Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PESD3V3X4UHMYL

Part No.:
PESD3V3X4UHMYL
Manufacturer:
Nexperia USA Inc.
Category:
TVS Diodes
Package:
6-XFDFN
Datasheet:
AetrixPESD3V3X4UHMYL.pdf
Description:
TVS DIODE 3.3VWM 4.5VC DFN1308-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18,548

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PESD3V3X4UHMYL from Nexperia is a 4-channel unidirectional ESD protection array in a DFN1308-6 (SOT8006B) package, designed for SD-card interface lines. It delivers 25 kV IEC 61000-4-2 contact ESD immunity, 3.7 V typical clamping voltage at 11 A (8/20 µs), and 0.15 Ω dynamic resistance-enabling robust transient suppression in portable SD-card slots.

For engineers reviewing the PESD3V3X4UHMYL datasheet, PESD3V3X4UHMYL pinout, PESD3V3X4UHMYL application, or PESD3V3X4UHMYL equivalent, key selection criteria include reverse standoff voltage (3.3 V), low diode capacitance (0.8–0.9 pF), common-anode 4-diode architecture, and ultra-thin 0.38 mm profile for space-constrained SD card connectors.

Technical Context

This device implements four independent unidirectional TVS diodes sharing two common anode terminals (Pins 2 and 5), enabling compact protection of four unidirectional signal lines-such as SD_CMD, SD_CLK, SD_DAT0, and SD_DAT1-against both positive and negative transients. Its TLP-characterized Rdyn = 0.15 Ω ensures minimal voltage overshoot during fast ESD events.

The 3.3 V VRWM rating aligns with 3.3 V SD-card signaling, while VBR ≥ 5 V (at 1 mA) provides margin against false triggering. Clamping performance is validated per IEC 61000-4-5 (8/20 µs surge) and IEC 61000-4-2 (±8 kV contact), with sub-4.5 V VCL across full 11 A pulse range.

Key Specifications

Parameter Value and Actual Design Meaning
VRWM 3.3 V - Matches 3.3 V SD-card I/O voltage; prevents leakage or conduction during normal operation.
VCL @ 11 A 3.7 V typ. - Limits transient voltage to safe level below SD-card absolute maximum ratings (typically 3.6 V).
ESD Rating ±25 kV IEC 61000-4-2 - Exceeds industrial and consumer ESD immunity requirements for handheld devices.
Cd @ 0 V 0.8–0.9 pF - Minimizes signal distortion on high-speed SD-card data lines (up to 104 MB/s UHS-I).
Rdyn 0.15 Ω - Ensures rapid energy shunting with low residual voltage during nanosecond-scale ESD events.
Package DFN1308-6 (SOT8006B), 1.3 × 0.8 × 0.38 mm - Enables placement directly at SD-card connector with minimal PCB footprint.

Pinout & Package

DFN1308-6 (SOT8006B) is a leadless, extremely thin surface-mount package with 6 terminals, 1.3 mm × 0.8 mm body size, and 0.38 mm max height-optimized for ultra-thin portable electronics.

Pin/Terminal Circuit Role Design Meaning
1 K1 (cathode, diode 1) Connects to first protected line (e.g., SD_CMD); cathode ties to signal, anode to common reference.
2 CA (common anode, diode 1–2) Shared anode node for diodes 1 and 2; connects to ground or local reference plane.
3 K2 (cathode, diode 2) Connects to second protected line (e.g., SD_CLK); forms unidirectional clamp with Pin 2.
4 K3 (cathode, diode 3) Connects to third protected line (e.g., SD_DAT0); pairs with Pin 5 anode.
5 CA (common anode, diode 3–4) Shared anode node for diodes 3 and 4; electrically isolated from Pin 2 for layout flexibility.
6 K4 (cathode, diode 4) Connects to fourth protected line (e.g., SD_DAT1); completes 4-line protection set.

Key Features

Feature Design Value
4-line unidirectional topology Enables discrete protection of SD_CMD, SD_CLK, SD_DAT0, SD_DAT1 without bidirectional compromise or capacitance penalty.
0.15 Ω dynamic resistance Reduces clamping voltage overshoot under fast-rising ESD pulses (<1 ns rise time), improving system-level immunity margin.
0.8–0.9 pF diode capacitance Preserves signal integrity on 50 MHz SD clock and high-speed data lanes; avoids timing skew or eye closure.
25 kV ESD rating Meets and exceeds IEC 61000-4-2 Level 4 (±8 kV contact / ±15 kV air) for end-product certification.
Ultra-thin 0.38 mm profile Allows integration beneath SD-card connectors in <1.0 mm Z-height mobile designs (e.g., tablets, wearables).

Applications

SD Card Interface Protection MicroSD Slot ESD Hardening

Use Scenario: Protecting SDIO host controller pins in smartphones and portable media players from user-handling ESD.

IC Role / Device Role / Timing Role: Unidirectional transient voltage suppressor placed within 2 mm of SD card edge connector.

Use Value: Prevents latch-up or gate oxide damage in SD host controllers by clamping ±8 kV discharges to ≤3.7 V at 11 A.

Use Scenario: Securing microSD card slots in ruggedized IoT gateways exposed to field maintenance ESD events.

IC Role / Device Role / Timing Role: Four-channel ESD array replacing discrete diodes to reduce BOM count and PCB area.

Use Value: Achieves 25 kV system-level ESD pass rate without degrading 104 MB/s UHS-I read/write throughput due to low 0.85 pF Cd.

Tablet Memory Expansion Port Industrial Handheld SD Host

Use Scenario: Safeguarding removable SD storage in Android tablets where users insert cards frequently in uncontrolled environments.

IC Role / Device Role / Timing Role: Common-anode dual-pair configuration allows independent grounding of two signal groups for noise isolation.

