NXP Semiconductors PESD5V0F5UF,115
- Part No.:
- PESD5V0F5UF,115
- Manufacturer:
- NXP Semiconductors
- Category:
- TVS Diodes
- Package:
- 6-XFDFN
- Datasheet:
-
PESD5V0F5UF,115.pdf
- Description:
- TVS DIODE 5VWM 15VC 6XSON
- Quantity:
- Payment:

- Shipping:

Inventory:213,222
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Product details
Overview
PESD5V0F5UF,115 from NXP Semiconductors is a unidirectional five-channel ESD protection diode array in a DFN1410-6 (SOT886) package, featuring 0.55 pF typical diode capacitance, 5 V reverse standoff voltage, and 8 kV IEC 61000-4-2 contact ESD rating. It protects high-speed signal lines-including USB, HDMI, and antenna interfaces-against electrostatic discharge and surge transients while minimizing signal integrity impact.
For engineers reviewing the PESD5V0F5UF,115 datasheet, PESD5V0F5UF,115 pinout, PESD5V0F5UF,115 application, or PESD5V0F5UF,115 equivalent, this device is selected for ultra-low-capacitance ESD protection in space-constrained, high-frequency PCB layouts where leakage current <1 nA and clamping voltage ≤15 V at 2 A surge are critical design requirements.
Technical Context
The PESD5V0F5UF,115 implements a common-anode unidirectional topology with five independent cathodes (pins 1, 3–6) tied to a shared anode (pin 2), enabling simultaneous protection of five signal lines referenced to a single ground-return path. Its femtofarad-level capacitance is achieved via optimized junction geometry and low-parasitic packaging.
It complies with IEC 61000-4-2 Level 4 (±8 kV contact), IEC 61000-4-5 (2 A, 8/20 µs surge), and AEC-Q101 for automotive-grade reliability. Clamping occurs at ≤13 V (1 A) and ≤15 V (2 A), with dynamic resistance of 1.1 Ω, ensuring fast transient suppression without signal distortion on data lines up to 1 Gbit/s.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage (VRWM) | 5 V - Maximum continuous operating voltage before conduction; sets upper limit for protected line DC bias. |
| Diode Capacitance (Cd) | 0.55 pF (typ) at 1 MHz, 0 V - Enables minimal signal loading on high-speed interfaces like USB 2.0 and HDMI. |
| ESD Rating (IEC 61000-4-2) | ±8 kV contact - Validated protection level for user-accessible ports per industrial and automotive ESD immunity standards. |
| Peak Pulse Current (IPPM) | 2 A (8/20 µs) - Sustains surge energy from lightning-induced transients or cable discharge events. |
| Clamping Voltage (VCL) | ≤15 V at IPPM = 2 A - Limits voltage seen by downstream ICs during worst-case surge, preserving logic-level integrity. |
| Reverse Leakage (IRM) | <1 nA at 5 V - Prevents DC bias shift or power drain in battery-powered sensor and RF front-end circuits. |
| Breakdown Voltage (VBR) | 7.5–10 V at 10 mA - Defines sharp turn-on threshold ensuring reliable triggering above normal operating voltage. |
Pinout & Package
Package: DFN1410-6 (SOT886), ultra-thin surface-mount plastic package measuring 1.0 × 1.45 × 0.5 mm, leadless, with exposed thermal pad not connected internally.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | ESD protection path for Signal Line 1; connects to protected trace, then to system ground via shortest possible route. |
| 2 | Common Anode | Shared return node for all five channels; must be routed directly to low-impedance ground plane with minimal inductance. |
| 3 | Cathode | ESD protection path for Signal Line 2; electrically isolated from other cathodes except through common anode. |
| 4 | Cathode | ESD protection path for Signal Line 3; supports independent routing for differential or single-ended signals. |
| 5 | Cathode | ESD protection path for Signal Line 4; enables compact layout for multi-lane interfaces like MIPI or SDIO. |
| 6 | Cathode | ESD protection path for Signal Line 5; completes five-channel protection without external components. |
