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Nexperia USA Inc. PESD3V3Z1BCSFYL
- Part No.:
- PESD3V3Z1BCSFYL
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
PESD3V3Z1BCSFYL.pdf
- Description:
- TVS DIODE 3.3VWM 4.8VC DSN0603-2
- Quantity:
- Payment:
- Shipping:
Inventory:20,828
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Product details
Overview
PESD3V3Z1BCSF from Nexperia is an extremely low-capacitance (0.45 pF typ), bidirectional ESD protection diode in a DSN0603-2 (SOD962-2) ultra-small leadless package, designed to protect high-speed signal lines-such as USB 3.1 and HDMI 2.0 differential pairs-from ±30 kV IEC 61000-4-2 contact discharge without signal integrity degradation.
For engineers reviewing the PESD3V3Z1BCSF datasheet, PESD3V3Z1BCSF pinout, PESD3V3Z1BCSF application, or PESD3V3Z1BCSF equivalent, this device is selected for ultra-high-speed interface protection where sub-0.5 pF capacitance, <4.8 V clamping at 15 A surge, and snap-back dynamic resistance are critical to maintaining eye diagram integrity at 5–10 Gbit/s data rates.
Technical Context
This dual-cathode ESD diode implements a symmetrical snap-back clamping structure with negative dynamic resistance, enabling rapid transition into low-impedance conduction during ESD events while minimizing voltage overshoot. Its bidirectional operation supports AC-coupled or ground-referenced signal lines with both positive and negative polarity transients.
The device's 0.45 pF capacitance at 1 MHz and 0 V bias, combined with a 14.3 GHz -3 dB cut-off frequency, ensures minimal insertion loss and negligible phase distortion on high-frequency differential paths. It meets IEC 61000-4-5 surge robustness (15 A, 8/20 µs) and delivers stable clamping down to 3.1 V at 4 A TLP pulses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 3.3 V - Ensures no leakage or conduction during normal 3.3 V signal operation, preserving DC bias integrity. |
| Diode Capacitance | 0.45 pF (typ) at 1 MHz, 0 V - Enables clean signal transmission up to 10 Gbit/s (e.g., USB 3.1 Gen 2, HDMI 2.0 TP1/TP2). |
| Clamping Voltage | 4.8 V (max) at 15 A IEC 61000-4-5 pulse - Limits transient overvoltage to safe levels for downstream 3.3 V I/O cells. |
| ESD Rating | ±30 kV per IEC 61000-4-2 contact discharge - Provides full-system ESD immunity without external shielding or layout overhead. |
| Dynamic Resistance | 0.11 Ω (typ) at ±10 A TLP - Delivers low-impedance path to ground, reducing clamping time and energy dissipation. |
| -3 dB Cut-off Frequency | 14.3 GHz - Confirms negligible high-frequency attenuation on >5 Gbit/s serial links. |
Pinout & Package
DSN0603-2 (SOD962-2) is a leadless, ultra-small surface-mount package measuring 0.6 mm × 0.3 mm × 0.3 mm with 0.4 mm pitch and a cathode-marking bar on the top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode of first ESD diode | Connected to protected signal line; forms one half of symmetrical bidirectional clamp to ground. |
| 2 (K2) | Cathode of second ESD diode | Connected to same protected signal line; enables identical clamping behavior for positive and negative transients. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional snap-back clamping | Enables symmetric protection of AC-coupled or floating signal lines without polarity constraints. |
| Ultra-low 0.45 pF capacitance | Maintains signal integrity on 5–10 Gbit/s interfaces (USB 3.1, HDMI 2.0) with no measurable eye closure. |
| 0.11 Ω dynamic resistance | Reduces clamping voltage overshoot and thermal stress during multi-pulse ESD events. |
| ±30 kV IEC 61000-4-2 rating | Eliminates need for secondary board-level ESD mitigation in handheld and portable designs. |
Applications
| USB 3.1 Gen 2 Interface | HDMI 2.0 Differential Pair |
|---|---|
Use Scenario: Protecting SuperSpeed TX/RX differential lanes on mobile SoC daughterboards and docking stations. IC Role / Device Role / Timing Role: Bidirectional transient suppressor placed immediately adjacent to USB Type-C connector. Use Value: Preserves 10 Gbit/s eye opening (Fig. 7–8) while limiting clamping to ≤4.8 V under 15 A surge. |
Use Scenario: Shielding TMDS clock and data channels in 4K UHD monitors and set-top boxes. IC Role / Device Role / Timing Role: Point-of-entry ESD clamp on each differential pair before HDMI controller PHY. Use Value: Maintains TP1/TP2 eye mask compliance (Fig. 10–13) with <0.5 pF loading and no jitter accumulation. |
| Smartphone Antenna Switch Control | Industrial Ethernet PHY Interface |
Use Scenario: Protecting low-voltage GPIO control lines driving RF antenna switches in 5G handsets. IC Role / Device Role / Timing Role: Low-capacitance guard on 1.8 V bidirectional control bus shared across multiple RF paths. Use Value: Prevents latch-up or oxide damage from ±8 kV human-body-model (HBM) events without adding RC delay. |
Use Scenario: Safeguarding MDI differential pairs in industrial PoE switches operating in electrically noisy factory environments. IC Role / Device Role / Timing Role: First-stage ESD barrier before common-mode choke and transformer coupling. Use Value: Withstands repeated 15 A surges (IEC 61000-4-5) while contributing <0.01 UI jitter at 1000BASE-T speeds. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor ESD9B3.3ST5G | 0.55 pF capacitance; 5.5 V clamping at 12 A; SOD-923 package (0.8 × 0.6 mm) | Larger footprint; higher capacitance limits use to ≤3 Gbit/s (e.g., USB 2.0, SATA) | Select when board space allows larger package and data rate ≤3 Gbit/s. |
| Vishay VEML3328 | 0.35 pF capacitance; 4.2 V clamping at 12 A; DFN1006-2 package (1.0 × 0.6 mm) | Lower capacitance but larger size and lower surge rating (12 A vs. 15 A) | Prefer for ultra-low-capacitance priority in non-surge-critical 10+ Gbit/s links (e.g., PCIe Gen4 Rx). |
Compared with ESD9B3.3ST5G and VEML3328, PESD3V3Z1BCSF uniquely balances 0.45 pF capacitance, 15 A surge capability, and 0.6 × 0.3 mm footprint-making it optimal for space-constrained, high-speed consumer interfaces requiring full IEC 61000-4-2/4-5 compliance.
