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Nexperia USA Inc. PESD3V3S4UD,115
- Part No.:
- PESD3V3S4UD,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- SC-74, SOT-457
- Datasheet:
-
PESD3V3S4UD,115.pdf
- Description:
- TVS DIODE 3.3VWM 12VC 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:221,000
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Product details
Overview
PESD3V3S4UD from Nexperia is a quadruple unidirectional ESD protection diode array in SOT457 (SC-74/TSOP6) package, designed to protect four signal lines against IEC 61000-4-2 level 4 ESD (±30 kV contact), with 3.3 V reverse standoff voltage, 12 V clamping voltage at 20 A, and 215–300 pF capacitance - deployed in SIM card interfaces and high-speed data lines of portable electronics.
For engineers reviewing the PESD3V3S4UD datasheet, PESD3V3S4UD pinout, PESD3V3S4UD application, or PESD3V3S4UD equivalent, this device is selected for low-capacitance, multi-line transient suppression where leakage current (<300 nA), peak pulse power (200 W), and common-anode architecture are critical for signal integrity and board-level ESD robustness.
Technical Context
The PESD3V3S4UD integrates four identical unidirectional ESD protection diodes sharing two common anodes (pins 2 and 5), enabling independent protection of four signal paths referenced to ground. Its VBR = 5.3–5.9 V and VCL = 12 V at IPP = 20 A ensure fast clamping during IEC 61000-4-2 and IEC 61000-4-5 transients.
With differential resistance Rdiff ≤ 25 Ω and ultra-low IRM = 300 nA at VRWM = 3.3 V, it minimizes signal distortion and DC loading on sensitive analog or digital I/Os. The 215–300 pF capacitance at 1 MHz supports USB 2.0, HDMI, and SIM card data lines without compromising edge rate or eye diagram integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 3.3 V - Maximum continuous operating voltage before conduction; matches 3.3 V logic rails without false triggering. |
| Clamping Voltage | 12 V at 20 A - Limits transient voltage seen by downstream ICs during 8/20 µs surge events per IEC 61000-4-5. |
| Peak Pulse Power | 200 W - Sustains high-energy ESD/surge pulses without thermal failure under standardized test conditions. |
| Diode Capacitance | 215–300 pF at 1 MHz - Enables use on high-speed lines (e.g., SIM CLK/DATA, USB D+/D−) while maintaining signal fidelity. |
| ESD Rating | ±30 kV contact discharge per IEC 61000-4-2 level 4 - Meets industrial and consumer-grade immunity requirements. |
| Leakage Current | 300 nA max at 3.3 V - Prevents measurable DC loading on battery-powered or high-impedance sensor inputs. |
| Breakdown Voltage | 5.3–5.9 V at 1 mA - Ensures reliable turn-on margin above 3.3 V supply while avoiding premature conduction. |
Pinout & Package
SOT457 (SC-74 / TSOP6) 6-pin surface-mount plastic package, 3.1 mm × 1.7 mm × 1.1 mm body, gull-wing leads, JEDEC-compliant footprint with 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 (K1) | Protected signal line 1 anode-side connection; clamps positive transients to common anode. |
| 2 | Common Anode (CA) | Shared anode node for K1 and K2; connects to VCC or local decoupling capacitor for bidirectional path control. |
| 3 | Cathode 2 (K2) | Protected signal line 2; paired with pin 2 for first dual-line protection channel. |
| 4 | Cathode 3 (K3) | Protected signal line 3; uses pin 5 as its common anode for second dual-line channel. |
| 5 | Common Anode (CA) | Shared anode node for K3 and K4; electrically isolated from pin 2 to support independent rail referencing. |
| 6 | Cathode 4 (K4) | Protected signal line 4; completes quad-channel configuration with separate anode domains. |
Key Features
| Feature | Design Value |
|---|---|
| Quad-line ESD protection | Four independent cathodes with dual common anodes enable flexible routing for 4-line or 3-line bidirectional schemes. |
| Low clamping voltage | 12 V at 20 A ensures downstream 3.3 V logic ICs remain within absolute maximum ratings during surge events. |
| Ultra-low leakage | 300 nA max at 3.3 V prevents battery drain and offset errors in precision analog front-ends or SIM card interfaces. |
| Controlled capacitance | 215–300 pF enables deployment on 480 Mbps USB 2.0 data lines without measurable jitter or rise-time degradation. |
| IEC-compliant rating | Validated to IEC 61000-4-2 level 4 (±30 kV contact) and IEC 61000-4-5 (20 A surge), eliminating need for external validation. |
Applications
| Mobile SIM Card Interface | USB 2.0 Data Lines |
|---|---|
|
Use Scenario: Protection of SIM VCC, I/O, CLK, and RST lines in smartphones and wearables exposed to user-handling ESD. IC Role / Device Role / Timing Role: Unidirectional clamping diode array with dual common anodes, placed directly at SIM connector to minimize PCB trace inductance. Use Value: 3.3 V standoff and 12 V clamping preserve SIM controller's 3.3 V I/O tolerance while supporting hot-swap reliability. |
Use Scenario: ESD hardening of D+ and D− differential pair in portable USB peripherals and host ports. IC Role / Device Role / Timing Role: Low-capacitance (215–300 pF), matched-pair diode array ensuring <10 ps inter-line skew during transient suppression. Use Value: Maintains USB 2.0 eye diagram compliance and avoids packet retries caused by signal overshoot or timing jitter. |
| Audio Codec Line Inputs | Industrial Sensor Interface |
|