Key Features
| Feature | Design Value |
|---|---|
| Five-channel unidirectional ESD protection | Single-package solution for protecting five independent signal lines-reduces board area vs. discrete diodes and avoids channel crosstalk. |
| 0.55 pF typical capacitance | Preserves signal rise/fall times and impedance matching on >500 MHz traces, critical for USB 2.0, HDMI, and cellular antenna feeds. |
| AEC-Q101 qualification | Validated for automotive under-hood and infotainment applications with guaranteed operation from −55 °C to +150 °C ambient. |
| Ultra-low leakage <1 nA | Eliminates measurable current draw in always-on RF receiver paths and low-power IoT sensor nodes. |
| 150 °C maximum junction temperature | Supports placement near heat-generating components (e.g., PMICs, processors) without derating or thermal shutdown. |
Applications
| USB 2.0 Interface Protection | HDMI Signal Line Protection |
|---|---|
|
Use Scenario: Protecting D+ and D− pins of USB 2.0 connectors on portable devices and docking stations against user-handling ESD. IC Role / Device Role / Timing Role: Unidirectional clamping diode array placed immediately adjacent to the USB connector, with cathodes tied to D+/D− and common anode grounded. Use Value: 0.55 pF capacitance prevents signal degradation at 480 Mbps, while ±8 kV ESD rating meets IEC 61000-4-2 compliance without sacrificing data integrity. |
Use Scenario: Shielding TMDS clock and data channels in HDMI 1.4 receivers against ESD events during cable insertion or hot-plug. IC Role / Device Role / Timing Role: Five-channel ESD suppressor covering three TMDS data pairs plus clock and CEC lines in a single footprint. Use Value: Sub-1 pF capacitance ensures <1% signal attenuation at 225 MHz, maintaining HDMI eye diagram compliance and HDCP handshake reliability. |
| Cellular Antenna Feed Protection | SIM Card Interface Protection |
|
Use Scenario: Safeguarding RF antenna feedlines in LTE/GNSS modules from ESD damage during manufacturing handling or field use. IC Role / Device Role / Timing Role: Low-capacitance shunt protector between antenna trace and ground, placed before the RF switch/LNA input. Use Value: 0.55 pF capacitance introduces negligible impedance mismatch at 1.5–2.7 GHz, preserving VSWR and receiver sensitivity. |
Use Scenario: Securing SIM card interface lines (I/O, CLK, RST, VCC) in smartphones and M2M modules against contact ESD. IC Role / Device Role / Timing Role: Five-cathode array assigned to each SIM signal line, with common anode connected to system ground plane. Use Value: 5 V VRWM aligns with standard SIM supply rails; <1 nA leakage prevents false resets or communication errors during low-power sleep modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESD5V3U2U-2/TR | Unidirectional dual-channel; 0.5 pF capacitance; 5.3 V VRWM; same SOT886 package. | Limited to two lines; requires two devices for five-line coverage; lower VRWM reduces margin for 5 V tolerant interfaces. | Select when only two high-speed lines need protection and board space permits dual placement. |
| TPD4E05U06DQAR | Unidirectional quad-channel; 0.5 pF; 5.5 V VRWM; 6-pin X2SON package (1.0 × 1.0 mm). | Covers four lines only; lacks fifth channel; slightly smaller footprint but no direct pin mapping to PESD5V0F5UF,115. | Choose for space-constrained designs needing four-line protection with tighter layout tolerance than SOT886 allows. |
Compared with ESD5V3U2U-2/TR and TPD4E05U06DQAR, the PESD5V0F5UF,115 uniquely delivers five-channel protection in a standardized SOT886 footprint with verified 8 kV ESD rating and sub-1 pF capacitance-enabling single-component coverage of full-interface protection without compromising signal fidelity or requiring layout redesign.
