Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PESD4V0Z1BCSFYL

Part No.:
PESD4V0Z1BCSFYL
Manufacturer:
Nexperia USA Inc.
Category:
TVS Diodes
Package:
0201 (0603 Metric)
Datasheet:
AetrixPESD4V0Z1BCSFYL.pdf
Description:
TVS DIODE 4VWM 4.8VC DSN0603-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:756

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PESD4V0Z1BCSF from Nexperia is an extremely low-capacitance bidirectional ESD protection diode in a DSN0603-2 (SOD962-2) ultra-small SMD package, designed to protect single high-speed signal lines against ±30 kV IEC 61000-4-2 ESD events and 15 A IEC 61000-4-5 surges. It delivers 0.45 pF typical capacitance, 4.8 V clamping voltage at 15 A, and supports data rates up to 10 Gbit/s in USB 3.1 and HDMI 2.0 interfaces.

For engineers reviewing the PESD4V0Z1BCSF datasheet, PESD4V0Z1BCSF pinout, PESD4V0Z1BCSF application, or PESD4V0Z1BCSF equivalent, key selection criteria include sub-0.5 pF capacitance for minimal signal integrity impact, bidirectional ±4 V standoff, snap-back clamping behavior, and compatibility with high-speed differential pairs requiring <0.3 mm body height and 0.4 mm pitch.

Technical Context

This dual-cathode ESD diode implements a symmetrical snap-back clamping structure with negative dynamic resistance, enabling rapid transition into low-impedance conduction during ESD transients while maintaining ultra-low leakage (<50 nA at 4 V) in standby. Its layout uses two integrated cathodes (K1/K2) sharing a common anode node internally, forming a bidirectional path without external biasing.

The device operates within −40 °C to +125 °C ambient range and achieves 14.3 GHz −3 dB cut-off frequency, verified via TDR and eye diagram testing on 5–10 Gbit/s channels. Clamping performance is characterized using TLP (1 ns rise, 100 ns pulse) and IEC 61000-4-5 (8/20 µs) waveforms, with dynamic resistance stabilized at 0.11 Ω under ±10 A TLP stress.

Key Specifications

Parameter Value and Actual Design Meaning
Capacitance 0.45 pF at 1 MHz, 0 V - preserves signal integrity on >5 Gbit/s differential links (e.g., USB 3.1 Gen 2)
Clamping Voltage 4.8 V at 15 A (IEC 61000-4-5) - limits transient overvoltage to safe levels for 3.3 V I/O receivers
ESD Rating ±30 kV contact discharge (IEC 61000-4-2) - exceeds industrial immunity requirements for handheld ports
Standoff Voltage 4 V reverse - compatible with 3.3 V logic rails while blocking normal operating voltages
Breakdown Voltage 6.8 V at 1 mA - ensures robust margin above standoff and enables snap-back triggering
Dynamic Resistance 0.11 Ω (TLP, ±10 A) - minimizes voltage overshoot during fast ESD current injection
Package Dimensions 0.6 mm × 0.3 mm × 0.3 mm - fits tight spacing near USB/HDMI connectors without trace detours

Pinout & Package

DSN0603-2 (SOD962-2) is a leadless, ultra-small surface-mount package with 0.4 mm pitch and coplanar terminals. The top marking "C4" identifies the cathode side; the bar denotes cathode orientation. Body height of 0.3 mm enables low-profile placement adjacent to high-speed connectors.

Pin/Terminal Circuit Role Design Meaning
1 (K1) Cathode of first diode segment Connects to protected line; forms one half of bidirectional clamp path to ground
2 (K2) Cathode of second diode segment Connects to same protected line; completes symmetrical ESD path for positive/negative transients

Key Features

Feature Design Value
Bidirectional clamping architecture Enables protection of AC-coupled or floating signal lines (e.g., USB D+/D−, HDMI TMDS) without polarity constraints
Snap-back trigger mechanism Reduces clamping voltage by >30% vs. standard TVS during ESD events, minimizing stress on downstream ICs
0.45 pF capacitance Ensures <0.5 dB insertion loss at 5 GHz, preserving eye opening in 10 Gbit/s serial links
0.11 Ω dynamic resistance Delivers stable clamping under fast-rising ESD pulses (1 ns rise time), limiting peak overshoot to <500 mV
Ultra-small 0.6 × 0.3 mm footprint Allows placement within 2 mm of connector pads-critical for meeting IEC 61000-4-2 layout guidelines

Applications

USB 3.1 Gen 2 Interface HDMI 2.0 TMDS Channel

Use Scenario: Protecting differential D+ and D− lines in portable SSD enclosures exposed to frequent hot-plug ESD events.

IC Role / Device Role / Timing Role: Bidirectional transient suppressor placed immediately before the USB controller PHY input pins.

Use Value: Maintains 5 Gbit/s eye diagram integrity (Fig. 6/7) while clamping ±30 kV discharges to <5 V peak.

Use Scenario: Shielding TMDS clock and data lanes on 4K video docking stations subject to user-handling ESD.

IC Role / Device Role / Timing Role: Line-level ESD shunt mounted at HDMI Type-A receptacle, referenced to chassis ground.

Use Value: Enables clean 10 Gbit/s eye diagrams (Fig. 8/9) with <0.45 pF loading-no equalization penalty required.

Mobile Phone Antenna Switch Path PCIe Gen 3 Reference Clock

Use Scenario: Guarding RF antenna switch control lines in LTE/5G handsets where ESD can disrupt bias sequencing.

IC Role / Device Role / Timing Role: Low-capacitance shunt across GPIO-controlled switch enable lines, grounded via shortest possible trace.

Use Value: Prevents latch-up in GaAs switches by limiting transient voltage to <4.8 V without adding jitter or delay.

Use Scenario: Protecting 100 MHz PCIe reference clock traces on server motherboard edge connectors.

IC Role / Device Role / Timing Role: Point-of-entry ESD clamp on differential CLK+/CLK− pair, placed before clock buffer input.

Use Value: Adds <0.05 ps RMS jitter (measured) while surviving ±30 kV contact discharge-no clock failure observed.

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor ESD9X5.0ST5G 0.65 pF capacitance, 5.0 V standoff, SOD-923 package (0.8 × 0.6 mm) Larger footprint; higher capacitance reduces usable bandwidth to ~3.5 GHz Select when board space allows larger package and 5.0 V rail compatibility is required
Vishay VEML3010 0.35 pF capacitance but unidirectional; requires dual-device configuration for bidirectional protection Doubles BOM count and PCB area; adds routing complexity on dense layouts Choose only if absolute minimum capacitance is prioritized over simplicity and cost

Compared with ESD9X5.0ST5G and VEML3010, PESD4V0Z1BCSF uniquely balances 0.45 pF capacitance, true bidirectionality, and 0.6 × 0.3 mm size-making it optimal for space-constrained, multi-gigabit interfaces where single-device simplicity and signal fidelity are critical.

Availability

PESD4V0Z1BCSF is available at Aetrix Electronics and suitable for USB 3.1, HDMI 2.0, and mobile RF front-end designs requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for PESD4V0Z1BCSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including ESD protection, logic, discrete, and MOSFET solutions for automotive, industrial, and consumer markets.

This device belongs to Nexperia's TrEOS family of ultra-low-capacitance ESD protectors, engineered specifically for preserving signal integrity in next-generation high-speed digital interfaces without compromising surge robustness.

FAQ

What is the maximum recommended trace length between PESD4V0Z1BCSF and the protected connector?

Per Nexperia's layout guidelines, the trace from the device cathodes to the protected line must be ≤2 mm, and the ground return path to the system ground plane must be ≤3 mm. Longer paths increase inductance, degrading clamping response and risking overshoot beyond 4.8 V during 1 ns ESD rise times-verified in TLP testing (Fig. 14–17).

Can PESD4V0Z1BCSF be used on 5 V logic lines?

No-it has a 4 V reverse standoff voltage and 6.8 V breakdown, making it unsuitable for continuous 5 V operation. Applying ≥4.1 V DC risks forward conduction or snap-back activation. It is rated only for 3.3 V systems or AC-coupled signals with peak excursions below 4 V, such as USB 3.1 or HDMI TMDS.

Does this device require a dedicated ground plane connection?

Yes. The device must connect to a low-inductance ground plane via at least one thermal via within 0.5 mm of each cathode pad. Split or high-impedance grounds cause elevated clamping voltage-measurements show >7 V overshoot on non-ideal returns (Fig. 21 layout notes). Ground plane continuity directly impacts the 0.11 Ω dynamic resistance performance.

How does its 0.45 pF capacitance affect 10 Gbit/s HDMI 2.0 eye diagrams?

At 10 Gbit/s, the 0.45 pF load introduces <0.1 dB insertion loss at 5 GHz (Fig. 3), preserving >85% eye height and >75% eye width in measured HDMI TP1/TP2 tests (Fig. 8–13). This outperforms alternatives with >0.6 pF, which degrade eye opening by ≥20% due to high-frequency roll-off and group delay distortion.

PESD4V0Z1BCSFYL Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Package/Case:
0201 (0603 Metric)
Series:
TrEOS
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
4V (Max)
Voltage - Breakdown (Min):
6.8V (Typ)
Voltage - Clamping (Max) @ Ipp:
4.8V (Typ)
Current - Peak Pulse (10/1000µs):
15A (8/20µs)
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
0.45pF @ 1MHz
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DSN0603-2

PESD4V0Z1BCSFYL FAQ

1.How can I place an order for PESD4V0Z1BCSFYL through Aetrix?

Please submit a Request for Quotation (RFQ) for PESD4V0Z1BCSFYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PESD4V0Z1BCSFYL reliable?

The price and inventory of PESD4V0Z1BCSFYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD4V0Z1BCSFYL is usually 5 days.

3.What payment methods are accepted for PESD4V0Z1BCSFYL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD4V0Z1BCSFYL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PESD4V0Z1BCSFYL?

PESD4V0Z1BCSFYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PESD4V0Z1BCSFYL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PESD4V0Z1BCSFYL?

For technical support, including PESD4V0Z1BCSFYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD4V0Z1BCSFYL requirements.

6.How does Aetrix verify that PESD4V0Z1BCSFYL is sourced from the original manufacturer or authorized distributors?

All PESD4V0Z1BCSFYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD4V0Z1BCSFYL meets industry standards.

7.What is the process for return or replacement of PESD4V0Z1BCSFYL?

All PESD4V0Z1BCSFYL units undergo pre-shipment inspection (PSI). If there is an issue with PESD4V0Z1BCSFYL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PESD4V0Z1BCSFYL part is unused and in its original packaging.

Return procedure for PESD4V0Z1BCSFYL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PESD4V0Z1BCSFYL Tags

  • PESD4V0Z1BCSFYL
  • PESD4V0Z1BCSFYL PDF
  • PESD4V0Z1BCSFYL Datasheet
  • PESD4V0Z1BCSFYL Specifications
  • PESD4V0Z1BCSFYL Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PESD4V0Z1BCSFYL
  • Buy PESD4V0Z1BCSFYL
  • PESD4V0Z1BCSFYL Price
  • PESD4V0Z1BCSFYL Distributor
  • PESD4V0Z1BCSFYL Supplier
  • PESD4V0Z1BCSFYL Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER