My Inquiry
My Account
Nexperia USA Inc. PESD3V3R1BSFYL
- Part No.:
- PESD3V3R1BSFYL
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
PESD3V3R1BSFYL.pdf
- Description:
- TREOS HIGH-SPEED PROTECTION
- Quantity:
- Payment:
- Shipping:
Inventory:355
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PESD3V3R1BSF from Nexperia is an extremely low-capacitance bidirectional ESD protection diode in a DSN0603-2 (SOD962-2) package, designed to safeguard high-speed data lines such as USB4 and Thunderbolt against ±8 kV IEC 61000-4-2 ESD events. It delivers 0.155 pF capacitance at 0 V, -0.27 dB insertion loss at 10 GHz, and clamps transients with a low dynamic impedance snap-back structure. Its dual-cathode configuration enables symmetric protection of bidirectional signal paths in portable electronics.
For engineers reviewing the PESD3V3R1BSF datasheet, PESD3V3R1BSF pinout, PESD3V3R1BSF application, or PESD3V3R1BSF equivalent, key selection criteria include sub-0.2 pF capacitance for >10 GHz signal integrity, bidirectional clamping behavior, reverse standoff voltage of ±3.3 V, ultra-small 0.6 mm × 0.3 mm footprint, and verified performance on high-speed differential interfaces.
Technical Context
This device implements a silicon-based snap-back clamping structure that exhibits negative dynamic resistance during ESD events, reducing clamping voltage significantly below conventional Zener or TVS thresholds. Its bidirectional symmetry allows direct placement on AC-coupled or floating differential pairs without polarity concerns.
The DSN0603-2 package integrates both cathodes on separate terminals (Pin 1 = K1, Pin 2 = K2), enabling a low-inductance path to ground with minimal parasitic loop area. The absence of an anode terminal confirms its dedicated two-terminal, cathode-referenced architecture optimized for single-line protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | ±3.3 V - Ensures no conduction during normal 3.3 V signal operation, preserving DC bias integrity |
| Diode Capacitance | 0.155 pF at 0 V, 1 MHz - Enables minimal signal distortion on 10+ GHz serial links like USB4 Gen 3x2 |
| Insertion Loss | -0.27 dB at 10 GHz - Confirms negligible RF attenuation in high-frequency data channels |
| Return Loss | -14.3 dB at 10 GHz - Indicates good impedance match (≈1.5:1 VSWR) for controlled-impedance traces |
| Leakage Current | 1 nA typical at 3.3 V - Prevents measurable DC loading on sensitive I/O drivers and receivers |
| ESD Rating | ±8 kV contact per IEC 61000-4-2 - Meets industrial and consumer end-equipment immunity requirements |
Pinout & Package
Supplied in a leadless, ultra-small DSN0603-2 (SOD962-2) surface-mount package measuring 0.6 mm × 0.3 mm × 0.3 mm with 0.4 mm pitch. The marking bar denotes the cathode side; both terminals are cathodes, supporting symmetrical bidirectional clamping.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 (Cathode) | First cathode terminal; connects to protected line; forms one half of symmetrical clamping path |
| 2 | K2 (Cathode) | Second cathode terminal; connects to system ground; completes low-inductance transient discharge path |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping architecture | Enables protection of AC-coupled or floating differential signals without polarity constraints |
| Snap-back dynamic resistance | Reduces clamping voltage under ESD stress, limiting peak voltage seen by downstream ICs |
| Ultra-low 0.155 pF capacitance | Maintains signal integrity on >10 GHz interfaces including Thunderbolt 4 and USB4 Gen 3x2 |
| Dual-cathode SMD configuration | Eliminates need for external grounding components; supports direct line-to-ground placement |
Applications
| USB4 Data Lines | Thunderbolt Interfaces |
|---|---|
Use Scenario: Protection of TX/RX differential pairs in USB4 Gen 3x2 host and device ports operating at 20 Gbps per lane. IC Role / Device Role / Timing Role: Bidirectional ESD clamp placed immediately adjacent to connector, shunting transients to ground before reaching SerDes PHY. Use Value: 0.155 pF capacitance avoids measurable eye diagram degradation at 20 Gbps, preserving jitter margin and BER compliance. | Use Scenario: ESD hardening of Thunderbolt 4 controller I/Os in laptops and docks handling 40 Gbps aggregate bandwidth. IC Role / Device Role / Timing Role: Symmetric line-to-ground protector on differential AC-coupled lanes, leveraging snap-back behavior to limit clamping voltage below 6 V. Use Value: -0.27 dB insertion loss at 10 GHz ensures <0.05 dB total channel loss contribution, meeting Thunderbolt 4 electrical compliance. |
| Mobile Display Interfaces | High-Speed Audio Links |
Use Scenario: Protection of MIPI D-PHY or C-PHY data lanes in smartphone displays and camera modules. IC Role / Device Role / Timing Role: Single-line ESD suppressor on each unidirectional or bidirectional data trace, mounted within 2 mm of flex connector. Use Value: Sub-0.2 pF capacitance prevents timing skew between data lanes and maintains setup/hold margins at 2.5+ Gbps rates. | Use Scenario: Transient suppression on high-resolution audio serial interfaces (e.g., SoundWire, TDM over MIPI SLIMbus). IC Role / Device Role / Timing Role: Low-leakage (1 nA) bidirectional clamp on bidirectional clock/data lines, avoiding DC offset or bias shift. Use Value: 1 nA leakage at 3.3 V prevents audible pop/click artifacts during audio codec power-up and idle states. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E001DPYR | 0.3 pF capacitance; 4-channel array; larger X2SON package (1.0 mm × 0.6 mm) | Requires PCB real estate for quad-channel layout; less suitable for space-constrained single-line use | Select when protecting multiple lines simultaneously and board area permits larger footprint |
| ESD5302F | 0.25 pF capacitance; dual-line configuration; SOT-563 package (1.6 mm × 1.6 mm) | Higher capacitance degrades >8 GHz signal integrity; unsuitable for USB4/Thunderbolt | Prefer only for lower-speed interfaces (<5 Gbps) where cost or availability outweighs RF performance |
Compared with TPD4E001DPYR and ESD5302F, PESD3V3R1BSF offers the lowest capacitance (0.155 pF) and smallest footprint (0.6 mm × 0.3 mm), making it uniquely suited for next-generation 10–20 GHz serial interfaces where signal fidelity and miniaturization are critical.
Availability
PESD3D3V3R1BSF is available at Aetrix Electronics and suitable for USB4, Thunderbolt, MIPI D-PHY, and high-speed audio interface designs requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for PESD3V3R1BSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance logic, analog, and discrete devices, with leadership in ESD protection, MOSFETs, and automotive-grade components.
PESD3V3R1BSF belongs to the TrEOS family of ultra-low-capacitance ESD protectors, engineered specifically for preserving signal integrity in >10 GHz high-speed serial interfaces while delivering robust ±8 kV IEC 61000-4-2 immunity.
FAQ
What is the maximum recommended trace length between PESD3V3R1BSF and the protected connector?
Per Nexperia application guidance, the PCB trace from the device to the connector must be ≤2 mm to minimize inductance in the ESD current path. Longer traces increase clamping voltage during transients due to L·di/dt effects, potentially exceeding downstream IC absolute maximum ratings. Ground return path length must also be minimized using local ground vias.
Does PESD3V3R1BSF require a series resistor or ferrite bead for optimal performance?
No. PESD3V3R1BSF is designed for direct line-to-ground placement without external components. Its snap-back clamping structure and ultra-low inductance path eliminate the need for series impedance. Adding a resistor would degrade high-frequency response and increase clamping voltage, contradicting its design intent for >10 GHz applications.
Can PESD3V3R1BSF be used on DC-biased single-ended lines like GPIO or UART?
Yes, but only if the line operates within ±3.3 V and has no sustained DC current path to ground. Its ±3.3 V standoff rating matches standard 3.3 V I/Os. However, continuous DC current above 1 µA risks thermal overstress due to its low-power snap-back structure-use only for transient-only protection, not DC crowbar applications.
How does the dual-cathode configuration affect PCB layout compared to traditional anode-cathode ESD diodes?
The dual-cathode (K1/K2) configuration simplifies routing: one terminal connects directly to the protected signal, the other to a clean local ground plane-no anode reference needed. This eliminates polarity sensitivity and reduces loop area versus traditional diodes requiring anode tie-off, improving high-frequency ESD suppression efficiency and easing layout in dense RF sections.
PESD3V3R1BSFYL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- -
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- Telecom, USB
- Capacitance @ Frequency:
- 0.155pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DSN0603-2
PESD3V3R1BSFYL FAQ
1.How can I place an order for PESD3V3R1BSFYL through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD3V3R1BSFYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD3V3R1BSFYL reliable?
The price and inventory of PESD3V3R1BSFYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD3V3R1BSFYL is usually 5 days.
3.What payment methods are accepted for PESD3V3R1BSFYL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD3V3R1BSFYL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD3V3R1BSFYL?
PESD3V3R1BSFYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD3V3R1BSFYL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD3V3R1BSFYL?
For technical support, including PESD3V3R1BSFYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD3V3R1BSFYL requirements.
6.How does Aetrix verify that PESD3V3R1BSFYL is sourced from the original manufacturer or authorized distributors?
All PESD3V3R1BSFYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD3V3R1BSFYL meets industry standards.
7.What is the process for return or replacement of PESD3V3R1BSFYL?
All PESD3V3R1BSFYL units undergo pre-shipment inspection (PSI). If there is an issue with PESD3V3R1BSFYL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD3V3R1BSFYL part is unused and in its original packaging.
Return procedure for PESD3V3R1BSFYL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD3V3R1BSFYL Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