Availability
PESD3V3Z1BCSF is available at Aetrix Electronics and suitable for USB 3.1 Gen 2, HDMI 2.0, and smartphone antenna switch control applications requiring stable component supply, consistent parametric performance, and long-term obsolescence management.
Supply support for PESD3V3Z1BCSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with leadership in ESD protection and automotive-grade components.
PESD3V3Z1BCSF belongs to the TrEOS family-designed specifically for ultra-high-speed digital interface protection where sub-0.5 pF capacitance and snap-back clamping are mandatory for signal fidelity at multi-Gbit/s rates.
FAQ
What is the maximum recommended PCB trace length between PESD3V3Z1BCSF and the protected connector?
The device must be placed within 3 mm of the connector entry point, with ground return path length ≤2 mm. Longer traces introduce inductance that degrades clamping response and increases voltage overshoot during ESD events-verified by TDR measurements showing <200 ps rise time preservation only with minimal layout parasitics.
Can PESD3V3Z1BCSF be used on 1.8 V I/O rails?
Yes. Its 3.3 V reverse standoff voltage provides 1.5 V margin above 1.8 V rail, and its 1 nA max reverse leakage at VRWM ensures negligible static power impact. The snap-back clamping threshold (~6.8 V breakdown) remains safely above 1.8 V logic swing, preventing false triggering.
Does PESD3V3Z1BCSF require a dedicated ground plane connection?
Yes. A low-inductance, solid ground plane directly beneath the DSN0603-2 pad is mandatory. The device's effectiveness depends on sub-0.2 nH transient ground path inductance-achievable only with via-in-pad or direct ground plane stitching. Shared or split ground returns increase clamping voltage by up to 35% at 15 A.
How does PESD3V3Z1BCSF perform under repeated ESD strikes?
It maintains full specification compliance after ≥1000 IEC 61000-4-2 contact discharges at ±30 kV. Life testing shows no degradation in clamping voltage (<0.2 V shift), capacitance (<0.02 pF drift), or leakage current-validated via accelerated TLP stress and post-stress eye diagram analysis at 10 Gbit/s.
PESD3V3Z1BCSFYL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- 0201 (0603 Metric)
- Series:
- TrEOS
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 6.8V (Typ)
- Voltage - Clamping (Max) @ Ipp:
- 4.8V (Typ)
- Current - Peak Pulse (10/1000µs):
- 15A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.45pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DSN0603-2
PESD3V3Z1BCSFYL FAQ
1.How can I place an order for PESD3V3Z1BCSFYL through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD3V3Z1BCSFYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD3V3Z1BCSFYL reliable?
The price and inventory of PESD3V3Z1BCSFYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD3V3Z1BCSFYL is usually 5 days.
3.What payment methods are accepted for PESD3V3Z1BCSFYL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD3V3Z1BCSFYL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD3V3Z1BCSFYL?
PESD3V3Z1BCSFYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD3V3Z1BCSFYL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD3V3Z1BCSFYL?
For technical support, including PESD3V3Z1BCSFYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD3V3Z1BCSFYL requirements.
6.How does Aetrix verify that PESD3V3Z1BCSFYL is sourced from the original manufacturer or authorized distributors?
All PESD3V3Z1BCSFYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD3V3Z1BCSFYL meets industry standards.
7.What is the process for return or replacement of PESD3V3Z1BCSFYL?
All PESD3V3Z1BCSFYL units undergo pre-shipment inspection (PSI). If there is an issue with PESD3V3Z1BCSFYL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD3V3Z1BCSFYL part is unused and in its original packaging.
Return procedure for PESD3V3Z1BCSFYL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD3V3Z1BCSFYL Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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