My Inquiry
My Account
Nexperia USA Inc. PESD3V3Z1BSFYL
- Part No.:
- PESD3V3Z1BSFYL
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
PESD3V3Z1BSFYL.pdf
- Description:
- TVS DIODE 3.3VWM 5.3VC DSN0603-2
- Quantity:
- Payment:
- Shipping:
Inventory:4,637
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PESD3V3Z1BSF from Nexperia is an extremely low-capacitance (0.28 pF typ), bidirectional ESD protection diode in a DSN0603-2 (SOD962-2) 0.6 mm × 0.3 mm ultra-small leadless package, rated for 3.3 V reverse standoff voltage and 20 kV IEC 61000-4-2 contact discharge, designed to protect high-speed data lines such as USB 3.2 and HDMI 2.0 interfaces.
For engineers reviewing the PESD3V3Z1BSF datasheet, PESD3V3Z1BSF pinout, PESD3V3Z1BSF application, or PESD3V3Z1BSF equivalent, this device is selected for ultra-low-signal-distortion transient suppression on single bidirectional lines where sub-0.35 pF capacitance, <5.3 V clamping at 9.5 A, and 17 GHz f-3dB are critical to maintaining signal integrity at 10 Gbit/s.
Technical Context
This device implements a snap-back clamping structure with negative dynamic resistance (0.19 Ω typ), enabling rapid transition into low-impedance conduction during ESD events while minimizing clamping voltage overshoot. Its bidirectional symmetry supports ±20 kV air/contact discharge without polarity constraints.
The DSN0603-2 package integrates both cathodes on separate terminals (Pin 1 = K1, Pin 2 = K2), forming a common-anode configuration that routes transients directly to ground with minimal inductance - essential for preserving eye diagram integrity in 10 Gbit/s USB 3.2 and HDMI 2.0 applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 3.3 V - Maximum continuous DC or RMS signal voltage the device blocks without leakage or conduction. |
| Diode Capacitance | 0.28 pF typ at 1 MHz, 0 V - Ensures negligible loading on 10 Gbit/s differential signals (e.g., USB 3.2 Gen 2, HDMI 2.0). |
| Clamping Voltage | 5.3 V max at 9.5 A (8/20 µs) - Limits voltage seen by protected IC I/O to safe levels during surge events. |
| ESD Rating | ±20 kV per IEC 61000-4-2 contact discharge - Meets highest industrial and consumer ESD immunity requirements. |
| Peak Pulse Current | 9.5 A (8/20 µs) - Sustains high-energy transients without failure, validated per IEC 61000-4-5. |
| f-3dB | 17 GHz - Confirmed via S-parameter analysis; preserves signal fidelity up to multi-GHz bandwidths. |
| Dynamic Resistance | 0.19 Ω typ - Enables fast, low-voltage clamping response during ESD snap-back conduction phase. |
Pinout & Package
Package: DSN0603-2 (SOD962-2), ultra-small leadless surface-mount package measuring 0.6 mm × 0.3 mm × 0.3 mm with 0.4 mm pitch; marking bar indicates cathode side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 (Cathode) | First cathode terminal; connects to protected signal line in common-anode bidirectional configuration. |
| 2 | K2 (Cathode) | Second cathode terminal; connects to same protected signal line, completing symmetrical ESD path to ground. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping architecture | Enables protection of AC-coupled or dual-polarity data lines (e.g., USB D+/D−, HDMI TMDS pairs) without polarity biasing. |
| 0.28 pF typical capacitance | Minimizes insertion loss and phase distortion on 10 Gbit/s links - verified via eye diagram comparison with/without device. |
| Snap-back dynamic behavior | Reduces clamping voltage under high-current ESD stress via negative resistance, improving downstream IC survivability. |
| Ultra-low-inductance ground path | DSN0603-2 layout and symmetric cathode routing suppress parasitic inductance, critical for sub-nanosecond ESD rise-time handling. |
| 17 GHz -3 dB bandwidth | Validated via S21 measurement; ensures transparency to high-frequency harmonics essential for clean 10 Gbit/s eye opening. |
Applications
| USB 3.2 Gen 2 Interface | HDMI 2.0 TMDS Channel |
|---|---|
|
Use Scenario: Protecting differential USB 3.2 Gen 2 (10 Gbit/s) data lanes on mobile device Type-C ports against user-handling ESD. IC Role / Device Role: Bidirectional ESD shunt placed immediately adjacent to connector, clamping transients before they reach USB controller PHY. Use Value: Maintains >80% eye height and 0.3 UI jitter margin at TP1/TP2 per USB-IF compliance testing - confirmed in datasheet Figs. 6–7. |
Use Scenario: Safeguarding HDMI 2.0 TMDS clock and data channels in set-top boxes against cable-discharge events. IC Role / Device Role: Line-level ESD clamp on each TMDS pair, mounted within 2 mm of HDMI receptacle per layout guidelines. Use Value: Preserves differential swing >800 mV and eliminates eye closure beyond 34 ps/div horizontal scale - validated in Figs. 8–11. |
| 5G Smartphone Antenna Switch Control | PCIe 4.0 Sideband Signal Line |
|
Use Scenario: Protecting GPIO-controlled antenna switch enable lines exposed to handheld ESD in compact 5G handset PCBs. IC Role / Device Role: Low-capacitance transient suppressor on 1.8 V control lines routed near RF front-end modules. Use Value: Adds <0.01 dB insertion loss at 3.5 GHz while surviving ±15 kV contact discharge - critical for maintaining TRP/TIS performance. |
Use Scenario: Shielding PCIe 4.0 sideband signals (CLKREQ#, PERST#) from board-level ESD coupling in server backplanes. IC Role / Device Role: Point-of-use ESD clamp on low-speed but noise-sensitive management lines sharing proximity with high-speed lanes. Use Value: Prevents false resets or clock request glitches by limiting clamped voltage to <4.5 V at 4 A - verified in TLP curves (Figs. 12–13). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor ESD9B3.3ST5G | 0.45 pF typ capacitance; 3.3 V VRWM; 12 kV IEC 61000-4-2 contact rating | Higher capacitance limits use to ≤5 Gbit/s interfaces; lower ESD rating reduces margin in harsh environments | Select when cost sensitivity outweighs 10 Gbit/s signal integrity requirements and ESD threat level is moderate. |
| Vishay VEML3328 | 0.25 pF typ; 3.3 V VRWM; ±15 kV IEC 61000-4-2; SOD-923 package (0.8 × 0.6 mm) | Larger footprint increases trace inductance; lower ESD rating requires additional system-level hardening | Prefer only if board space allows larger package and application does not require full 20 kV compliance. |
Compared with ESD9B3.3ST5G and VEML3328, PESD3V3Z1BSF delivers superior 10 Gbit/s signal fidelity due to its 0.28 pF capacitance and 17 GHz bandwidth, while offering the highest IEC 61000-4-2 rating (±20 kV) in the smallest footprint (0.6 × 0.3 mm), making it optimal for space-constrained, high-speed consumer electronics.
Availability
PESD3V3Z1BSF is available at Aetrix Electronics and suitable for USB 3.2 Gen 2 interface protection, HDMI 2.0 TMDS channel safeguarding, and 5G smartphone antenna switch control requiring stable component supply across high-volume production cycles.
Supply support for PESD3V3Z1BSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a leading semiconductor manufacturer specializing in high-performance, energy-efficient logic, analog, and ESD protection devices, headquartered in Nijmegen, Netherlands.
This device belongs to Nexperia's TrEOS family of ultra-low-capacitance ESD protection diodes, engineered specifically for preserving signal integrity in next-generation high-speed digital interfaces including USB, HDMI, MIPI, and PCIe.
FAQ
What is the maximum recommended trace length between PESD3V3Z1BSF and the protected connector?
Per Nexperia application guidance (Section 10), the device must be placed within 2 mm of the I/O connector to minimize inductance in the transient return path. Longer traces increase clamping voltage due to L·di/dt effects, degrading protection efficacy - especially critical for <1 ns ESD rise times.
Can PESD3V3Z1BSF be used to protect differential pairs without splitting the device across both lines?
No - PESD3V3Z1BSF protects only one bidirectional signal line. For differential pairs (e.g., USB D+/D−), two separate devices are required: one per line. It is not a dual-line or common-mode suppressor; its internal structure is a single common-anode dual-cathode diode.
Does the 0.28 pF capacitance value vary with applied reverse voltage?
Yes - capacitance decreases slightly with increasing reverse bias: 0.25 pF at 1.5 V VR (Table 6), versus 0.28 pF at 0 V. This voltage-dependent behavior is typical of junction capacitance and is factored into high-speed eye diagram validation at operating bias points.
Is PESD3V3Z1BSF qualified for automotive applications?
No - this device is not AEC-Q200 qualified or specified for automotive use. Nexperia explicitly states in Section 14 that non-automotive qualified products like PESD3V3Z1BSF lack testing to automotive environmental and reliability standards and must not be used in safety-critical vehicle systems.
PESD3V3Z1BSFYL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- 0201 (0603 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 6.9V (Typ)
- Voltage - Clamping (Max) @ Ipp:
- 5.3V
- Current - Peak Pulse (10/1000µs):
- 9.5A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 0.28pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DSN0603-2
PESD3V3Z1BSFYL FAQ
1.How can I place an order for PESD3V3Z1BSFYL through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD3V3Z1BSFYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD3V3Z1BSFYL reliable?
The price and inventory of PESD3V3Z1BSFYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD3V3Z1BSFYL is usually 5 days.
3.What payment methods are accepted for PESD3V3Z1BSFYL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD3V3Z1BSFYL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD3V3Z1BSFYL?
PESD3V3Z1BSFYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD3V3Z1BSFYL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD3V3Z1BSFYL?
For technical support, including PESD3V3Z1BSFYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD3V3Z1BSFYL requirements.
6.How does Aetrix verify that PESD3V3Z1BSFYL is sourced from the original manufacturer or authorized distributors?
All PESD3V3Z1BSFYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD3V3Z1BSFYL meets industry standards.
7.What is the process for return or replacement of PESD3V3Z1BSFYL?
All PESD3V3Z1BSFYL units undergo pre-shipment inspection (PSI). If there is an issue with PESD3V3Z1BSFYL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD3V3Z1BSFYL part is unused and in its original packaging.
Return procedure for PESD3V3Z1BSFYL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD3V3Z1BSFYL Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