Availability
PESD5V0F5UF,115 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI signal line safeguarding, and cellular antenna feed shielding requiring stable component supply across automotive, industrial, and consumer electronics production programs.
Supply support for PESD5V0F5UF,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PESD5V0F5UF,115 belongs to NXP's femtofarad ESD protection portfolio, engineered specifically for high-speed data line and RF antenna protection where ultra-low capacitance and AEC-Q101 reliability are mandatory.
FAQ
What is the maximum operating temperature for the PESD5V0F5UF,115?
The PESD5V0F5UF,115 supports an ambient operating temperature range of −55 °C to +150 °C and a maximum junction temperature of 150 °C. This wide thermal envelope enables deployment in under-hood automotive modules, industrial gateways, and thermally dense portable electronics without derating, provided PCB thermal vias and copper pour are used per NXP's recommended layout guidelines.
Does the PESD5V0F5UF,115 support bidirectional signal lines?
No-the PESD5V0F5UF,115 is a unidirectional ESD protection array with a common anode architecture. It is designed exclusively for protecting signals referenced to ground, such as USB D+, HDMI TMDS+, or SIM I/O. For bidirectional lines like RS-485 or CAN, a dedicated bidirectional array (e.g., PESD5V0X1BC) must be used instead of the PESD5V0F5UF,115.
How is the PESD5V0F5UF,115 marked on the package?
The PESD5V0F5UF,115 carries the marking code "UT" on its top surface, laser-etched in the DFN1410-6 (SOT886) package. This two-character identifier is consistent across all units and matches the ordering information specified in Table 4 of the NXP datasheet for PESD5V0F5UF,115.
What is the clamping voltage of the PESD5V0F5UF,115 at 1 A surge current?
The clamping voltage (VCL) of the PESD5V0F5UF,115 is ≤13 V when subjected to a 1 A (8/20 µs) surge pulse. This value is measured from any cathode pin (1, 3–6) to the common anode (pin 2) and ensures downstream ICs remain within safe voltage limits during transient events, as confirmed in Table 8 of the official NXP datasheet for PESD5V0F5UF,115.
Is the PESD5V0F5UF,115 compatible with lead-free reflow soldering processes?
Yes-the PESD5V0F5UF,115 is qualified for standard lead-free reflow soldering per JEDEC J-STD-020, with a peak temperature of 260 °C. Its DFN1410-6 (SOT886) package uses matte tin terminations and is fully compatible with IPC-A-610 Class 2 and Class 3 assembly requirements, as documented in Section 11 of the NXP PESD5V0F5UF,115 datasheet.
PESD5V0F5UF,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Package/Case:
- 6-XFDFN
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 7.5V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- -
- Power Line Protection:
- No
- Applications:
- Ethernet, Telecom
- Capacitance @ Frequency:
- 0.55pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-XSON (1.45x1)
PESD5V0F5UF,115 FAQ
1.How can I place an order for PESD5V0F5UF,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PESD5V0F5UF,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PESD5V0F5UF,115 reliable?
The price and inventory of PESD5V0F5UF,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PESD5V0F5UF,115 is usually 5 days.
3.What payment methods are accepted for PESD5V0F5UF,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PESD5V0F5UF,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PESD5V0F5UF,115?
PESD5V0F5UF,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PESD5V0F5UF,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PESD5V0F5UF,115?
For technical support, including PESD5V0F5UF,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PESD5V0F5UF,115 requirements.
6.How does Aetrix verify that PESD5V0F5UF,115 is sourced from the original manufacturer or authorized distributors?
All PESD5V0F5UF,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PESD5V0F5UF,115 meets industry standards.
7.What is the process for return or replacement of PESD5V0F5UF,115?
All PESD5V0F5UF,115 units undergo pre-shipment inspection (PSI). If there is an issue with PESD5V0F5UF,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PESD5V0F5UF,115 part is unused and in its original packaging.
Return procedure for PESD5V0F5UF,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PESD5V0F5UF,115 Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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