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NXP Semiconductors PESD3V3V4UG,115
- Part No.:
- PESD3V3V4UG,115
- Manufacturer:
- NXP Semiconductors
- Category:
- TVS Diodes
- Package:
- 5-TSSOP, SC-70-5, SOT-353
- Datasheet:
-
PESD3V3V4UG,115.pdf
- Description:
- TVS DIODE 3.3VWM 11VC 5TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,971
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Product details
Overview
PESD3V3V4UG,115 from Nexperia is a unidirectional quadruple ESD protection diode array in SOT353 (SC-88A) package, designed to protect four signal lines against electrostatic discharge up to 12 kV (IEC 61000-4-2 Level 4), with 3.3 V reverse standoff voltage, 15–18 pF diode capacitance at 0 V, and 11 V clamping voltage at 2 A surge current. It is used in high-speed data interfaces of portable electronics and SIM card circuits where low capacitance and minimal signal distortion are critical.
For engineers reviewing the PESD3V3V4UG,115 datasheet, PESD3V3V4UG,115 pinout, PESD3V3V4UG,115 application, or PESD3V3V4UG,115 equivalent, key selection criteria include verified 3.3 V standoff rating, sub-20 pF capacitance at 0 V bias, 25 nA max reverse leakage, IEC 61000-4-2/4-5 compliance, and SC-88A footprint compatibility for space-constrained PCB layouts.
Technical Context
This device implements four independent unidirectional ESD protection diodes sharing a common anode (Pin 2), enabling compact protection of four separate signal lines referenced to ground. Its architecture supports bidirectional transient suppression on each line via forward conduction during negative transients and reverse avalanche clamping during positive surges.
It meets IEC 61000-4-2 Level 4 (±12 kV contact discharge) and IEC 61000-4-5 (1.5 A, 8/20 µs surge), with a low 9–11 V clamping voltage ensuring downstream ICs remain within safe operating voltage limits during ESD events. The 200 Ω typical differential resistance minimizes voltage overshoot under fast-rising transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 3.3 V - Maximum continuous working voltage before conduction; defines upper limit of normal signal swing without leakage increase. |
| Diode Capacitance | 15–18 pF at 1 MHz, 0 V - Low enough to avoid signal integrity degradation in USB 2.0, HDMI, or audio data lines. |
| Clamping Voltage | 11 V at 2 A (8/20 µs) - Peak voltage seen by protected IC during worst-case ESD event; ensures <12 V stress on 3.3 V logic inputs. |
| ESD Withstand | ±12 kV IEC 61000-4-2 contact - Validated protection level for handheld device interfaces exposed to user handling. |
| Peak Pulse Power | 16 W per diode - Sustains transient energy without thermal failure under standardized surge conditions. |
| Reverse Leakage | 25 nA max at 3.3 V - Negligible DC loading on high-impedance signal paths such as SIM card detection or I²C lines. |
| Breakdown Voltage | 5.3–5.9 V at 1 mA - Ensures robust margin between standoff and clamping, preventing premature conduction during noise spikes. |
Pinout & Package
SOT353 (SC-88A) is a 5-lead surface-mount plastic package measuring 2.2 × 1.35 × 0.95 mm (L × W × H), optimized for ultra-compact board space and reflow soldering compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Diode 1) | Protected signal line 1 input; connects to trace requiring ESD shielding (e.g., SIM CLK). |
| 2 | Common Anode | Shared ground return path for all four diodes; must be connected directly to low-inductance system ground. |
| 3 | Cathode (Diode 2) | Protected signal line 2 input (e.g., SIM DATA); independent conduction path prevents crosstalk during clamping. |
| 4 | Cathode (Diode 3) | Protected signal line 3 input (e.g., SIM RST); enables simultaneous protection of three distinct I/Os in SIM interface. |
| 5 | Cathode (Diode 4) | Protected signal line 4 input (e.g., SIM VCC sense or auxiliary control line); completes quad-channel protection set. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional Quad Configuration | Four independent cathodes + one shared anode enable discrete protection of four signals with single-component footprint efficiency. |