Use Value: Maintains signal fidelity on 4-bit SD bus (CLK/DAT0–DAT3) while meeting IEC 61000-4-2 Level 4 compliance.

Use Scenario: Protecting SD-card interfaces in industrial handheld scanners operating in dry, static-prone warehouse settings.

IC Role / Device Role / Timing Role: Low-profile DFN1308-6 package enables direct mounting under card retention mechanism.

Use Value: Survives repeated ±25 kV contact ESD strikes without parameter shift, verified over 1000 pulse stress cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional multi-line ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NUP4201MR6T1G Quad unidirectional; 3.3 V VRWM; higher VCL = 5.5 V @ 12 A; larger SOT-563 package (2.1 × 1.25 mm). Higher clamping increases risk of SD host IC damage; larger footprint limits placement near ultra-compact connectors. Select only if board space permits and 5.5 V clamping is acceptable for target host IC VDDIO tolerance.
Vishay VEML6040-GS08 Not applicable - optical ambient light sensor; misidentified as ESD part in some cross-reference tools. Functionally incompatible; no ESD protection capability. Avoid - this is not a valid alternative; confirmed non-equivalent via Vishay product matrix and datasheet review.

Compared with NUP4201MR6T1G, PESD3V3X4UHMYL offers 1.8 V lower clamping and 55 % smaller footprint-critical for modern SD-card layouts-while VEML6040-GS08 is unrelated and must be excluded from ESD protection consideration.

Availability

PESD3V3X4UHMYL is available at Aetrix Electronics and suitable for SD-card interface protection, microSD slot hardening, and industrial handheld memory expansion requiring stable component supply across high-mix consumer and embedded production programs.

Supply support for PESD3V3X4UHMYL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, analog, and ESD protection solutions-originally part of Philips and now an independent Dutch company headquartered in Nijmegen.

PESD3V3X4UHMYL belongs to Nexperia's ESD protection portfolio targeting portable interface protection, emphasizing ultra-low capacitance, miniature packaging, and certified IEC 61000-4-2 performance for consumer and industrial connectivity.

FAQ

What is the maximum continuous reverse voltage this device can withstand?

The PESD3V3X4UHMYL has a reverse standoff voltage (VRWM) of 3.3 V, meaning it blocks up to 3.3 V DC or steady-state AC signals without conducting. This matches standard 3.3 V SD-card I/O voltage levels and ensures zero leakage current under normal operation, as confirmed by IRM ≤ 100 nA at VRWM.

Can this device protect bidirectional SD data lines like DAT0–DAT3?

No-PESD3V3X4UHMYL is strictly unidirectional and protects only signals referenced to ground with defined polarity (e.g., SD_CMD, SD_CLK). For true bidirectional SD data lines, a separate bidirectional array such as PESD5V0X1BL is required; mixing unidirectional and bidirectional protection on the same bus is not supported.

How does the dual-common-anode pinout (Pins 2 and 5) affect PCB layout?

The split common anode design (Pin 2 for K1/K2, Pin 5 for K3/K4) allows independent grounding of two signal groups-reducing shared-impedance coupling and enabling optimized return path routing. Each CA pin must connect directly to a low-inductance ground plane via dedicated vias, not daisy-chained traces.

Is this device qualified for automotive applications?

No-PESD3V3X4UHMYL is specified for industrial and consumer use only. It lacks AEC-Q200 qualification and is not rated for automotive temperature ranges (−40 °C to +125 °C). For automotive SD-card interfaces, Nexperia's Automotive Qualified PESDxVxYx series (e.g., PESD5V0X1BLA) must be used instead.

PESD3V3X4UHMYL Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Package/Case:
6-XFDFN
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
4
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3.3V (Max)
Voltage - Breakdown (Min):
5V
Voltage - Clamping (Max) @ Ipp:
4.5V
Current - Peak Pulse (10/1000µs):
11A (8/20µs)
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
0.8pF @ 1MHz
Operating Temperature:
-55°C ~ 150°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1308-6

PESD3V3X4UHMYL FAQ

1.How can I place an order for PESD3V3X4UHMYL through Aetrix?

Please submit a Request for Quotation (RFQ) for PESD3V3X4UHMYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PESD3V3X4UHMYL reliable?

The price and inventory of PESD3V3X4UHMYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD3V3X4UHMYL is usually 5 days.

3.What payment methods are accepted for PESD3V3X4UHMYL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD3V3X4UHMYL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PESD3V3X4UHMYL?

PESD3V3X4UHMYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PESD3V3X4UHMYL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PESD3V3X4UHMYL?

For technical support, including PESD3V3X4UHMYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD3V3X4UHMYL requirements.

6.How does Aetrix verify that PESD3V3X4UHMYL is sourced from the original manufacturer or authorized distributors?

All PESD3V3X4UHMYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD3V3X4UHMYL meets industry standards.

7.What is the process for return or replacement of PESD3V3X4UHMYL?

All PESD3V3X4UHMYL units undergo pre-shipment inspection (PSI). If there is an issue with PESD3V3X4UHMYL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PESD3V3X4UHMYL part is unused and in its original packaging.

Return procedure for PESD3V3X4UHMYL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PESD3V3X4UHMYL Tags

  • PESD3V3X4UHMYL
  • PESD3V3X4UHMYL PDF
  • PESD3V3X4UHMYL Datasheet
  • PESD3V3X4UHMYL Specifications
  • PESD3V3X4UHMYL Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PESD3V3X4UHMYL
  • Buy PESD3V3X4UHMYL
  • PESD3V3X4UHMYL Price
  • PESD3V3X4UHMYL Distributor
  • PESD3V3X4UHMYL Supplier
  • PESD3V3X4UHMYL Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER