaining low inter-channel coupling. Its architecture supports bidirectional transient suppression on individual lines via grounded common anodes.

Designed for IEC 61000-4-2 Level 4 (±20 kV contact) and IEC 61000-4-5 surge compliance (2.5 A, 8/20 µs), it delivers 30 W peak pulse power per diode with 12 V clamping at 3 A and 8 V at 1 A - critical for preserving signal integrity in high-frequency data paths.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Standoff Voltage 3.3 V - maximum continuous operating voltage before conduction; ensures compatibility with 3.3 V logic and interface rails.
Diode Capacitance 22 pF (typ) at 1 MHz, 0 V - enables use on USB 2.0, HDMI, and audio lines without signal degradation.
Clamping Voltage 12 V at 3 A (8/20 µs) - limits transient overvoltage to safe levels for downstream 3.3 V IC inputs.
ESD Withstand 20 kV contact discharge (IEC 61000-4-2) - exceeds industrial and consumer immunity requirements.
Leakage Current 75 nA max at VRWM = 3.3 V - prevents DC loading of sensitive analog or RF signal paths.
Peak Pulse Power 30 W per diode (8/20 µs) - sustains high-energy surges without failure in handheld device ports.
Breakdown Voltage 5.6 V (typ) at 1 mA - provides robust margin above 3.3 V rail while enabling fast turn-on during transients.

Pinout & Package

XSON6 (SOT886) package: leadless ultra-small outline, body dimensions 1.0 × 1.45 × 0.5 mm, six terminals, bottom-soldered thermal pad not electrically connected.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (diode 1) Protected signal line 1 output node; connects to I/O trace before connector.
2 Common anode Shared return path to ground or low-impedance reference; must be routed with minimal inductance.
3 Cathode (diode 2) Protected signal line 2 output node; isolated from pin 1 to prevent crosstalk.
4 Cathode (diode 3) Protected signal line 3 output node; supports three-line interface like SIM card CLK/DAT/IO.
5 Common anode Second shared return path; allows dual-grounding strategy or split-plane routing for noise isolation.
6 Cathode (diode 4) Protected signal line 4 output node; completes quad-line coverage for full USB D+/D−/ID/VBUS or audio L/R/GND+MIC.

Key Features

Feature Design Value
Ultra-low capacitance 22 pF typical enables <1% signal distortion on 480 Mbps USB 2.0 data lines.
20 kV ESD protection Meets IEC 61000-4-2 Level 4 contact discharge - sufficient for handheld device button, port, and display edge zones.
Dual common anodes Pins 2 and 5 allow independent grounding of two diode pairs, reducing mutual interference in mixed-signal layouts.
30 W peak pulse rating Sustains 8/20 µs surges up to 3 A without parametric shift - validated per IEC 61000-4-5.
12 V clamping at 3 A Keeps protected IC input voltage below absolute maximum ratings during worst-case ESD events.

Applications

USB 2.0 Interface Protection SIM Card Slot Protection

Use Scenario: Protecting D+, D−, ID, and VBUS pins of micro-USB connectors in smartphones and tablets against user-handling ESD.

IC Role / Device Role / Timing Role: Unidirectional transient voltage suppressor placed directly at connector entry point, clamping fast-rising ESD pulses before they reach USB PHY IC.

Use Value: Prevents latch-up and gate oxide damage in USB transceivers while maintaining <10 ps rise-time fidelity due to 22 pF capacitance.

Use Scenario: Shielding SIM card interface lines (CLK, DAT, IO, VCC) from electrostatic discharge during hot-insertion and removal.

IC Role / Device Role / Timing Role: Quad-channel ESD clamp with dedicated cathodes per line and dual common anodes tied to local ground plane.

Use Value: Enables reliable 5 MHz SIM clock operation by limiting transient overshoot to ≤12 V, well below 5.5 V SIM IC absolute max rating.

Mobile Audio Jack Protection Portable Display Data Lines

Use Scenario: Guarding stereo headphone L/R channels and microphone input against ESD from cable handling and plug insertion.

IC Role / Device Role / Timing Role: Low-leakage (75 nA) unidirectional diode array preserving DC bias integrity of electret mic amplifier and audio DAC outputs.

Use Value: Maintains THD+N <0.01% at 20 kHz by avoiding capacitive loading beyond 22 pF on analog signal paths.

Use Scenario: Safeguarding MIPI DSI or LVDS data pairs in OLED/LCD modules against ESD during assembly and field use.

IC Role / Device Role / Timing Role: High-speed ESD suppressor with matched channel capacitance ensuring <0.1 dB insertion loss at 500 MHz.