| Ultra-Low Capacitance | 15–18 pF at 0 V allows use on 480 Mbps USB 2.0 D+/D− lines without measurable eye diagram degradation. |
| Low Clamping Voltage | 11 V at 2 A ensures protected 3.3 V logic devices (e.g., microcontroller GPIOs) stay below absolute maximum ratings during ESD strikes. |
| IEC 61000-4-2/4-5 Compliance | Validated ±12 kV contact ESD and 1.5 A surge immunity eliminates need for external test validation in end-product certification. |
| Sub-100 nA Reverse Leakage | 25 nA max at VRWM preserves battery life in always-on SIM detection or wake-up signal paths in portable devices. |
Applications
| Smartphone SIM Card Interface | USB 2.0 Data Line Protection |
|---|---|
Use Scenario: Protecting SIM CLK, DATA, RST, and VCC sense lines in mobile handsets against user-handling ESD. IC Role / Device Role / Timing Role: Unidirectional transient voltage suppressor placed at SIM connector edge to clamp fast-rising ESD pulses before reaching baseband processor. Use Value: Prevents SIM communication failure and field returns by maintaining signal integrity while meeting IEC 61000-4-2 Level 4 requirements. |
Use Scenario: Shielding D+ and D− differential pair plus two auxiliary control lines in compact USB 2.0 peripheral designs. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp preserving 480 Mbps data eye margin and minimizing jitter induced by parasitic capacitance. Use Value: Enables full-speed USB operation without signal attenuation or timing skew, validated by 15–18 pF capacitance at 1 MHz. |
| Portable Audio Headset Jack | Industrial Sensor Interface |
Use Scenario: Guarding left/right audio channels, microphone input, and ground-detection line in 3.5 mm TRRS headset connectors. IC Role / Device Role / Timing Role: Signal-line protector absorbing human-body-model ESD (≥10 kV) before analog audio amplifiers or codec inputs. Use Value: Eliminates audible pop/crackle during plug insertion and prevents latch-up in sensitive audio front-end circuitry. |
Use Scenario: Safeguarding four analog sensor outputs (e.g., temperature, humidity, pressure, supply monitor) in factory-floor equipment. IC Role / Device Role / Timing Role: Surge-resistant interface component suppressing 1.5 A, 8/20 µs transients induced by nearby motor switching or relay bounce. Use Value: Maintains measurement accuracy by limiting clamped voltage to ≤11 V, preventing ADC saturation or reference rail disturbance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PESD3V3V4UW | SOT665 package (1.7 × 1.5 mm); same electrical specs but flat-lead construction improves thermal dissipation and mechanical stability. | Better suited for high-vibration environments (e.g., automotive infotainment) due to stronger PCB adhesion and lower thermal resistance. | Select when board-level reliability under mechanical stress or elevated ambient temperature (>85 °C) is prioritized over minimum footprint. |
| TPD4E001DPYR | Texas Instruments part; 3.6 V standoff, 12 pF typ, 10 V clamping at 1 A; SOT-5X3 (same pin count, different pinout). | Requires PCB layout revision due to non-identical pin mapping; offers tighter clamping but lower surge rating (12 W vs. 16 W). | Choose only if clamping voltage margin is critical and layout redesign is acceptable; not drop-in compatible with PESD3V3V4UG,115. |
Compared with PESD3V3V4UG,115, PESD3V3V4UW provides identical protection performance in a mechanically robust flat-lead package, while TPD4E001DPYR delivers lower clamping at the cost of reduced surge power handling and non-interchangeable pinout-making PESD3V3V4UG,115 optimal for space-constrained, high-volume portable designs requiring proven SC-88A compatibility.
Availability
PESD3D3V4UG,115 is available at Aetrix Electronics and suitable for smartphone SIM interfaces, USB 2.0 peripheral protection, and portable audio jack circuits requiring stable component supply across production ramps and long-life product cycles.
Supply support for PESD3V3V4UG,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors including ESD protection, logic, MOSFETs, and bipolar transistors.
The PESDxV4 series targets compact, low-capacitance ESD protection for high-speed consumer interfaces, emphasizing minimal signal distortion and certified IEC compliance in ultra-small packages like SOT353.
FAQ
What is the maximum reverse standoff voltage specified for PESD3V3V4UG,115?
The PESD3V3V4UG,115 has a reverse standoff voltage (VRWM) of 3.3 V, meaning it remains non-conductive up to this DC or peak AC voltage under normal operating conditions. This rating ensures compatibility with 3.3 V logic systems while providing sufficient margin before breakdown at 5.3–5.9 V, as confirmed in Table 9 of the Nexperia datasheet.
Does PESD3V3V4UG,115 support bidirectional signal lines?
No-PESD3V3V4UG,115 is a unidirectional ESD protection device with a common anode configuration. It protects signals referenced to ground in one polarity direction; for true bidirectional protection (e.g., USB D+/D−), two devices or a dedicated bidirectional array would be required. Its pinout and IV characteristics confirm unidirectional operation only.
What is the diode capacitance of PESD3V3V4UG,115 at 1 MHz and 0 V bias?
The diode capacitance of PESD3V3V4UG,115 is specified as 15–18 pF at 1 MHz and 0 V reverse bias (Table 2 and Table 9). This low value is critical for preserving signal integrity in high-speed interfaces such as SIM data lines or audio paths, and is measured per diode-not total device capacitance.
How does PESD3V3V4UG,115 perform under IEC 61000-4-2 ESD testing?
PESD3V3V4UG,115 is rated for ±12 kV contact discharge per IEC 61000-4-2 Level 4, verified with ten non-repetitive pulses. Its clamping voltage remains ≤11 V at 2 A surge current, ensuring protected ICs experience no more than 11 V stress during worst-case ESD events-well below the 13.2 V absolute maximum for most 3.3 V logic devices.
Is PESD3V3V4UG,115 compatible with standard SC-88A footprints?
Yes-PESD3V3V4UG,115 uses the SOT353 package, which is identical to JEITA SC-88A. Its mechanical dimensions (2.2 × 1.35 × 0.95 mm) and 5-pin layout match SC-88A standards, and Figure 11 in the Nexperia datasheet confirms the outline. Reflow soldering footprints in Fig. 14 are explicitly labeled for SOT353/SC-88A.
PESD3V3V4UG,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Package/Case:
- 5-TSSOP, SC-70-5, SOT-353
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5.3V
- Voltage - Clamping (Max) @ Ipp:
- 11V
- Current - Peak Pulse (10/1000µs):
- 1.5A (8/20µs)
- Power - Peak Pulse:
- 16W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 15pF @ 1MHz
- Operating Temperature:
- -65°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-TSSOP
PESD3V3V4UG,115 FAQ
1.How can I place an order for PESD3V3V4UG,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD3V3V4UG,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD3V3V4UG,115 reliable?
The price and inventory of PESD3V3V4UG,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD3V3V4UG,115 is usually 5 days.
3.What payment methods are accepted for PESD3V3V4UG,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD3V3V4UG,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD3V3V4UG,115?
PESD3V3V4UG,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD3V3V4UG,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD3V3V4UG,115?
For technical support, including PESD3V3V4UG,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD3V3V4UG,115 requirements.
6.How does Aetrix verify that PESD3V3V4UG,115 is sourced from the original manufacturer or authorized distributors?
All PESD3V3V4UG,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD3V3V4UG,115 meets industry standards.
7.What is the process for return or replacement of PESD3V3V4UG,115?
All PESD3V3V4UG,115 units undergo pre-shipment inspection (PSI). If there is an issue with PESD3V3V4UG,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD3V3V4UG,115 part is unused and in its original packaging.
Return procedure for PESD3V3V4UG,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD3V3V4UG,115 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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