Use Scenario: Protection of line-in, mic-in, and headphone-out traces in portable audio devices subjected to human-body ESD. IC Role / Device Role / Timing Role: Quad-channel unidirectional clamp with sub-300 nA leakage, preserving DC bias stability of electret microphone preamps. Use Value: Prevents audible pop/click artifacts and amplifier latch-up during ±15 kV air-discharge events near audio jacks. |
Use Scenario: Transient suppression on 4–20 mA loop or RS-485 data lines in factory automation terminals. IC Role / Device Role / Timing Role: Dual-common-anode architecture allows independent grounding of protected channels across isolated subsystems. Use Value: 200 W peak pulse power withstands lightning-induced surges on field wiring without thermal runaway or parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor ESD9X3.3S | Single-channel, 3.3 V, 12 V clamping at 12 A; 150 pF typical capacitance; SOD-923 package. | Requires four discrete units for quad-line coverage; smaller footprint but higher assembly cost and layout complexity. | Select when board space is constrained and signal lines are physically separated; not suitable for shared-rail designs. |
| Vishay VEML6030X01 | Not applicable - optical ambient light sensor; misidentified cross-reference; excluded from valid alternatives. | N/A - incorrect functional category; no ESD protection capability. | Avoid: VEML6030X01 is a photometric sensor, not an ESD suppressor; substitution would leave system unprotected. |
Compared with ESD9X3.3S, PESD3V3S4UD delivers integrated quad-channel protection with dual common anodes and lower total BOM count, while VEML6030X01 is functionally incompatible and must not be substituted.
Availability
PESD3V3S4UD is available at Aetrix Electronics and suitable for mobile SIM interface design, USB 2.0 peripheral development, and industrial sensor terminal production requiring stable component supply and full IEC 61000-4-2/4-5 compliance.
Supply support for PESD3V3S4UD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-volume, high-reliability discrete and logic components for consumer, industrial, and automotive markets.
PESD3V3S4UD belongs to Nexperia's ESD protection portfolio, engineered specifically for compact, low-capacitance, multi-line transient suppression in portable and interface-dense electronics.
FAQ
What is the maximum operating temperature for PESD3V3S4UD?
The PESD3V3S4UD has a maximum junction temperature (Tj) of 150 °C and an ambient operating range of −65 °C to +150 °C. Thermal derating begins above 25 °C ambient, with peak pulse power decreasing linearly to ~60% at 125 °C junction, as confirmed in Figure 4 of the official datasheet.
Can PESD3V3S4UD protect bidirectional signals?
No - PESD3V3S4UD is a unidirectional ESD array. It protects signals referenced to ground with positive-going transients only. For true bidirectional protection (e.g., USB D+/D−), two devices or a dedicated bidirectional array like PESD5V0S4UD must be used, as stated in Section 10 of the datasheet.
How does the dual common-anode configuration affect PCB layout?
Pins 2 and 5 serve as independent common anodes for K1/K2 and K3/K4 respectively. This allows separation of protected signal groups onto different power domains or decoupling networks, reducing crosstalk and enabling optimized return-path routing - a key requirement for high-density SIM or sensor modules.
Is PESD3V3S4UD automotive-qualified?
No - per Revision History (Section 13), this part was explicitly changed to non-automotive qualification in the April 2023 revision. Automotive applications require the Q-grade variant (e.g., PESD3V3S4UQ), which undergoes AEC-Q200 stress testing and has different qualification documentation.
PESD3V3S4UD,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- SC-74, SOT-457
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5.3V
- Voltage - Clamping (Max) @ Ipp:
- 12V
- Current - Peak Pulse (10/1000µs):
- 20A (8/20µs)
- Power - Peak Pulse:
- 200W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 215pF @ 1MHz
- Operating Temperature:
- -65°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PESD3V3S4UD,115 FAQ
1.How can I place an order for PESD3V3S4UD,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD3V3S4UD,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD3V3S4UD,115 reliable?
The price and inventory of PESD3V3S4UD,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD3V3S4UD,115 is usually 5 days.
3.What payment methods are accepted for PESD3V3S4UD,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD3V3S4UD,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD3V3S4UD,115?
PESD3V3S4UD,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD3V3S4UD,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD3V3S4UD,115?
For technical support, including PESD3V3S4UD,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD3V3S4UD,115 requirements.
6.How does Aetrix verify that PESD3V3S4UD,115 is sourced from the original manufacturer or authorized distributors?
All PESD3V3S4UD,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD3V3S4UD,115 meets industry standards.
7.What is the process for return or replacement of PESD3V3S4UD,115?
All PESD3V3S4UD,115 units undergo pre-shipment inspection (PSI). If there is an issue with PESD3V3S4UD,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD3V3S4UD,115 part is unused and in its original packaging.
Return procedure for PESD3V3S4UD,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD3V3S4UD,115 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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