Use Value: Preserves eye diagram opening by limiting inter-symbol interference from parasitic capacitance mismatch across four lanes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional quadruple ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
PESD3V3L4UG SC-88A (SOT353) package, 5-pin, single common anode (pin 2), 28 pF capacitance. Lower board area but higher capacitance; suitable for lower-speed lines (<100 Mbps) and cost-sensitive designs. Select when PCB real estate permits larger pitch and signal bandwidth is ≤100 MHz.
TPD4E05U06DQAR Texas Instruments part; 6-pin X2SON, 3.3 V, 5.5 pF typ, 10 V clamping at 3 A, 12 kV ESD rating. Superior high-frequency performance but lower ESD rating; requires tighter layout control for 12 kV compliance. Choose for RF front-end or high-speed serial links where sub-6 pF capacitance is mandatory and 12 kV suffices.

Compared with PESD3V3L4UF,115, PESD3V3L4UG trades 6 pF higher capacitance and reduced ESD margin for lower cost and simpler routing, while TPD4E05U06DQAR offers half the capacitance but sacrifices 40% ESD robustness - making the original optimal for balanced 3.3 V, 20 kV, 22 pF protection in mainstream portable interfaces.

Availability

PESD3D3V3L4UF,115 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, SIM card slot hardening, and mobile audio jack safeguarding requiring stable component supply and long-term production continuity.

Supply support for PESD3V3L4UF,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, size, and performance.

The PESDxL4UF series belongs to Nexperia's ESD protection portfolio, engineered specifically for ultra-compact, low-capacitance transient suppression in portable consumer electronics with stringent board space and signal integrity constraints.

FAQ

What is the maximum recommended PCB trace length between PESD3V3L4UF,115 and the protected connector?

Trace length should not exceed 3 mm from each cathode pin to its corresponding signal line entry point, and the common anode traces (pins 2 and 5) must connect to a solid ground plane within 2 mm. Longer traces increase inductance, degrading clamping response and risking overshoot beyond 12 V during 20 kV ESD events.

Can PESD3V3L4UF,115 protect bidirectional signal lines such as I²C or UART?

No - PESD3V3L4UF,115 is unidirectional and only clamps positive transients relative to ground. For bidirectional lines, a separate TVS or back-to-back diode configuration is required. Its architecture assumes signal polarity remains positive with respect to ground, as confirmed in Nexperia's application diagram Figure 9.

Is the thermal pad on the bottom of the SOT886 package electrically connected?

No - the exposed thermal pad in the XSON6 (SOT886) package is non-functional and must be left floating or grounded solely for mechanical stability. Electrical connection would short the internal die substrate and invalidate all specified parameters, including leakage current and clamping behavior.

Does PESD3V3L4UF,115 require external series impedance for optimal ESD performance?

Yes - a 0 Ω or low-value (≤10 Ω) resistor is recommended between each cathode pin and the protected IC input to dampen LC resonance formed with the 22 pF diode capacitance and PCB trace inductance. This improves clamping consistency across the 100 MHz–1 GHz ESD spectrum per IEC 61000-4-2 test methodology.

PESD3V3L4UF,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Package/Case:
6-XFDFN
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
4
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3.3V (Max)
Voltage - Breakdown (Min):
5.32V
Voltage - Clamping (Max) @ Ipp:
12V
Current - Peak Pulse (10/1000µs):
3A (8/20µs)
Power - Peak Pulse:
30W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
22pF @ 1MHz
Operating Temperature:
-65°C ~ 150°C (TA)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
6-XSON, SOT886 (1.45x1)

PESD3V3L4UF,115 FAQ

1.How can I place an order for PESD3V3L4UF,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PESD3V3L4UF,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PESD3V3L4UF,115 reliable?

The price and inventory of PESD3V3L4UF,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD3V3L4UF,115 is usually 5 days.

3.What payment methods are accepted for PESD3V3L4UF,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD3V3L4UF,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PESD3V3L4UF,115?

PESD3V3L4UF,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PESD3V3L4UF,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PESD3V3L4UF,115?

For technical support, including PESD3V3L4UF,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD3V3L4UF,115 requirements.

6.How does Aetrix verify that PESD3V3L4UF,115 is sourced from the original manufacturer or authorized distributors?

All PESD3V3L4UF,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD3V3L4UF,115 meets industry standards.

7.What is the process for return or replacement of PESD3V3L4UF,115?

All PESD3V3L4UF,115 units undergo pre-shipment inspection (PSI). If there is an issue with PESD3V3L4UF,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PESD3V3L4UF,115 part is unused and in its original packaging.

Return procedure for PESD3V3L4UF,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PESD3V3L4UF,115 Tags

  • PESD3V3L4UF,115
  • PESD3V3L4UF,115 PDF
  • PESD3V3L4UF,115 Datasheet
  • PESD3V3L4UF,115 Specifications
  • PESD3V3L4UF,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PESD3V3L4UF,115
  • Buy PESD3V3L4UF,115
  • PESD3V3L4UF,115 Price
  • PESD3V3L4UF,115 Distributor
  • PESD3V3L4UF,115 Supplier
  • PESD3V3L4UF,115 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER